IL90456A - Improved fool for solar cell production - Google Patents
Improved fool for solar cell productionInfo
- Publication number
- IL90456A IL90456A IL9045689A IL9045689A IL90456A IL 90456 A IL90456 A IL 90456A IL 9045689 A IL9045689 A IL 9045689A IL 9045689 A IL9045689 A IL 9045689A IL 90456 A IL90456 A IL 90456A
- Authority
- IL
- Israel
- Prior art keywords
- silver
- containing paste
- substrate
- aluminum
- contact
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 55
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 47
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 47
- 239000010703 silicon Substances 0.000 claims abstract description 47
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 44
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 41
- 238000000034 method Methods 0.000 claims abstract description 30
- 239000011521 glass Substances 0.000 claims abstract description 12
- 238000010438 heat treatment Methods 0.000 claims abstract description 9
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 43
- 229910052709 silver Inorganic materials 0.000 claims description 38
- 239000004332 silver Substances 0.000 claims description 38
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 28
- 238000000576 coating method Methods 0.000 claims description 26
- 239000011248 coating agent Substances 0.000 claims description 24
- 229910052782 aluminium Inorganic materials 0.000 claims description 23
- 238000010304 firing Methods 0.000 claims description 16
- 239000005388 borosilicate glass Substances 0.000 claims description 7
- 229910045601 alloy Inorganic materials 0.000 claims description 5
- 239000000956 alloy Substances 0.000 claims description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 239000007787 solid Substances 0.000 claims description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 2
- 239000002245 particle Substances 0.000 claims 3
- 239000002210 silicon-based material Substances 0.000 claims 2
- 239000003795 chemical substances by application Substances 0.000 claims 1
- 238000001816 cooling Methods 0.000 claims 1
- 230000000717 retained effect Effects 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 abstract description 24
- 239000002184 metal Substances 0.000 abstract description 24
- 239000005368 silicate glass Substances 0.000 abstract description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 20
- 229910052759 nickel Inorganic materials 0.000 description 10
- 238000005530 etching Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 description 3
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 229940116411 terpineol Drugs 0.000 description 3
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- 230000001464 adherent effect Effects 0.000 description 2
- 229910052810 boron oxide Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- 238000007669 thermal treatment Methods 0.000 description 2
- VXQBJTKSVGFQOL-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethyl acetate Chemical compound CCCCOCCOCCOC(C)=O VXQBJTKSVGFQOL-UHFFFAOYSA-N 0.000 description 1
- 229910018134 Al-Mg Inorganic materials 0.000 description 1
- 229910018467 Al—Mg Inorganic materials 0.000 description 1
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 1
- 239000001856 Ethyl cellulose Substances 0.000 description 1
- 229910000861 Mg alloy Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910001245 Sb alloy Inorganic materials 0.000 description 1
- SNAAJJQQZSMGQD-UHFFFAOYSA-N aluminum magnesium Chemical compound [Mg].[Al] SNAAJJQQZSMGQD-UHFFFAOYSA-N 0.000 description 1
- 239000012080 ambient air Substances 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 235000019325 ethyl cellulose Nutrition 0.000 description 1
- 229920001249 ethyl cellulose Polymers 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- -1 fluorine ions Chemical class 0.000 description 1
- 229920002313 fluoropolymer Polymers 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910021334 nickel silicide Inorganic materials 0.000 description 1
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000001012 protector Effects 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229940055221 silvera Drugs 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US20530488A | 1988-06-10 | 1988-06-10 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| IL90456A0 IL90456A0 (en) | 1990-01-18 |
