IL291350B2 - בדיקת מסכה לייצור דגימות מוליכים למחצה - Google Patents

בדיקת מסכה לייצור דגימות מוליכים למחצה

Info

Publication number
IL291350B2
IL291350B2 IL291350A IL29135022A IL291350B2 IL 291350 B2 IL291350 B2 IL 291350B2 IL 291350 A IL291350 A IL 291350A IL 29135022 A IL29135022 A IL 29135022A IL 291350 B2 IL291350 B2 IL 291350B2
Authority
IL
Israel
Prior art keywords
defect
images
focus
image
bank
Prior art date
Application number
IL291350A
Other languages
English (en)
Other versions
IL291350B1 (he
IL291350A (he
Original Assignee
Applied Materials Israel Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Israel Ltd filed Critical Applied Materials Israel Ltd
Priority to IL291350A priority Critical patent/IL291350B2/he
Publication of IL291350A publication Critical patent/IL291350A/en
Publication of IL291350B1 publication Critical patent/IL291350B1/en
Priority to TW112103644A priority patent/TW202407638A/zh
Priority to KR1020230031114A priority patent/KR20230134442A/ko
Priority to CN202310257817.6A priority patent/CN116754580A/zh
Publication of IL291350B2 publication Critical patent/IL291350B2/he

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/95Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956Inspecting patterns on the surface of objects
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06TIMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00Image analysis
    • G06T7/0002Inspection of images, e.g. flaw detection
    • G06T7/0004Industrial image inspection
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06TIMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00Image analysis
    • G06T7/0002Inspection of images, e.g. flaw detection
    • G06T7/0004Industrial image inspection
    • G06T7/001Industrial image inspection using an image reference approach
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/01Arrangements or apparatus for facilitating the optical investigation
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/95Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84Inspecting
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06TIMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00Image analysis
    • G06T7/10Segmentation; Edge detection
    • G06T7/13Edge detection
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06TIMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00Image analysis
    • G06T7/30Determination of transform parameters for the alignment of images, i.e. image registration
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/01Arrangements or apparatus for facilitating the optical investigation
    • G01N2021/0106General arrangement of respective parts
    • G01N2021/0112Apparatus in one mechanical, optical or electronic block
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/95Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956Inspecting patterns on the surface of objects
    • G01N2021/95676Masks, reticles, shadow masks
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06TIMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00Indexing scheme for image analysis or image enhancement
    • G06T2207/30Subject of image; Context of image processing
    • G06T2207/30108Industrial image inspection
    • G06T2207/30148Semiconductor; IC; Wafer

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Biochemistry (AREA)
  • Immunology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Pathology (AREA)
  • General Health & Medical Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Quality & Reliability (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Pharmaceuticals Containing Other Organic And Inorganic Compounds (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Length Measuring Devices By Optical Means (AREA)
IL291350A 2022-03-14 2022-03-14 בדיקת מסכה לייצור דגימות מוליכים למחצה IL291350B2 (he)

Priority Applications (4)

Application Number Priority Date Filing Date Title
IL291350A IL291350B2 (he) 2022-03-14 2022-03-14 בדיקת מסכה לייצור דגימות מוליכים למחצה
TW112103644A TW202407638A (zh) 2022-03-14 2023-02-02 半導體樣品製造的遮罩檢查
KR1020230031114A KR20230134442A (ko) 2022-03-14 2023-03-09 반도체 시편 제조를 위한 마스크 검사
CN202310257817.6A CN116754580A (zh) 2022-03-14 2023-03-10 半导体样品制造的掩模检查

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IL291350A IL291350B2 (he) 2022-03-14 2022-03-14 בדיקת מסכה לייצור דגימות מוליכים למחצה

Publications (3)

Publication Number Publication Date
IL291350A IL291350A (he) 2022-04-01
IL291350B1 IL291350B1 (he) 2023-02-01
IL291350B2 true IL291350B2 (he) 2023-06-01

Family

ID=87202470

Family Applications (1)

Application Number Title Priority Date Filing Date
IL291350A IL291350B2 (he) 2022-03-14 2022-03-14 בדיקת מסכה לייצור דגימות מוליכים למחצה

Country Status (4)

Country Link
KR (1) KR20230134442A (he)
CN (1) CN116754580A (he)
IL (1) IL291350B2 (he)
TW (1) TW202407638A (he)

