IL86658A0 - Method of fabricating solar cells with silicon nitride coating - Google Patents
Method of fabricating solar cells with silicon nitride coatingInfo
- Publication number
- IL86658A0 IL86658A0 IL86658A IL8665888A IL86658A0 IL 86658 A0 IL86658 A0 IL 86658A0 IL 86658 A IL86658 A IL 86658A IL 8665888 A IL8665888 A IL 8665888A IL 86658 A0 IL86658 A0 IL 86658A0
- Authority
- IL
- Israel
- Prior art keywords
- silicon nitride
- solar cells
- nitride coating
- fabricating solar
- fabricating
- Prior art date
Links
- 229910052581 Si3N4 Inorganic materials 0.000 title 1
- 239000011248 coating agent Substances 0.000 title 1
- 238000000576 coating method Methods 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/318—Inorganic layers composed of nitrides
- H01L21/3185—Inorganic layers composed of nitrides of siliconnitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/071,018 US4751191A (en) | 1987-07-08 | 1987-07-08 | Method of fabricating solar cells with silicon nitride coating |
Publications (1)
Publication Number | Publication Date |
---|---|
IL86658A0 true IL86658A0 (en) | 1988-11-30 |
Family
ID=22098779
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IL86658A IL86658A0 (en) | 1987-07-08 | 1988-06-07 | Method of fabricating solar cells with silicon nitride coating |
Country Status (11)
Country | Link |
---|---|
US (1) | US4751191A (xx) |
EP (1) | EP0324826A4 (xx) |
JP (1) | JPH01503743A (xx) |
KR (1) | KR890702259A (xx) |
CN (1) | CN1012603B (xx) |
AU (1) | AU1968588A (xx) |
DE (1) | DE3890569T1 (xx) |
GB (1) | GB2215130B (xx) |
IL (1) | IL86658A0 (xx) |
WO (1) | WO1989000342A1 (xx) |
ZA (1) | ZA884091B (xx) |
Families Citing this family (77)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4945065A (en) * | 1988-06-02 | 1990-07-31 | Mobil Solar Energy Corporation | Method of passivating crystalline substrates |
US5698451A (en) * | 1988-06-10 | 1997-12-16 | Mobil Solar Energy Corporation | Method of fabricating contacts for solar cells |
US5011782A (en) * | 1989-03-31 | 1991-04-30 | Electric Power Research Institute | Method of making passivated antireflective coating for photovoltaic cell |
US5011565A (en) * | 1989-12-06 | 1991-04-30 | Mobil Solar Energy Corporation | Dotted contact solar cell and method of making same |
JP2513055B2 (ja) * | 1990-02-14 | 1996-07-03 | 日本電装株式会社 | 半導体装置の製造方法 |
US5045346A (en) * | 1990-07-31 | 1991-09-03 | Gte Laboratories Incorporated | Method of depositing fluorinated silicon nitride |
US5110369A (en) * | 1990-10-24 | 1992-05-05 | Mobil Solar Energy Corporation | Cable interconnections for solar cell modules |
US5178685A (en) * | 1991-06-11 | 1993-01-12 | Mobil Solar Energy Corporation | Method for forming solar cell contacts and interconnecting solar cells |
DE59310390D1 (de) * | 1992-03-20 | 2006-10-12 | Shell Solar Gmbh | Herstellungsverfahren einer Solarzelle mit kombinierter Metallisierung |
JP2791525B2 (ja) * | 1992-04-16 | 1998-08-27 | 三菱電機株式会社 | 反射防止膜の選定方法およびその方法により選定された反射防止膜 |
EP0597080A4 (en) * | 1992-05-27 | 1994-11-02 | Mobil Solar Energy Corp | SUN CELL WITH THICK ALUMINUM CONTACTS. |
US5270248A (en) * | 1992-08-07 | 1993-12-14 | Mobil Solar Energy Corporation | Method for forming diffusion junctions in solar cell substrates |
JP2875945B2 (ja) * | 1993-01-28 | 1999-03-31 | アプライド マテリアルズ インコーポレイテッド | Cvdにより大面積のガラス基板上に高堆積速度でシリコン窒化薄膜を堆積する方法 |
US5411897A (en) * | 1994-02-04 | 1995-05-02 | Mobil Solar Energy Corporation | Machine and method for applying solder paste to electronic devices such as solar cells |
US5478402A (en) * | 1994-02-17 | 1995-12-26 | Ase Americas, Inc. | Solar cell modules and method of making same |
US5476553A (en) * | 1994-02-18 | 1995-12-19 | Ase Americas, Inc. | Solar cell modules and method of making same |
