IL48418A - Charge storage diode for light actuated devices - Google Patents
Charge storage diode for light actuated devicesInfo
- Publication number
- IL48418A IL48418A IL48418A IL4841875A IL48418A IL 48418 A IL48418 A IL 48418A IL 48418 A IL48418 A IL 48418A IL 4841875 A IL4841875 A IL 4841875A IL 48418 A IL48418 A IL 48418A
- Authority
- IL
- Israel
- Prior art keywords
- region
- layer
- light
- cds
- defect
- Prior art date
Links
- 238000003860 storage Methods 0.000 title claims description 31
- 229910052980 cadmium sulfide Inorganic materials 0.000 claims description 92
- 230000004044 response Effects 0.000 claims description 33
- 230000007547 defect Effects 0.000 claims description 30
- 239000000758 substrate Substances 0.000 claims description 26
- 238000010521 absorption reaction Methods 0.000 claims description 22
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical group OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 claims description 21
- 230000003595 spectral effect Effects 0.000 claims description 21
- 230000006798 recombination Effects 0.000 claims description 20
- 238000005215 recombination Methods 0.000 claims description 16
- 239000004065 semiconductor Substances 0.000 claims description 16
- 230000035945 sensitivity Effects 0.000 claims description 15
- 230000003287 optical effect Effects 0.000 claims description 12
- 238000000151 deposition Methods 0.000 claims description 9
- 238000004544 sputter deposition Methods 0.000 claims description 9
- 238000010893 electron trap Methods 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 8
- 230000008021 deposition Effects 0.000 claims description 7
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 claims description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 6
- 239000000956 alloy Substances 0.000 claims description 6
- 229910045601 alloy Inorganic materials 0.000 claims description 6
- 229910000037 hydrogen sulfide Inorganic materials 0.000 claims description 6
- 230000006872 improvement Effects 0.000 claims description 5
- 238000005275 alloying Methods 0.000 claims description 4
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 claims description 4
- 230000008020 evaporation Effects 0.000 claims description 4
- 238000001704 evaporation Methods 0.000 claims description 4
- 230000008859 change Effects 0.000 claims description 3
- 239000002800 charge carrier Substances 0.000 claims description 3
- 230000009977 dual effect Effects 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- 239000012535 impurity Substances 0.000 claims 1
- 239000010408 film Substances 0.000 description 63
- 239000004973 liquid crystal related substance Substances 0.000 description 31
- 229910004613 CdTe Inorganic materials 0.000 description 23
- 230000005516 deep trap Effects 0.000 description 14
- 230000000694 effects Effects 0.000 description 12
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 230000008901 benefit Effects 0.000 description 7
- 230000000903 blocking effect Effects 0.000 description 7
- 239000003990 capacitor Substances 0.000 description 7
- 238000002347 injection Methods 0.000 description 7
- 239000007924 injection Substances 0.000 description 7
- 230000031700 light absorption Effects 0.000 description 6
- 239000004020 conductor Substances 0.000 description 5
- 230000007423 decrease Effects 0.000 description 5
- 238000003949 trap density measurement Methods 0.000 description 5
- 238000004458 analytical method Methods 0.000 description 4
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 230000003247 decreasing effect Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000011669 selenium Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 206010034972 Photosensitivity reaction Diseases 0.000 description 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000000691 measurement method Methods 0.000 description 2
- 230000036211 photosensitivity Effects 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 125000003748 selenium group Chemical group *[Se]* 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 238000012795 verification Methods 0.000 description 2
- VVNCNSJFMMFHPL-VKHMYHEASA-N D-penicillamine Chemical compound CC(C)(S)[C@@H](N)C(O)=O VVNCNSJFMMFHPL-VKHMYHEASA-N 0.000 description 1
- 101100342039 Halobacterium salinarum (strain ATCC 29341 / DSM 671 / R1) kdpQ gene Proteins 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000035559 beat frequency Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 210000004027 cell Anatomy 0.000 description 1
- 210000002858 crystal cell Anatomy 0.000 description 1
