IL298818A - Actinic beam-sensitive or radiation-sensitive resin preparation, resistant layer, method for creating a pattern and method for producing an electronic device and compound - Google Patents

Actinic beam-sensitive or radiation-sensitive resin preparation, resistant layer, method for creating a pattern and method for producing an electronic device and compound

Info

Publication number
IL298818A
IL298818A IL298818A IL29881822A IL298818A IL 298818 A IL298818 A IL 298818A IL 298818 A IL298818 A IL 298818A IL 29881822 A IL29881822 A IL 29881822A IL 298818 A IL298818 A IL 298818A
Authority
IL
Israel
Prior art keywords
group
formula
compound
represented
acid
Prior art date
Application number
IL298818A
Other languages
English (en)
Hebrew (he)
Original Assignee
Fujifilm Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Publication of IL298818A publication Critical patent/IL298818A/en

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D251/00—Heterocyclic compounds containing 1,3,5-triazine rings
    • C07D251/02—Heterocyclic compounds containing 1,3,5-triazine rings not condensed with other rings
    • C07D251/12—Heterocyclic compounds containing 1,3,5-triazine rings not condensed with other rings having three double bonds between ring members or between ring members and non-ring members
    • C07D251/26—Heterocyclic compounds containing 1,3,5-triazine rings not condensed with other rings having three double bonds between ring members or between ring members and non-ring members with only hetero atoms directly attached to ring carbon atoms
    • C07D251/30—Only oxygen atoms
    • C07D251/32—Cyanuric acid; Isocyanuric acid
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C309/00—Sulfonic acids; Halides, esters, or anhydrides thereof
    • C07C309/01—Sulfonic acids
    • C07C309/02—Sulfonic acids having sulfo groups bound to acyclic carbon atoms
    • C07C309/03—Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton
    • C07C309/07—Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing oxygen atoms bound to the carbon skeleton
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C309/00—Sulfonic acids; Halides, esters, or anhydrides thereof
    • C07C309/01—Sulfonic acids
    • C07C309/02—Sulfonic acids having sulfo groups bound to acyclic carbon atoms
    • C07C309/03—Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton
    • C07C309/17—Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing carboxyl groups bound to the carbon skeleton
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C309/00—Sulfonic acids; Halides, esters, or anhydrides thereof
    • C07C309/63—Esters of sulfonic acids
    • C07C309/64—Esters of sulfonic acids having sulfur atoms of esterified sulfo groups bound to acyclic carbon atoms
    • C07C309/65—Esters of sulfonic acids having sulfur atoms of esterified sulfo groups bound to acyclic carbon atoms of a saturated carbon skeleton
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C311/00—Amides of sulfonic acids, i.e. compounds having singly-bound oxygen atoms of sulfo groups replaced by nitrogen atoms, not being part of nitro or nitroso groups
    • C07C311/01—Sulfonamides having sulfur atoms of sulfonamide groups bound to acyclic carbon atoms
    • C07C311/02—Sulfonamides having sulfur atoms of sulfonamide groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton
    • C07C311/09—Sulfonamides having sulfur atoms of sulfonamide groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton the carbon skeleton being further substituted by at least two halogen atoms
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C311/00—Amides of sulfonic acids, i.e. compounds having singly-bound oxygen atoms of sulfo groups replaced by nitrogen atoms, not being part of nitro or nitroso groups
    • C07C311/48—Amides of sulfonic acids, i.e. compounds having singly-bound oxygen atoms of sulfo groups replaced by nitrogen atoms, not being part of nitro or nitroso groups having nitrogen atoms of sulfonamide groups further bound to another hetero atom
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C311/00—Amides of sulfonic acids, i.e. compounds having singly-bound oxygen atoms of sulfo groups replaced by nitrogen atoms, not being part of nitro or nitroso groups
    • C07C311/50—Compounds containing any of the groups, X being a hetero atom, Y being any atom
    • C07C311/52—Y being a hetero atom
    • C07C311/53—X and Y not being nitrogen atoms, e.g. N-sulfonylcarbamic acid
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C381/00—Compounds containing carbon and sulfur and having functional groups not covered by groups C07C301/00 - C07C337/00
    • C07C381/12—Sulfonium compounds
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D207/00—Heterocyclic compounds containing five-membered rings not condensed with other rings, with one nitrogen atom as the only ring hetero atom
    • C07D207/46—Heterocyclic compounds containing five-membered rings not condensed with other rings, with one nitrogen atom as the only ring hetero atom with hetero atoms directly attached to the ring nitrogen atom
    • C07D207/48—Sulfur atoms
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D211/00—Heterocyclic compounds containing hydrogenated pyridine rings, not condensed with other rings
    • C07D211/92—Heterocyclic compounds containing hydrogenated pyridine rings, not condensed with other rings with a hetero atom directly attached to the ring nitrogen atom
    • C07D211/96—Sulfur atom
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
IL298818A 2020-06-10 2021-05-19 Actinic beam-sensitive or radiation-sensitive resin preparation, resistant layer, method for creating a pattern and method for producing an electronic device and compound IL298818A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020101009 2020-06-10
JP2020208293 2020-12-16
PCT/JP2021/018992 WO2021251086A1 (ja) 2020-06-10 2021-05-19 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、電子デバイスの製造方法、化合物