US6225219B1 (en) * | 1999-12-20 | 2001-05-01 | United Microelectronics Corp. | Method of stabilizing anti-reflection coating layer |
JP2002343770A (ja) * | 2001-05-16 | 2002-11-29 | Seiko Epson Corp | エッチング方法、エッチング装置及び半導体装置の製造方法 |
WO2004038462A1 (en) * | 2002-10-22 | 2004-05-06 | Sunray Technologies, Inc. | Diffractive structures for the redirection and concentration of optical radiation |
US7170001B2 (en) * | 2003-06-26 | 2007-01-30 | Advent Solar, Inc. | Fabrication of back-contacted silicon solar cells using thermomigration to create conductive vias |
US7649141B2 (en) * | 2003-06-30 | 2010-01-19 | Advent Solar, Inc. | Emitter wrap-through back contact solar cells on thin silicon wafers |
US7129151B2 (en) * | 2003-11-04 | 2006-10-31 | Taiwan Semiconductor Manufacturing Co., Ltd. | Planarizing method employing hydrogenated silicon nitride planarizing stop layer |
US7144751B2 (en) * | 2004-02-05 | 2006-12-05 | Advent Solar, Inc. | Back-contact solar cells and methods for fabrication |
US20050172996A1 (en) * | 2004-02-05 | 2005-08-11 | Advent Solar, Inc. | Contact fabrication of emitter wrap-through back contact silicon solar cells |
US7335555B2 (en) * | 2004-02-05 | 2008-02-26 | Advent Solar, Inc. | Buried-contact solar cells with self-doping contacts |
US20060060238A1 (en) * | 2004-02-05 | 2006-03-23 | Advent Solar, Inc. | Process and fabrication methods for emitter wrap through back contact solar cells |
US7253125B1 (en) | 2004-04-16 | 2007-08-07 | Novellus Systems, Inc. | Method to improve mechanical strength of low-k dielectric film using modulated UV exposure |
US9659769B1 (en) | 2004-10-22 | 2017-05-23 | Novellus Systems, Inc. | Tensile dielectric films using UV curing |
US8889233B1 (en) | 2005-04-26 | 2014-11-18 | Novellus Systems, Inc. | Method for reducing stress in porous dielectric films |
US8454750B1 (en) | 2005-04-26 | 2013-06-04 | Novellus Systems, Inc. | Multi-station sequential curing of dielectric films |
US8980769B1 (en) | 2005-04-26 | 2015-03-17 | Novellus Systems, Inc. | Multi-station sequential curing of dielectric films |
CN100408615C (zh) * | 2005-05-20 | 2008-08-06 | 中国科学院化学研究所 | 一种含丁二炔基聚硅氮烷及其制备方法 |
JP2009515369A (ja) * | 2005-11-07 | 2009-04-09 | アプライド マテリアルズ インコーポレイテッド | 光電池接触部及び配線の形成 |
US8465991B2 (en) | 2006-10-30 | 2013-06-18 | Novellus Systems, Inc. | Carbon containing low-k dielectric constant recovery using UV treatment |
US10037905B2 (en) * | 2009-11-12 | 2018-07-31 | Novellus Systems, Inc. | UV and reducing treatment for K recovery and surface clean in semiconductor processing |
US20100267231A1 (en) * | 2006-10-30 | 2010-10-21 | Van Schravendijk Bart | Apparatus for uv damage repair of low k films prior to copper barrier deposition |
KR100900443B1 (ko) * | 2006-11-20 | 2009-06-01 | 엘지전자 주식회사 | 태양전지 및 그의 제조방법 |
CA2568136C (en) * | 2006-11-30 | 2008-07-29 | Tenxc Wireless Inc. | Butler matrix implementation |
US20080216887A1 (en) * | 2006-12-22 | 2008-09-11 | Advent Solar, Inc. | Interconnect Technologies for Back Contact Solar Cells and Modules |
US20090178704A1 (en) * | 2007-02-06 | 2009-07-16 | Kalejs Juris P | Solar electric module with redirection of incident light |
US20080185033A1 (en) * | 2007-02-06 | 2008-08-07 | Kalejs Juris P | Solar electric module |
US20090032087A1 (en) * | 2007-02-06 | 2009-02-05 | Kalejs Juris P | Manufacturing processes for light concentrating solar module |
TW200905901A (en) * | 2007-03-29 | 2009-02-01 | Daniel F Baldwin | Solar module manufacturing processes |
JP5124189B2 (ja) * | 2007-07-11 | 2013-01-23 | シャープ株式会社 | 光電変換素子の製造方法 |
US8211510B1 (en) | 2007-08-31 | 2012-07-03 | Novellus Systems, Inc. | Cascaded cure approach to fabricate highly tensile silicon nitride films |
WO2009064870A2 (en) * | 2007-11-13 | 2009-05-22 | Advent Solar, Inc. | Selective emitter and texture processes for back contact solar cells |