| IL90456A true IL90456A (en) | 1996-01-31 |
Family
ID=22761652
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IL9045689A IL90456A (en) | 1988-06-10 | 1989-05-30 | Improved fool for solar cell production |
Country Status (10)
| Country | Link |
|---|---|
| EP (1) | EP0374244B1 (de) |
| JP (1) | JPH03502627A (de) |
| KR (1) | KR900702573A (de) |
| CN (1) | CN1025905C (de) |
| AU (1) | AU626895B2 (de) |
| CA (1) | CA1323452C (de) |
| DE (1) | DE68918565T2 (de) |
| IL (1) | IL90456A (de) |
| WO (1) | WO1989012321A1 (de) |
| ZA (1) | ZA893988B (de) |
Families Citing this family (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5118362A (en) * | 1990-09-24 | 1992-06-02 | Mobil Solar Energy Corporation | Electrical contacts and methods of manufacturing same |
| US5178685A (en) * | 1991-06-11 | 1993-01-12 | Mobil Solar Energy Corporation | Method for forming solar cell contacts and interconnecting solar cells |
| EP0542961B1 (de) * | 1991-06-11 | 1998-04-01 | Ase Americas, Inc. | Verbesserte solarzelle und verfahren zu ihrer herstellung |
| DE59207945D1 (de) * | 1991-11-11 | 1997-03-06 | Siemens Solar Gmbh | Verfahren zum Erzeugen feiner Elektrodenstruckturen |
| DE4220158A1 (de) * | 1992-06-19 | 1993-12-23 | Battelle Institut E V | Verfahren zur selektiven Abscheidung von Aluminiumstrukturen aus der Gasphase |
| US5411897A (en) * | 1994-02-04 | 1995-05-02 | Mobil Solar Energy Corporation | Machine and method for applying solder paste to electronic devices such as solar cells |
| US5478402A (en) * | 1994-02-17 | 1995-12-26 | Ase Americas, Inc. | Solar cell modules and method of making same |
| US5476553A (en) * | 1994-02-18 | 1995-12-19 | Ase Americas, Inc. | Solar cell modules and method of making same |
| US20030178057A1 (en) | 2001-10-24 | 2003-09-25 | Shuichi Fujii | Solar cell, manufacturing method thereof and electrode material |
| US7960645B2 (en) | 2003-05-07 | 2011-06-14 | Imec | Germanium solar cell and method for the production thereof |
| US7964789B2 (en) | 2003-05-07 | 2011-06-21 | Imec | Germanium solar cell and method for the production thereof |
| US7736940B2 (en) * | 2004-03-15 | 2010-06-15 | Solopower, Inc. | Technique and apparatus for depositing layers of semiconductors for solar cell and module fabrication |
| DE102004032706A1 (de) * | 2004-07-06 | 2006-02-02 | Epcos Ag | Verfahren zur Herstellung eines elektrischen Bauelements und das Bauelement |
| EP2149155B9 (de) * | 2007-05-07 | 2012-04-25 | Georgia Tech Research Corporation | Herstellung eines hochwertigen rückseitigen kontakts mit lokaler rückseitiger siebdruckfläche |
| US7820540B2 (en) * | 2007-12-21 | 2010-10-26 | Palo Alto Research Center Incorporated | Metallization contact structures and methods for forming multiple-layer electrode structures for silicon solar cells |
| GB2459274A (en) * | 2008-04-15 | 2009-10-21 | Renewable Energy Corp Asa | Wafer based solar panels |
| DE102008033169A1 (de) * | 2008-05-07 | 2009-11-12 | Ersol Solar Energy Ag | Verfahren zur Herstellung einer monokristallinen Solarzelle |
| KR101322142B1 (ko) | 2009-05-20 | 2013-10-28 | 이 아이 듀폰 디 네모아 앤드 캄파니 | 규소 웨이퍼의 전면 상에 그리드 전극을 형성하는 방법 |
| US8486826B2 (en) | 2009-05-20 | 2013-07-16 | E I Du Pont De Nemours And Company | Process of forming a grid electrode on the front-side of a silicon wafer |
| CN102428566A (zh) * | 2009-05-20 | 2012-04-25 | E.I.内穆尔杜邦公司 | 在硅片正面上形成栅极的方法 |
| CN101807611B (zh) * | 2010-04-01 | 2011-12-21 | 中国石油大学(华东) | 一种具有光伏效应的钯掺杂碳薄膜材料 |
| GB201219961D0 (en) | 2012-11-06 | 2012-12-19 | Intrinsiq Materials Ltd | Ink |
| WO2015096581A1 (zh) * | 2013-12-23 | 2015-07-02 | 伍震威 | 用于功率半导体装置的场板结构及其制造方法 |
| RU2568421C1 (ru) * | 2014-07-25 | 2015-11-20 | Федеральное государственное автономное образовательное учреждение высшего профессионального образования "Белгородский государственный национальный исследовательский университет", (НИУ "БелГУ") | СОЛНЕЧНЫЙ ЭЛЕМЕНТ НА ОСНОВЕ ГЕТЕРОСТРУКТУРЫ СМЕШАННЫЙ АМОРФНЫЙ И НАНОКРИСТАЛЛИЧЕСКИЙ НИТРИД КРЕМНИЯ - КРЕМНИЙ p-ТИПА |
| EP3265102A4 (de) | 2015-03-06 | 2018-12-05 | ATEA Pharmaceuticals, Inc. | Beta-d-2'-deoxy-2'alpha-fluor-2'-beta-c-substituierte-2-modifizierte-n6-substituierte purinnukleotide zur hcv-behandlung |
| US11804558B2 (en) | 2017-12-29 | 2023-10-31 | Maxeon Solar Pte. Ltd. | Conductive contacts for polycrystalline silicon features of solar cells |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4256513A (en) * | 1978-10-19 | 1981-03-17 | Matsushita Electric Industrial Co., Ltd. | Photoelectric conversion device |
