IN192035B - - Google Patents

Info

Publication number
IN192035B
IN192035B IN1496CA1997A IN192035B IN 192035 B IN192035 B IN 192035B IN 1496CA1997 A IN1496CA1997 A IN 1496CA1997A IN 192035 B IN192035 B IN 192035B
Authority
IN
India
Application number
Other languages
English (en)
Inventor
Walter Hartner
Guenther Dr Schindler
Carlos Mazure Dr Espejo
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of IN192035B publication Critical patent/IN192035B/en

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/834Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET] comprising FinFETs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B53/00Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B69/00Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01Manufacture or treatment
    • H10D84/0123Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0144Manufacturing their gate insulating layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/072Connecting or disconnecting of bump connectors
    • H10W72/07221Aligning
    • H10W72/07227Aligning involving guiding structures, e.g. spacers or supporting members
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/072Connecting or disconnecting of bump connectors
    • H10W72/07231Techniques
    • H10W72/07236Soldering or alloying
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/20Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/281Auxiliary members
    • H10W72/285Alignment aids, e.g. alignment marks
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL
IN1496CA1997 1996-09-30 1997-08-12 IN192035B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19640213A DE19640213C1 (de) 1996-09-30 1996-09-30 Speicheranordnung mit selbstjustierender nicht integrierter Kondensatoranordnung

Publications (1)

Publication Number Publication Date
IN192035B true IN192035B (it) 2004-02-14

Family

ID=7807379

Family Applications (1)

Application Number Title Priority Date Filing Date
IN1496CA1997 IN192035B (it) 1996-09-30 1997-08-12

Country Status (9)

Country Link
US (1) US6097050A (it)
EP (1) EP0931337A1 (it)
JP (1) JP3280988B2 (it)
KR (1) KR100414237B1 (it)
CN (1) CN1158700C (it)
DE (1) DE19640213C1 (it)
IN (1) IN192035B (it)
TW (1) TW369695B (it)
WO (1) WO1998014996A1 (it)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999036957A1 (en) * 1998-01-19 1999-07-22 Citizen Watch Co., Ltd. Semiconductor package
WO2004100266A1 (ja) 2003-05-09 2004-11-18 Matsushita Electric Industrial Co., Ltd. 不揮発性メモリおよびその製造方法
KR100778227B1 (ko) 2006-08-23 2007-11-20 동부일렉트로닉스 주식회사 반도체 소자 및 그 제조방법
KR100852603B1 (ko) * 2006-12-27 2008-08-14 동부일렉트로닉스 주식회사 반도체소자 및 그 제조방법
JP5585167B2 (ja) * 2010-03-30 2014-09-10 富士通株式会社 電子デバイス及び電子デバイスの製造方法
WO2022067587A1 (zh) * 2020-09-29 2022-04-07 华为技术有限公司 三维存储器及其制备方法、电子设备

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4912545A (en) 1987-09-16 1990-03-27 Irvine Sensors Corporation Bonding of aligned conductive bumps on adjacent surfaces
JP2788265B2 (ja) * 1988-07-08 1998-08-20 オリンパス光学工業株式会社 強誘電体メモリ及びその駆動方法,製造方法
DE3824008A1 (de) * 1988-07-15 1990-01-25 Contraves Ag Elektronische schaltung sowie verfahren zu deren herstellung
US5406701A (en) * 1992-10-02 1995-04-18 Irvine Sensors Corporation Fabrication of dense parallel solder bump connections
US5335138A (en) * 1993-02-12 1994-08-02 Micron Semiconductor, Inc. High dielectric constant capacitor and method of manufacture
KR960009074A (ko) * 1994-08-29 1996-03-22 모리시다 요이치 반도체 장치 및 그 제조방법

Also Published As

Publication number Publication date
TW369695B (en) 1999-09-11
CN1231761A (zh) 1999-10-13
WO1998014996A1 (de) 1998-04-09
JP3280988B2 (ja) 2002-05-13
JP2001501370A (ja) 2001-01-30
DE19640213C1 (de) 1998-03-05
KR20000048721A (ko) 2000-07-25
US6097050A (en) 2000-08-01
EP0931337A1 (de) 1999-07-28
KR100414237B1 (ko) 2004-01-13
CN1158700C (zh) 2004-07-21

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