JP5173370B2 (ja) * | 2007-11-21 | 2013-04-03 | シャープ株式会社 | 光電変換素子の製造方法 |
DE102008020324A1 (de) * | 2008-04-23 | 2009-10-29 | Clariant International Limited | Polysilazane enthaltende Beschichtungen zur Erhöhung der Lichtausbeute von verkapselten Solarzellen |
CN102113130A (zh) * | 2008-04-29 | 2011-06-29 | 应用材料股份有限公司 | 使用单石模块组合技术制造的光伏打模块 |
JP2009272428A (ja) * | 2008-05-07 | 2009-11-19 | Shimadzu Corp | 反射防止膜成膜方法および反射防止膜成膜装置 |
TWI362759B (en) * | 2008-06-09 | 2012-04-21 | Delsolar Co Ltd | Solar module and system composed of a solar cell with a novel rear surface structure |
US9050623B1 (en) | 2008-09-12 | 2015-06-09 | Novellus Systems, Inc. | Progressive UV cure |
US7816239B2 (en) * | 2008-11-20 | 2010-10-19 | Varian Semiconductor Equipment Associates, Inc. | Technique for manufacturing a solar cell |
GB2467361A (en) * | 2009-01-30 | 2010-08-04 | Renewable Energy Corp Asa | Contact and interconnect for a solar cell |
GB2467360A (en) * | 2009-01-30 | 2010-08-04 | Renewable Energy Corp Asa | Contact for a solar cell |
DE102009013904A1 (de) | 2009-03-19 | 2010-09-23 | Clariant International Limited | Solarzellen mit einer Verkapselungsschicht auf Basis von Polysilazan |
DE102009013903A1 (de) | 2009-03-19 | 2010-09-23 | Clariant International Limited | Solarzellen mit einer Barriereschicht auf Basis von Polysilazan |
FR2950479B1 (fr) * | 2009-09-18 | 2012-03-23 | Commissariat Energie Atomique | Procede de realisation d'une structure en plots regulierement espaces |
US8574950B2 (en) * | 2009-10-30 | 2013-11-05 | International Business Machines Corporation | Electrically contactable grids manufacture |
US20110272024A1 (en) * | 2010-04-13 | 2011-11-10 | Applied Materials, Inc. | MULTI-LAYER SiN FOR FUNCTIONAL AND OPTICAL GRADED ARC LAYERS ON CRYSTALLINE SOLAR CELLS |
JP2012023343A (ja) * | 2010-06-18 | 2012-02-02 | Semiconductor Energy Lab Co Ltd | 光電変換装置及びその作製方法 |
KR101661768B1 (ko) * | 2010-09-03 | 2016-09-30 | 엘지전자 주식회사 | 태양전지 및 이의 제조 방법 |
KR101835293B1 (ko) * | 2010-09-03 | 2018-03-06 | 테트라썬, 아이엔씨. | 광학코팅의 부분적 리프트-오프에 의한 광기전력 장치의 미세라인 금속화 |
CN102487106A (zh) * | 2010-12-02 | 2012-06-06 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 晶体硅太阳能电池及其制造方法 |
KR20120084104A (ko) * | 2011-01-19 | 2012-07-27 | 엘지전자 주식회사 | 태양전지 |
CN110246918A (zh) | 2012-03-27 | 2019-09-17 | 3M创新有限公司 | 包括光定向介质的光伏组件及其制备方法 |
JP2015528645A (ja) * | 2012-09-17 | 2015-09-28 | アイメック・ヴェーゼットウェーImec Vzw | めっき金属層のシリコンへの接着の改良方法 |
US10348239B2 (en) | 2013-05-02 | 2019-07-09 | 3M Innovative Properties Company | Multi-layered solar cell device |
WO2015006097A1 (en) | 2013-07-09 | 2015-01-15 | 3M Innovative Properties Company | Reflecting films with rounded microstructures for use in solar modules |
US9236243B2 (en) * | 2014-01-09 | 2016-01-12 | Stmicroelectronics Pte Ltd | Method for making semiconductor devices including reactant treatment of residual surface portion |
US9673341B2 (en) | 2015-05-08 | 2017-06-06 | Tetrasun, Inc. | Photovoltaic devices with fine-line metallization and methods for manufacture |
WO2017066146A1 (en) | 2015-10-12 | 2017-04-20 | 3M Innovative Properties Company | Light redirecting film useful with solar modules |
CN108701589A (zh) * | 2016-02-16 | 2018-10-23 | G射线瑞士公司 | 用于跨越键合界面传输电荷的结构、系统和方法 |
US9847221B1 (en) | 2016-09-29 | 2017-12-19 | Lam Research Corporation | Low temperature formation of high quality silicon oxide films in semiconductor device manufacturing |
US20180138328A1 (en) * | 2016-11-11 | 2018-05-17 | Sunpower Corporation | Uv-curing of light-receiving surfaces of solar cells |
JP2021511685A (ja) | 2018-01-30 | 2021-05-06 | スリーエム イノベイティブ プロパティズ カンパニー | 光方向転換デバイス、及び同デバイスを備える太陽電池モジュール |
