IL291350B2 - Mask inspection for semiconductor specimen fabrication - Google Patents
Mask inspection for semiconductor specimen fabricationInfo
- Publication number
- IL291350B2 IL291350B2 IL291350A IL29135022A IL291350B2 IL 291350 B2 IL291350 B2 IL 291350B2 IL 291350 A IL291350 A IL 291350A IL 29135022 A IL29135022 A IL 29135022A IL 291350 B2 IL291350 B2 IL 291350B2
- Authority
- IL
- Israel
- Prior art keywords
- defect
- images
- focus
- image
- bank
- Prior art date
Links
- 238000007689 inspection Methods 0.000 title claims description 42
- 239000004065 semiconductor Substances 0.000 title claims description 18
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 230000007547 defect Effects 0.000 claims description 178
- 238000000034 method Methods 0.000 claims description 44
- 239000002131 composite material Substances 0.000 claims description 31
- 238000005259 measurement Methods 0.000 claims description 29
- 238000006073 displacement reaction Methods 0.000 claims description 14
- 230000002950 deficient Effects 0.000 claims description 11
- 238000013461 design Methods 0.000 claims description 8
- 238000012795 verification Methods 0.000 claims description 7
- 238000009826 distribution Methods 0.000 claims description 6
- 238000012545 processing Methods 0.000 claims description 5
- 230000003287 optical effect Effects 0.000 claims description 3
- 230000004044 response Effects 0.000 claims description 3
- 238000003860 storage Methods 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 7
- 238000001514 detection method Methods 0.000 description 4
- 230000010354 integration Effects 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
- G06T7/00—Image analysis
- G06T7/0002—Inspection of images, e.g. flaw detection
- G06T7/0004—Industrial image inspection
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
- G06T7/00—Image analysis
- G06T7/0002—Inspection of images, e.g. flaw detection
- G06T7/0004—Industrial image inspection
- G06T7/001—Industrial image inspection using an image reference approach
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/01—Arrangements or apparatus for facilitating the optical investigation
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
- G03F1/84—Inspecting
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
- G06T7/00—Image analysis
- G06T7/10—Segmentation; Edge detection
- G06T7/13—Edge detection
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
- G06T7/00—Image analysis
- G06T7/30—Determination of transform parameters for the alignment of images, i.e. image registration
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/01—Arrangements or apparatus for facilitating the optical investigation
- G01N2021/0106—General arrangement of respective parts
- G01N2021/0112—Apparatus in one mechanical, optical or electronic block
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
- G01N2021/95676—Masks, reticles, shadow masks
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
- G06T2207/00—Indexing scheme for image analysis or image enhancement
- G06T2207/30—Subject of image; Context of image processing
- G06T2207/30108—Industrial image inspection
- G06T2207/30148—Semiconductor; IC; Wafer
Description
MASK INSPECTION FOR SEMICONDUCTOR SPECIMEN FABRICATION TECHNICAL FIELD id="p-1" id="p-1" id="p-1" id="p-1" id="p-1"
id="p-1"
[001] The presently disclosed subject matter relates, in general, to the field of mask inspection, and, more specifically, to defect detection and measurement with respect to a photomask.
