IN160220B - - Google Patents

Info

Publication number
IN160220B
IN160220B IN721/DEL/83A IN721DE1983A IN160220B IN 160220 B IN160220 B IN 160220B IN 721DE1983 A IN721DE1983 A IN 721DE1983A IN 160220 B IN160220 B IN 160220B
Authority
IN
India
Application number
IN721/DEL/83A
Other languages
English (en)
Inventor
Masatsugu Izu
Vincent David Cannella
Original Assignee
Energy Conversion Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Energy Conversion Devices Inc filed Critical Energy Conversion Devices Inc
Publication of IN160220B publication Critical patent/IN160220B/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0224Electrodes
    • H01L31/022466Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/50Testing of electric apparatus, lines, cables or components for short-circuits, continuity, leakage current or incorrect line connections
    • G01R31/52Testing for short-circuits, leakage current or ground faults
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0224Electrodes
    • H01L31/022466Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H01L31/022475Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of indium tin oxide [ITO]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/206Particular processes or apparatus for continuous treatment of the devices, e.g. roll-to roll processes, multi-chamber deposition
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/208Particular post-treatment of the devices, e.g. annealing, short-circuit elimination
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02SGENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
    • H02S50/00Monitoring or testing of PV systems, e.g. load balancing or fault identification
    • H02S50/10Testing of PV devices, e.g. of PV modules or single PV cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S136/00Batteries: thermoelectric and photoelectric
    • Y10S136/29Testing, calibrating, treating, e.g. aging

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)
  • Weting (AREA)
IN721/DEL/83A 1982-10-21 1983-10-29 IN160220B (el)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/435,890 US4451970A (en) 1982-10-21 1982-10-21 System and method for eliminating short circuit current paths in photovoltaic devices

Publications (1)

Publication Number Publication Date
IN160220B true IN160220B (el) 1987-07-04

Family

ID=23730241

Family Applications (1)

Application Number Title Priority Date Filing Date
IN721/DEL/83A IN160220B (el) 1982-10-21 1983-10-29

Country Status (11)

Country Link
US (1) US4451970A (el)
EP (1) EP0139795B1 (el)
JP (1) JPS5994473A (el)
KR (1) KR840006566A (el)
AU (1) AU2042083A (el)
BR (1) BR8305791A (el)
CA (1) CA1209233A (el)
DE (1) DE3381369D1 (el)
ES (2) ES526596A0 (el)
IN (1) IN160220B (el)
MX (1) MX159161A (el)

