IN161924B - - Google Patents
Info
- Publication number
- IN161924B IN161924B IN679/CAL/85A IN679CA1985A IN161924B IN 161924 B IN161924 B IN 161924B IN 679CA1985 A IN679CA1985 A IN 679CA1985A IN 161924 B IN161924 B IN 161924B
- Authority
- IN
- India
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
- C30B15/12—Double crucible methods
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Recrystallisation Techniques (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US66606684A | 1984-10-29 | 1984-10-29 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IN161924B true IN161924B (pm) | 1988-02-27 |
Family
ID=24672685
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IN679/CAL/85A IN161924B (pm) | 1984-10-29 | 1985-09-25 |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPH0784358B2 (pm) |
| DE (1) | DE3534807A1 (pm) |
| FR (1) | FR2572424B1 (pm) |
| GB (1) | GB2166062B (pm) |
| IN (1) | IN161924B (pm) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2198966A (en) * | 1986-12-09 | 1988-06-29 | Westinghouse Electric Corp | Method of growing silicon dendritic-web crystals |
| IN168114B (pm) * | 1986-12-18 | 1991-02-09 | Westinghouse Electric Corp | |
| US4747774A (en) * | 1987-02-09 | 1988-05-31 | Westinghouse Electric Corp. | Conforming crucible/susceptor system for silicon crystal growth |
| DE3733487C2 (de) * | 1987-10-03 | 1997-08-14 | Leybold Ag | Vorrichtung zum Ziehen von Einkristallen |
| DE3840445C2 (de) * | 1987-12-03 | 1996-08-14 | Toshiba Ceramics Co | Vorrichtung und Verfahren zum Ziehen eines Einkristalls |
| US4919901A (en) * | 1987-12-31 | 1990-04-24 | Westinghouse Electric Corp. | Barrier design for crucibles for silicon dendritic web growth |
| EP0340941A1 (en) * | 1988-04-28 | 1989-11-08 | Nkk Corporation | Method and apparatus for manufacturing silicon single crystals |
| JPH035392A (ja) * | 1989-05-30 | 1991-01-11 | Nkk Corp | シリコン単結晶の製造装置 |
| AU632886B2 (en) * | 1990-01-25 | 1993-01-14 | Ebara Corporation | Melt replenishment system for dendritic web growth |
| JP2585123B2 (ja) * | 1990-04-13 | 1997-02-26 | 東芝セラミックス株式会社 | シリコン単結晶の製造方法 |
| BR9203110A (pt) | 1992-08-12 | 1994-03-01 | Petroleo Brasileiro Sa | Composicao catalitica passivadora para o craqueamento de hidrocarbonetos,alumina e processo de craqueamento catalitico fluido |
| JP2010208869A (ja) * | 2009-03-06 | 2010-09-24 | Sharp Corp | 多結晶体または単結晶体の製造装置および製造方法 |
| JP5923700B1 (ja) * | 2015-11-30 | 2016-05-25 | 並木精密宝石株式会社 | 大型ｅｆｇ法用育成炉の蓋体構造 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2152801A1 (de) * | 1970-11-09 | 1972-05-10 | Little Inc A | Verfahren und Ofen zum Ziehen von Kristallen gleichförmiger Zusammensetzung nach dem Czochralski-Verfahren |
| US4036595A (en) * | 1975-11-06 | 1977-07-19 | Siltec Corporation | Continuous crystal growing furnace |
| JPS5373481A (en) * | 1976-12-13 | 1978-06-29 | Nippon Telegr & Teleph Corp <Ntt> | Continuous preparation apparatus for sheet crystal |
| US4389377A (en) * | 1981-07-10 | 1983-06-21 | The United States Of America As Represented By The United States Department Of Energy | Apparatus for growing a dendritic web |
| JPS58130195A (ja) * | 1982-01-27 | 1983-08-03 | Toshiba Ceramics Co Ltd | 単結晶シリコン引上装置 |
-
1985
- 1985-09-25 IN IN679/CAL/85A patent/IN161924B/en unknown
- 1985-09-30 DE DE19853534807 patent/DE3534807A1/de not_active Ceased
- 1985-10-02 GB GB08524260A patent/GB2166062B/en not_active Expired
- 1985-10-09 FR FR8514957A patent/FR2572424B1/fr not_active Expired - Lifetime
- 1985-10-28 JP JP60242559A patent/JPH0784358B2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| FR2572424A1 (fr) | 1986-05-02 |
| GB2166062B (en) | 1988-02-17 |
| FR2572424B1 (fr) | 1991-01-11 |
| GB8524260D0 (en) | 1985-11-06 |
| JPS61174188A (ja) | 1986-08-05 |
| JPH0784358B2 (ja) | 1995-09-13 |
| DE3534807A1 (de) | 1986-06-05 |
| GB2166062A (en) | 1986-04-30 |