- 238000013480 data collection Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 229940075911 depen Drugs 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000013213 extrapolation Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910000058 selane Inorganic materials 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN heterojunction type
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/135—Liquid crystal cells structurally associated with a photoconducting or a ferro-electric layer, the properties of which can be optically or electrically varied
- G02F1/1354—Liquid crystal cells structurally associated with a photoconducting or a ferro-electric layer, the properties of which can be optically or electrically varied having a particular photoconducting structure or material
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Optics & Photonics (AREA)
- Light Receiving Elements (AREA)
- Illuminated Signs And Luminous Advertising (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US52459674A | 1974-11-18 | 1974-11-18 | |
| US05/625,331 US3976361A (en) | 1974-11-18 | 1975-10-22 | Charge storage diode with graded defect density photocapacitive layer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| IL48418A0 IL48418A0 (en) | 1976-01-30 |
| IL48418A true IL48418A (en) | 1977-03-31 |
Family
ID=27061549
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IL48418A IL48418A (en) | 1974-11-18 | 1975-11-04 | Charge storage diode for light actuated devices |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US3976361A (xx) |
| JP (1) | JPS5234911B2 (xx) |
| CA (1) | CA1036258A (xx) |
| DE (1) | DE2550933C2 (xx) |
| FR (1) | FR2291611A1 (xx) |
| GB (1) | GB1492289A (xx) |
| IL (1) | IL48418A (xx) |
| IT (1) | IT1052257B (xx) |
| NL (1) | NL168953C (xx) |
Families Citing this family (33)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4032954A (en) * | 1976-06-01 | 1977-06-28 | Hughes Aircraft Company | Silicon single crystal charge storage diode |
| US4106853A (en) * | 1976-07-28 | 1978-08-15 | Hughes Aircraft Company | Method and apparatus for increasing contrast ratio of the stored image in a storage mode light valve |
| US4114991A (en) * | 1976-12-22 | 1978-09-19 | Hughes Aircraft Company | Visible-to-infrared converter light valve |
| US4206979A (en) * | 1977-03-28 | 1980-06-10 | Grumman Aerospace Corporation | Electro-optic modulator |
| US4093357A (en) * | 1977-04-05 | 1978-06-06 | Hughes Aircraft Company | Cermet interface for electro-optical devices |
| IL54544A0 (en) * | 1977-05-02 | 1978-07-31 | Hughes Aircraft Co | Liquid crystal light valve |
| GB1604206A (en) * | 1977-06-20 | 1981-12-02 | Hughes Aircraft Co | Ac driven liquid crystal light valve |
| US4191454A (en) * | 1977-06-20 | 1980-03-04 | Hughes Aircraft Company | Continuous silicon MOS AC light valve substrate |
| JPS5464494A (en) * | 1977-10-31 | 1979-05-24 | Sharp Corp | Liquid crystal display unit |
| US4371232A (en) * | 1977-12-27 | 1983-02-01 | The United States Of America As Represented By The Secretary Of The Navy | Graded gap semiconductor optical device |
| US4191452A (en) * | 1977-12-28 | 1980-03-04 | Hughes Aircraft Company | AC silicon PN junction photodiode light-valve substrate |
| US4443064A (en) * | 1979-11-30 | 1984-04-17 | Hughes Aircraft Company | High resolution AC silicon MOS-light-valve substrate |
| US4344668A (en) * | 1980-03-17 | 1982-08-17 | Hughes Aircraft Company | Fiber optic light traps for electro-optical display devices |
| US4522469A (en) * | 1984-01-09 | 1985-06-11 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Liquid crystal light valve structures |
| US4679910A (en) * | 1985-03-20 | 1987-07-14 | Hughes Aircraft Company | Dual liquid-crystal cell-based visible-to-infrared dynamic image converter |
| US4707077A (en) * | 1986-01-30 | 1987-11-17 | Hughes Aircraft Company | Real time image subtraction with a single liquid crystal light valve |
| US4925276A (en) * | 1987-05-01 | 1990-05-15 | Electrohome Limited | Liquid crystal light valve utilizing hydrogenated amorphous silicon photodiode |
| US4799773A (en) * | 1987-08-27 | 1989-01-24 | Hughes Aircraft Company | Liquid crystal light valve and associated bonding structure |
| GB8901666D0 (en) * | 1989-01-26 | 1989-03-15 | Audas Robert D | Signal spectrum |
| WO1991014962A1 (en) * | 1990-03-20 | 1991-10-03 | Everex Systems, Inc. | High performance light valve having a bilayer photoconductor structure |
| US5153761A (en) * | 1990-03-20 | 1992-10-06 | Everex Systems, Inc. | High performance light valve having double layer photoconductor |
| JPH0833549B2 (ja) * | 1990-04-27 | 1996-03-29 | シャープ株式会社 | 光書き込み型液晶表示素子 |
| US5153759A (en) * | 1991-04-01 | 1992-10-06 | Xerox Corporation | Optically addressed light valve system |
