IN2012DN02806A - - Google Patents
Download PDFInfo
- Publication number
- IN2012DN02806A IN2012DN02806A IN2806DEN2012A IN2012DN02806A IN 2012DN02806 A IN2012DN02806 A IN 2012DN02806A IN 2806DEN2012 A IN2806DEN2012 A IN 2806DEN2012A IN 2012DN02806 A IN2012DN02806 A IN 2012DN02806A
- Authority
- IN
- India
- Prior art keywords
- sub
- cells
- groups
- responsive
- light spectrum
- Prior art date
Links
- 239000000463 material Substances 0.000 abstract 2
- 238000001228 spectrum Methods 0.000 abstract 2
- 230000005693 optoelectronics Effects 0.000 abstract 1
- 230000006798 recombination Effects 0.000 abstract 1
- 238000005215 recombination Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/50—Photovoltaic [PV] devices
- H10K30/57—Photovoltaic [PV] devices comprising multiple junctions, e.g. tandem PV cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/20—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising organic-organic junctions, e.g. donor-acceptor junctions
- H10K30/211—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising organic-organic junctions, e.g. donor-acceptor junctions comprising multiple junctions, e.g. double heterojunctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
- H10K85/211—Fullerenes, e.g. C60
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Electromagnetism (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
Abstract
A photosensitive optoelectronic device (1) comprises a plurality of organic semiconductor sub-cells (10, 11, 12, 13) arranged in a stack between electrodes (3, 5), each sub-cell comprising donor material (14, 16, 23, 25) and acceptor material (15, 17, 24, 26) providing a heterojunction. There is a recombination layer (19, 22, 28) between adjacent sub-cells. The sub-cells are arranged in two groups (20, 29). The sub-cells (10, 11; 12, 13) within a group (20; 29) are responsive over substantially the same part of the light spectrum. The groups (20, 29) differ substantially from each other in respect of the parts of the light spectrum over which their respective sub-cells are responsive.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GBGB0915501.1A GB0915501D0 (en) | 2009-09-04 | 2009-09-04 | Organic photosensitive optoelectronic devices |
PCT/GB2010/001673 WO2011027124A1 (en) | 2009-09-04 | 2010-09-03 | Organic photosensitive optoelectronic devices |
Publications (1)
Publication Number | Publication Date |
---|---|
IN2012DN02806A true IN2012DN02806A (en) | 2015-07-24 |
Family
ID=41203227
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IN2806DEN2012 IN2012DN02806A (en) | 2009-09-04 | 2010-09-03 |
Country Status (9)
Country | Link |
---|---|
US (1) | US20120241717A1 (en) |
EP (1) | EP2474035A1 (en) |
JP (1) | JP2013504196A (en) |
KR (1) | KR20120054643A (en) |
CN (1) | CN102625954A (en) |
CA (1) | CA2785853A1 (en) |
GB (1) | GB0915501D0 (en) |
IN (1) | IN2012DN02806A (en) |
WO (1) | WO2011027124A1 (en) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2948463A2 (en) | 2013-03-11 | 2015-12-02 | Saudi Basic Industries Corporation | Aryloxy-phthalocyanines of group iv metals |
BR112015021337A2 (en) | 2013-03-11 | 2017-07-18 | Saudi Basic Ind Corp | aryloxy phthalocyanines of group III metals |
WO2015025333A1 (en) * | 2013-08-20 | 2015-02-26 | Council Of Scientific & Industrial Research | Multilayer solar cell |
US9985153B2 (en) * | 2013-08-29 | 2018-05-29 | University Of Florida Research Foundation, Incorporated | Air stable infrared photodetectors from solution-processed inorganic semiconductors |
US11145834B2 (en) * | 2014-01-15 | 2021-10-12 | The Regents Of The University Of Michigan | High efficiency multi-junction small-molecule photovoltaic devices |
CN106960911A (en) * | 2017-04-11 | 2017-07-18 | 芜湖乐知智能科技有限公司 | A kind of pair of photosensitive layer hybrid solar cell and preparation method thereof |
