IN2012DE01202A - - Google Patents

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Publication number
IN2012DE01202A
IN2012DE01202A IN1202DE2012A IN2012DE01202A IN 2012DE01202 A IN2012DE01202 A IN 2012DE01202A IN 1202DE2012 A IN1202DE2012 A IN 1202DE2012A IN 2012DE01202 A IN2012DE01202 A IN 2012DE01202A
Authority
IN
India
Prior art keywords
capacitance
charge
voltage
integrating
convert
Prior art date
Application number
Inventor
Saravanan Vm
Baldwin Gerard
Walsh Paul
Hosseini Kaveh
Original Assignee
Cypress Semiconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cypress Semiconductor Corp filed Critical Cypress Semiconductor Corp
Priority to IN1202DE2012 priority Critical patent/IN2012DE01202A/en
Priority to US13/591,136 priority patent/US8791753B2/en
Publication of IN2012DE01202A publication Critical patent/IN2012DE01202A/en

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/30Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor
    • H03F3/3001Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor with field-effect transistors
    • H03F3/3022CMOS common source output SEPP amplifiers
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45Differential amplifiers
    • H03F3/45071Differential amplifiers with semiconductor devices only
    • H03F3/45076Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
    • H03F3/45183Long tailed pairs
    • H03F3/45192Folded cascode stages
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45Differential amplifiers
    • H03F3/45071Differential amplifiers with semiconductor devices only
    • H03F3/45076Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45475Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using IC blocks as the active amplifying circuit
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2203/00Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45Indexing scheme relating to differential amplifiers
    • H03F2203/45514Indexing scheme relating to differential amplifiers the FBC comprising one or more switched capacitors, and being coupled between the LC and the IC
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2203/00Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45Indexing scheme relating to differential amplifiers
    • H03F2203/45536Indexing scheme relating to differential amplifiers the FBC comprising a switch and being coupled between the LC and the IC

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)

Abstract

One way to sense a capacitance is to convert it to charge and measure the charge quantity. Charge and capacitance are related by Q=CV where Q=charge, C=capacitance and V=voltage. The G3, G4 and G5 capacitance sense solutions convert the capacitance into charge by modulating the voltage across it and integrating the resulting current. On G4 this used an integration capacitor with two capacitors in feedback where one capacitor is always integrating while the second can be reset in parallel (see CD10109).
IN1202DE2012 2012-04-18 2012-04-18 IN2012DE01202A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
IN1202DE2012 IN2012DE01202A (en) 2012-04-18 2012-04-18
US13/591,136 US8791753B2 (en) 2012-04-18 2012-08-21 Slew rate and bandwidth enhancement in reset

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IN1202DE2012 IN2012DE01202A (en) 2012-04-18 2012-04-18

Publications (1)

Publication Number Publication Date
IN2012DE01202A true IN2012DE01202A (en) 2015-10-16

Family

ID=49379542

Family Applications (1)

Application Number Title Priority Date Filing Date
IN1202DE2012 IN2012DE01202A (en) 2012-04-18 2012-04-18

Country Status (2)

Country Link
US (1) US8791753B2 (en)
IN (1) IN2012DE01202A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10084983B2 (en) * 2014-04-29 2018-09-25 Fermi Research Alliance, Llc Wafer-scale pixelated detector system
US20180121011A1 (en) * 2016-10-31 2018-05-03 iGlass Technology, Inc. Electrochromic touchscreen device

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3868580A (en) 1973-02-12 1975-02-25 Tektronix Inc Bootstrapped amplifier
JPS6081685A (en) * 1983-10-11 1985-05-09 Toshiba Corp Auto zero integrator
US6140871A (en) 1999-03-26 2000-10-31 National Semiconductor Corporation Switched capacitor amplifier circuit having bus precharge capability and method
JP3984808B2 (en) 2000-09-07 2007-10-03 キヤノン株式会社 Signal processing apparatus, imaging apparatus using the same, and radiation imaging system
CN101095232B (en) 2003-07-16 2010-12-08 Nxp股份有限公司 Input stage resistant against negative voltage swings
US6891414B1 (en) * 2004-03-05 2005-05-10 Rf Micro Devices, Inc. Digital calibration for capacitor voltage non-linearity
US8299844B2 (en) * 2005-09-29 2012-10-30 Case Western Reserve University System and circuitry to provide stable transconductance for biasing
JP4237174B2 (en) 2005-10-31 2009-03-11 Necエレクトロニクス株式会社 Operational amplifier, integrating circuit, feedback amplifier, and control method of feedback amplifier
JP4744325B2 (en) 2006-03-02 2011-08-10 ルネサスエレクトロニクス株式会社 Signal amplifier
JP2009159508A (en) 2007-12-27 2009-07-16 Nec Electronics Corp Operational amplifier and integrating circuit
WO2010033078A1 (en) 2008-09-19 2010-03-25 Agency For Science, Technology And Research A method for converting a sensor capacitance under parasitic capacitance conditions and a capacitance-to-voltage converter circuit
TWI381173B (en) 2008-10-29 2013-01-01 Raydium Semiconductor Corp Capacitance measurement circuit and capacitance measurement method thereof
KR101511162B1 (en) 2008-12-01 2015-04-13 삼성전자주식회사 Multi touch sensing circuit
US8018238B2 (en) 2009-03-27 2011-09-13 Texas Instruments Incorporated Embedded sar based active gain capacitance measurement system and method
US7936299B2 (en) 2009-06-30 2011-05-03 General Electric Company Capacitive integrate and fold charge-to-digital converter
KR20110112128A (en) 2010-04-06 2011-10-12 삼성전자주식회사 Method and apparatus for parasitic capacitance compensation in touch panel
US8624870B2 (en) * 2010-04-22 2014-01-07 Maxim Integrated Products, Inc. System for and method of transferring charge to convert capacitance to voltage for touchscreen controllers
EP2428774B1 (en) * 2010-09-14 2013-05-29 Stichting IMEC Nederland Readout system for MEMs-based capacitive accelerometers and strain sensors, and method for reading
US9762234B2 (en) 2011-02-10 2017-09-12 Synaptics Incorporated Input device interference determination

Also Published As

Publication number Publication date
US20130278334A1 (en) 2013-10-24
US8791753B2 (en) 2014-07-29

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