| JP2809543B2 (ja) * | 1992-03-10 | 1998-10-08 | シャープ株式会社 | 光導電型液晶ライトバルブ |
| JPH0643482A (ja) * | 1992-07-24 | 1994-02-18 | Matsushita Electric Ind Co Ltd | 空間光変調素子およびその製造方法 |
| US5309262A (en) * | 1992-12-23 | 1994-05-03 | Xerox Corporation | Optically addressed light valve system with two dielectric mirrors separated by a light separating element |
| AU3894595A (en) * | 1994-11-08 | 1996-05-31 | Spectra Science Corporation | Semiconductor nanocrystal display materials and display apparatus employing same |
| US5903247A (en) * | 1996-07-19 | 1999-05-11 | The Regents Of The University Of California | Servo controlled liquid crystal windows |
| US6005692A (en) * | 1997-05-29 | 1999-12-21 | Stahl; Thomas D. | Light-emitting diode constructions |
| DE10061743A1 (de) * | 2000-01-17 | 2001-07-19 | Siemens Ag | Verfahren zur Verbesserung der optischen Trennung von Leuchtstoffschichten |
| US7203234B1 (en) | 2000-03-31 | 2007-04-10 | Sharp Laboratories Of America, Inc. | Method of directional filtering for post-processing compressed video |
| US7361406B2 (en) * | 2003-04-29 | 2008-04-22 | Qi Wang | Ultra-high current density thin-film Si diode |
| KR100560309B1 (ko) * | 2003-12-31 | 2006-03-14 | 동부아남반도체 주식회사 | 씨모스 이미지 센서 및 그 광 칼라 감도 감지 방법 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3824002A (en) * | 1972-12-04 | 1974-07-16 | Hughes Aircraft Co | Alternating current liquid crystal light value |
-
1975
- 1975-10-22 US US05/625,331 patent/US3976361A/en not_active Expired - Lifetime
- 1975-11-04 IL IL48418A patent/IL48418A/en unknown
- 1975-11-13 DE DE2550933A patent/DE2550933C2/de not_active Expired
- 1975-11-14 IT IT52212/75A patent/IT1052257B/it active
- 1975-11-17 CA CA239,818A patent/CA1036258A/en not_active Expired
- 1975-11-17 FR FR7535089A patent/FR2291611A1/fr active Granted
- 1975-11-17 GB GB47279/75A patent/GB1492289A/en not_active Expired
- 1975-11-18 JP JP13784675A patent/JPS5234911B2/ja not_active Expired
- 1975-11-18 NL NLAANVRAGE7513484,A patent/NL168953C/xx not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| GB1492289A (en) | 1977-11-16 |
| JPS51102482A (xx) | 1976-09-09 |
| IT1052257B (it) | 1981-06-20 |
| JPS5234911B2 (xx) | 1977-09-06 |
| DE2550933A1 (de) | 1976-05-26 |
| NL168953C (nl) | 1982-05-17 |
| NL7513484A (nl) | 1976-05-20 |
| DE2550933C2 (de) | 1983-10-27 |
| FR2291611B1 (xx) | 1977-12-16 |
| FR2291611A1 (fr) | 1976-06-11 |
| US3976361A (en) | 1976-08-24 |
| CA1036258A (en) | 1978-08-08 |
| NL168953B (nl) | 1981-12-16 |
| IL48418A0 (en) | 1976-01-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US3976361A (en) | Charge storage diode with graded defect density photocapacitive layer | |
| JP2762808B2 (ja) | 空間光変調素子および投写型ディスプレイ装置 | |
| US4032954A (en) | Silicon single crystal charge storage diode | |
| Jackson et al. | Energy dependence of the carrier mobility-lifetime product in hydrogenated amorphous silicon | |
| US5291036A (en) | Amorphous silicon sensor | |
| Spear et al. | Photogeneration of charge carriers and related optical properties in orthorhombic sulphur | |
| Wronski et al. | The influence of carrier generation and collection on short-circuit currents in amorphous silicon solar cells | |
| US4228449A (en) | Semiconductor diode array liquid crystal device | |
| EP0029679B1 (en) | Photoelectric device | |
| Fraas et al. | ac photoresponse of a large‐area imaging CdS/CdTe heterojunction | |
| Fraas et al. | Novel charge‐storage‐diode structure for use with light‐activated displays | |
| RU2281531C2 (ru) | Полупроводниковый элемент-детектор излучения | |
| US4772933A (en) | Method for compensating operationally-induced defects and semiconductor device made thereby | |
| US3825807A (en) | High gain barrier layer solid state devices | |
| Tomita et al. | Properties of sputter-deposited CdS/CdTe heterojunction photodiode | |
| US5359186A (en) | Particle detector for detecting ionizing particles having a potential barrier formed in a region of defects | |
| JP3202574B2 (ja) | 光書込み型液晶素子 | |
| Nascetti et al. | Amorphous silicon phototransistor as nonlinear optical device for high dynamic range imagers | |
| Smith et al. | Photoinduced Discharge Characteristics of Cadmium Sulfide Binder Layers in the Xerographic Mode | |
| EP0070682B1 (en) | Method of producing a semiconductor layer of amorphous silicon and a device including such a layer | |
| JP4172881B2 (ja) | 撮像デバイスとその動作方法 | |
| Stupp et al. | The Plumbicon® | |
| JPS5884457A (ja) | 長尺薄膜読取装置 | |
| Chopra et al. | Optoelectronic Applications | |
| Kempter et al. | Influence of transparent electrodes on image sensor performance |