IL82182A - Graded gap inversion layer photodiode array - Google Patents

Graded gap inversion layer photodiode array

Info

Publication number
IL82182A
IL82182A IL82182A IL8218287A IL82182A IL 82182 A IL82182 A IL 82182A IL 82182 A IL82182 A IL 82182A IL 8218287 A IL8218287 A IL 8218287A IL 82182 A IL82182 A IL 82182A
Authority
IL
Israel
Prior art keywords
photodiode array
inversion layer
layer photodiode
graded gap
gap inversion
Prior art date
Application number
IL82182A
Other languages
English (en)
Other versions
IL82182A0 (en
Original Assignee
Santa Barbara Res Center
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Santa Barbara Res Center filed Critical Santa Barbara Res Center
Publication of IL82182A0 publication Critical patent/IL82182A0/xx
Publication of IL82182A publication Critical patent/IL82182A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
    • H01L31/02966—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe including ternary compounds, e.g. HgCdTe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14649—Infrared imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type
    • H01L31/1032—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type the devices comprising active layers formed only by AIIBVI compounds, e.g. HgCdTe IR photodiodes

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
IL82182A 1986-05-05 1987-04-10 Graded gap inversion layer photodiode array IL82182A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/859,674 US4639756A (en) 1986-05-05 1986-05-05 Graded gap inversion layer photodiode array

Publications (2)

Publication Number Publication Date
IL82182A0 IL82182A0 (en) 1987-10-30
IL82182A true IL82182A (en) 1990-11-05

Family

ID=25331473

Family Applications (1)

Application Number Title Priority Date Filing Date
IL82182A IL82182A (en) 1986-05-05 1987-04-10 Graded gap inversion layer photodiode array

Country Status (5)

Country Link
US (1) US4639756A (xx)
EP (1) EP0264437A1 (xx)
JP (1) JPH0728049B2 (xx)
IL (1) IL82182A (xx)
WO (1) WO1987007083A1 (xx)

