IL89706A - Buried junction infrared photodetector - Google Patents

Buried junction infrared photodetector

Info

Publication number
IL89706A
IL89706A IL89706A IL8970689A IL89706A IL 89706 A IL89706 A IL 89706A IL 89706 A IL89706 A IL 89706A IL 8970689 A IL8970689 A IL 8970689A IL 89706 A IL89706 A IL 89706A
Authority
IL
Israel
Prior art keywords
infrared photodetector
buried junction
junction infrared
buried
photodetector
Prior art date
Application number
IL89706A
Other languages
English (en)
Other versions
IL89706A0 (en
Original Assignee
Santa Barbara Res Center
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Santa Barbara Res Center filed Critical Santa Barbara Res Center
Publication of IL89706A0 publication Critical patent/IL89706A0/xx
Publication of IL89706A publication Critical patent/IL89706A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/1446—Devices controlled by radiation in a repetitive configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type
    • H01L31/1032—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type the devices comprising active layers formed only by AIIBVI compounds, e.g. HgCdTe IR photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
    • H01L31/1832—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising ternary compounds, e.g. Hg Cd Te

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Light Receiving Elements (AREA)
IL89706A 1988-04-07 1989-03-22 Buried junction infrared photodetector IL89706A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/178,680 US4956304A (en) 1988-04-07 1988-04-07 Buried junction infrared photodetector process

Publications (2)

Publication Number Publication Date
IL89706A0 IL89706A0 (en) 1989-09-28
IL89706A true IL89706A (en) 1992-09-06

Family

ID=22653492

Family Applications (1)

Application Number Title Priority Date Filing Date
IL89706A IL89706A (en) 1988-04-07 1989-03-22 Buried junction infrared photodetector

Country Status (6)

Country Link
US (1) US4956304A (ja)
EP (1) EP0374232B1 (ja)
JP (1) JP2664504B2 (ja)
DE (1) DE68917696T2 (ja)
IL (1) IL89706A (ja)
WO (1) WO1989010007A2 (ja)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5880510A (en) * 1988-05-11 1999-03-09 Raytheon Company Graded layer passivation of group II-VI infrared photodetectors
US5141878A (en) * 1990-04-02 1992-08-25 At&T Bell Laboratories Silicon photodiode for monolithic integrated circuits and method for making same
US5239193A (en) * 1990-04-02 1993-08-24 At&T Bell Laboratories Silicon photodiode for monolithic integrated circuits
US5100479A (en) * 1990-09-21 1992-03-31 The Board Of Regents Acting For And On Behalf Of The University Of Michigan Thermopile infrared detector with semiconductor supporting rim
US5314837A (en) * 1992-06-08 1994-05-24 Analog Devices, Incorporated Method of making a registration mark on a semiconductor
US5466953A (en) * 1993-05-28 1995-11-14 Santa Barbara Research Center Denuded zone field effect photoconductive detector
IL108589A (en) * 1994-02-08 1998-06-15 Technion Res & Dev Foundation SINGLE LAYER PLANAR Hg Cd Te PHOTOVOLTAIC INFRARED DETECTOR WITH HETEROSTRUCTURE PASSIVATION AND P-ON-N HOMOJUNCTION
US5536680A (en) * 1995-05-08 1996-07-16 Texas Instruments Incorporated Self-aligned bump bond infrared focal plane array architecture
US5804463A (en) * 1995-06-05 1998-09-08 Raytheon Ti Systems, Inc. Noble metal diffusion doping of mercury cadmium telluride for use in infrared detectors
US6180967B1 (en) * 1997-04-29 2001-01-30 Commissariat A L'energie Atomique Bicolor infrared detector with spatial/temporal coherence
US5998235A (en) 1997-06-26 1999-12-07 Lockheed Martin Corporation Method of fabrication for mercury-based quaternary alloys of infrared sensitive materials
KR100422294B1 (ko) * 2001-06-28 2004-03-12 한국과학기술연구원 Ｃｄ/Ｈｇ 분위기에서 열처리에 의한 ＨｇＣｄＴｅ 접합다이오드의 패시배이션 방법
US7041983B2 (en) * 2001-10-12 2006-05-09 Lockheed Martin Corporation Planar geometry buried junction infrared detector and focal plane array
AUPS001102A0 (en) * 2002-01-17 2002-02-07 University Of Western Australia, The An n-p junction and a method for making an n-p junction
US7456384B2 (en) * 2004-12-10 2008-11-25 Sony Corporation Method and apparatus for acquiring physical information, method for manufacturing semiconductor device including array of plurality of unit components for detecting physical quantity distribution, light-receiving device and manufacturing method therefor, and solid-state imaging device and manufacturing method therefor
GB0712618D0 (en) * 2007-06-29 2007-08-08 Durham Scient Crystals Ltd Semiconductor device structure and method of manufacture thereof
US20220102409A1 (en) * 2020-09-25 2022-03-31 Visera Technologies Company Limited Semiconductor device

