IL84101A0 - Method and apparatus for constant angle of incidence scanning in ion beam systems - Google Patents

Method and apparatus for constant angle of incidence scanning in ion beam systems

Info

Publication number
IL84101A0
IL84101A0 IL84101A IL8410187A IL84101A0 IL 84101 A0 IL84101 A0 IL 84101A0 IL 84101 A IL84101 A IL 84101A IL 8410187 A IL8410187 A IL 8410187A IL 84101 A0 IL84101 A0 IL 84101A0
Authority
IL
Israel
Prior art keywords
ion beam
constant angle
beam systems
incidence scanning
incidence
Prior art date
Application number
IL84101A
Other languages
English (en)
Original Assignee
Varian Associates
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Varian Associates filed Critical Varian Associates
Publication of IL84101A0 publication Critical patent/IL84101A0/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
    • H01J37/1472—Deflecting along given lines
    • H01J37/1474—Scanning means
    • H01J37/1477—Scanning means electrostatic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
IL84101A 1986-10-08 1987-10-05 Method and apparatus for constant angle of incidence scanning in ion beam systems IL84101A0 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US91653486A 1986-10-08 1986-10-08

Publications (1)

Publication Number Publication Date
IL84101A0 true IL84101A0 (en) 1988-03-31

Family

ID=25437424

Family Applications (1)

Application Number Title Priority Date Filing Date
IL84101A IL84101A0 (en) 1986-10-08 1987-10-05 Method and apparatus for constant angle of incidence scanning in ion beam systems

Country Status (4)

Country Link
EP (1) EP0287630A4 (fr)
JP (1) JPH01500942A (fr)
IL (1) IL84101A0 (fr)
WO (1) WO1988002920A1 (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1987006391A1 (fr) * 1986-04-09 1987-10-22 Eclipse Ion Technology, Inc. Appareil et procede de balayage d'un faisceau d'ions
US4922106A (en) * 1986-04-09 1990-05-01 Varian Associates, Inc. Ion beam scanning method and apparatus
SE463055B (sv) * 1989-02-10 1990-10-01 Scanditronix Ab Anordning foer att bestraala artiklar med elektroner samt magnetisk lins foer avboejning av straalar av laddade partiklar, saerskilt elektroner
US5132544A (en) * 1990-08-29 1992-07-21 Nissin Electric Company Ltd. System for irradiating a surface with atomic and molecular ions using two dimensional magnetic scanning
US6222196B1 (en) * 1998-11-19 2001-04-24 Axcelis Technologies, Inc. Rotatable workpiece support including cyclindrical workpiece support surfaces for an ion beam implanter
US6677599B2 (en) 2000-03-27 2004-01-13 Applied Materials, Inc. System and method for uniformly implanting a wafer with an ion beam
US6661016B2 (en) 2000-06-22 2003-12-09 Proteros, Llc Ion implantation uniformity correction using beam current control
JP5535003B2 (ja) 2010-08-18 2014-07-02 三菱電機株式会社 半導体ウエハ冷却装置

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3845312A (en) * 1972-07-13 1974-10-29 Texas Instruments Inc Particle accelerator producing a uniformly expanded particle beam of uniform cross-sectioned density
JPS53119670A (en) * 1977-03-28 1978-10-19 Toshiba Corp Ion implanting method and apparatus for the same
US4101813A (en) * 1977-04-14 1978-07-18 The United States Of America As Represented By The United States Department Of Energy Double deflection system for an electron beam device
US4117339A (en) * 1977-07-01 1978-09-26 Burroughs Corporation Double deflection electron beam generator for employment in the fabrication of semiconductor and other devices
US4367411A (en) * 1979-06-04 1983-01-04 Varian Associates, Inc. Unitary electromagnet for double deflection scanning of charged particle beam
US4590379A (en) * 1980-09-16 1986-05-20 Martin Frederick W Achromatic deflector and quadrupole lens
US4282294A (en) * 1980-10-06 1981-08-04 Honeywell Inc. Polyvinyl blocking layer for preventing charge injection in a thermoplastic photoconductive device for holography
US4457359A (en) * 1982-05-25 1984-07-03 Varian Associates, Inc. Apparatus for gas-assisted, solid-to-solid thermal transfer with a semiconductor wafer
JPH0732108B2 (ja) * 1982-07-28 1995-04-10 株式会社日立製作所 電子線露光装置
JPS5941828A (ja) * 1982-09-01 1984-03-08 Hitachi Ltd イオン打込装置
JPS60240125A (ja) * 1984-05-15 1985-11-29 Fujitsu Ltd 露光方法
US4661712A (en) * 1985-05-28 1987-04-28 Varian Associates, Inc. Apparatus for scanning a high current ion beam with a constant angle of incidence
US4700077A (en) * 1986-03-05 1987-10-13 Eaton Corporation Ion beam implanter control system

Also Published As

Publication number Publication date
EP0287630A4 (fr) 1989-07-25
EP0287630A1 (fr) 1988-10-26
JPH01500942A (ja) 1989-03-30
WO1988002920A1 (fr) 1988-04-21

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