Families Citing this family (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4640002A (en) * 1982-02-25 1987-02-03 The University Of Delaware Method and apparatus for increasing the durability and yield of thin film photovoltaic devices
JPS60254626A (ja) * 1984-05-30 1985-12-16 Sharp Corp ウエハテスト方法
JPH0673988B2 (ja) * 1984-08-14 1994-09-21 株式会社リコー 多色感熱記録方法
US4590327A (en) * 1984-09-24 1986-05-20 Energy Conversion Devices, Inc. Photovoltaic device and method
US4567642A (en) * 1984-09-28 1986-02-04 The Standard Oil Company Method of making photovoltaic modules
US4630355A (en) * 1985-03-08 1986-12-23 Energy Conversion Devices, Inc. Electric circuits having repairable circuit lines and method of making the same
JPS6258685A (ja) * 1985-09-09 1987-03-14 Fuji Electric Co Ltd 非晶質半導体太陽電池の製造方法
CA1321660C (en) * 1985-11-05 1993-08-24 Hideo Yamagishi Amorphous-containing semiconductor device with high resistivity interlayer or with highly doped interlayer
KR900006772B1 (ko) * 1985-11-06 1990-09-21 세미콘닥터 에너지 라보라토리 컴파니 리미티드 반도체층을 통한 전기적 단락이 없는 반도체 장치와 그 제조방법
AU580903B2 (en) * 1986-01-29 1989-02-02 Semiconductor Energy Laboratory Co. Ltd. Method for manufacturing photoelectric conversion devices
US4729970A (en) * 1986-09-15 1988-03-08 Energy Conversion Devices, Inc. Conversion process for passivating short circuit current paths in semiconductor devices
JPS63210630A (ja) * 1987-02-26 1988-09-01 Kanegafuchi Chem Ind Co Ltd 平面光検出装置
US4773944A (en) * 1987-09-08 1988-09-27 Energy Conversion Devices, Inc. Large area, low voltage, high current photovoltaic modules and method of fabricating same
US5055416A (en) * 1988-12-07 1991-10-08 Minnesota Mining And Manufacturing Company Electrolytic etch for preventing electrical shorts in solar cells on polymer surfaces
US5320723A (en) * 1990-05-07 1994-06-14 Canon Kabushiki Kaisha Method of removing short-circuit portion in photoelectric conversion device
JPH04266068A (ja) * 1991-02-20 1992-09-22 Canon Inc 光電変換素子及びその製造方法
JP2686022B2 (ja) * 1992-07-01 1997-12-08 キヤノン株式会社 光起電力素子の製造方法
JPH096683A (ja) * 1995-06-19 1997-01-10 Nec Corp 情報保持機能付きメモリ装置
US5769963A (en) * 1995-08-31 1998-06-23 Canon Kabushiki Kaisha Photovoltaic device
NL1013204C2 (nl) 1999-10-04 2001-04-05 Stichting Energie Inrichting voor het lokaliseren van productiefouten in een fotovolta´sch element.
JP2002231984A (ja) 2001-02-01 2002-08-16 Canon Inc 透明導電膜の成膜方法、半導体層の欠陥領域補償方法、光起電力素子、及びその製造方法
US6423595B1 (en) 2001-04-19 2002-07-23 United Solar Systems Corporation Method for scribing a semiconductor device
AU2003295880A1 (en) * 2002-11-27 2004-06-23 University Of Toledo, The Integrated photoelectrochemical cell and system having a liquid electrolyte
JP2004241618A (ja) * 2003-02-06 2004-08-26 Canon Inc 光起電力素子の製造方法
US7667133B2 (en) * 2003-10-29 2010-02-23 The University Of Toledo Hybrid window layer for photovoltaic cells
WO2005101510A2 (en) * 2004-04-16 2005-10-27 The University Of Toledo Light-assisted electrochemical shunt passivation for photovoltaic devices
US7592975B2 (en) * 2004-08-27 2009-09-22 Semiconductor Energy Laboratory Co., Ltd. Display device and driving method thereof
WO2006110613A2 (en) * 2005-04-11 2006-10-19 The University Of Toledo Integrated photovoltaic-electrolysis cell
WO2009073501A2 (en) * 2007-11-30 2009-06-11 University Of Toledo System for diagnosis and treatment of photovoltaic and other semiconductor devices
US8129613B2 (en) * 2008-02-05 2012-03-06 Twin Creeks Technologies, Inc. Photovoltaic cell comprising a thin lamina having low base resistivity and method of making
US7989729B1 (en) 2008-03-11 2011-08-02 Kla-Tencor Corporation Detecting and repairing defects of photovoltaic devices
US7733111B1 (en) 2008-03-11 2010-06-08 Kla-Tencor Corporation Segmented optical and electrical testing for photovoltaic devices
WO2009120974A2 (en) * 2008-03-28 2009-10-01 University Of Toledo System for selectively filling pin holes, weak shunts and/or scribe lines in photovoltaic devices and photovoltaic cells made thereby
US20100031995A1 (en) * 2008-08-10 2010-02-11 Twin Creeks Technologies, Inc. Photovoltaic module comprising thin laminae configured to mitigate efficiency loss due to shunt formation
US20100032010A1 (en) * 2008-08-10 2010-02-11 Twin Creeks Technologies, Inc. Method to mitigate shunt formation in a photovoltaic cell comprising a thin lamina
US8338209B2 (en) * 2008-08-10 2012-12-25 Twin Creeks Technologies, Inc. Photovoltaic cell comprising a thin lamina having a rear junction and method of making
US8318240B2 (en) * 2008-11-17 2012-11-27 Solopower, Inc. Method and apparatus to remove a segment of a thin film solar cell structure for efficiency improvement
US7979969B2 (en) * 2008-11-17 2011-07-19 Solopower, Inc. Method of detecting and passivating a defect in a solar cell
JP5350885B2 (ja) * 2009-05-19 2013-11-27 株式会社エヌエフ回路設計ブロック 電極の分離状態検査方法、その装置及び電子デバイスの製造方法
JP2013084751A (ja) * 2011-10-07 2013-05-09 Sharp Corp 光起電力素子の欠陥修復方法および欠陥修復装置
US9564270B2 (en) 2013-12-27 2017-02-07 Tdk Corporation Thin film capacitor
CN108054278B (zh) * 2017-11-23 2021-01-15 华中科技大学 一种高良率有机太阳能电池及其制备方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4180439A (en) * 1976-03-15 1979-12-25 International Business Machines Corporation Anodic etching method for the detection of electrically active defects in silicon
US4197141A (en) * 1978-01-31 1980-04-08 Massachusetts Institute Of Technology Method for passivating imperfections in semiconductor materials
US4251286A (en) * 1979-09-18 1981-02-17 The University Of Delaware Thin film photovoltaic cells having blocking layers
JPS5946426B2 (ja) * 1979-11-13 1984-11-12 富士電機株式会社 太陽電池の製造方法
JPS5669872A (en) * 1979-11-13 1981-06-11 Fuji Electric Co Ltd Manufacture of solar cell
US4385971A (en) * 1981-06-26 1983-05-31 Rca Corporation Electrolytic etch for eliminating shorts and shunts in large area amorphous silicon solar cells

Also Published As

Publication number Publication date
ES8502290A1 (es) 1984-12-16
AU2042083A (en) 1984-05-03
ES8601567A1 (es) 1985-10-16
US4451970A (en) 1984-06-05
EP0139795B1 (en) 1990-03-21
MX159161A (es) 1989-04-26
JPH0566752B2 (el) 1993-09-22
EP0139795A2 (en) 1985-05-08
DE3381369D1 (de) 1990-04-26
BR8305791A (pt) 1984-05-29
JPS5994473A (ja) 1984-05-31
CA1209233A (en) 1986-08-05
ES526596A0 (es) 1984-12-16
ES535567A0 (es) 1985-10-16
KR840006566A (ko) 1984-11-30
EP0139795A3 (en) 1986-05-28

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