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110194752A1 (en) * 2010-02-05 2011-08-11 Linyong Pang Extending the Field of View of a Mask-Inspection Image
US20140086475A1 (en) * 2012-09-24 2014-03-27 Kla-Tencor Corporation Model-Based Registration and Critical Dimension Metrology
US20170018064A1 (en) * 2015-07-13 2017-01-19 Carl Zeiss Smt Gmbh Method and apparatus for determining the position of structure elements of a photolithographic mask
US20180293720A1 (en) * 2017-04-07 2018-10-11 Nuflare Technology, Inc. Pattern inspection apparatus, pattern position measurement apparatus, aerial image measurement system, method for measuring aerial image,pattern position repairing apparatus, method for repairing pattern position, aerial image data processing apparatus, method for processing aerial image data, pattern exposure apparatus, method for exposing pattern, method for manufacturing mask, and mask manufacturing system
US20180342051A1 (en) * 2017-05-23 2018-11-29 Kla-Tencor Corporation Wafer inspection using difference images
US20190130552A1 (en) * 2017-10-30 2019-05-02 Samsung Electronics Co., Ltd. Methods of inspecting defect and methods of fabricating a semiconductor device using the same
US20210073963A1 (en) * 2019-09-11 2021-03-11 Applied Materials Israel Ltd. Mask inspection of a semiconductor specimen

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110194752A1 (en) * 2010-02-05 2011-08-11 Linyong Pang Extending the Field of View of a Mask-Inspection Image
US20140086475A1 (en) * 2012-09-24 2014-03-27 Kla-Tencor Corporation Model-Based Registration and Critical Dimension Metrology
US20170018064A1 (en) * 2015-07-13 2017-01-19 Carl Zeiss Smt Gmbh Method and apparatus for determining the position of structure elements of a photolithographic mask
US20180293720A1 (en) * 2017-04-07 2018-10-11 Nuflare Technology, Inc. Pattern inspection apparatus, pattern position measurement apparatus, aerial image measurement system, method for measuring aerial image,pattern position repairing apparatus, method for repairing pattern position, aerial image data processing apparatus, method for processing aerial image data, pattern exposure apparatus, method for exposing pattern, method for manufacturing mask, and mask manufacturing system
US20180342051A1 (en) * 2017-05-23 2018-11-29 Kla-Tencor Corporation Wafer inspection using difference images
US20190130552A1 (en) * 2017-10-30 2019-05-02 Samsung Electronics Co., Ltd. Methods of inspecting defect and methods of fabricating a semiconductor device using the same
US20210073963A1 (en) * 2019-09-11 2021-03-11 Applied Materials Israel Ltd. Mask inspection of a semiconductor specimen

Also Published As

Publication number Publication date
KR20230134442A (ko) 2023-09-21
CN116754580A (zh) 2023-09-15
TW202407638A (zh) 2024-02-16
IL291350B1 (he) 2023-02-01
IL291350A (he) 2022-04-01

Similar Documents

Publication Publication Date Title
KR102329153B1 (ko) 두 개의 포토마스크의 비교에 의한 포토마스크의 검사
TWI618977B (zh) Mask inspection method and mask inspection device
KR101855243B1 (ko) 메트롤로지 방법 및 장치, 리소그래피 시스템 및 디바이스 제조 방법
US10572990B2 (en) Pattern inspection apparatus, pattern position measurement apparatus, aerial image measurement system, method for measuring aerial image, pattern position repairing apparatus, method for repairing pattern position, aerial image data processing apparatus, method for processing aerial image data, pattern exposure apparatus, method for exposing pattern, method for manufacturing mask, and mask manufacturing system
JP4940056B2 (ja) リソグラフィマスク用の検査方法及び装置
KR101768493B1 (ko) 마스크 검사 장치, 마스크 평가 방법 및 마스크 평가 시스템
JP5238718B2 (ja) レチクル上のリソグラフィにおいて有意な欠陥を検出する方法
JP6609568B2 (ja) 差分ダイおよび差分データベースを利用した検査
KR102496148B1 (ko) 반도체 웨이퍼 검사를 위한 방법 및 그 시스템
WO2018015181A1 (en) Method of predicting patterning defects caused by overlay error
JP5192795B2 (ja) 電子ビーム測定装置
US6327033B1 (en) Detection of phase defects on photomasks by differential imaging
CN115427893A (zh) 从图像中去除伪影
CN109491210A (zh) 一种用于检测光刻图案的缺陷的方法
CN112561873A (zh) 一种基于机器学习的cdsem图像虚拟测量方法
IL291350B2 (he) בדיקת מסכה לייצור דגימות מוליכים למחצה
Vacca et al. 100-nm defect detection using an existing image acquistion system
JP2004119476A (ja) 位置検出方法および位置検出装置
JP2023041623A (ja) 半導体試料製造のためのマスク検査
JP2005301156A (ja) マスク欠陥検査方法、マスク欠陥検査装置、並びにマスク検査基準作成方法
US20040165763A1 (en) Method for inspection of periodic grating structures on lithography masks
US20230131950A1 (en) Mask inspection for semiconductor specimen fabrication
CN116152155A (zh) 用于半导体样本制造的掩模检查
US20240231247A1 (en) Metrology method and apparatus
CN117853395A (zh) 检查晶片缺陷的方法及系统