Family Cites Families (65)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3094633A (en) * | 1960-09-29 | 1963-06-18 | Itt | Semiconductor multiplanar rectifying junction diode |
NL285545A (en) * | 1961-11-17 | |||
NL6512513A (en) * | 1964-12-01 | 1966-06-02 | ||
US3368123A (en) * | 1965-02-04 | 1968-02-06 | Gen Motors Corp | Semiconductor device having uniform current density on emitter periphery |
US3794892A (en) * | 1965-03-16 | 1974-02-26 | United Aircraft Corp | Semiconductive encoder |
US3396317A (en) * | 1965-11-30 | 1968-08-06 | Texas Instruments Inc | Surface-oriented high frequency diode |
US3725136A (en) * | 1971-06-01 | 1973-04-03 | Texas Instruments Inc | Junction field effect transistor and method of fabrication |
US3878553A (en) * | 1972-12-26 | 1975-04-15 | Texas Instruments Inc | Interdigitated mesa beam lead diode and series array thereof |
US4041516A (en) * | 1974-01-04 | 1977-08-09 | Litronix, Inc. | High intensity light-emitting diode |
CA1135854A (en) * | 1977-09-30 | 1982-11-16 | Michel Moussie | Programmable read only memory cell |
JPS5846174B2 (en) * | 1981-03-03 | 1983-10-14 | 株式会社東芝 | semiconductor integrated circuit |
US4570173A (en) * | 1981-05-26 | 1986-02-11 | General Electric Company | High-aspect-ratio hollow diffused regions in a semiconductor body |
US4532537A (en) * | 1982-09-27 | 1985-07-30 | Rca Corporation | Photodetector with enhanced light absorption |
US4558345A (en) * | 1983-10-27 | 1985-12-10 | Rca Corporation | Multiple connection bond pad for an integrated circuit device and method of making same |
DE4035500A1 (en) * | 1990-11-08 | 1992-05-14 | Bosch Gmbh Robert | ELECTRONIC SWITCH |
JP2748797B2 (en) * | 1992-10-06 | 1998-05-13 | 三菱電機株式会社 | Semiconductor device |
JP3322738B2 (en) * | 1993-12-08 | 2002-09-09 | 株式会社半導体エネルギー研究所 | Semiconductor device, integrated circuit, and display device |
US6097063A (en) * | 1996-01-22 | 2000-08-01 | Fuji Electric Co., Ltd. | Semiconductor device having a plurality of parallel drift regions |
US5847441A (en) * | 1996-05-10 | 1998-12-08 | Micron Technology, Inc. | Semiconductor junction antifuse circuit |
US5894164A (en) * | 1996-09-17 | 1999-04-13 | Kabushiki Kaisha Toshiba | High voltage semiconductor device |
GB9826291D0 (en) * | 1998-12-02 | 1999-01-20 | Koninkl Philips Electronics Nv | Field-effect semi-conductor devices |
KR100263912B1 (en) * | 1998-05-20 | 2000-09-01 | 김덕중 | Diode of semiconductor device and method for fabricating the same |
EP2298547A1 (en) * | 1998-08-19 | 2011-03-23 | The Trustees Of Princeton University | Organic photosensitive optoelectronic device |
US6352777B1 (en) * | 1998-08-19 | 2002-03-05 | The Trustees Of Princeton University | Organic photosensitive optoelectronic devices with transparent electrodes |
US6451415B1 (en) * | 1998-08-19 | 2002-09-17 | The Trustees Of Princeton University | Organic photosensitive optoelectronic device with an exciton blocking layer |
US6097147A (en) | 1998-09-14 | 2000-08-01 | The Trustees Of Princeton University | Structure for high efficiency electroluminescent device |
JP2000277622A (en) * | 1999-01-18 | 2000-10-06 | Sony Corp | Semiconductor device and its manufacture |
JP3792931B2 (en) * | 1999-03-15 | 2006-07-05 | 株式会社東芝 | Semiconductor device and test method thereof |
JP2001250867A (en) * | 2000-03-07 | 2001-09-14 | Fujitsu Ltd | Semiconductor device and method of manufacturing the same |
US6518604B1 (en) * | 2000-09-21 | 2003-02-11 | Conexant Systems, Inc. | Diode with variable width metal stripes for improved protection against electrostatic discharge (ESD) current failure |
US6657378B2 (en) | 2001-09-06 | 2003-12-02 | The Trustees Of Princeton University | Organic photovoltaic devices |
DE10140991C2 (en) * | 2001-08-21 | 2003-08-21 | Osram Opto Semiconductors Gmbh | Organic light-emitting diode with energy supply, manufacturing process therefor and applications |
