IN2013CH01327A - - Google Patents
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- Publication number
- IN2013CH01327A IN2013CH01327A IN1327CH2013A IN2013CH01327A IN 2013CH01327 A IN2013CH01327 A IN 2013CH01327A IN 1327CH2013 A IN1327CH2013 A IN 1327CH2013A IN 2013CH01327 A IN2013CH01327 A IN 2013CH01327A
- Authority
- IN
- India
- Prior art keywords
- transistor
- employed
- intended
- control device
- control
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/22—Conversion of dc power input into dc power output with intermediate conversion into ac
- H02M3/24—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters
- H02M3/28—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
- H02M3/325—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal
- H02M3/335—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/10—Modifications for increasing the maximum permissible switched voltage
- H03K17/102—Modifications for increasing the maximum permissible switched voltage in field-effect transistor switches
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/22—Conversion of dc power input into dc power output with intermediate conversion into ac
- H02M3/24—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters
- H02M3/28—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
- H02M3/325—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal
- H02M3/335—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/33538—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only of the forward type
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M5/00—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases
- H02M5/40—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases with intermediate conversion into dc
- H02M5/42—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases with intermediate conversion into dc by static converters
- H02M5/44—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases with intermediate conversion into dc by static converters using discharge tubes or semiconductor devices to convert the intermediate dc into ac
- H02M5/453—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases with intermediate conversion into dc by static converters using discharge tubes or semiconductor devices to convert the intermediate dc into ac using devices of a triode or transistor type requiring continuous application of a control signal
- H02M5/458—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases with intermediate conversion into dc by static converters using discharge tubes or semiconductor devices to convert the intermediate dc into ac using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/74—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of diodes
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Dc-Dc Converters (AREA)
- Power Conversion In General (AREA)
- Electronic Switches (AREA)
- Inverter Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1252956A FR2988931B1 (fr) | 2012-03-30 | 2012-03-30 | Dispositif de commande employe dans un systeme d'alimentation electrique a decoupage |
Publications (1)
Publication Number | Publication Date |
---|---|
IN2013CH01327A true IN2013CH01327A (pt) | 2015-08-14 |
Family
ID=47754384
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IN1327CH2013 IN2013CH01327A (pt) | 2012-03-30 | 2013-03-26 |
Country Status (8)
Country | Link |
---|---|
US (1) | US9543841B2 (pt) |
EP (1) | EP2645569B1 (pt) |
JP (1) | JP6275391B2 (pt) |
CN (1) | CN103368403B (pt) |
BR (1) | BR102013007359B1 (pt) |
ES (1) | ES2717700T3 (pt) |
FR (1) | FR2988931B1 (pt) |
IN (1) | IN2013CH01327A (pt) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102497088B (zh) * | 2011-12-15 | 2014-06-25 | 矽力杰半导体技术(杭州)有限公司 | 一种mos管的自适应串联电路 |
FR3002703B1 (fr) | 2013-02-25 | 2017-07-21 | Schneider Toshiba Inverter Europe Sas | Dispositif de commande employe dans un systeme d'alimentation electrique a decoupage |
JP6639103B2 (ja) * | 2015-04-15 | 2020-02-05 | 株式会社東芝 | スイッチングユニット及び電源回路 |
CN108631623B (zh) * | 2017-03-26 | 2021-05-18 | 南京博兰得电子科技有限公司 | 一种组合开关 |
FR3078593B1 (fr) * | 2018-03-05 | 2020-02-14 | Schneider Electric Industries Sas | Circuit de protection contre les surtensions et appareil electrique comportant au moins un tel circuit de protection |
JP7149757B2 (ja) * | 2018-08-02 | 2022-10-07 | 株式会社日立産機システム | スイッチング電源回路およびそれを備えた電力変換装置 |
CN109474269B (zh) * | 2018-10-31 | 2023-01-13 | 矽力杰半导体技术(杭州)有限公司 | 浮动开关及其驱动电路 |
FR3097682B1 (fr) * | 2019-06-19 | 2023-01-13 | St Microelectronics Gmbh | Composant monolithique comportant un transistor de puissance au nitrure de gallium |
