CN108682683A - A kind of pressure eliminant power electronics diode and its production technology - Google Patents
A kind of pressure eliminant power electronics diode and its production technology Download PDFInfo
- Publication number
- CN108682683A CN108682683A CN201810310103.6A CN201810310103A CN108682683A CN 108682683 A CN108682683 A CN 108682683A CN 201810310103 A CN201810310103 A CN 201810310103A CN 108682683 A CN108682683 A CN 108682683A
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- Prior art keywords
- type layer
- pressure
- eliminant
- power electronics
- groove
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000005516 engineering process Methods 0.000 title claims abstract description 12
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 32
- 229910052802 copper Inorganic materials 0.000 claims abstract description 32
- 239000010949 copper Substances 0.000 claims abstract description 32
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 22
- 230000003647 oxidation Effects 0.000 claims abstract description 9
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 9
- 230000013011 mating Effects 0.000 claims abstract description 6
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 4
- 239000000956 alloy Substances 0.000 claims abstract description 4
- 238000005530 etching Methods 0.000 claims abstract description 4
- 238000001459 lithography Methods 0.000 claims abstract description 4
- 238000006263 metalation reaction Methods 0.000 claims abstract description 4
- 238000002161 passivation Methods 0.000 claims abstract description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 238000009792 diffusion process Methods 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 238000007747 plating Methods 0.000 claims description 3
- 238000005245 sintering Methods 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 4
- 230000017525 heat dissipation Effects 0.000 abstract description 4
- 238000010438 heat treatment Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/8613—Mesa PN junction diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
Abstract
The invention discloses a kind of pressure eliminant power electronics diodes, including the copper-based of P-type layer, P+ type layer, N+ types layer, N types layer and both ends, be equipped with groove close to the surface of P+ type layer in P-type layer, P+ type layer, P+ type layer with it is corresponding it is copper-based between scolding tin, corresponding copper-based inner surface be disposed as the shape mating with the groove in P-type layer.The invention also discloses a kind of production technologies of pressure eliminant power electronics diode, include the following steps：Egative film prepares；Groove etching；Ion implanting；Trench etch；Passivation Treatment；Oxidation film is sintered；Lithography fair lead；Surface metalation；Both ends are connect by scolding tin with copper-based progress alloy, pressure eliminant power electronics diode is formed.Pressure surface area bigger of the eliminant power electronics diode P-type layer by P+ type layer and scolding tin and corresponding copper-based contact of the present invention extends the application range of power electronics diode to be obviously improved electric current handling capacity, pressure-resistant performance and heat dissipation effect.
Description
Technical field
The present invention relates to a kind of power electronics diode and its production technology more particularly to a kind of pressure eliminant power electronics two
Pole pipe and its production technology.
Background technology
When power electronic devices works, device heating, heating can be caused because of power attenuation.Device temperature is excessively high will to shorten the longevity
Life, or even burn, this is the main reason for limiting power electronic devices electric current, voltage capacity.For that purpose it is necessary to consider the cold of device
But problem.With the continuous development that power electronic technique is applied, the requirement to power electronic devices performance indicator and reliability
It is increasingly strict.Specifically, it is desirable that power electronic devices has the current density of bigger, higher operating temperature, stronger dissipates
Thermal energy power, higher operating voltage, lower on-state voltage drop, faster switch time, and for space flight and Military Application, also want
Stronger capability of resistance to radiation and anti-vibrating and impact ability are asked.
For the application problem more than overcoming, if designing with good heat radiating ability and having sufficiently high reversed resistance to
A kind of pressure eliminant power electronics diode of pressure just has great application prospect, future to can be used for intelligent grid, automotive electronics, letter
Breath and office automation, household special power supply, traction special power supply, new energy, solar energy, wind energy and fuel cell power source etc..
But traditional power electronics diode, P-type layer surface are plane, pass through scolding tin and copper-based electric connection
Contact surface be also plane, there is a problem of that electric current handling capacity is insufficient, pressure-resistant performance is insufficient, heat dissipation effect is poor, limit
The application range of power electronics diode.
