IN2012DE00981A - - Google Patents

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Publication number
IN2012DE00981A
IN2012DE00981A IN981DE2012A IN2012DE00981A IN 2012DE00981 A IN2012DE00981 A IN 2012DE00981A IN 981DE2012 A IN981DE2012 A IN 981DE2012A IN 2012DE00981 A IN2012DE00981 A IN 2012DE00981A
Authority
IN
India
Prior art keywords
texture
lacquer layer
includes providing
light management
substrate
Prior art date
Application number
Inventor
Jos Rutten
Rob Van Erven
Original Assignee
Moser Baer India Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Moser Baer India Ltd filed Critical Moser Baer India Ltd
Priority to IN981DE2012 priority Critical patent/IN2012DE00981A/en
Priority to EP13161322.6A priority patent/EP2645420A3/en
Priority to US13/852,066 priority patent/US20130295713A1/en
Publication of IN2012DE00981A publication Critical patent/IN2012DE00981A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/03529—Shape of the potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0376—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors
    • H01L31/03762—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors including only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
    • H01L31/1888—Manufacture of transparent electrodes, e.g. TCO, ITO methods for etching transparent electrodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)

Abstract

A method for manufacturing an optoelectronic device is provided. The method includes providing a substrate. Thereafter, the method includes providing a lacquer layer on the substrate. The method further includes providing light management texture in the lacquer layer. Providing light management texture in the lacquer layer includes providing a replication substrate having a negative texture and imprinting the negative texture into the lacquer layer using the replication substrate, such that the light management texture is created in the lacquer layer. Furthermore, the method includes providing a first electrode layer on the lacquer layer. The method further includes etching, prior to deposition of first electrode layer, to enable formation of less steep light management texture in the lacquer layer and subsequently less steep texture on first electrode layer by etching at least one of the textures in the production of the negative texture on the replication substrate, or the light management texture on the lacquer layer itself.
IN981DE2012 2012-03-30 2012-03-30 IN2012DE00981A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
IN981DE2012 IN2012DE00981A (en) 2012-03-30 2012-03-30
EP13161322.6A EP2645420A3 (en) 2012-03-30 2013-03-27 Modification and optimization of a light management layer for thin film solar cells
US13/852,066 US20130295713A1 (en) 2012-03-30 2013-03-28 Modification and Optimization of a Light Management Area

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IN981DE2012 IN2012DE00981A (en) 2012-03-30 2012-03-30

Publications (1)

Publication Number Publication Date
IN2012DE00981A true IN2012DE00981A (en) 2015-09-11

Family

ID=47998269

Family Applications (1)

Application Number Title Priority Date Filing Date
IN981DE2012 IN2012DE00981A (en) 2012-03-30 2012-03-30

Country Status (3)

Country Link
US (1) US20130295713A1 (en)
EP (1) EP2645420A3 (en)
IN (1) IN2012DE00981A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9460019B2 (en) * 2014-06-26 2016-10-04 Intel Corporation Sending packets using optimized PIO write sequences without SFENCEs
CN112635591A (en) * 2020-12-22 2021-04-09 泰州隆基乐叶光伏科技有限公司 Preparation method of solar cell and solar cell

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090266415A1 (en) * 2006-06-27 2009-10-29 Liquidia Technologies , Inc. Nanostructures and materials for photovoltaic devices
KR101494153B1 (en) * 2007-12-21 2015-02-23 주성엔지니어링(주) Thin film type Solar Cell and Method for manufacturing the same
US20100258163A1 (en) * 2009-04-14 2010-10-14 Honeywell International Inc. Thin-film photovoltaics
TWI458126B (en) * 2009-12-10 2014-10-21 Nat Inst Chung Shan Science & Technology Method for forming thin-film structure of light-emitting device by nanoimprint
KR20120112004A (en) * 2011-03-31 2012-10-11 모저 베어 인디아 엘티디 Method for patterning a lacquer layer to hold electrical gridlines
JP2012222346A (en) * 2011-04-08 2012-11-12 Moser Baer India Ltd Method for transferring electrical gridlines on lacquer layer
IN2012DE00891A (en) * 2012-03-27 2015-09-11 Moser Baer India Ltd

Also Published As

Publication number Publication date
EP2645420A3 (en) 2014-06-18
EP2645420A2 (en) 2013-10-02
US20130295713A1 (en) 2013-11-07

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