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1585517A (en) * 1926-05-18 Available cop
US3496024A (en) * 1961-10-09 1970-02-17 Monsanto Co Photovoltaic cell with a graded energy gap
US3677280A (en) * 1971-06-21 1972-07-18 Fairchild Camera Instr Co Optimum high gain-bandwidth phototransistor structure
US3858306A (en) * 1971-08-05 1975-01-07 Honeywell Inc Alloy junctions in mercury cadmium telluride
FR2168934B1 (ja) * 1972-01-27 1977-04-01 Telecommunications Sa
FR2281650A1 (fr) * 1974-08-06 1976-03-05 Telecommunications Sa Procede de fabrication d'une photodiode sensible aux rayonnements infrarouges et photodiode obtenue par ce procede
FR2336804A1 (fr) * 1975-12-23 1977-07-22 Telecommunications Sa Perfectionnements apportes aux dispositifs semi-conducteurs, notamment aux detecteurs photovoltaiques comprenant un substrat a base d'un alliage cdxhg1-xte, et procede de fabrication d'un tel dispositif perfectionne
US4105478A (en) * 1977-01-06 1978-08-08 Honeywell, Inc. Doping hgcdte with li
US4206003A (en) * 1977-07-05 1980-06-03 Honeywell Inc. Method of forming a mercury cadmium telluride photodiode
US4181755A (en) * 1978-11-21 1980-01-01 Rca Corporation Thin film pattern generation by an inverse self-lifting technique
GB2095898B (en) * 1981-03-27 1985-01-09 Philips Electronic Associated Methods of manufacturing a detector device
EP0068652B1 (en) * 1981-06-24 1988-05-25 The Secretary of State for Defence in Her Britannic Majesty's Government of the United Kingdom of Great Britain and Photo diodes
US4439912A (en) * 1982-04-19 1984-04-03 The United States Of America As Represented By The Secretary Of The Army Infrared detector and method of making same
JPS5979582A (ja) * 1982-10-29 1984-05-08 Fujitsu Ltd 半導体素子の製造方法
FR2536908B1 (fr) * 1982-11-30 1986-03-14 Telecommunications Sa Procede de fabrication d'un detecteur infrarouge matriciel a eclairage par la face avant
US4454008A (en) * 1983-02-24 1984-06-12 The United States Of America As Represented By The Secretary Of The Army Electrochemical method for producing a passivated junction in alloy semiconductors
US4465565A (en) * 1983-03-28 1984-08-14 Ford Aerospace & Communications Corporation CdTe passivation of HgCdTe by electrochemical deposition
US4549195A (en) * 1983-04-14 1985-10-22 Westinghouse Electric Corp. Heterojunction semiconductor device
US4436580A (en) * 1983-08-12 1984-03-13 The United States Of America As Represented By The Secretary Of The Army Method of preparing a mercury cadium telluride substrate for passivation and processing
US4456630A (en) * 1983-08-18 1984-06-26 Monosolar, Inc. Method of forming ohmic contacts
US4640738A (en) * 1984-06-22 1987-02-03 International Business Machines Corporation Semiconductor contact protection
US4589192A (en) * 1984-11-02 1986-05-20 The United States Of America As Represented By The Secretary Of The Army Hybrid epitaxial growth process
US4588446A (en) * 1985-02-21 1986-05-13 Texas Instruments Incorporated Method for producing graded band gap mercury cadmium telluride
JPS6244868A (ja) * 1985-08-22 1987-02-26 Nec Corp デ−タ出力方式
US4687542A (en) * 1985-10-24 1987-08-18 Texas Instruments Incorporated Vacuum processing system
US4639756A (en) * 1986-05-05 1987-01-27 Santa Barbara Research Center Graded gap inversion layer photodiode array
FR2604298B1 (fr) * 1986-09-19 1988-10-28 Commissariat Energie Atomique Procede de realisation d'une prise de contact electrique sur un substrat en hgcdte de conductivite p et application a la fabrication d'une diode n/p
JPH0661508B2 (ja) * 1989-07-03 1994-08-17 有限会社寿技研 エアーフィルター内蔵式エアー工具
JP3059530B2 (ja) * 1991-06-27 2000-07-04 株式会社リコー ファクシミリ装置

Also Published As

Publication number Publication date
WO1989010007A2 (en) 1989-10-19
IL89706A0 (en) 1989-09-28
DE68917696D1 (de) 1994-09-29
EP0374232A1 (en) 1990-06-27
JPH02503973A (ja) 1990-11-15
US4956304A (en) 1990-09-11
WO1989010007A3 (en) 1990-05-31
EP0374232B1 (en) 1994-08-24
JP2664504B2 (ja) 1997-10-15
DE68917696T2 (de) 1995-04-27

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Legal Events

Date Code Title Description
HC Change of name of proprietor(s)
KB Patent renewed
RH1 Patent not in force