IL68435A - Crucible for production of monocrystals by the hanging drop method - Google Patents

Crucible for production of monocrystals by the hanging drop method

Info

Publication number
IL68435A
IL68435A IL68435A IL6843583A IL68435A IL 68435 A IL68435 A IL 68435A IL 68435 A IL68435 A IL 68435A IL 6843583 A IL6843583 A IL 6843583A IL 68435 A IL68435 A IL 68435A
Authority
IL
Israel
Prior art keywords
monocrystals
crucible
production
drop method
hanging drop
Prior art date
Application number
IL68435A
Other languages
English (en)
Other versions
IL68435A0 (en
Original Assignee
Ugine Kuhlmann
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ugine Kuhlmann filed Critical Ugine Kuhlmann
Publication of IL68435A0 publication Critical patent/IL68435A0/xx
Publication of IL68435A publication Critical patent/IL68435A/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/08—Downward pulling
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/007—Pulling on a substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/91—Downward pulling
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1052—Seed pulling including a sectioned crucible [e.g., double crucible, baffle]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
IL68435A 1982-06-11 1983-04-19 Crucible for production of monocrystals by the hanging drop method IL68435A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8210174A FR2528454A1 (fr) 1982-06-11 1982-06-11 Creuset modifie pour la methode de cristallisation par goutte pendante

Publications (2)

Publication Number Publication Date
IL68435A0 IL68435A0 (en) 1983-07-31
IL68435A true IL68435A (en) 1986-08-31

Family

ID=9274876

Family Applications (1)

Application Number Title Priority Date Filing Date
IL68435A IL68435A (en) 1982-06-11 1983-04-19 Crucible for production of monocrystals by the hanging drop method

Country Status (8)

Country Link
US (1) US4495155A (fr)
JP (1) JPS593095A (fr)
CH (1) CH651325A5 (fr)
DE (1) DE3321201C2 (fr)
FR (1) FR2528454A1 (fr)
GB (1) GB2122104A (fr)
IL (1) IL68435A (fr)
IT (1) IT8367646A0 (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2556095B1 (fr) * 1983-12-02 1986-09-05 Philips Ind Commerciale Procede automatique de dosage d'echantillon et machine automatique pour doser et analyser
US5157240A (en) * 1989-09-13 1992-10-20 Chow Loren A Deposition heaters
US5031229A (en) * 1989-09-13 1991-07-09 Chow Loren A Deposition heaters
US5085582A (en) * 1990-07-24 1992-02-04 Eaton Corporation Silicon nitride containers for the sintering of silicon nitride ceramics
US6402834B1 (en) * 1998-05-29 2002-06-11 Toyo Communication Equipment Co., Ltd. Apparatus and method for manufacturing monocrystals
JP4597619B2 (ja) * 2003-12-26 2010-12-15 シルトロニック・ジャパン株式会社 シリコン結晶育成用るつぼ及びシリコン結晶の育成方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB337995A (en) * 1928-11-27 1930-11-13 Vaw Ver Aluminium Werke Ag Improvements in and relating to the electrolytic production of aluminium
US3598282A (en) * 1969-11-25 1971-08-10 Henry A Phillips Apparatus for melting and feeding solidified material
DE2137088A1 (de) * 1970-07-28 1972-02-10 Philips Nv Verfahren zum Herstellen von Kristallen
FR2321326A1 (fr) * 1975-08-08 1977-03-18 Ugine Kuhlmann Procede de fabrication en continu de monocristaux preformes
FR2359639A2 (fr) * 1976-07-27 1978-02-24 Ugine Kuhlmann Dispositif pour fabriquer des tubes et des ensembles de petits cylindres monocristallins
DE2635373C2 (de) * 1975-08-08 1982-04-15 PCUK-Produits Chimiques Ugine Kuhlmann, 92400 Courbevoie, Hauts-de-Seine Verfahren und Vorrichtung zur kontinuierlichen Züchtung von Einkristallen bestimmter Form
FR2376697A2 (fr) * 1977-01-11 1978-08-04 Ugine Kuhlmann Dispositif de fabrication en continu de monocristaux preformes en forme de plaques
FR2401696A1 (fr) * 1977-08-31 1979-03-30 Ugine Kuhlmann Methode de depot de silicium cristallin en films minces sur substrats graphites
US4394006A (en) * 1982-04-07 1983-07-19 Electric Power Research Institute, Inc. Molten metal flow control

Also Published As

Publication number Publication date
DE3321201A1 (de) 1983-12-15
GB2122104A (en) 1984-01-11
IL68435A0 (en) 1983-07-31
IT8367646A0 (it) 1983-06-10
DE3321201C2 (de) 1986-08-21
GB8313893D0 (en) 1983-06-22
FR2528454A1 (fr) 1983-12-16
FR2528454B1 (fr) 1984-11-23
CH651325A5 (fr) 1985-09-13
JPS593095A (ja) 1984-01-09
US4495155A (en) 1985-01-22

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