IL99412A - Plural-wavelength infrared detector devices - Google Patents
Plural-wavelength infrared detector devicesInfo
- Publication number
- IL99412A IL99412A IL9941291A IL9941291A IL99412A IL 99412 A IL99412 A IL 99412A IL 9941291 A IL9941291 A IL 9941291A IL 9941291 A IL9941291 A IL 9941291A IL 99412 A IL99412 A IL 99412A
- Authority
- IL
- Israel
- Prior art keywords
- level
- detector
- wavelength
- junction
- bandgap
- Prior art date
Links
- 239000000463 material Substances 0.000 claims description 73
- 239000000758 substrate Substances 0.000 claims description 39
- 230000004044 response Effects 0.000 claims description 32
- 239000004065 semiconductor Substances 0.000 claims description 31
- 238000001465 metallisation Methods 0.000 claims description 10
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 description 10
- MCMSPRNYOJJPIZ-UHFFFAOYSA-N cadmium;mercury;tellurium Chemical compound [Cd]=[Te]=[Hg] MCMSPRNYOJJPIZ-UHFFFAOYSA-N 0.000 description 10
- 239000010410 layer Substances 0.000 description 9
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 230000005855 radiation Effects 0.000 description 4
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 238000003491 array Methods 0.000 description 3
- 229920006332 epoxy adhesive Polymers 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 2
- 239000005083 Zinc sulfide Substances 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000012925 reference material Substances 0.000 description 2
- 238000000992 sputter etching Methods 0.000 description 2
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 2
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- DGJPPCSCQOIWCP-UHFFFAOYSA-N cadmium mercury Chemical compound [Cd].[Hg] DGJPPCSCQOIWCP-UHFFFAOYSA-N 0.000 description 1
- 150000004770 chalcogenides Chemical class 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical compound [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 description 1
- XCAUINMIESBTBL-UHFFFAOYSA-N lead(ii) sulfide Chemical compound [Pb]=S XCAUINMIESBTBL-UHFFFAOYSA-N 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14665—Imagers using a photoconductor layer
- H01L27/14669—Infrared imagers
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Light Receiving Elements (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB9019897A GB2247985A (en) | 1990-09-12 | 1990-09-12 | Plural-wavelength infrared detector devices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IL99412A true IL99412A (en) | 1994-05-30 |
Family
ID=10682057
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IL9941291A IL99412A (en) | 1990-09-12 | 1991-09-05 | Plural-wavelength infrared detector devices |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US5185648A (de) |
| EP (1) | EP0475525B1 (de) |
| JP (1) | JP2744367B2 (de) |
| DE (1) | DE69114421T2 (de) |
| GB (1) | GB2247985A (de) |
| IL (1) | IL99412A (de) |
Families Citing this family (34)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB9204078D0 (en) * | 1992-02-26 | 1992-04-08 | Philips Electronics Uk Ltd | Infrared detector manufacture |
| GB2265253A (en) * | 1992-03-18 | 1993-09-22 | Philips Electronics Uk Ltd | Infrared detector devices and their manufacture using directional etching to define connections |
| DE4234471C1 (de) * | 1992-10-13 | 1994-01-20 | Fraunhofer Ges Forschung | Vorrichtung zur Absorption infraroter Strahlung |
| US5298771A (en) * | 1992-11-09 | 1994-03-29 | Xerox Corporation | Color imaging charge-coupled array with photosensitive layers in potential wells |
| US5378916A (en) * | 1993-02-17 | 1995-01-03 | Xerox Corporation | Color imaging charge-coupled array with multiple photosensitive regions |
| US5591975A (en) * | 1993-09-10 | 1997-01-07 | Santa Barbara Research Center | Optical sensing apparatus for remotely measuring exhaust gas composition of moving motor vehicles |
| FR2713017B1 (fr) * | 1993-11-23 | 1996-01-12 | Commissariat Energie Atomique | Détecteur de rayonnements dans deux bandes de longueurs d'ondes et procédé de fabrication de ce détecteur. |
| US5567975A (en) * | 1994-06-30 | 1996-10-22 | Santa Barbara Research Center | Group II-VI radiation detector for simultaneous visible and IR detection |
| FR2742581B1 (fr) * | 1994-08-30 | 1998-10-30 | Commissariat Energie Atomique | Detecteur infrarouge bicolore a coherence spatio-temporelle planaire |
| WO1997018589A1 (en) * | 1995-11-15 | 1997-05-22 | Lockheed-Martin Ir Imaging Systems, Inc. | A dual-band multi-level microbridge detector |
| US6091127A (en) * | 1997-04-02 | 2000-07-18 | Raytheon Company | Integrated infrared detection system |
| WO1998049734A1 (fr) * | 1997-04-29 | 1998-11-05 | Commissariat A L'energie Atomique | Detecteur infrarouge bicolore a coherence spatio-temporelle planaire |
| US6465860B2 (en) * | 1998-09-01 | 2002-10-15 | Kabushiki Kaisha Toshiba | Multi-wavelength semiconductor image sensor and method of manufacturing the same |
| US6504222B1 (en) * | 1998-12-28 | 2003-01-07 | Fujitsu Limited | Multi-quantum well infrared photo-detector |
