IN2012DN02365A - - Google Patents

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Publication number
IN2012DN02365A
IN2012DN02365A IN2365DEN2012A IN2012DN02365A IN 2012DN02365 A IN2012DN02365 A IN 2012DN02365A IN 2365DEN2012 A IN2365DEN2012 A IN 2365DEN2012A IN 2012DN02365 A IN2012DN02365 A IN 2012DN02365A
Authority
IN
India
Prior art keywords
increased
surface area
substrate
rectifier
increased current
Prior art date
Application number
Inventor
Hung-Ping Tsai
Shih-Kuan Chen
Lung-Ching Kao
Original Assignee
Vishay Gen Semiconductor Llc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Vishay Gen Semiconductor Llc filed Critical Vishay Gen Semiconductor Llc
Publication of IN2012DN02365A publication Critical patent/IN2012DN02365A/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/045—Manufacture or treatment of PN junction diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/50—PIN diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H10D8/605—Schottky-barrier diodes  of the trench conductor-insulator-semiconductor barrier type, e.g. trench MOS barrier Schottky rectifiers [TMBS]

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Thyristors (AREA)
  • Rectifiers (AREA)

Abstract

A high power density or low forward voltage rectifier which utilizes at least one trench in both the anode and cathode. The trenches are formed in opposing surfaces of the substrate, to increase the junction surface area per unit surface area of the semiconductor die. This structure allows for increased current loads without increased horizontal die space. The increased current handling capability allows for the rectifier to operate at lower forward voltages. Furthermore, the present structure provides for increased substrate usage by up to 30 percent.
IN2365DEN2012 2009-09-23 2010-09-20 IN2012DN02365A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/565,201 US8125056B2 (en) 2009-09-23 2009-09-23 Double trench rectifier
PCT/US2010/049465 WO2011037858A1 (en) 2009-09-23 2010-09-20 Double trench rectifier

Publications (1)

Publication Number Publication Date
IN2012DN02365A true IN2012DN02365A (en) 2015-08-21

Family

ID=43755902

Family Applications (1)

Application Number Title Priority Date Filing Date
IN2365DEN2012 IN2012DN02365A (en) 2009-09-23 2010-09-20

Country Status (9)

Country Link
US (3) US8125056B2 (en)
EP (1) EP2481087A4 (en)
JP (1) JP2013506296A (en)
KR (1) KR20120069738A (en)
CN (1) CN102725848A (en)
IL (1) IL218722A (en)
IN (1) IN2012DN02365A (en)
TW (1) TW201130140A (en)
WO (1) WO2011037858A1 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101435520B1 (en) 2008-08-11 2014-09-01 삼성전자주식회사 Semiconductor device and pattern forming method of semiconductor device
KR101540083B1 (en) 2008-10-22 2015-07-30 삼성전자주식회사 Method for pattern formation of semiconductor device
KR101532012B1 (en) * 2008-12-24 2015-06-30 삼성전자주식회사 Semiconductor device and method of forming patterns for semiconductor device
KR101797964B1 (en) 2010-10-01 2017-11-15 삼성전자주식회사 Fabricating method of semiconductor device and the semiconductor device fabricated using the same method
DE102014105188A1 (en) * 2014-04-11 2015-10-15 Osram Opto Semiconductors Gmbh Semiconductor chip, optoelectronic component with semiconductor chip and method for producing a semiconductor chip
CN108682683A (en) * 2018-04-09 2018-10-19 重庆平伟实业股份有限公司 A kind of pressure eliminant power electronics diode and its production technology
TWI692866B (en) * 2018-08-17 2020-05-01 實用半導體有限公司 Semiconductor element, semiconductor substrate and semiconductor element manufacturing method
CN109686666A (en) * 2018-12-26 2019-04-26 常州星海电子股份有限公司 A kind of fast recovery chip manufacture method
CN114141883B (en) * 2021-12-10 2022-09-20 富芯微电子有限公司 Manufacturing method of fast recovery diode chip

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3553536A (en) * 1968-11-19 1971-01-05 Rca Corp Semiconductor rectifiers having controlled storage and recovery characteristics
GB2082836A (en) 1980-08-20 1982-03-10 Philips Electronic Associated Corrugated semiconductor devices
US5047829A (en) * 1986-10-30 1991-09-10 Texas Instruments Incorporated Monolithic p-i-n diode limiter
US4835580A (en) * 1987-04-30 1989-05-30 Texas Instruments Incorporated Schottky barrier diode and method
US5241195A (en) * 1992-08-13 1993-08-31 North Carolina State University At Raleigh Merged P-I-N/Schottky power rectifier having extended P-I-N junction
US6624493B1 (en) * 1994-05-31 2003-09-23 James D. Welch Biasing, operation and parasitic current limitation in single device equivalent to CMOS, and other semiconductor systems
US7323402B2 (en) * 2002-07-11 2008-01-29 International Rectifier Corporation Trench Schottky barrier diode with differential oxide thickness
DE102004053760A1 (en) 2004-11-08 2006-05-11 Robert Bosch Gmbh Semiconductor device and method for its production
FR2880193A1 (en) * 2004-12-23 2006-06-30 St Microelectronics Sa SCHOTTKY DIODE WITH VERTICAL BARRIER
US7489488B2 (en) * 2005-10-19 2009-02-10 Littelfuse, Inc. Integrated circuit providing overvoltage protection for low voltage lines
WO2007075996A2 (en) * 2005-12-27 2007-07-05 Qspeed Semiconductor Inc. Apparatus and method for a fast recovery rectifier structure
US20100025809A1 (en) * 2008-07-30 2010-02-04 Trion Technology, Inc. Integrated Circuit and Method of Forming Sealed Trench Junction Termination

Also Published As

Publication number Publication date
JP2013506296A (en) 2013-02-21
WO2011037858A1 (en) 2011-03-31
TW201130140A (en) 2011-09-01
US8963296B2 (en) 2015-02-24
US20110068439A1 (en) 2011-03-24
EP2481087A1 (en) 2012-08-01
US20140217561A1 (en) 2014-08-07
CN102725848A (en) 2012-10-10
US8643152B2 (en) 2014-02-04
US8125056B2 (en) 2012-02-28
KR20120069738A (en) 2012-06-28
IL218722A (en) 2016-03-31
IL218722A0 (en) 2012-06-28
EP2481087A4 (en) 2014-03-19
US20120223421A1 (en) 2012-09-06

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