JP3778152B2 (en) * | 2002-09-27 | 2006-05-24 | 株式会社デンソー | diode |
US6621138B1 (en) * | 2002-10-21 | 2003-09-16 | Micrel, Inc. | Zener-like trim device in polysilicon |
JP4297677B2 (en) * | 2002-10-29 | 2009-07-15 | 株式会社ルネサステクノロジ | Manufacturing method of semiconductor device |
WO2004083958A2 (en) * | 2003-03-19 | 2004-09-30 | Technische Universität Dresden | Photoactive component comprising organic layers |
CN102386330B (en) * | 2003-04-18 | 2014-10-22 | 株式会社半导体能源研究所 | Quinoxaline derivative, and organic semiconductor device, electric field light emitting device, and electronic device which have the same |
US6841846B1 (en) * | 2003-07-22 | 2005-01-11 | Actel Corporation | Antifuse structure and a method of forming an antifuse structure |
US7057258B2 (en) * | 2003-10-29 | 2006-06-06 | Hewlett-Packard Development Company, L.P. | Resistive memory device and method for making the same |
JP4925569B2 (en) * | 2004-07-08 | 2012-04-25 | ローム株式会社 | Organic electroluminescent device |
US7196366B2 (en) * | 2004-08-05 | 2007-03-27 | The Trustees Of Princeton University | Stacked organic photosensitive devices |
US7375370B2 (en) * | 2004-08-05 | 2008-05-20 | The Trustees Of Princeton University | Stacked organic photosensitive devices |
CA2588113C (en) * | 2004-11-24 | 2014-11-18 | The Trustees Of Princeton University | Organic photosensitive optoelectronic device having a phenanthroline exciton blocking layer |
EP1724822A3 (en) * | 2005-05-17 | 2007-01-24 | Sumco Corporation | Semiconductor substrate and manufacturing method thereof |
WO2006130717A2 (en) * | 2005-06-02 | 2006-12-07 | The Regents Of The University Of California | Effective organic solar cells based on triplet materials |
US7230269B2 (en) * | 2005-06-13 | 2007-06-12 | The Trustees Of Princeton University | Organic photosensitive cells having a reciprocal-carrier exciton blocking layer |
JP2007035893A (en) * | 2005-07-26 | 2007-02-08 | Matsushita Electric Works Ltd | Organic power generation element |
US8017863B2 (en) * | 2005-11-02 | 2011-09-13 | The Regents Of The University Of Michigan | Polymer wrapped carbon nanotube near-infrared photoactive devices |
US7737533B2 (en) * | 2006-08-10 | 2010-06-15 | Vishay General Semiconductor Llc | Low voltage transient voltage suppressor with tapered recess extending into substrate of device allowing for reduced breakdown voltage |
DE102006052608B4 (en) * | 2006-11-08 | 2009-04-16 | Leonhard Kurz Gmbh & Co. Kg | Solar cell based on polymer |
US7880201B2 (en) * | 2006-11-09 | 2011-02-01 | International Business Machines Corporation | Optical modulator using a serpentine dielectric layer between silicon layers |
US8399959B2 (en) * | 2007-05-30 | 2013-03-19 | Broadcom Corporation | Programmable poly fuse |
JP5315008B2 (en) * | 2007-11-16 | 2013-10-16 | 株式会社半導体エネルギー研究所 | Photoelectric conversion device |
JP4574667B2 (en) * | 2007-11-30 | 2010-11-04 | Okiセミコンダクタ株式会社 | Photodiode manufacturing method and photodiode formed using the same |
JP4530179B2 (en) * | 2008-01-22 | 2010-08-25 | Okiセミコンダクタ株式会社 | Photodiode, ultraviolet sensor including the same, and method for manufacturing photodiode |
KR101051673B1 (en) * | 2008-02-20 | 2011-07-26 | 매그나칩 반도체 유한회사 | Anti-fuse and method of forming the same, unit cell of nonvolatile memory device having same |
JP5267246B2 (en) * | 2008-03-26 | 2013-08-21 | 凸版印刷株式会社 | ORGANIC ELECTROLUMINESCENT ELEMENT, ITS MANUFACTURING METHOD, AND ORGANIC ELECTROLUMINESCENT DISPLAY |
JP2011526737A (en) * | 2008-07-03 | 2011-10-13 | アイメック | Multijunction solar cell module and process thereof |
KR20100074715A (en) * | 2008-12-24 | 2010-07-02 | 주식회사 하이닉스반도체 | Melting fuse of semiconductor and method for forming the same |
JP5436867B2 (en) * | 2009-01-09 | 2014-03-05 | ルネサスエレクトロニクス株式会社 | Method for manufacturing a fuse element |
WO2011023922A1 (en) * | 2009-08-28 | 2011-03-03 | X-Fab Semiconductor Foundries Ag | Improved pn junctions and methods |
