IL291350B2 - בדיקת מסכה לייצור דגימות מוליכים למחצה - Google Patents
בדיקת מסכה לייצור דגימות מוליכים למחצהInfo
- Publication number
- IL291350B2 IL291350B2 IL291350A IL29135022A IL291350B2 IL 291350 B2 IL291350 B2 IL 291350B2 IL 291350 A IL291350 A IL 291350A IL 29135022 A IL29135022 A IL 29135022A IL 291350 B2 IL291350 B2 IL 291350B2
- Authority
- IL
- Israel
- Prior art keywords
- defect
- images
- focus
- image
- bank
- Prior art date
Links
- 238000007689 inspection Methods 0.000 title claims description 42
- 239000004065 semiconductor Substances 0.000 title claims description 18
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 230000007547 defect Effects 0.000 claims description 178
- 238000000034 method Methods 0.000 claims description 44
- 239000002131 composite material Substances 0.000 claims description 31
- 238000005259 measurement Methods 0.000 claims description 29
- 238000006073 displacement reaction Methods 0.000 claims description 14
- 230000002950 deficient Effects 0.000 claims description 11
- 238000013461 design Methods 0.000 claims description 8
- 238000012795 verification Methods 0.000 claims description 7
- 238000009826 distribution Methods 0.000 claims description 6
- 238000012545 processing Methods 0.000 claims description 5
- 230000003287 optical effect Effects 0.000 claims description 3
- 230000004044 response Effects 0.000 claims description 3
- 238000003860 storage Methods 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 7
- 238000001514 detection method Methods 0.000 description 4
- 230000010354 integration Effects 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
- G06T7/00—Image analysis
- G06T7/0002—Inspection of images, e.g. flaw detection
- G06T7/0004—Industrial image inspection
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
- G06T7/00—Image analysis
- G06T7/0002—Inspection of images, e.g. flaw detection
- G06T7/0004—Industrial image inspection
- G06T7/001—Industrial image inspection using an image reference approach
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/01—Arrangements or apparatus for facilitating the optical investigation
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
- G03F1/84—Inspecting
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
- G06T7/00—Image analysis
- G06T7/10—Segmentation; Edge detection
- G06T7/13—Edge detection
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
- G06T7/00—Image analysis
- G06T7/30—Determination of transform parameters for the alignment of images, i.e. image registration
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/01—Arrangements or apparatus for facilitating the optical investigation
- G01N2021/0106—General arrangement of respective parts
- G01N2021/0112—Apparatus in one mechanical, optical or electronic block
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
- G01N2021/95676—Masks, reticles, shadow masks
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
- G06T2207/00—Indexing scheme for image analysis or image enhancement
- G06T2207/30—Subject of image; Context of image processing
- G06T2207/30108—Industrial image inspection
- G06T2207/30148—Semiconductor; IC; Wafer
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Computer Vision & Pattern Recognition (AREA)
- Biochemistry (AREA)
- Immunology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Pathology (AREA)
- General Health & Medical Sciences (AREA)
- Health & Medical Sciences (AREA)
- Quality & Reliability (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Pharmaceuticals Containing Other Organic And Inorganic Compounds (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Length Measuring Devices By Optical Means (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IL291350A IL291350B2 (he) | 2022-03-14 | 2022-03-14 | בדיקת מסכה לייצור דגימות מוליכים למחצה |
TW112103644A TW202407638A (zh) | 2022-03-14 | 2023-02-02 | 半導體樣品製造的遮罩檢查 |
KR1020230031114A KR20230134442A (ko) | 2022-03-14 | 2023-03-09 | 반도체 시편 제조를 위한 마스크 검사 |
CN202310257817.6A CN116754580A (zh) | 2022-03-14 | 2023-03-10 | 半导体样品制造的掩模检查 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IL291350A IL291350B2 (he) | 2022-03-14 | 2022-03-14 | בדיקת מסכה לייצור דגימות מוליכים למחצה |
Publications (3)
Publication Number | Publication Date |
---|---|
IL291350A IL291350A (he) | 2022-04-01 |
IL291350B1 IL291350B1 (he) | 2023-02-01 |
IL291350B2 true IL291350B2 (he) | 2023-06-01 |
Family
ID=87202470
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IL291350A IL291350B2 (he) | 2022-03-14 | 2022-03-14 | בדיקת מסכה לייצור דגימות מוליכים למחצה |
Country Status (4)
Country | Link |
---|---|
KR (1) | KR20230134442A (he) |
CN (1) | CN116754580A (he) |
IL (1) | IL291350B2 (he) |
TW (1) | TW202407638A (he) |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20110194752A1 (en) * | 2010-02-05 | 2011-08-11 | Linyong Pang | Extending the Field of View of a Mask-Inspection Image |
