IN2012DE00981A - - Google Patents
Download PDFInfo
- Publication number
- IN2012DE00981A IN2012DE00981A IN981DE2012A IN2012DE00981A IN 2012DE00981 A IN2012DE00981 A IN 2012DE00981A IN 981DE2012 A IN981DE2012 A IN 981DE2012A IN 2012DE00981 A IN2012DE00981 A IN 2012DE00981A
- Authority
- IN
- India
- Prior art keywords
- texture
- lacquer layer
- includes providing
- light management
- substrate
- Prior art date
Links
- 239000004922 lacquer Substances 0.000 abstract 8
- 238000000034 method Methods 0.000 abstract 6
- 239000000758 substrate Substances 0.000 abstract 5
- 230000010076 replication Effects 0.000 abstract 3
- 238000005530 etching Methods 0.000 abstract 2
- 238000004519 manufacturing process Methods 0.000 abstract 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 230000005693 optoelectronics Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/70—Surface textures, e.g. pyramid structures
- H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/138—Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes
- H10F71/1385—Etching transparent electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
- H10F77/148—Shapes of potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
- H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
- H10F77/166—Amorphous semiconductors
- H10F77/1662—Amorphous semiconductors including only Group IV materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/70—Surface textures, e.g. pyramid structures
- H10F77/707—Surface textures, e.g. pyramid structures of the substrates or of layers on substrates, e.g. textured ITO layer on a glass substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Landscapes
- Photovoltaic Devices (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IN981DE2012 IN2012DE00981A (enExample) | 2012-03-30 | 2012-03-30 | |
| EP13161322.6A EP2645420A3 (en) | 2012-03-30 | 2013-03-27 | Modification and optimization of a light management layer for thin film solar cells |
| US13/852,066 US20130295713A1 (en) | 2012-03-30 | 2013-03-28 | Modification and Optimization of a Light Management Area |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IN981DE2012 IN2012DE00981A (enExample) | 2012-03-30 | 2012-03-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IN2012DE00981A true IN2012DE00981A (enExample) | 2015-09-11 |
Family
ID=47998269
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IN981DE2012 IN2012DE00981A (enExample) | 2012-03-30 | 2012-03-30 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US20130295713A1 (enExample) |
| EP (1) | EP2645420A3 (enExample) |
| IN (1) | IN2012DE00981A (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9460019B2 (en) * | 2014-06-26 | 2016-10-04 | Intel Corporation | Sending packets using optimized PIO write sequences without SFENCEs |
| CN112635591A (zh) * | 2020-12-22 | 2021-04-09 | 泰州隆基乐叶光伏科技有限公司 | 一种太阳能电池的制备方法以及太阳能电池 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090266415A1 (en) * | 2006-06-27 | 2009-10-29 | Liquidia Technologies , Inc. | Nanostructures and materials for photovoltaic devices |
| KR101494153B1 (ko) * | 2007-12-21 | 2015-02-23 | 주성엔지니어링(주) | 박막형 태양전지 및 그 제조방법 |
| US20100258163A1 (en) * | 2009-04-14 | 2010-10-14 | Honeywell International Inc. | Thin-film photovoltaics |
| TWI458126B (zh) * | 2009-12-10 | 2014-10-21 | Nat Inst Chung Shan Science & Technology | 以奈米壓印形成發光元件之薄膜結構的製造方法 |
| KR20120112004A (ko) * | 2011-03-31 | 2012-10-11 | 모저 베어 인디아 엘티디 | 전기 그리드선을 고정하기 위한 래커층 패터닝 방법 |
| JP2012222346A (ja) * | 2011-04-08 | 2012-11-12 | Moser Baer India Ltd | ラッカー層上に電気グリッド線を転写する方法 |
| IN2012DE00891A (enExample) * | 2012-03-27 | 2015-09-11 | Moser Baer India Ltd |
-
2012
- 2012-03-30 IN IN981DE2012 patent/IN2012DE00981A/en unknown
-
2013
- 2013-03-27 EP EP13161322.6A patent/EP2645420A3/en not_active Withdrawn
- 2013-03-28 US US13/852,066 patent/US20130295713A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| EP2645420A3 (en) | 2014-06-18 |
| EP2645420A2 (en) | 2013-10-02 |
| US20130295713A1 (en) | 2013-11-07 |
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