Invention content
The purpose of the present invention is that solve the above-mentioned problems and provides that a kind of electric current handling capacity is strong, pressure-resistant performance
Good, heat dissipation effect preferably presses eliminant power electronics diode and its production technology.
The present invention is achieved through the following technical solutions above-mentioned purpose：
A kind of pressure eliminant power electronics diode, including P-type layer, P+ type layer, N+ types layer, N-type layer and the copper at both ends
Base, the P+ type layer and the N+ types layer are respectively by the copper-based connection of scolding tin and both ends, close to described in the P-type layer
The surface of P+ type layer be equipped with groove, the P+ type layer, the P+ type layer with it is corresponding it is described it is copper-based between scolding tin, corresponding institute
It states copper-based inner surface and is disposed as the shape mating with the groove in the P-type layer.Here mating, refer on P+ type layer and
Position corresponding with the groove of P-type layer is equipped with recessed groove, copper-based inner surface position corresponding with the groove of P-type layer on scolding tin
Corresponding convex block is installed.
Specifically, the groove in the P-type layer is four circular grooves and is uniformly distributed in the surface of the P-type layer, institute
The depth for stating circular groove is 20-30um, radius 100-1000um.
Alternatively, the groove in the P-type layer is a square groove, the depth of the square groove is 20-30um, side
A length of 200-2000um.
A kind of production technology of pressure eliminant power electronics diode, includes the following steps：
Step (1)：Egative film prepares：The egative film division chip area of P-type layer, N-type layer, N+ type layers will have been spread；
Step (2)：Groove etching：Etch depth is the groove of 20-30um on the outer surface of the P-type layer；
Step (3)：Ion implanting：P+ is formed by way of ion implanting on the P-type layer surface once etched
Type layer；
Step (4)：Trench etch：Trench etch is carried out according to required chip area, is partitioned into respective chip area；
Step (5)：Passivation Treatment：Processing is passivated to groove with SIPOS；SIPOS is to mix oxygen semi-insulating polysilicon
Film has half insulation and electroneutral；
Step (6)：Oxidation film is sintered：Vitreous coating and sintering processes are carried out on the outside of the P-type layer and the N-type layer
Form oxidation film；
Step (7)：Lithography fair lead；
Step (8)：Surface metalation：Gold-plated or Nickel Plating Treatment is carried out in two end surfaces；
Step (9)：Both ends are connect by scolding tin with copper-based progress alloy, pressure eliminant power electronics diode is formed.
Preferably, in the step (1), diffusion depth 70-90um, the electrical resistivity range 45-70 of the P-type layer
Ω·cm。
Preferably, in the step (3), the thickness of the P+ type layer is 2-5um, a concentration of 1*1020cm-3。
The beneficial effects of the present invention are：
The present invention by being arranged groove on P-type layer surface, and by P+ type layer and corresponding scolding tin, copper-based carry out corresponding shape
The adaptability design of shape, the surface area bigger for making P-type layer pass through P+ type layer and scolding tin with corresponding copper-based contact, to significantly
Electric current handling capacity, pressure-resistant performance and heat dissipation effect are improved, the application range of power electronics diode is extended, it is especially suitable
In the high requests such as space flight and Military Application application scenario.
Description of the drawings
Fig. 1 is one of the sectional view of pressure eliminant power electronics diode of the present invention；
Fig. 2 is one of the vertical view of P-type layer of pressure eliminant power electronics diode of the present invention；
Fig. 3 is the two of the sectional view of pressure eliminant power electronics diode of the present invention；
Fig. 4 is the two of the vertical view of the P-type layer of pressure eliminant power electronics diode of the present invention.