CN110868092B (zh) * | 2019-11-28 | 2020-08-25 | 湖北嘉辰达新能源科技有限公司 | 三电平式移相全桥大功率电源 |
US11063589B1 (en) * | 2020-04-27 | 2021-07-13 | GaN Force Corporation | Power circuit facilitating the operation of a high electron mobility transistor |
Family Cites Families (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5730666Y2 (pt) * | 1977-09-09 | 1982-07-06 | ||
WO1981001924A1 (en) * | 1979-12-28 | 1981-07-09 | Int Rectifier Corp Jp Ltd | Field effect transistor circuit configuration |
US4394580A (en) * | 1981-07-27 | 1983-07-19 | L.C.E. Ltd. | Method and apparatus for analyzing gems |
US4692643A (en) * | 1983-10-28 | 1987-09-08 | Hitachi, Ltd. | Semiconductor switching device having plural MOSFET's, GTO's or the like connected in series |
DE3409423A1 (de) * | 1984-03-15 | 1985-09-26 | Philips Patentverwaltung Gmbh, 2000 Hamburg | Schaltungsanordnung zum schalten des stromes in einer induktiven last |
US4906904A (en) * | 1989-06-27 | 1990-03-06 | Digital Equipment Corporation | Cathode ray tube deflection circuit with solid state switch |
FR2659810B1 (fr) * | 1990-03-16 | 1992-06-05 | Merlin Gerin | Interrupteur statique moyenne tension. |
US5227781A (en) * | 1991-03-01 | 1993-07-13 | Litton Systems, Inc. | Mosfet switch matrix |
JPH07264847A (ja) * | 1994-03-18 | 1995-10-13 | Fujitsu Ltd | Dc−dcコンバータ装置 |
US5602724A (en) * | 1996-04-23 | 1997-02-11 | Power Integrations, Inc. | Low-cost, high-voltage, flyback power supply |
US6005415A (en) * | 1997-07-18 | 1999-12-21 | International Business Machines Corporation | Switching circuit for large voltages |
JP2000156974A (ja) * | 1998-11-19 | 2000-06-06 | Hitachi Ltd | 同期整流コンバータ |
JP2002033648A (ja) * | 2000-07-14 | 2002-01-31 | Origin Electric Co Ltd | 縦続接続回路 |
CN1119850C (zh) * | 2000-11-06 | 2003-08-27 | 成都希望电子研究所 | 一种提高风力发电能量利用率的送变电装置 |
AU2002353265A1 (en) * | 2001-11-27 | 2003-06-10 | Koninklijke Philips Electronics N.V. | Output driver comprising an improved control circuit |
US20030217211A1 (en) * | 2002-05-14 | 2003-11-20 | Rust Robert A. | Controller communications over an always-on controller interconnect |
KR100454029B1 (ko) * | 2002-06-12 | 2004-10-20 | 삼성에스디아이 주식회사 | 플라즈마 디스플레이 패널용 스위치모드 파워 서플라이의에너지 제어 회로 및 그 제어 방법 |
US6975146B1 (en) * | 2004-01-02 | 2005-12-13 | Sauer-Danfoss Inc. | High side NFET gate driving circuit |
FR2875970B1 (fr) * | 2004-09-27 | 2008-01-18 | Schneider Electric Ind Sas | Dispositif et procede de commande d'un convertisseur d'energie electrique et convertisseur comportant un tel dispositif |
JP2006158185A (ja) * | 2004-10-25 | 2006-06-15 | Toshiba Corp | 電力用半導体装置 |
US7348826B1 (en) * | 2005-03-18 | 2008-03-25 | Qspeed Semiconductor Inc. | Composite field effect transistor |
US7466185B2 (en) * | 2006-10-23 | 2008-12-16 | Infineon Technologies Ag | IGBT-Driver circuit for desaturated turn-off with high desaturation level |
CN101030733B (zh) * | 2007-03-21 | 2011-04-13 | 中国科学院电工研究所 | 一种轻型单元级联式多电平功率变换器 |
FR2928056B1 (fr) * | 2008-02-21 | 2010-02-19 | Schneider Toshiba Inverter | Dispositif de protection d'un variateur de vitesse contre les surintensites. |
JP2011029386A (ja) * | 2009-07-24 | 2011-02-10 | Sharp Corp | 半導体装置および電子機器 |
JP5492518B2 (ja) * | 2009-10-02 | 2014-05-14 | 株式会社日立製作所 | 半導体駆動回路、及びそれを用いた半導体装置 |
US8400789B2 (en) * | 2010-04-27 | 2013-03-19 | Power Integrations, Inc. | Power supply with input filter-controlled switch clamp circuit |
-
2012
- 2012-03-30 FR FR1252956A patent/FR2988931B1/fr not_active Expired - Fee Related
-
2013
- 2013-03-06 ES ES13157990T patent/ES2717700T3/es active Active
- 2013-03-06 EP EP13157990.6A patent/EP2645569B1/fr active Active
- 2013-03-12 US US13/795,319 patent/US9543841B2/en active Active
- 2013-03-26 IN IN1327CH2013 patent/IN2013CH01327A/en unknown
- 2013-03-26 JP JP2013063823A patent/JP6275391B2/ja active Active
- 2013-03-27 BR BR102013007359-8A patent/BR102013007359B1/pt active IP Right Grant
- 2013-04-01 CN CN201310110219.2A patent/CN103368403B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
FR2988931B1 (fr) | 2015-10-16 |
JP6275391B2 (ja) | 2018-02-07 |
EP2645569A1 (fr) | 2013-10-02 |
JP2013215086A (ja) | 2013-10-17 |
BR102013007359A2 (pt) | 2015-07-14 |
US20130258721A1 (en) | 2013-10-03 |
EP2645569B1 (fr) | 2019-01-02 |
US9543841B2 (en) | 2017-01-10 |
CN103368403A (zh) | 2013-10-23 |
FR2988931A1 (fr) | 2013-10-04 |
BR102013007359B1 (pt) | 2020-07-14 |
ES2717700T3 (es) | 2019-06-24 |
CN103368403B (zh) | 2017-03-01 |
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