Publications (1)

Publication Number Publication Date
IL298818A true IL298818A (en) 2023-02-01

Family

ID=78845962

Family Applications (1)

Application Number Title Priority Date Filing Date
IL298818A IL298818A (en) 2020-06-10 2021-05-19 Actinic beam-sensitive or radiation-sensitive resin preparation, resistant layer, method for creating a pattern and method for producing an electronic device and compound

Country Status (8)

Country Link
US (1) US12585187B2 (https=)
EP (1) EP4166537A4 (https=)
JP (1) JP7545473B2 (https=)
KR (1) KR102819497B1 (https=)
CN (1) CN115997167B (https=)
IL (1) IL298818A (https=)
TW (1) TWI869596B (https=)
WO (1) WO2021251086A1 (https=)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111788525B (zh) * 2018-02-28 2023-08-08 富士胶片株式会社 感光化射线性或感放射线性树脂组合物、抗蚀剂膜、图案形成方法、电子器件的制造方法、树脂
EP4129975A4 (en) * 2020-03-30 2023-12-13 FUJIFILM Corporation ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, PATTERN FORMATION METHOD, RESIST FILM, AND PRODUCTION METHOD FOR ELECTRONIC DEVICE
JP7666264B2 (ja) * 2021-09-24 2025-04-22 信越化学工業株式会社 化学増幅レジスト組成物及びパターン形成方法
JP7739928B2 (ja) 2021-10-15 2025-09-17 信越化学工業株式会社 光酸発生剤、化学増幅レジスト組成物及びパターン形成方法
KR20230092100A (ko) * 2021-12-16 2023-06-26 주식회사 동진쎄미켐 염 화합물 및 이를 포함하는 산확산 억제제, 포토레지스트 조성물
JP7333842B2 (ja) * 2022-01-21 2023-08-25 東京応化工業株式会社 レジスト組成物、レジストパターン形成方法、及び、化合物
JP7779249B2 (ja) * 2022-01-27 2025-12-03 信越化学工業株式会社 レジスト材料及びパターン形成方法
JP7722257B2 (ja) * 2022-05-10 2025-08-13 信越化学工業株式会社 マスクブランク、レジストパターン形成方法及び化学増幅ポジ型レジスト組成物
WO2024190204A1 (ja) * 2023-03-14 2024-09-19 Jsr株式会社 感放射線性組成物及びパターン形成方法
JP2025009938A (ja) * 2023-07-04 2025-01-20 信越化学工業株式会社 オニウム塩、化学増幅ポジ型レジスト組成物及びレジストパターン形成方法
WO2025115477A1 (ja) * 2023-11-28 2025-06-05 サンアプロ株式会社 スルホニウム塩及び酸発生剤
WO2025142991A1 (ja) * 2023-12-28 2025-07-03 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、電子デバイスの製造方法、及び化合物

