IL84526A - Condensate diamond,apparatus and process for producing same - Google Patents

Condensate diamond,apparatus and process for producing same

Info

Publication number
IL84526A
IL84526A IL84526A IL8452687A IL84526A IL 84526 A IL84526 A IL 84526A IL 84526 A IL84526 A IL 84526A IL 8452687 A IL8452687 A IL 8452687A IL 84526 A IL84526 A IL 84526A
Authority
IL
Israel
Prior art keywords
diamond
condensate
producing same
condense
hydrogen
Prior art date
Application number
IL84526A
Other languages
English (en)
Other versions
IL84526A0 (en
Original Assignee
Gen Electric
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gen Electric filed Critical Gen Electric
Publication of IL84526A0 publication Critical patent/IL84526A0/xx
Publication of IL84526A publication Critical patent/IL84526A/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/517—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using a combination of discharges covered by two or more of groups C23C16/503 - C23C16/515
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Inorganic Fibers (AREA)
  • Lubricants (AREA)
  • Chemical Vapour Deposition (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
IL84526A 1986-12-22 1987-11-19 Condensate diamond,apparatus and process for producing same IL84526A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US94472986A 1986-12-22 1986-12-22

Publications (2)

Publication Number Publication Date
IL84526A0 IL84526A0 (en) 1988-04-29
IL84526A true IL84526A (en) 1991-09-16

Family

ID=25481962

Family Applications (1)

Application Number Title Priority Date Filing Date
IL84526A IL84526A (en) 1986-12-22 1987-11-19 Condensate diamond,apparatus and process for producing same

Country Status (9)

Country Link
EP (1) EP0272418B1 (pt)
JP (1) JPS63182297A (pt)
KR (1) KR960000063B1 (pt)
AT (1) ATE80672T1 (pt)
AU (1) AU598611B2 (pt)
BR (1) BR8706982A (pt)
DE (1) DE3781780T2 (pt)
IL (1) IL84526A (pt)
ZA (1) ZA877921B (pt)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0776149B2 (ja) * 1987-10-15 1995-08-16 昭和電工株式会社 気相法によるダイヤモンド合成法
ZA888034B (en) * 1987-12-17 1989-06-28 Gen Electric Diamond growth process
WO1990005701A1 (en) * 1988-11-16 1990-05-31 Andrew Carey Good Diamond production
US5106452A (en) * 1989-06-05 1992-04-21 Semiconductor Energy Laboratory Co., Ltd. Method of depositing diamond and diamond light emitting device
DE3935865C1 (pt) * 1989-10-27 1990-10-04 Philips Patentverwaltung Gmbh, 2000 Hamburg, De
GB2240114B (en) * 1990-01-18 1993-03-24 Stc Plc Film nucleation process
SE9002136D0 (sv) * 1990-06-15 1990-06-15 Sandvik Ab Cement carbide body for rock drilling, mineral cutting and highway engineering
SE9002137D0 (sv) * 1990-06-15 1990-06-15 Diamant Boart Stratabit Sa Improved tools for cutting rock drilling
SE9002135D0 (sv) * 1990-06-15 1990-06-15 Sandvik Ab Improved tools for percussive and rotary crusching rock drilling provided with a diamond layer
SE9003251D0 (sv) * 1990-10-11 1990-10-11 Diamant Boart Stratabit Sa Improved tools for rock drilling, metal cutting and wear part applications
CA2077773A1 (en) * 1991-10-25 1993-04-26 Thomas R. Anthony Microwave, rf, or ac/dc discharge assisted flame deposition of cvd diamond
US5417475A (en) * 1992-08-19 1995-05-23 Sandvik Ab Tool comprised of a holder body and a hard insert and method of using same
US5837071A (en) * 1993-11-03 1998-11-17 Sandvik Ab Diamond coated cutting tool insert and method of making same
JP3051912B2 (ja) * 1996-09-03 2000-06-12 科学技術庁無機材質研究所長 リンドープダイヤモンドの合成法
US6066399A (en) * 1997-03-19 2000-05-23 Sanyo Electric Co., Ltd. Hard carbon thin film and method of forming the same
US7402835B2 (en) 2002-07-18 2008-07-22 Chevron U.S.A. Inc. Heteroatom-containing diamondoid transistors
DE102009015545B4 (de) * 2009-03-02 2013-10-17 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Beschichtungsanlage mit Aktivierungselement, deren Verwendung sowie Verfahren zur Abscheidung einer Beschichtung
DE102009023471B4 (de) * 2009-06-02 2012-08-30 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Beschichtungsanlage und -verfahren
SG11201504017WA (en) 2012-11-21 2015-06-29 Nat Oilwell Dht Lp Fixed cutter drill bit cutter elements including hard cutting tables made from cvd synthetic diamonds

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58156594A (ja) * 1982-03-08 1983-09-17 Sumitomo Electric Ind Ltd 硬質被膜の製造法
JPS59232991A (ja) * 1983-06-16 1984-12-27 Sumitomo Electric Ind Ltd ダイヤモンド薄膜の製造法
JPS60221395A (ja) * 1984-04-19 1985-11-06 Yoshio Imai ダイヤモンド薄膜の製造方法
JPS61106494A (ja) * 1984-10-29 1986-05-24 Kyocera Corp ダイヤモンド被膜部材及びその製法
DE3768284D1 (de) * 1986-01-17 1991-04-11 Sumitomo Electric Industries Herstellung von diamant.
US4830702A (en) * 1987-07-02 1989-05-16 General Electric Company Hollow cathode plasma assisted apparatus and method of diamond synthesis
ZA888034B (en) * 1987-12-17 1989-06-28 Gen Electric Diamond growth process

Also Published As

Publication number Publication date
KR880007362A (ko) 1988-08-27
IL84526A0 (en) 1988-04-29
EP0272418A2 (en) 1988-06-29
KR960000063B1 (ko) 1996-01-03
AU598611B2 (en) 1990-06-28
AU8195187A (en) 1988-06-23
ATE80672T1 (de) 1992-10-15
BR8706982A (pt) 1988-07-26
DE3781780D1 (de) 1992-10-22
JPH0472798B2 (pt) 1992-11-19
JPS63182297A (ja) 1988-07-27
DE3781780T2 (de) 1993-01-28
ZA877921B (en) 1988-04-21
EP0272418B1 (en) 1992-09-16
EP0272418A3 (en) 1989-06-07

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