| US4235644A (en) * | 1979-08-31 | 1980-11-25 | E. I. Du Pont De Nemours And Company | Thick film silver metallizations for silicon solar cells |
| US4375007A (en) * | 1980-11-26 | 1983-02-22 | E. I. Du Pont De Nemours & Co. | Silicon solar cells with aluminum-magnesium alloy low resistance contacts |
| US4347262A (en) * | 1980-11-26 | 1982-08-31 | E. I. Du Pont De Nemours And Company | Aluminum-magnesium alloys in low resistance contacts to silicon |
| US4602120A (en) * | 1983-11-25 | 1986-07-22 | Atlantic Richfield Company | Solar cell manufacture |
| JPS60140880A (ja) * | 1983-12-28 | 1985-07-25 | Hitachi Ltd | 太陽電池の製造方法 |
| JPS60202921A (ja) * | 1984-03-28 | 1985-10-14 | Hitachi Ltd | 太陽電池の製造方法 |
| JPS6249676A (ja) * | 1985-08-29 | 1987-03-04 | Sharp Corp | 太陽電池 |
| WO1989000341A1 (en) * | 1987-07-07 | 1989-01-12 | Mobil Solar Energy Corporation | Method of fabricating solar cells with anti-reflection coating |
-
1989
- 1989-05-22 EP EP89907945A patent/EP0374244B1/de not_active Expired - Lifetime
- 1989-05-22 AU AU38534/89A patent/AU626895B2/en not_active Ceased
- 1989-05-22 KR KR1019900700250A patent/KR900702573A/ko not_active IP Right Cessation
- 1989-05-22 WO PCT/US1989/002241 patent/WO1989012321A1/en active IP Right Grant
- 1989-05-22 DE DE68918565T patent/DE68918565T2/de not_active Expired - Lifetime
- 1989-05-22 JP JP1507317A patent/JPH03502627A/ja active Pending
- 1989-05-25 ZA ZA893988A patent/ZA893988B/xx unknown
- 1989-05-30 IL IL9045689A patent/IL90456A/en not_active IP Right Cessation
- 1989-06-07 CA CA000602039A patent/CA1323452C/en not_active Expired - Fee Related
- 1989-06-10 CN CN89103886A patent/CN1025905C/zh not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| ZA893988B (en) | 1991-04-24 |
| WO1989012321A1 (en) | 1989-12-14 |
| EP0374244A4 (en) | 1991-01-30 |
| EP0374244A1 (de) | 1990-06-27 |
| AU3853489A (en) | 1990-01-05 |
| CN1038902A (zh) | 1990-01-17 |
| AU626895B2 (en) | 1992-08-13 |
| KR900702573A (ko) | 1990-12-07 |
| EP0374244B1 (de) | 1994-09-28 |
| CN1025905C (zh) | 1994-09-07 |
| DE68918565D1 (de) | 1994-11-03 |
| CA1323452C (en) | 1993-10-19 |
| IL90456A0 (en) | 1990-01-18 |
| JPH03502627A (ja) | 1991-06-13 |
| DE68918565T2 (de) | 1995-03-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0374244B1 (de) | Verfahren zur herstellung von sonnenzellenkontakten | |
| US5698451A (en) | Method of fabricating contacts for solar cells | |
| US4703553A (en) | Drive through doping process for manufacturing low back surface recombination solar cells | |
| AU644021B2 (en) | Electrical contacts and method of manufacturing same | |
| CN1873836B (zh) | 制造半导体器件的方法以及用于该方法的导电组合物 | |
| CA1114050A (en) | Manufacture of solar cells | |
| EP0274890B1 (de) | Dauerhafte ohmische Kontakte für p-leitende, Tellur enthaltende II-VI-Halbleiterschichten | |
| US7435361B2 (en) | Conductive compositions and processes for use in the manufacture of semiconductor devices | |
| JP3255921B2 (ja) | 改良した太陽電池及びその製作方法 | |
| US4104084A (en) | Solar cells having integral collector grids | |
| JP2002511190A (ja) | シリコン太陽電池および他のデバイス用の自己ドーピング陰極および陽極のための方法および装置 | |
| US4163678A (en) | Solar cell with improved N-region contact and method of forming the same | |
| KR20020066327A (ko) | 반도체에 셀프 도핑 접점을 형성하는 방법 및 장치 | |
| JP2007521669A (ja) | セルフドーピングコンタクトを有した埋設コンタクト型太陽電池 | |
| JP2006302891A (ja) | 半導体デバイスの製造方法、およびそこで使用される導電性組成物 | |
| JPS6244864B2 (de) | ||
| EP0542959A4 (en) | Method for forming solar cell contacts and interconnecting solar cells | |
| US4153907A (en) | Photovoltaic cell with junction-free essentially-linear connections to its contacts | |
| US4105471A (en) | Solar cell with improved printed contact and method of making the same | |
| EP3101696B1 (de) | Solarzelle und verfahren zur herstellung einer solarzelle | |
| EP1873790A1 (de) | Pastenzusammensetzung, elektrode und solarzelleneinrichtung damit | |
| US4165241A (en) | Solar cell with improved printed contact and method of making the same | |
| EP0325606B1 (de) | Herstellungsverfahren von sonnenzellen mit antireflexionsschicht | |
| JP2002198547A (ja) | 太陽電池の製造方法 | |
| JP6495713B2 (ja) | 太陽電池素子およびその製造方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FF | Patent granted | ||
| RH | Patent void |