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US6111254A (en) * 1986-07-14 2000-08-29 Lockheed Martin Corporation Infrared radiation detector
US6114697A (en) * 1986-07-14 2000-09-05 Lockheed Martin Corporation Bandgap radiation detector
US6201242B1 (en) 1987-08-05 2001-03-13 Lockheed Martin Corporation Bandgap radiation detector
US6198100B1 (en) 1987-08-05 2001-03-06 Lockheed Martin Corporation Method for fabricating an infrared radiation detector
US4813049A (en) * 1987-09-23 1989-03-14 Massachusetts Institute Of Technology Semimagnetic semiconductor laser
JP2702579B2 (ja) * 1988-02-04 1998-01-21 バテル メモリアル インスティテュート 逆ミセル系における化学反応
US5936268A (en) * 1988-03-29 1999-08-10 Raytheon Company Epitaxial passivation of group II-VI infrared photodetectors
US4956304A (en) * 1988-04-07 1990-09-11 Santa Barbara Research Center Buried junction infrared photodetector process
US5880510A (en) * 1988-05-11 1999-03-09 Raytheon Company Graded layer passivation of group II-VI infrared photodetectors
FR2633101B1 (fr) * 1988-06-16 1992-02-07 Commissariat Energie Atomique Photodiode et matrice de photodiodes sur hgcdte et leurs procedes de fabrication
US5166769A (en) * 1988-07-18 1992-11-24 General Instrument Corporation Passitvated mesa semiconductor and method for making same
GB2239555B (en) * 1989-03-01 1993-02-24 Philips Electronic Associated Infrared image-sensing devices and their manufacture
US4961098A (en) * 1989-07-03 1990-10-02 Santa Barbara Research Center Heterojunction photodiode array
JP2773930B2 (ja) * 1989-10-31 1998-07-09 三菱電機株式会社 光検知装置
US5049962A (en) * 1990-03-07 1991-09-17 Santa Barbara Research Center Control of optical crosstalk between adjacent photodetecting regions
US5061973A (en) * 1990-04-27 1991-10-29 The United States Of America As Represented By The Secretary Of The Navy Semiconductor heterojunction device with graded bandgap
GB2247985A (en) * 1990-09-12 1992-03-18 Philips Electronic Associated Plural-wavelength infrared detector devices
US5227656A (en) * 1990-11-06 1993-07-13 Cincinnati Electronics Corporation Electro-optical detector array
US5177580A (en) * 1991-01-22 1993-01-05 Santa Barbara Research Center Implant guarded mesa having improved detector uniformity
US5300777A (en) * 1992-03-26 1994-04-05 Texas Instruments Incorporated Two color infrared detector and method
EP0635892B1 (en) * 1992-07-21 2002-06-26 Raytheon Company Bake-stable HgCdTe photodetector and method for fabricating same
US5384267A (en) * 1993-10-19 1995-01-24 Texas Instruments Incorporated Method of forming infrared detector by hydrogen plasma etching to form refractory metal interconnects
US5436450A (en) * 1994-01-13 1995-07-25 Texas Instruments Incorporated Infrared detector local biasing structure and method
US5485010A (en) * 1994-01-13 1996-01-16 Texas Instruments Incorporated Thermal isolation structure for hybrid thermal imaging system
US5426304A (en) * 1994-01-13 1995-06-20 Texas Instruments Incorporated Infrared detector thermal isolation structure and method
US6133570A (en) * 1994-03-15 2000-10-17 Lockheed Martin Corporation Semiconductor photovoltaic diffractive resonant optical cavity infrared detector
US5593902A (en) * 1994-05-23 1997-01-14 Texas Instruments Incorporated Method of making photodiodes for low dark current operation having geometric enhancement
US5559332A (en) * 1994-11-04 1996-09-24 Texas Instruments Incorporated Thermal detector and method
US5742089A (en) * 1995-06-07 1998-04-21 Hughes Electronics Growth of low dislocation density HGCDTE detector structures
US5708269A (en) * 1995-08-15 1998-01-13 Raytheon Ti Systems, Inc. Thermal detector and method
US5627377A (en) * 1995-09-07 1997-05-06 Santa Barbara Research Center Single carrier-type solid-state radiation detector device
US6018414A (en) * 1996-03-04 2000-01-25 Raytheon Company Dual band infrared lens assembly using diffractive optics
US5852516A (en) * 1996-03-04 1998-12-22 Raytheon Ti Systems, Inc. Dual purpose infrared lens assembly using diffractive optics
US6249374B1 (en) 1996-03-04 2001-06-19 Raytheon Company Wide field of view infrared zoom lens assembly having a constant F/number
US6036770A (en) * 1996-04-04 2000-03-14 Raytheon Company Method of fabricating a laterally continuously graded mercury cadmium telluride layer
US6091127A (en) * 1997-04-02 2000-07-18 Raytheon Company Integrated infrared detection system
US6133615A (en) * 1998-04-13 2000-10-17 Wisconsin Alumni Research Foundation Photodiode arrays having minimized cross-talk between diodes
DE10037103A1 (de) * 2000-07-27 2002-02-14 Aeg Infrarot Module Gmbh Multispektrale Photodiode
FR2829616B1 (fr) * 2001-09-10 2004-03-12 St Microelectronics Sa Diode verticale de faible capacite
US7135698B2 (en) * 2002-12-05 2006-11-14 Lockheed Martin Corporation Multi-spectral infrared super-pixel photodetector and imager
US6897447B2 (en) * 2002-12-05 2005-05-24 Lockheed Martin Corporation Bias controlled multi-spectral infrared photodetector and imager
FR2868602B1 (fr) * 2004-04-05 2006-05-26 Commissariat Energie Atomique Circuit de detection photonique a structure mesa
KR101671552B1 (ko) * 2009-06-05 2016-11-01 내셔날 인스티튜트 오브 어드밴스드 인더스트리얼 사이언스 앤드 테크놀로지 센서, 반도체 기판 및 반도체 기판의 제조 방법
US8686471B2 (en) * 2011-04-28 2014-04-01 Drs Rsta, Inc. Minority carrier based HgCdTe infrared detectors and arrays
US20150319390A1 (en) * 2014-04-30 2015-11-05 Sandia Corporation Stacked and tiled focal plane array
FR3021807B1 (fr) * 2014-05-27 2017-09-29 Commissariat A L Energie Atomique Et Aux Energies Alternatives Matrice de photodiodes mesa a ftm amelioree
CN106847958B (zh) * 2016-12-07 2018-09-11 同方威视技术股份有限公司 光电二极管器件及光电二极管探测器
CN110931577B (zh) * 2019-11-11 2021-12-31 中国科学院上海技术物理研究所 纵向渐变的等离子激元增强红外宽谱吸收的人工微结构

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US4110778A (en) * 1977-06-21 1978-08-29 The United States Of America As Represented By The Secretary Of The Air Force Narrow-band inverted homo-heterojunction avalanche photodiode
US4206003A (en) * 1977-07-05 1980-06-03 Honeywell Inc. Method of forming a mercury cadmium telluride photodiode
US4183035A (en) * 1978-06-26 1980-01-08 Rockwell International Corporation Inverted heterojunction photodiode
GB2095898B (en) * 1981-03-27 1985-01-09 Philips Electronic Associated Methods of manufacturing a detector device
EP0068652B1 (en) * 1981-06-24 1988-05-25 The Secretary of State for Defence in Her Britannic Majesty's Government of the United Kingdom of Great Britain and Photo diodes
US4447291A (en) * 1983-08-31 1984-05-08 Texas Instruments Incorporated Method for via formation in HgCdTe

Also Published As

Publication number Publication date
WO1987007083A1 (en) 1987-11-19
US4639756A (en) 1987-01-27
JPH0728049B2 (ja) 1995-03-29
EP0264437A1 (en) 1988-04-27
IL82182A0 (en) 1987-10-30
JPS63503266A (ja) 1988-11-24

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