| US6750444B2 (en) | 2000-12-29 | 2004-06-15 | Spx Corporation | Apparatus and method for measuring vehicle speed and/or acceleration |
| US6561027B2 (en) | 2000-12-29 | 2003-05-13 | Spx Corporation | Support structure for system for measuring vehicle speed and/or acceleration |
| US6781110B2 (en) * | 2000-12-29 | 2004-08-24 | Spx Corporation | Apparatus and method for measuring vehicle speed and/or acceleration |
| US6745613B2 (en) | 2001-08-13 | 2004-06-08 | Spx Corporation | Method and system for determining the type of fuel used to power a vehicle |
| US6857262B2 (en) | 2001-08-16 | 2005-02-22 | Spx Corporation | Catalytic converter function detection |
| US7183945B2 (en) * | 2001-08-17 | 2007-02-27 | Spx Corporation | Method and system for video capture of vehicle information |
| US20030034889A1 (en) | 2001-08-20 | 2003-02-20 | Rendahl Craig S. | Host system and method for sensed vehicle data |
| US6744516B2 (en) | 2001-08-21 | 2004-06-01 | Spx Corporation | Optical path structure for open path emissions sensing |
| US6757607B2 (en) | 2001-08-23 | 2004-06-29 | Spx Corporation | Audit vehicle and audit method for remote emissions sensing |
| US7196790B2 (en) | 2002-03-18 | 2007-03-27 | Honeywell International Inc. | Multiple wavelength spectrometer |
| JP3675770B2 (ja) | 2002-03-22 | 2005-07-27 | 株式会社東芝 | 熱型赤外線撮像素子 |
| FR2855655B1 (fr) * | 2003-05-26 | 2005-08-19 | Commissariat Energie Atomique | Detecteur de rayonnement infrarouge photovoltaique a grille conductrice independante et tridimensionnelle |
| US7214999B2 (en) * | 2003-10-31 | 2007-05-08 | Motorola, Inc. | Integrated photoserver for CMOS imagers |
| US7531363B2 (en) | 2003-12-30 | 2009-05-12 | Honeywell International Inc. | Particle detection using fluorescence |
| FR2868602B1 (fr) * | 2004-04-05 | 2006-05-26 | Commissariat Energie Atomique | Circuit de detection photonique a structure mesa |
| FR2906082B1 (fr) * | 2006-09-18 | 2008-10-31 | Commissariat Energie Atomique | Photodiode a avalanche |
| US7629582B2 (en) * | 2006-10-24 | 2009-12-08 | Raytheon Company | Dual band imager with visible or SWIR detectors combined with uncooled LWIR detectors |
| FR2924803A1 (fr) * | 2007-12-11 | 2009-06-12 | Commissariat Energie Atomique | Dispositif d'analyse spectroscopique interferentielle |
| US9881966B2 (en) | 2015-07-17 | 2018-01-30 | International Business Machines Corporation | Three-dimensional integrated multispectral imaging sensor |
| US11777043B1 (en) | 2022-06-21 | 2023-10-03 | Globalfoundries U.S. Inc. | Photodetectors with substrate extensions adjacent photodiodes |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4206470A (en) * | 1977-09-01 | 1980-06-03 | Honeywell Inc. | Thin film interconnect for multicolor IR/CCD |
| JPS5762573A (en) * | 1980-10-03 | 1982-04-15 | Fujitsu Ltd | Multiple wavelength photoelectric converter |
| GB2095905B (en) * | 1981-03-27 | 1985-01-16 | Philips Electronic Associated | Infra-red radiation imaging devices and methods for their manufacture |
| GB2116363B (en) * | 1982-03-03 | 1985-10-16 | Philips Electronic Associated | Multi-level infra-red detectors and their manufacture |
| US4720738A (en) * | 1982-09-08 | 1988-01-19 | Texas Instruments Incorporated | Focal plane array structure including a signal processing system |
| US4996579A (en) * | 1983-02-04 | 1991-02-26 | The United States Of America As Represented By The Secretary Of The Navy | Design for electronic spectrally tunable infrared detector |
| JPS59189685A (ja) * | 1983-04-13 | 1984-10-27 | Fujitsu Ltd | 赤外線検知素子 |
| JPS61214462A (ja) * | 1985-03-19 | 1986-09-24 | Nec Corp | 配列型赤外線検知器 |
| US4956686A (en) * | 1986-02-04 | 1990-09-11 | Texas Instruments Incorporated | Two color infrared focal plane array |
| US4639756A (en) * | 1986-05-05 | 1987-01-27 | Santa Barbara Research Center | Graded gap inversion layer photodiode array |
| GB8627886D0 (en) * | 1986-11-21 | 1987-04-15 | Marconi Co Ltd | Cadmium mercury telluride photodiode |
| FR2633101B1 (fr) * | 1988-06-16 | 1992-02-07 | Commissariat Energie Atomique | Photodiode et matrice de photodiodes sur hgcdte et leurs procedes de fabrication |
-
1990
- 1990-09-12 GB GB9019897A patent/GB2247985A/en not_active Withdrawn
-
1991
- 1991-09-05 IL IL9941291A patent/IL99412A/en not_active IP Right Cessation
- 1991-09-06 EP EP91202283A patent/EP0475525B1/de not_active Expired - Lifetime
- 1991-09-06 DE DE69114421T patent/DE69114421T2/de not_active Expired - Fee Related
- 1991-09-10 US US07/757,380 patent/US5185648A/en not_active Expired - Fee Related
- 1991-09-12 JP JP3233345A patent/JP2744367B2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH04234170A (ja) | 1992-08-21 |
| EP0475525B1 (de) | 1995-11-08 |
| JP2744367B2 (ja) | 1998-04-28 |
| EP0475525A1 (de) | 1992-03-18 |
| US5185648A (en) | 1993-02-09 |
| DE69114421D1 (de) | 1995-12-14 |
| GB2247985A (en) | 1992-03-18 |
| DE69114421T2 (de) | 1996-03-21 |
| GB9019897D0 (en) | 1991-02-20 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| KB | Patent renewed | ||
| MM9K | Patent not in force due to non-payment of renewal fees |