Family Cites Families (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63117077A (ja) * 1986-11-05 1988-05-21 Ricoh Co Ltd 水性インク
JP5746818B2 (ja) 2008-07-09 2015-07-08 富士フイルム株式会社 感活性光線性または感放射線性樹脂組成物及びそれを用いたパターン形成方法
US20100136477A1 (en) 2008-12-01 2010-06-03 Ng Edward W Photosensitive Composition
JP2013061648A (ja) 2011-09-09 2013-04-04 Rohm & Haas Electronic Materials Llc フォトレジスト上塗り組成物および電子デバイスを形成する方法
KR102075960B1 (ko) 2012-03-14 2020-02-11 제이에스알 가부시끼가이샤 포토레지스트 조성물, 레지스트 패턴 형성 방법, 산 확산 제어제 및 화합물
JP6002430B2 (ja) * 2012-05-08 2016-10-05 東京応化工業株式会社 レジスト組成物、レジストパターン形成方法、化合物
JP5850873B2 (ja) 2012-07-27 2016-02-03 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、それを用いたレジスト膜、パターン形成方法、及び電子デバイスの製造方法
JP5836299B2 (ja) 2012-08-20 2015-12-24 富士フイルム株式会社 パターン形成方法、感電子線性又は感極紫外線性樹脂組成物、及びレジスト膜、並びに、これらを用いた電子デバイスの製造方法
JP6031369B2 (ja) * 2013-01-31 2016-11-24 富士フイルム株式会社 パターン形成方法、及び電子デバイスの製造方法
JP6002705B2 (ja) 2013-03-01 2016-10-05 富士フイルム株式会社 パターン形成方法、感活性光線性又は感放射線性樹脂組成物、レジスト膜、及び、電子デバイスの製造方法
JP6458361B2 (ja) * 2013-06-17 2019-01-30 住友化学株式会社 塩、酸発生剤、レジスト組成物及びレジストパターンの製造方法
JP5676021B2 (ja) 2014-01-06 2015-02-25 富士フイルム株式会社 感活性光線性または感放射線性樹脂組成物及びそれを用いたパターン形成方法
EP2998297A1 (en) * 2014-09-18 2016-03-23 Heraeus Materials Korea Corporation Photo-acid generating compounds, compositions comprising said compounds, composite and process for making said composite as well as uses of said compounds
US9644056B2 (en) 2015-02-18 2017-05-09 Sumitomo Chemical Company, Limited Compound, resin and photoresist composition
JP6518475B2 (ja) 2015-03-20 2019-05-22 東京応化工業株式会社 レジスト組成物、レジストパターン形成方法、酸発生剤及び化合物
JP6520524B2 (ja) * 2015-07-28 2019-05-29 信越化学工業株式会社 レジスト材料及びパターン形成方法
JP6650509B2 (ja) 2016-03-07 2020-02-19 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、電子デバイスの製造方法
CN109477660A (zh) 2016-07-27 2019-03-15 瑞福可制造有限公司 水处理装置
JP6974981B2 (ja) * 2016-09-06 2021-12-01 住友化学株式会社 塩、レジスト組成物及びレジストパターンの製造方法
KR102212884B1 (ko) * 2016-09-26 2021-02-08 후지필름 가부시키가이샤 구멍이 뚫린 금속박의 제조 방법
KR102469463B1 (ko) * 2017-03-17 2022-11-22 후지필름 가부시키가이샤 감활성광선성 또는 감방사선성 수지 조성물, 레지스트막, 패턴 형성 방법, 및 전자 디바이스의 제조 방법
KR102395705B1 (ko) 2017-04-21 2022-05-09 후지필름 가부시키가이샤 Euv광용 감광성 조성물, 패턴 형성 방법, 전자 디바이스의 제조 방법
JP7135457B2 (ja) 2017-07-07 2022-09-13 住友化学株式会社 塩、酸発生剤、レジスト組成物及びレジストパターンの製造方法
JP7076473B2 (ja) * 2017-12-27 2022-05-27 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、電子デバイスの製造方法、化合物
KR102537251B1 (ko) 2018-06-28 2023-05-26 후지필름 가부시키가이샤 감활성광선성 또는 감방사선성 수지 조성물, 패턴 형성 방법, 전자 디바이스의 제조 방법, 수지
JP7076570B2 (ja) 2018-09-25 2022-05-27 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、電子デバイスの製造方法
CN113168098B (zh) * 2019-01-28 2024-03-29 富士胶片株式会社 感光化射线性或感辐射线性树脂组合物、抗蚀剂膜、图案形成方法及电子器件的制造方法
JP7232847B2 (ja) * 2019-01-28 2023-03-03 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、電子デバイスの製造方法
TWI836094B (zh) * 2019-06-21 2024-03-21 日商富士軟片股份有限公司 感光化射線性或感放射線性樹脂組合物、光阻膜、圖案形成方法、電子裝置之製造方法
KR102665652B1 (ko) * 2019-06-28 2024-05-21 후지필름 가부시키가이샤 감활성광선성 또는 감방사선성 수지 조성물의 제조 방법, 패턴 형성 방법, 전자 디바이스의 제조 방법
WO2021039244A1 (ja) * 2019-08-26 2021-03-04 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、パターン形成方法、レジスト膜、電子デバイスの製造方法
EP4129975A4 (en) * 2020-03-30 2023-12-13 FUJIFILM Corporation ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, PATTERN FORMATION METHOD, RESIST FILM, AND PRODUCTION METHOD FOR ELECTRONIC DEVICE
JP7389892B2 (ja) * 2020-03-31 2023-11-30 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、感活性光線性又は感放射線性膜、パターン形成方法、及び電子デバイスの製造方法
WO2022270230A1 (ja) * 2021-06-22 2022-12-29 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、電子デバイスの製造方法
JP7793407B2 (ja) * 2022-02-10 2026-01-05 古河電気工業株式会社 半導体レーザ素子
JP2025117077A (ja) 2024-01-30 2025-08-12 住商モンブラン株式会社 上衣

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