IL82182A - Graded gap inversion layer photodiode array - Google Patents
Graded gap inversion layer photodiode arrayInfo
- Publication number
- IL82182A IL82182A IL82182A IL8218287A IL82182A IL 82182 A IL82182 A IL 82182A IL 82182 A IL82182 A IL 82182A IL 8218287 A IL8218287 A IL 8218287A IL 82182 A IL82182 A IL 82182A
- Authority
- IL
- Israel
- Prior art keywords
- photodiode array
- inversion layer
- layer photodiode
- graded gap
- gap inversion
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
- H01L31/02966—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe including ternary compounds, e.g. HgCdTe
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14649—Infrared imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type
- H01L31/1032—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type the devices comprising active layers formed only by AIIBVI compounds, e.g. HgCdTe IR photodiodes
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/859,674 US4639756A (en) | 1986-05-05 | 1986-05-05 | Graded gap inversion layer photodiode array |
Publications (2)
Publication Number | Publication Date |
---|---|
IL82182A0 IL82182A0 (en) | 1987-10-30 |
IL82182A true IL82182A (en) | 1990-11-05 |
Family
ID=25331473
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IL82182A IL82182A (en) | 1986-05-05 | 1987-04-10 | Graded gap inversion layer photodiode array |
Country Status (5)
Country | Link |
---|---|
US (1) | US4639756A (en) |
EP (1) | EP0264437A1 (en) |
JP (1) | JPH0728049B2 (en) |
IL (1) | IL82182A (en) |
WO (1) | WO1987007083A1 (en) |
Families Citing this family (48)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6111254A (en) * | 1986-07-14 | 2000-08-29 | Lockheed Martin Corporation | Infrared radiation detector |
US6114697A (en) * | 1986-07-14 | 2000-09-05 | Lockheed Martin Corporation | Bandgap radiation detector |
US6201242B1 (en) | 1987-08-05 | 2001-03-13 | Lockheed Martin Corporation | Bandgap radiation detector |
US6198100B1 (en) | 1987-08-05 | 2001-03-06 | Lockheed Martin Corporation | Method for fabricating an infrared radiation detector |
US4813049A (en) * | 1987-09-23 | 1989-03-14 | Massachusetts Institute Of Technology | Semimagnetic semiconductor laser |
JP2702579B2 (en) * | 1988-02-04 | 1998-01-21 | バテル メモリアル インスティテュート | Chemical reactions in reverse micelle systems |
US5936268A (en) * | 1988-03-29 | 1999-08-10 | Raytheon Company | Epitaxial passivation of group II-VI infrared photodetectors |
US4956304A (en) * | 1988-04-07 | 1990-09-11 | Santa Barbara Research Center | Buried junction infrared photodetector process |
US5880510A (en) * | 1988-05-11 | 1999-03-09 | Raytheon Company | Graded layer passivation of group II-VI infrared photodetectors |
FR2633101B1 (en) * | 1988-06-16 | 1992-02-07 | Commissariat Energie Atomique | PHOTODIODE AND MATRIX OF PHOTODIODES ON HGCDTE AND METHODS OF MAKING SAME |
US5166769A (en) * | 1988-07-18 | 1992-11-24 | General Instrument Corporation | Passitvated mesa semiconductor and method for making same |
GB2239555B (en) * | 1989-03-01 | 1993-02-24 | Philips Electronic Associated | Infrared image-sensing devices and their manufacture |
US4961098A (en) * | 1989-07-03 | 1990-10-02 | Santa Barbara Research Center | Heterojunction photodiode array |
JP2773930B2 (en) * | 1989-10-31 | 1998-07-09 | 三菱電機株式会社 | Light detection device |
US5049962A (en) * | 1990-03-07 | 1991-09-17 | Santa Barbara Research Center | Control of optical crosstalk between adjacent photodetecting regions |
US5061973A (en) * | 1990-04-27 | 1991-10-29 | The United States Of America As Represented By The Secretary Of The Navy | Semiconductor heterojunction device with graded bandgap |
GB2247985A (en) * | 1990-09-12 | 1992-03-18 | Philips Electronic Associated | Plural-wavelength infrared detector devices |
US5227656A (en) * | 1990-11-06 | 1993-07-13 | Cincinnati Electronics Corporation | Electro-optical detector array |
US5177580A (en) * | 1991-01-22 | 1993-01-05 | Santa Barbara Research Center | Implant guarded mesa having improved detector uniformity |
US5300777A (en) * | 1992-03-26 | 1994-04-05 | Texas Instruments Incorporated | Two color infrared detector and method |
EP0635892B1 (en) * | 1992-07-21 | 2002-06-26 | Raytheon Company | Bake-stable HgCdTe photodetector and method for fabricating same |
US5384267A (en) * | 1993-10-19 | 1995-01-24 | Texas Instruments Incorporated | Method of forming infrared detector by hydrogen plasma etching to form refractory metal interconnects |
US5436450A (en) * | 1994-01-13 | 1995-07-25 | Texas Instruments Incorporated | Infrared detector local biasing structure and method |
US5485010A (en) * | 1994-01-13 | 1996-01-16 | Texas Instruments Incorporated | Thermal isolation structure for hybrid thermal imaging system |
