IN2014CN01603A - - Google Patents

Info

Publication number
IN2014CN01603A
IN2014CN01603A IN1603CHN2014A IN2014CN01603A IN 2014CN01603 A IN2014CN01603 A IN 2014CN01603A IN 1603CHN2014 A IN1603CHN2014 A IN 1603CHN2014A IN 2014CN01603 A IN2014CN01603 A IN 2014CN01603A
Authority
IN
India
Prior art keywords
mechanical polishing
chemical mechanical
xxa
cmp
composite
Prior art date
Application number
Other languages
English (en)
Inventor
Bastian Marten Noller
Bettina Drescher
Christophe Gillot
Original Assignee
Basf Se
Ning Gao
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Basf Se, Ning Gao filed Critical Basf Se
Publication of IN2014CN01603A publication Critical patent/IN2014CN01603A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02024—Mirror polishing

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
IN1603CHN2014 2011-08-01 2012-07-30 IN2014CN01603A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201161513691P 2011-08-01 2011-08-01
PCT/IB2012/053878 WO2013018016A2 (en) 2011-08-01 2012-07-30 A PROCESS FOR THE MANUFACTURE OF SEMICONDUCTOR DEVICES COMPRISING THE CHEMICAL MECHANICAL POLISHING OF ELEMENTAL GERMANIUM AND/OR Si1-XGeX MATERIAL IN THE PRESENCE OF A CMP COMPOSITION HAVING A pH VALUE OF 3.0 TO 5.5

Publications (1)

Publication Number Publication Date
IN2014CN01603A true IN2014CN01603A (zh) 2015-05-08

Family

ID=47629745

Family Applications (1)

Application Number Title Priority Date Filing Date
IN1603CHN2014 IN2014CN01603A (zh) 2011-08-01 2012-07-30

Country Status (9)

Country Link
US (1) US20140199841A1 (zh)
EP (1) EP2741892A4 (zh)
JP (1) JP2014527298A (zh)
KR (1) KR20140071353A (zh)
CN (1) CN103717351A (zh)
IN (1) IN2014CN01603A (zh)
RU (1) RU2014107762A (zh)
TW (1) TW201311842A (zh)
WO (1) WO2013018016A2 (zh)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9238755B2 (en) 2011-11-25 2016-01-19 Fujima Incorporated Polishing composition
JP6132315B2 (ja) * 2012-04-18 2017-05-24 株式会社フジミインコーポレーテッド 研磨用組成物
EP2810997A1 (en) 2013-06-05 2014-12-10 Basf Se A chemical mechanical polishing (cmp) composition
WO2016097915A1 (en) 2014-12-16 2016-06-23 Basf Se Chemical mechanical polishing (cmp) composition for high effective polishing of substrates comprising germanium
US10570313B2 (en) * 2015-02-12 2020-02-25 Versum Materials Us, Llc Dishing reducing in tungsten chemical mechanical polishing
US9916985B2 (en) 2015-10-14 2018-03-13 International Business Machines Corporation Indium phosphide smoothing and chemical mechanical planarization processes
US9646842B1 (en) 2015-10-14 2017-05-09 International Business Machines Corporation Germanium smoothing and chemical mechanical planarization processes
US9646841B1 (en) 2015-10-14 2017-05-09 International Business Machines Corporation Group III arsenide material smoothing and chemical mechanical planarization processes
JP6918600B2 (ja) * 2016-07-29 2021-08-11 芝浦メカトロニクス株式会社 処理液生成装置及びそれを用いた基板処理装置
CN107665839B (zh) 2016-07-29 2021-08-10 芝浦机械电子装置股份有限公司 处理液生成装置和使用该处理液生成装置的基板处理装置
TWI821407B (zh) 2018-09-28 2023-11-11 日商福吉米股份有限公司 研磨用組合物、研磨方法及基板之製造方法
US20220348791A1 (en) 2021-04-30 2022-11-03 Fujimi Incorporated Polishing composition, polishing method, and method for producing polished substrate

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3429080A (en) * 1966-05-02 1969-02-25 Tizon Chem Corp Composition for polishing crystalline silicon and germanium and process
JP3027551B2 (ja) * 1997-07-03 2000-04-04 キヤノン株式会社 基板保持装置ならびに該基板保持装置を用いた研磨方法および研磨装置
FR2773177B1 (fr) * 1997-12-29 2000-03-17 France Telecom Procede d'obtention d'une couche de germanium ou silicium monocristallin sur un substrat de silicium ou germanium monocristallin, respectivement, et produits multicouches obtenus
JP4090589B2 (ja) * 1998-09-01 2008-05-28 株式会社フジミインコーポレーテッド 研磨用組成物
US6270395B1 (en) * 1998-09-24 2001-08-07 Alliedsignal, Inc. Oxidizing polishing slurries for low dielectric constant materials
US6890835B1 (en) * 2000-10-19 2005-05-10 International Business Machines Corporation Layer transfer of low defect SiGe using an etch-back process
EP1566420A1 (en) * 2004-01-23 2005-08-24 JSR Corporation Chemical mechanical polishing aqueous dispersion and chemical mechanical polishing method
US6893936B1 (en) * 2004-06-29 2005-05-17 International Business Machines Corporation Method of Forming strained SI/SIGE on insulator with silicon germanium buffer
CN1300271C (zh) * 2004-09-24 2007-02-14 中国科学院上海微系统与信息技术研究所 硫系化合物相变材料化学机械抛光的纳米抛光液及其应用
CN100335581C (zh) * 2004-11-24 2007-09-05 中国科学院上海微系统与信息技术研究所 硫系相变材料化学机械抛光的无磨料抛光液及其应用
TWI402335B (zh) * 2006-09-08 2013-07-21 Kao Corp 研磨液組合物
US7678605B2 (en) * 2007-08-30 2010-03-16 Dupont Air Products Nanomaterials Llc Method for chemical mechanical planarization of chalcogenide materials
FR2932108B1 (fr) * 2008-06-10 2019-07-05 Soitec Polissage de couches de germanium
CN101372606B (zh) * 2008-10-14 2013-04-17 中国科学院上海微系统与信息技术研究所 用氧化铈化学机械抛光液抛光硫系化合物相变材料的方法
US8110483B2 (en) * 2009-10-22 2012-02-07 International Business Machines Corporation Forming an extremely thin semiconductor-on-insulator (ETSOI) layer

Also Published As

Publication number Publication date
RU2014107762A (ru) 2015-09-10
EP2741892A4 (en) 2015-03-18
WO2013018016A2 (en) 2013-02-07
JP2014527298A (ja) 2014-10-09
US20140199841A1 (en) 2014-07-17
KR20140071353A (ko) 2014-06-11
TW201311842A (zh) 2013-03-16
WO2013018016A3 (en) 2013-03-28
CN103717351A (zh) 2014-04-09
EP2741892A2 (en) 2014-06-18

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