US20210313482A1 (en) | 2018-08-31 | 2021-10-07 | 3M Innovative Properties Company | Light redirecting film having stray-light mitigation properties useful with solar modules |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58220477A (ja) * | 1982-06-16 | 1983-12-22 | Japan Solar Energ Kk | 太陽電池の製造方法 |
US4451969A (en) * | 1983-01-10 | 1984-06-05 | Mobil Solar Energy Corporation | Method of fabricating solar cells |
US4608097A (en) * | 1984-10-05 | 1986-08-26 | Exxon Research And Engineering Co. | Method for producing an electronically passivated surface on crystalline silicon using a fluorination treatment and an organic overlayer |
-
1987
- 1987-07-08 US US07/071,018 patent/US4751191A/en not_active Expired - Lifetime
-
1988
- 1988-06-07 KR KR1019890700401A patent/KR890702259A/ko not_active Application Discontinuation
- 1988-06-07 DE DE883890569T patent/DE3890569T1/de not_active Withdrawn
- 1988-06-07 IL IL86658A patent/IL86658A0/xx unknown
- 1988-06-07 AU AU19685/88A patent/AU1968588A/en not_active Abandoned
- 1988-06-07 JP JP63505621A patent/JPH01503743A/ja active Pending
- 1988-06-07 WO PCT/US1988/001914 patent/WO1989000342A1/en not_active Application Discontinuation
- 1988-06-07 EP EP19880906330 patent/EP0324826A4/en not_active Withdrawn
- 1988-06-08 ZA ZA884091A patent/ZA884091B/xx unknown
- 1988-06-14 CN CN88103828A patent/CN1012603B/zh not_active Expired
-
1989
- 1989-02-21 GB GB8903853A patent/GB2215130B/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0324826A1 (en) | 1989-07-26 |
CN1030498A (zh) | 1989-01-18 |
JPH01503743A (ja) | 1989-12-14 |
US4751191A (en) | 1988-06-14 |
EP0324826A4 (en) | 1991-06-12 |
KR890702259A (ko) | 1989-12-23 |
CN1012603B (zh) | 1991-05-08 |
GB8903853D0 (en) | 1989-05-04 |
GB2215130B (en) | 1991-07-24 |
WO1989000342A1 (en) | 1989-01-12 |
GB2215130A (en) | 1989-09-13 |
DE3890569T1 (de) | 1989-07-06 |
ZA884091B (en) | 1989-03-29 |
AU1968588A (en) | 1989-01-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
GB2215130B (en) | Method of fabricating solar cells with silicon nitride coating | |
AU2799089A (en) | Solar cell fabrication method and solar cell made thereby | |
IL70639A0 (en) | Method of fabricating solar cells | |
AU562656B2 (en) | Fabricating polycrystalline silicon wafers | |
GB8818292D0 (en) | Method of manufacturing polycrystalline silicon | |
IL67982A (en) | Ternary ii-v multicolor solar cells and process of fabrication | |
GB2260220B (en) | An amorphous silicon solar cell and method of the solar cell manufacture | |
ZA893988B (en) | Method of fabricating contacts for solar cells | |
JPS5662378A (en) | Semiconductor layer solar battery and method of manufacturing same | |
EP0111750A3 (en) | Amorphous silicium solar cell and method of manufacturing the same | |
EP0175567A3 (en) | Semiconductor solar cells | |
SG104291G (en) | Method of fabricating semiconductor devices such as solar cells with antireflecting coating | |
JPS57139972A (en) | Method of producing amorphous silicon solar battery | |
AU1969688A (en) | Manufacture of solar cells | |
EP0272636A3 (en) | Method of manufacturing group iii-v compound semiconductor solar battery | |
DE3568457D1 (en) | Method of depositing silicon films with reduced structural defects | |
GB8405687D0 (en) | Solar cell of amorphous silicon | |
AU3946789A (en) | An improved method of fabricating solar cells | |
KR900007129A (ko) | 비정질 실리콘 태양전지의 제조방법 | |
DE3560222D1 (en) | Fabrication process of silicon crystal bodies with large surfaces for solar cells | |
GB2175137B (en) | Method of fabricating solar cells | |
JPS5624982A (en) | Method of manufacturing silicon containing layer and solar battery associated with layer produced thereby | |
DE3560643D1 (en) | Process for producing large-surface silicon crystal bodies for solar cells | |
DE3566420D1 (en) | Process for making macrocrystalline silicon articles for solar cells | |
GB2160360B (en) | Method of fabricating solar cells |