US5426304A (en) * | 1994-01-13 | 1995-06-20 | Texas Instruments Incorporated | Infrared detector thermal isolation structure and method |
US6133570A (en) * | 1994-03-15 | 2000-10-17 | Lockheed Martin Corporation | Semiconductor photovoltaic diffractive resonant optical cavity infrared detector |
US5593902A (en) * | 1994-05-23 | 1997-01-14 | Texas Instruments Incorporated | Method of making photodiodes for low dark current operation having geometric enhancement |
US5559332A (en) * | 1994-11-04 | 1996-09-24 | Texas Instruments Incorporated | Thermal detector and method |
US5742089A (en) * | 1995-06-07 | 1998-04-21 | Hughes Electronics | Growth of low dislocation density HGCDTE detector structures |
US5708269A (en) * | 1995-08-15 | 1998-01-13 | Raytheon Ti Systems, Inc. | Thermal detector and method |
US5627377A (en) * | 1995-09-07 | 1997-05-06 | Santa Barbara Research Center | Single carrier-type solid-state radiation detector device |
US6018414A (en) * | 1996-03-04 | 2000-01-25 | Raytheon Company | Dual band infrared lens assembly using diffractive optics |
US5852516A (en) * | 1996-03-04 | 1998-12-22 | Raytheon Ti Systems, Inc. | Dual purpose infrared lens assembly using diffractive optics |
US6249374B1 (en) | 1996-03-04 | 2001-06-19 | Raytheon Company | Wide field of view infrared zoom lens assembly having a constant F/number |
US6036770A (en) * | 1996-04-04 | 2000-03-14 | Raytheon Company | Method of fabricating a laterally continuously graded mercury cadmium telluride layer |
US6091127A (en) * | 1997-04-02 | 2000-07-18 | Raytheon Company | Integrated infrared detection system |
US6133615A (en) * | 1998-04-13 | 2000-10-17 | Wisconsin Alumni Research Foundation | Photodiode arrays having minimized cross-talk between diodes |
DE10037103A1 (en) * | 2000-07-27 | 2002-02-14 | Aeg Infrarot Module Gmbh | Multispectral photodiode |
FR2829616B1 (en) * | 2001-09-10 | 2004-03-12 | St Microelectronics Sa | VERTICAL LOW CAPACITY DIODE |
US7135698B2 (en) * | 2002-12-05 | 2006-11-14 | Lockheed Martin Corporation | Multi-spectral infrared super-pixel photodetector and imager |
US6897447B2 (en) * | 2002-12-05 | 2005-05-24 | Lockheed Martin Corporation | Bias controlled multi-spectral infrared photodetector and imager |
FR2868602B1 (en) * | 2004-04-05 | 2006-05-26 | Commissariat Energie Atomique | PHOTON DETECTION CIRCUIT WITH MESA STRUCTURE |
KR101671552B1 (en) * | 2009-06-05 | 2016-11-01 | 내셔날 인스티튜트 오브 어드밴스드 인더스트리얼 사이언스 앤드 테크놀로지 | Sensor, semiconductor substrate, and method for manufacturing semiconductor substrate |
US8686471B2 (en) * | 2011-04-28 | 2014-04-01 | Drs Rsta, Inc. | Minority carrier based HgCdTe infrared detectors and arrays |
US20150319390A1 (en) * | 2014-04-30 | 2015-11-05 | Sandia Corporation | Stacked and tiled focal plane array |
FR3021807B1 (en) * | 2014-05-27 | 2017-09-29 | Commissariat A L Energie Atomique Et Aux Energies Alternatives | IMPROVED FTM MESA PHOTODIOD MATRIX MATRIX |
CN106847958B (en) * | 2016-12-07 | 2018-09-11 | 同方威视技术股份有限公司 | Photodiode device and photodiode detector |
CN110931577B (en) * | 2019-11-11 | 2021-12-31 | 中国科学院上海技术物理研究所 | Artificial microstructure with longitudinally-graded plasmon enhanced infrared wide-spectrum absorption |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4110778A (en) * | 1977-06-21 | 1978-08-29 | The United States Of America As Represented By The Secretary Of The Air Force | Narrow-band inverted homo-heterojunction avalanche photodiode |
US4206003A (en) * | 1977-07-05 | 1980-06-03 | Honeywell Inc. | Method of forming a mercury cadmium telluride photodiode |
US4183035A (en) * | 1978-06-26 | 1980-01-08 | Rockwell International Corporation | Inverted heterojunction photodiode |
GB2095898B (en) * | 1981-03-27 | 1985-01-09 | Philips Electronic Associated | Methods of manufacturing a detector device |
EP0068652B1 (en) * | 1981-06-24 | 1988-05-25 | The Secretary of State for Defence in Her Britannic Majesty's Government of the United Kingdom of Great Britain and | Photo diodes |
US4447291A (en) * | 1983-08-31 | 1984-05-08 | Texas Instruments Incorporated | Method for via formation in HgCdTe |
-
1986
- 1986-05-05 US US06/859,674 patent/US4639756A/en not_active Expired - Lifetime
-
1987
- 1987-03-30 JP JP62503071A patent/JPH0728049B2/en not_active Expired - Fee Related
- 1987-03-30 WO PCT/US1987/000676 patent/WO1987007083A1/en not_active Application Discontinuation
- 1987-03-30 EP EP87903482A patent/EP0264437A1/en not_active Ceased
- 1987-04-10 IL IL82182A patent/IL82182A/en unknown
Also Published As
Publication number | Publication date |
---|---|
WO1987007083A1 (en) | 1987-11-19 |
US4639756A (en) | 1987-01-27 |
JPH0728049B2 (en) | 1995-03-29 |
EP0264437A1 (en) | 1988-04-27 |
IL82182A0 (en) | 1987-10-30 |
JPS63503266A (en) | 1988-11-24 |
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