BACKGROUND id="p-2" id="p-2" id="p-2" id="p-2" id="p-2"
id="p-2"
[002] Current demands for high density and performance associated with ultra large-scale integration of fabricated micro-electronic devices require submicron features, increased transistor and circuit speeds, and improved reliability. As semiconductor processes progress, pattern dimensions such as line width, and other types of critical dimensions, are continuously shrunken. Such demands require formation of device features with high precision and uniformity, which, in turn, necessitates careful monitoring of the fabrication process, including automated examination of the devices while they are still in the form of semiconductor wafers. id="p-3" id="p-3" id="p-3" id="p-3" id="p-3"
id="p-3"
[003] Semiconductor devices are often manufactured using photo lithographic masks (also referred to as photomasks, or masks, or reticles) in a photolithography process. The photolithography process is one of the principal processes in the manufacture of semiconductor devices, and comprises patterning a wafer's surface in accordance with the circuit design of the semiconductor devices to be produced. Such a circuit design is first patterned on a mask. Hence, in order to obtain operating semiconductor devices, the mask must be defect free. Masks are manufactured by means of a complex process, and can suffer from various defects and variations. id="p-4" id="p-4" id="p-4" id="p-4" id="p-4"
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[004] In addition, the mask is often used in a repeated manner to create many dies on the wafer. Thus, any defect on the mask will be repeated multiple times on the wafer and will cause multiple devices to be defective. Establishing a production-worthy process requires tight control of the overall lithography process, especially in view of the large scale of circuit integration and the decreasing size of semiconductor devices. id="p-5" id="p-5" id="p-5" id="p-5" id="p-5"
id="p-5"
[005] Various mask inspection methods have been developed and utilized. According to certain conventional techniques of designing and evaluating masks, the mask is created and used to expose therethrough a wafer, and then an inspection is 30 performed to determine whether the features/patterns of the mask have been transferred to the wafer according to the design. Any variations in the final printed features from the intended design may necessitate modifying the design, repairing the mask, creating a new mask, and/or exposing a new wafer. id="p-6" id="p-6" id="p-6" id="p-6" id="p-6"
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[006] Alternatively, a mask can be directly inspected using various mask inspection tools. The inspection process can include a plurality of inspection steps. During the manufacturing process of the mask, the inspection steps can be performed a multiplicity of times, for example after the manufacturing or processing of certain layers, or the like. Additionally or alternatively, each inspection step can be repeated multiple times, for example for different mask locations, or for the same mask locations with different inspection settings. id="p-7" id="p-7" id="p-7" id="p-7" id="p-7"
id="p-7"
[007] Mask inspection generally involves generating certain inspection output (e.g., images, signals, etc.) for a mask, by directing light or electrons to the mask, and detecting the light or electrons from the mask. Once the output has been generated, defect detection is typically performed by applying a defect detection method and/or algorithm to the output. Very often, the goal of inspection is to provide high sensitivity and accuracy to defect detection and/or related measurements on the mask.
SUMMARY id="p-8" id="p-8" id="p-8" id="p-8" id="p-8"
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[008] In accordance with certain aspects of the presently disclosed subject matter, there is provided a computerized system of inspecting a mask usable for fabricating a semiconductor specimen, the system comprising: an inspection tool configured to: provide an original defect image comprising one or more defective pixels representative of a defect candidate, and a location of the defect candidate on the mask; and acquire, based on the location, a bank of defect images of the defect candidate, and a bank of reference images at a plurality of focus levels throughout a focus process window, the bank of defect images comprising a set of defect images acquired at each focus level, and the bank of reference images comprising a set of reference images acquired at each focus level; and a processing and memory circuitry (PMC) operatively connected to the inspection tool and configured to: determine an optimal focus among the plurality of focus levels, and generate a composite defect image based on the set of defect images at the optimal focus; align the original defect image with the composite defect image to identify an area of one or more target pixels in the composite defect image corresponding to the one or more defective pixels; and for each focus level, provide, based on the area, a measurement indicative of displacement between the set of defect images and at least one reference image derived from the set of reference images at the focus level, thereby giving rise to a plurality of measurements corresponding to the plurality of focus levels. id="p-9" id="p-9" id="p-9" id="p-9" id="p-9"
id="p-9"
