IN2012DE01202A - - Google Patents

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Publication number
IN2012DE01202A
IN2012DE01202A IN1202DE2012A IN2012DE01202A IN 2012DE01202 A IN2012DE01202 A IN 2012DE01202A IN 1202DE2012 A IN1202DE2012 A IN 1202DE2012A IN 2012DE01202 A IN2012DE01202 A IN 2012DE01202A
Authority
IN
India
Prior art keywords
capacitance
charge
voltage
integrating
convert
Prior art date
Application number
Other languages
English (en)
Inventor
Saravanan Vm
Baldwin Gerard
Walsh Paul
Hosseini Kaveh
Original Assignee
Cypress Semiconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cypress Semiconductor Corp filed Critical Cypress Semiconductor Corp
Priority to IN1202DE2012 priority Critical patent/IN2012DE01202A/en
Priority to US13/591,136 priority patent/US8791753B2/en
Publication of IN2012DE01202A publication Critical patent/IN2012DE01202A/en

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/30—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor
    • H03F3/3001—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor with field-effect transistors
    • H03F3/3022—CMOS common source output SEPP amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
    • H03F3/45183—Long tailed pairs
    • H03F3/45192—Folded cascode stages
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45475—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using IC blocks as the active amplifying circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45514—Indexing scheme relating to differential amplifiers the FBC comprising one or more switched capacitors, and being coupled between the LC and the IC
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45536—Indexing scheme relating to differential amplifiers the FBC comprising a switch and being coupled between the LC and the IC

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
IN1202DE2012 2012-04-18 2012-04-18 IN2012DE01202A (cs)

Priority Applications (2)

Application Number Priority Date Filing Date Title
IN1202DE2012 IN2012DE01202A (cs) 2012-04-18 2012-04-18
US13/591,136 US8791753B2 (en) 2012-04-18 2012-08-21 Slew rate and bandwidth enhancement in reset

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IN1202DE2012 IN2012DE01202A (cs) 2012-04-18 2012-04-18

Publications (1)

Publication Number Publication Date
IN2012DE01202A true IN2012DE01202A (cs) 2015-10-16

Family

ID=49379542

Family Applications (1)

Application Number Title Priority Date Filing Date
IN1202DE2012 IN2012DE01202A (cs) 2012-04-18 2012-04-18

Country Status (2)

Country Link
US (1) US8791753B2 (cs)
IN (1) IN2012DE01202A (cs)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10084983B2 (en) * 2014-04-29 2018-09-25 Fermi Research Alliance, Llc Wafer-scale pixelated detector system
US20180121011A1 (en) * 2016-10-31 2018-05-03 iGlass Technology, Inc. Electrochromic touchscreen device
KR20220094875A (ko) * 2020-12-29 2022-07-06 엘지디스플레이 주식회사 터치 센서 내장형 표시장치와 그 구동방법
US20240322773A1 (en) * 2023-03-23 2024-09-26 Microchip Technology Incorporated Multi-stage, fully-differential class-ab amplifier

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3868580A (en) 1973-02-12 1975-02-25 Tektronix Inc Bootstrapped amplifier
JPS6081685A (ja) * 1983-10-11 1985-05-09 Toshiba Corp オ−ト・ゼロ積分器
US6140871A (en) 1999-03-26 2000-10-31 National Semiconductor Corporation Switched capacitor amplifier circuit having bus precharge capability and method
JP3984808B2 (ja) 2000-09-07 2007-10-03 キヤノン株式会社 信号処理装置及びそれを用いた撮像装置並びに放射線撮像システム
CN101095232B (zh) 2003-07-16 2010-12-08 Nxp股份有限公司 防止负电压摆动的输入级
US6891414B1 (en) * 2004-03-05 2005-05-10 Rf Micro Devices, Inc. Digital calibration for capacitor voltage non-linearity
US8299844B2 (en) * 2005-09-29 2012-10-30 Case Western Reserve University System and circuitry to provide stable transconductance for biasing
JP4237174B2 (ja) 2005-10-31 2009-03-11 Ｎｅｃエレクトロニクス株式会社 演算増幅器、積分回路、帰還増幅器及び帰還増幅器の制御方法
JP4744325B2 (ja) 2006-03-02 2011-08-10 ルネサスエレクトロニクス株式会社 信号増幅器
JP2009159508A (ja) 2007-12-27 2009-07-16 Nec Electronics Corp 演算増幅器及び積分回路
US20120013351A1 (en) 2008-09-19 2012-01-19 Physical Logic Ag Method for converting a sensor capacitance under parasitic capacitance conditions and a capacitance-to-voltage converter circuit
TWI381173B (zh) 2008-10-29 2013-01-01 Raydium Semiconductor Corp 電容量測電路及其電容量測方法
KR101511162B1 (ko) 2008-12-01 2015-04-13 삼성전자주식회사 다중접촉 감지회로
US8018238B2 (en) 2009-03-27 2011-09-13 Texas Instruments Incorporated Embedded sar based active gain capacitance measurement system and method
US7936299B2 (en) 2009-06-30 2011-05-03 General Electric Company Capacitive integrate and fold charge-to-digital converter
KR20110112128A (ko) 2010-04-06 2011-10-12 삼성전자주식회사 터치 패널의 기생 커패시턴스 보상 방법 및 장치
US8624870B2 (en) * 2010-04-22 2014-01-07 Maxim Integrated Products, Inc. System for and method of transferring charge to convert capacitance to voltage for touchscreen controllers
EP2428774B1 (en) * 2010-09-14 2013-05-29 Stichting IMEC Nederland Readout system for MEMs-based capacitive accelerometers and strain sensors, and method for reading
US9762234B2 (en) 2011-02-10 2017-09-12 Synaptics Incorporated Input device interference determination

Also Published As

Publication number Publication date
US8791753B2 (en) 2014-07-29
US20130278334A1 (en) 2013-10-24

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