US20140086475A1 (en) * | 2012-09-24 | 2014-03-27 | Kla-Tencor Corporation | Model-Based Registration and Critical Dimension Metrology |
US20170018064A1 (en) * | 2015-07-13 | 2017-01-19 | Carl Zeiss Smt Gmbh | Method and apparatus for determining the position of structure elements of a photolithographic mask |
US20180293720A1 (en) * | 2017-04-07 | 2018-10-11 | Nuflare Technology, Inc. | Pattern inspection apparatus, pattern position measurement apparatus, aerial image measurement system, method for measuring aerial image,pattern position repairing apparatus, method for repairing pattern position, aerial image data processing apparatus, method for processing aerial image data, pattern exposure apparatus, method for exposing pattern, method for manufacturing mask, and mask manufacturing system |
US20180342051A1 (en) * | 2017-05-23 | 2018-11-29 | Kla-Tencor Corporation | Wafer inspection using difference images |
US20190130552A1 (en) * | 2017-10-30 | 2019-05-02 | Samsung Electronics Co., Ltd. | Methods of inspecting defect and methods of fabricating a semiconductor device using the same |
US20210073963A1 (en) * | 2019-09-11 | 2021-03-11 | Applied Materials Israel Ltd. | Mask inspection of a semiconductor specimen |
-
2022
- 2022-03-14 IL IL291350A patent/IL291350B2/he unknown
-
2023
- 2023-02-02 TW TW112103644A patent/TW202407638A/zh unknown
- 2023-03-09 KR KR1020230031114A patent/KR20230134442A/ko unknown
- 2023-03-10 CN CN202310257817.6A patent/CN116754580A/zh active Pending
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20110194752A1 (en) * | 2010-02-05 | 2011-08-11 | Linyong Pang | Extending the Field of View of a Mask-Inspection Image |
US20140086475A1 (en) * | 2012-09-24 | 2014-03-27 | Kla-Tencor Corporation | Model-Based Registration and Critical Dimension Metrology |
US20170018064A1 (en) * | 2015-07-13 | 2017-01-19 | Carl Zeiss Smt Gmbh | Method and apparatus for determining the position of structure elements of a photolithographic mask |
US20180293720A1 (en) * | 2017-04-07 | 2018-10-11 | Nuflare Technology, Inc. | Pattern inspection apparatus, pattern position measurement apparatus, aerial image measurement system, method for measuring aerial image,pattern position repairing apparatus, method for repairing pattern position, aerial image data processing apparatus, method for processing aerial image data, pattern exposure apparatus, method for exposing pattern, method for manufacturing mask, and mask manufacturing system |
US20180342051A1 (en) * | 2017-05-23 | 2018-11-29 | Kla-Tencor Corporation | Wafer inspection using difference images |
US20190130552A1 (en) * | 2017-10-30 | 2019-05-02 | Samsung Electronics Co., Ltd. | Methods of inspecting defect and methods of fabricating a semiconductor device using the same |
US20210073963A1 (en) * | 2019-09-11 | 2021-03-11 | Applied Materials Israel Ltd. | Mask inspection of a semiconductor specimen |
Also Published As
Publication number | Publication date |
---|---|
KR20230134442A (ko) | 2023-09-21 |
CN116754580A (zh) | 2023-09-15 |
TW202407638A (zh) | 2024-02-16 |
IL291350B1 (he) | 2023-02-01 |
IL291350A (he) | 2022-04-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR102329153B1 (ko) | 두 개의 포토마스크의 비교에 의한 포토마스크의 검사 | |
TWI618977B (zh) | Mask inspection method and mask inspection device | |
KR101855243B1 (ko) | 메트롤로지 방법 및 장치, 리소그래피 시스템 및 디바이스 제조 방법 | |
US10572990B2 (en) | Pattern inspection apparatus, pattern position measurement apparatus, aerial image measurement system, method for measuring aerial image, pattern position repairing apparatus, method for repairing pattern position, aerial image data processing apparatus, method for processing aerial image data, pattern exposure apparatus, method for exposing pattern, method for manufacturing mask, and mask manufacturing system | |
JP4940056B2 (ja) | リソグラフィマスク用の検査方法及び装置 | |
KR101768493B1 (ko) | 마스크 검사 장치, 마스크 평가 방법 및 마스크 평가 시스템 | |
JP5238718B2 (ja) | レチクル上のリソグラフィにおいて有意な欠陥を検出する方法 | |
JP6609568B2 (ja) | 差分ダイおよび差分データベースを利用した検査 | |
KR102496148B1 (ko) | 반도체 웨이퍼 검사를 위한 방법 및 그 시스템 | |
WO2018015181A1 (en) | Method of predicting patterning defects caused by overlay error | |
JP5192795B2 (ja) | 電子ビーム測定装置 | |
US6327033B1 (en) | Detection of phase defects on photomasks by differential imaging | |
CN115427893A (zh) | 从图像中去除伪影 | |
CN109491210A (zh) | 一种用于检测光刻图案的缺陷的方法 | |
CN112561873A (zh) | 一种基于机器学习的cdsem图像虚拟测量方法 | |
IL291350B2 (he) | בדיקת מסכה לייצור דגימות מוליכים למחצה | |
Vacca et al. | 100-nm defect detection using an existing image acquistion system | |
JP2004119476A (ja) | 位置検出方法および位置検出装置 | |
JP2023041623A (ja) | 半導体試料製造のためのマスク検査 | |
JP2005301156A (ja) | マスク欠陥検査方法、マスク欠陥検査装置、並びにマスク検査基準作成方法 | |
US20040165763A1 (en) | Method for inspection of periodic grating structures on lithography masks | |
US20230131950A1 (en) | Mask inspection for semiconductor specimen fabrication | |
CN116152155A (zh) | 用于半导体样本制造的掩模检查 | |
US20240231247A1 (en) | Metrology method and apparatus | |
CN117853395A (zh) | 检查晶片缺陷的方法及系统 |