IN2012DN02318A - - Google Patents

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Publication number
IN2012DN02318A
IN2012DN02318A IN2318DEN2012A IN2012DN02318A IN 2012DN02318 A IN2012DN02318 A IN 2012DN02318A IN 2318DEN2012 A IN2318DEN2012 A IN 2318DEN2012A IN 2012DN02318 A IN2012DN02318 A IN 2012DN02318A
Authority
IN
India
Prior art keywords
averaged
coating
gas phase
range
percentual
Prior art date
Application number
Other languages
English (en)
Inventor
Frank Hergert
Jan Rudolf Thyen
Volker Probst
Original Assignee
Bosch Gmbh Robert
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bosch Gmbh Robert filed Critical Bosch Gmbh Robert
Publication of IN2012DN02318A publication Critical patent/IN2012DN02318A/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
    • H01L31/02165—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors using interference filters, e.g. multilayer dielectric filters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/048—Encapsulation of modules
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H01L31/022483—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of zinc oxide [ZnO]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24942—Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree
    • Y10T428/2495—Thickness [relative or absolute]
    • Y10T428/24967—Absolute thicknesses specified
    • Y10T428/24975—No layer or component greater than 5 mils thick

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Manufacturing & Machinery (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
  • Optical Filters (AREA)
IN2318DEN2012 2009-09-23 2010-09-23 IN2012DN02318A (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP09012122A EP2302688A1 (de) 2009-09-23 2009-09-23 Verfahren zur Herstellung eines Substrats mit einer farbigen Interferenzfilterschicht, dieses Substrat, enthaltend eine farbige Interferenzfilterschicht, die Verwendung dieses Substrats als farbige Solarzelle oder als farbiges Solarmodul oder als Bestandteil hiervon sowie ein Array, umfassend mindestens zwei dieser Substrate
PCT/EP2010/064052 WO2011036209A1 (de) 2009-09-23 2010-09-23 Verfahren zur herstellung eines substrats mit einer farbigen interferenzfilterschicht, dieses substrat, enthaltend eine farbige interferenzfilterschicht, die verwendung dieses substrats als farbige solarzelle oder als farbiges solarmodul oder als bestandteil hiervon sowie ein array, umfassend mindestens zwei dieser substrate

Publications (1)

Publication Number Publication Date
IN2012DN02318A true IN2012DN02318A (es) 2015-08-21

Family

ID=41571808

Family Applications (1)

Application Number Title Priority Date Filing Date
IN2318DEN2012 IN2012DN02318A (es) 2009-09-23 2010-09-23

Country Status (6)

Country Link
US (1) US9312413B2 (es)
EP (1) EP2302688A1 (es)
KR (1) KR101706411B1 (es)
CN (1) CN102498574B (es)
IN (1) IN2012DN02318A (es)
WO (1) WO2011036209A1 (es)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2302688A1 (de) 2009-09-23 2011-03-30 Robert Bosch GmbH Verfahren zur Herstellung eines Substrats mit einer farbigen Interferenzfilterschicht, dieses Substrat, enthaltend eine farbige Interferenzfilterschicht, die Verwendung dieses Substrats als farbige Solarzelle oder als farbiges Solarmodul oder als Bestandteil hiervon sowie ein Array, umfassend mindestens zwei dieser Substrate
US20140159637A1 (en) * 2012-08-19 2014-06-12 EnergyBionics, LLC Portable energy harvesting, storing, and charging device
CN110998866B (zh) * 2017-08-10 2022-12-06 株式会社钟化 太阳能电池模块
KR102267497B1 (ko) * 2018-02-13 2021-06-21 국민대학교산학협력단 효율 저하가 최소화된 칼라 박막 태양전지
ES2837041T3 (es) 2018-02-23 2021-06-29 Cnbm Bengbu Design & Res Institute For Glass Industry Co Ltd Módulo solar con efecto de color homogéneo
CN108706889A (zh) * 2018-05-08 2018-10-26 北京汉能光伏投资有限公司 一种镀膜板及其制备方法和一种太阳能组件
WO2021118982A1 (en) * 2019-12-10 2021-06-17 Trustees Of Boston University Apparatus and method for biomolecular analysis