US8344428B2 (en) * | 2009-11-30 | 2013-01-01 | International Business Machines Corporation | Nanopillar E-fuse structure and process |
US8212250B2 (en) * | 2009-12-10 | 2012-07-03 | Leonard Forbes | Backside texturing by cusps to improve IR response of silicon solar cells and photodetectors |
US20130240847A1 (en) * | 2010-05-21 | 2013-09-19 | Solarno, Inc. | Monolithic parallel multijunction oled with independent tunable color emission |
KR20120050338A (en) * | 2010-11-10 | 2012-05-18 | 삼성전자주식회사 | Electrical fuse using junction breakdown and semiconductor integrated circuit |
-
2009
- 2009-09-04 GB GBGB0915501.1A patent/GB0915501D0/en not_active Ceased
-
2010
- 2010-09-03 CN CN2010800476978A patent/CN102625954A/en active Pending
- 2010-09-03 WO PCT/GB2010/001673 patent/WO2011027124A1/en active Application Filing
- 2010-09-03 JP JP2012527381A patent/JP2013504196A/en active Pending
- 2010-09-03 KR KR1020127008679A patent/KR20120054643A/en not_active Application Discontinuation
- 2010-09-03 CA CA2785853A patent/CA2785853A1/en not_active Abandoned
- 2010-09-03 US US13/393,759 patent/US20120241717A1/en not_active Abandoned
- 2010-09-03 EP EP10757449A patent/EP2474035A1/en not_active Withdrawn
- 2010-09-03 IN IN2806DEN2012 patent/IN2012DN02806A/en unknown
Also Published As
Publication number | Publication date |
---|---|
EP2474035A1 (en) | 2012-07-11 |
GB0915501D0 (en) | 2009-10-07 |
JP2013504196A (en) | 2013-02-04 |
WO2011027124A1 (en) | 2011-03-10 |
CN102625954A (en) | 2012-08-01 |
CA2785853A1 (en) | 2011-03-10 |
US20120241717A1 (en) | 2012-09-27 |
KR20120054643A (en) | 2012-05-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
IN2012DN02806A (en) | ||
TW200731592A (en) | An organic light emitting device with a plurality of organic electroluminescent units stacked upon each other | |
WO2008008477A3 (en) | Architectures and criteria for the design of high efficiency organic photovoltaic cells | |
WO2011084836A3 (en) | Thin-film photovoltaic module | |
TW200723561A (en) | Single chip with multi-LED | |
WO2012018237A3 (en) | Tandem solar cell using amorphous silicon solar cell and organic solar cell | |
WO2008091846A3 (en) | Illumination devices using externally interconnected arrays of light emitting devices, and methods of fabricating same | |
WO2009024509A3 (en) | Solar cell construction | |
TW200644233A (en) | Semiconductor device including a superlattice and adjacent semiconductor layer with doped regions defining a semiconductor junction | |
WO2013049062A3 (en) | Highly-fluorescent and photo-stable chromophores for enhanced solar harvesting efficiency | |
TW200733781A (en) | OLED having stacked organic light-emitting units | |
EP2290689A3 (en) | Light emitting device and light emitting device package having the same | |
FR2914501B1 (en) | PHOTOVOLTAIC DEVICE WITH DISCONTINUOUS INTERDIGITED HETEROJUNCTION STRUCTURE | |
EP2960946A3 (en) | Solar cell module | |
ATE480870T1 (en) | PHOTOVOLTAIC TANDEM CELLS | |
WO2010000855A3 (en) | Multi -junction photovoltaic module and the processing thereof | |
TW200701452A (en) | Semiconductor device including a superlattice with regions defining a semiconductor junction | |
WO2012039555A3 (en) | Wafer-level light emitting diode package and method of fabricating the same | |
PH12016501676B1 (en) | Solar cell having a plurality of sub-cells coupled by a metallization structure | |
WO2009069929A3 (en) | Semiconductor light emitting device | |
WO2008122907A3 (en) | Light emitting device | |
HK1144983A1 (en) | Efficient solar cells using all-organic nanocrystalline networks | |
WO2010037102A3 (en) | Monolithically-integrated solar module | |
WO2012061463A3 (en) | Luminescent solar concentrator apparatus, method and applications | |
WO2012168422A3 (en) | Device for generating photovoltaic energy with individual cell management |