Specific implementation mode
With reference to embodiment and attached drawing, the invention will be further described：
Embodiment 1：
As depicted in figs. 1 and 2, a kind of pressure eliminant power electronics diode, including P-type layer 4, P+ type layer 3, N+ types layer 7,
Copper-based the 1 of N-type layer 6 and both ends, P+ type layer 3 and N+ types layer 7 are connect by scolding tin 2 with copper-based the 1 of both ends respectively, P-type layer 4
The upper surface close to P+ type layer 3 sets that there are four the circular groove 41 on the surface for being uniformly distributed in P types layer 4, the depths of circular groove 41
Degree is 20-30um, radius 100-1000um, and P+ type layer 3, P+ type layer 3 (are in figure with the scolding tin 2 between corresponding copper-based 1
The scolding tin 2 on top), it is corresponding that copper-based 1 (inner surface of copper-based 1) in figure for top is disposed as and the groove in P-type layer 4
41 mating shapes, i.e., on P+ type layer 3, on scolding tin 2 position corresponding with four circular grooves 41 of P-type layer 4 be equipped with it is recessed
Four grooves, copper-based 2 inner surface position corresponding with four circular grooves 41 of P-type layer 4 is equipped with corresponding four convex blocks；
The outside of P-type layer 4 and N-type layer 6 is equipped with oxidation film 5.
Embodiment 2：
As shown in Figure 3 and Figure 4, a kind of pressure eliminant power electronics diode, including P-type layer 4, P+ type layer 3, N+ types layer 7,
Copper-based the 1 of N-type layer 6 and both ends, P+ type layer 3 and N+ types layer 7 are connect by scolding tin 2 with copper-based the 1 of both ends respectively, P-type layer 4
The upper surface close to P+ type layer 3 sets that there are one the square groove 42 that depth is 200-2000um as 20-30um, the length of side, P+ type layers
3, the scolding tin 2 between P+ type layer 3 and corresponding copper-based 1 (being the scolding tin 2 on top in figure), corresponding copper-based 1 (are top in figure
Copper-based inner surface 1) is disposed as the shape mating with the groove 41 in P-type layer 4, i.e., on P+ type layer 3, on scolding tin 2 with P
The 42 corresponding position of square groove of type layer 4 is equipped with a recessed square groove, the side of copper-based 2 inner surface and P-type layer 4
42 corresponding position of connected in star is equipped with a corresponding bumping square；The outside of P-type layer 4 and N-type layer 6 is equipped with oxidation film 5.
The production technology of the pressure eliminant power electronics diode of above-mentioned two embodiment is consistent, includes the following steps：
Step (1)：Egative film prepares：The egative film division chip area of P-type layer 4, N-type layer 6, N+ types layer 7, p-type will have been spread
The diffusion depth 70-90um of layer 4, electrical resistivity range are 45-70 Ω cm；
Step (2)：Groove etching：Etch depth is corresponding recesses i.e. four of 20-30um on the outer surface of P-type layer 4
A circular groove 41 or a square groove 42；
Step (3)：Ion implanting：P+ type is formed by way of ion implanting on the surface of the P-type layer 4 once etched
The thickness of layer 3, P+ type layer 3 is 2-5um, a concentration of 1*1020cm-3；
Step (4)：Trench etch：Trench etch is carried out according to required chip area, is partitioned into respective chip area；
Step (5)：Passivation Treatment：Processing is passivated to groove with SIPOS；
Step (6)：Oxidation film is sintered：Vitreous coating is carried out in the outside of P-type layer 4 and N-type layer 6 and sintering processes are formed
Oxidation film 5；
Step (7)：Lithography fair lead；
Step (8)：Surface metalation：Gold-plated or Nickel Plating Treatment is carried out in two end surfaces；
Step (9)：Both ends are connect by scolding tin 2 with copper-based 1 progress alloy, pressure eliminant power electronics diode is formed.
Above-described embodiment is presently preferred embodiments of the present invention, is not the limitation to technical solution of the present invention, as long as
Without the technical solution that creative work can be realized on the basis of the above embodiments, it is regarded as falling into patent of the present invention
Rights protection scope in.
Claims (6)
1. a kind of pressure eliminant power electronics diode, including P-type layer, P+ type layer, N+ types layer, N-type layer and both ends it is copper-based,
The P+ type layer and the N+ types layer pass through the copper-based connection of scolding tin and both ends respectively, it is characterised in that：In the P-type layer
Close to the P+ type layer surface be equipped with groove, the P+ type layer, the P+ type layer with it is corresponding it is described it is copper-based between scolding tin,
The corresponding copper-based inner surface is disposed as the shape mating with the groove in the P-type layer.