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60142576A (ja) 1983-12-28 1985-07-27 Seiko Epson Corp 薄膜太陽電池基板
JPS60148174A (ja) 1984-01-12 1985-08-05 Seikosha Co Ltd 色つき太陽電池
JP2504610B2 (ja) 1990-07-26 1996-06-05 株式会社東芝 電力用半導体装置
JP2985376B2 (ja) 1991-06-27 1999-11-29 日本電気株式会社 自動周波数制御回路
DE69702277T2 (de) * 1996-03-06 2001-03-01 Canon K.K., Tokio/Tokyo Verfahren zur Herstellung einer Dünnzinkoxidfilm und Verfahren zur Herstellung eines Substrats einer Halbleiteranordnung und Verfahren zur Herstellung einer photoelektrischen Umwandlungsvorrichtung unter Verwendung dieser Film
US5849108A (en) * 1996-04-26 1998-12-15 Canon Kabushiki Kaisha Photovoltaic element with zno layer having increasing fluorine content in layer thickness direction
JPH09307132A (ja) 1996-05-20 1997-11-28 Citizen Watch Co Ltd 太陽電池装置およびその製造方法
US6238808B1 (en) * 1998-01-23 2001-05-29 Canon Kabushiki Kaisha Substrate with zinc oxide layer, method for producing zinc oxide layer, photovoltaic device, and method for producing photovoltaic device
JP4106735B2 (ja) 1998-04-13 2008-06-25 凸版印刷株式会社 太陽電池付反射型ディスプレイ
JP2000208793A (ja) 1999-01-18 2000-07-28 Fuji Electric Co Ltd 太陽電池モジュ―ルおよびその製造方法
US6459035B2 (en) 1999-12-27 2002-10-01 Asulab S.A. Photovoltaic cell having a colored appearance, particularly for a watch dial
JP2002148362A (ja) 2001-09-17 2002-05-22 Seiko Epson Corp 太陽電池付時計
AU2003254820A1 (en) * 2002-08-13 2004-03-03 Bridgestone Corporation Improvement of dye-sensitized solar cell
DE102004005050A1 (de) 2004-01-30 2005-08-25 Detlef Schulz Verfahren zur Energieumwandlung solarer Strahlung in elektrischen Strom und Wärme mit farbselektiven Interferenzfilterspiegeln und eine Vorrichtung eines Konzentrator-Solarkollektors mit farbselektiven Spiegeln zur Anwendung des Verfahrens
WO2006014608A1 (en) * 2004-07-21 2006-02-09 Tru Vue, Inc. Substrate coating
US20090078316A1 (en) 2007-09-24 2009-03-26 Qualcomm Incorporated Interferometric photovoltaic cell
US8058549B2 (en) * 2007-10-19 2011-11-15 Qualcomm Mems Technologies, Inc. Photovoltaic devices with integrated color interferometric film stacks
KR20100109924A (ko) 2007-12-21 2010-10-11 퀄컴 엠이엠스 테크놀로지스, 인크. 다중접합 광기전력 전지
ES2363580T3 (es) * 2009-06-10 2011-08-09 Suinno Solar Oy Célula solar de alta potencia.
EP2302688A1 (de) 2009-09-23 2011-03-30 Robert Bosch GmbH Verfahren zur Herstellung eines Substrats mit einer farbigen Interferenzfilterschicht, dieses Substrat, enthaltend eine farbige Interferenzfilterschicht, die Verwendung dieses Substrats als farbige Solarzelle oder als farbiges Solarmodul oder als Bestandteil hiervon sowie ein Array, umfassend mindestens zwei dieser Substrate
WO2011065084A1 (ja) * 2009-11-25 2011-06-03 シャープ株式会社 太陽電池モジュール及び太陽光発電装置

Also Published As

Publication number Publication date
KR20120072377A (ko) 2012-07-03
WO2011036209A1 (de) 2011-03-31
CN102498574B (zh) 2017-05-24
US9312413B2 (en) 2016-04-12
US20120298194A1 (en) 2012-11-29
KR101706411B1 (ko) 2017-02-13
CN102498574A (zh) 2012-06-13
EP2302688A1 (de) 2011-03-30

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