2. pressure eliminant power electronics diode according to claim 1, it is characterised in that：Groove in the P-type layer is
Four circular grooves and the surface for being uniformly distributed in the P-type layer, the depth of the circular groove is 20-30um, radius is
100-1000um。
3. pressure eliminant power electronics diode according to claim 1, it is characterised in that：Groove in the P-type layer is
One square groove, the depth of the square groove is 20-30um, length of side 200-2000um.
4. a kind of production technology of pressure eliminant power electronics diode as claimed in claim 1,2 or 3, it is characterised in that：Packet
Include following steps：
Step（1）：Egative film prepares：The egative film division chip area of P-type layer, N-type layer, N+ type layers will have been spread；
Step（2）：Groove etching：Etch depth is the groove of 20-30um on the outer surface of the P-type layer；
Step（3）：Ion implanting：P+ type layer is formed by way of ion implanting on the P-type layer surface once etched；
Step（4）：Trench etch：Trench etch is carried out according to required chip area, is partitioned into respective chip area；
Step（5）：Passivation Treatment：Processing is passivated to groove with SIPOS；
Step（6）：Oxidation film is sintered：Vitreous coating is carried out on the outside of the P-type layer and the N-type layer and sintering processes are formed
Oxidation film；
Step（7）：Lithography fair lead；
Step（8）：Surface metalation：Gold-plated or Nickel Plating Treatment is carried out in two end surfaces；
Step（9）：Both ends are connect by scolding tin with copper-based progress alloy, pressure eliminant power electronics diode is formed.
5. the production technology of pressure eliminant power electronics diode according to claim 4, it is characterised in that：The step
（1）In, the diffusion depth 70-90um of the P-type layer, electrical resistivity range are 45-70 Ω cm.
6. the production technology of pressure eliminant power electronics diode according to claim 4, it is characterised in that：The step
（3）In, the thickness of the P+ type layer is 2-5um, a concentration of。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810310103.6A CN108682683A (en) | 2018-04-09 | 2018-04-09 | A kind of pressure eliminant power electronics diode and its production technology |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810310103.6A CN108682683A (en) | 2018-04-09 | 2018-04-09 | A kind of pressure eliminant power electronics diode and its production technology |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108682683A true CN108682683A (en) | 2018-10-19 |
Family
ID=63800822
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810310103.6A Pending CN108682683A (en) | 2018-04-09 | 2018-04-09 | A kind of pressure eliminant power electronics diode and its production technology |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113054037A (en) * | 2019-12-27 | 2021-06-29 | 常州星海电子股份有限公司 | Fast recovery diode chip and manufacturing method thereof |
| CN113054037B (en) * | 2019-12-27 | 2024-05-03 | 常州星海电子股份有限公司 | Fast recovery diode chip and manufacturing method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102725848A (en) * | 2009-09-23 | 2012-10-10 | 维谢综合半导体有限责任公司 | Double trench rectifier |
| US20130240905A1 (en) * | 2011-09-08 | 2013-09-19 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | Silicon Carbide Rectifier |
| CN205428951U (en) * | 2016-03-14 | 2016-08-03 | 江苏捷捷微电子股份有限公司 | VR is greater than 2600V's square piece formula glass passivation diode chip |
-
2018
- 2018-04-09 CN CN201810310103.6A patent/CN108682683A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102725848A (en) * | 2009-09-23 | 2012-10-10 | 维谢综合半导体有限责任公司 | Double trench rectifier |
| US20130240905A1 (en) * | 2011-09-08 | 2013-09-19 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | Silicon Carbide Rectifier |
| CN205428951U (en) * | 2016-03-14 | 2016-08-03 | 江苏捷捷微电子股份有限公司 | VR is greater than 2600V's square piece formula glass passivation diode chip |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113054037A (en) * | 2019-12-27 | 2021-06-29 | 常州星海电子股份有限公司 | Fast recovery diode chip and manufacturing method thereof |
| CN113054037B (en) * | 2019-12-27 | 2024-05-03 | 常州星海电子股份有限公司 | Fast recovery diode chip and manufacturing method thereof |
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Application publication date: 20181019 |