[009] In addition to the above features, the system according to this aspect of the presently disclosed subject matter can comprise one or more of features (i) to (xvi) listed below, in any desired combination or permutation which is technically possible: (i). The defect candidate is from a list of defect candidates selected from a defect map indicative of defect candidate distribution on the mask or part thereof. (ii). The inspection tool is further configured to calibrate a printing threshold (PT). The providing a measurement comprises applying the PT on the set of defect images and the set of reference images at the focus level, giving rise to a set of binary defect images and a set of binary reference images, and performing the measurement based on the set of binary defect images and the set of binary reference images. (iii). The bank of defect images and the bank of reference images are acquired by placing the defect candidate at an optimal position in a field of view (FOV) of the inspection tool, wherein the optimal position is selected to reduce at least noises caused by FOV distortion. (iv). The plurality of focus levels are predefined, based on a focus step size in accordance with accuracy and throughput requirements. (v). The plurality of focus levels further comprises one or more focus levels extending the focus process window. (vi). The optimal focus is determined by applying a focus measure on at least one defect image in the set of defect images at each focus level. (vii). The aligning further comprises verifying registrability of a pattern comprised in the composite defect image, and determining the area in the composite defect image based on the verification. 30 (viii). The verification of registrability comprises shifting the pattern to a set of directions with respective offsets to obtain a shifted set of images, performing image registration between the composite defect image and the shifted set of images and determining the registrability based on result of the image registration. (ix). The PMC is further configured to determine, for the bank of reference images, an optimal focus among the plurality of focus levels, and, in response to a shift between the optimal focus of the reference images and the optimal focus of the defect images, associate corresponding focus levels of the reference images and the defect images based on the shift. (x). The at least one reference image is a composite reference image generated by combining the set of reference images. (xi). The set of defect images consist of one defect image, and the composite defect image is the defect image. (xii). The providing a measurement comprises measuring a displacement in a difference image derived in said area between each defect image of the set of defect images and the at least one reference image, giving rise to a set of displacements corresponding to the set of defect images, and generating the measurement based on the set of displacements. (xiii). The mask is a multi-die mask, the bank of defect images is captured for the defect candidate located in an inspection die, and the bank of reference images is captured from a corresponding location in a reference die. (xiv). The mask is a single-die mask, and the bank of defect images and the bank of reference images are acquired from different areas in the same die that share a similar design pattern. (xv). The providing an original defect image, acquiring, determining, aligning, and providing a measurement, are repeated for one or more additional defect candidates from a list of defect candidates selected from a defect map indicative of defect candidate distribution on the mask or part thereof. (xvi). The inspection tool is an actinic inspection tool configured to emulate optical configuration of a lithographic tool usable for fabrication of the semiconductor specimen. id="p-10" id="p-10" id="p-10" id="p-10" id="p-10"
id="p-10"
[0010] In accordance with other aspects of the presently disclosed subject matter, there is provided a method of inspecting a mask usable for fabricating a semiconductor specimen, the method performed by a processing and memory circuitry (PMC) and comprising: obtaining, from an inspection tool: an original defect image comprising one or more defective pixels representative of a defect candidate, and a location of the defect candidate on the mask; and a bank of defect images of the defect candidate and a bank of reference images acquired based on the location at a plurality of focus levels throughout a focus process window, the bank of defect images comprising a set of defect images acquired at each focus level, and the bank of reference images comprising a set of reference images acquired at each focus level; and determining an optimal focus among the plurality of focus levels, and generating a composite defect image based on the set of defect images at the optimal focus; aligning the original defect image with the composite defect image to identify an area of one or more target pixels in the composite defect image corresponding to the one or more defective pixels; and for each focus level, providing, based on the area, a measurement indicative of displacement between the set of defect images and at least one reference image derived from the set of reference images at the focus level, thereby giving rise to a plurality of measurements corresponding to the plurality of focus levels. id="p-11" id="p-11" id="p-11" id="p-11" id="p-11"
id="p-11"
[0011] This aspect of the disclosed subject matter can comprise one or more of features (i) to (xvi) listed above with respect to the system, mutatis mutandis, in any desired combination or permutation which is technically possible. id="p-12" id="p-12" id="p-12" id="p-12" id="p-12"
id="p-12"
[0012] In accordance with other aspects of the presently disclosed subject matter, there is provided a non-transitory computer readable medium comprising instructions that, when executed by a computer, cause the computer to perform a method of inspecting a mask usable for fabricating a semiconductor specimen, the method comprising: obtaining, from an inspection tool: an original defect image comprising one or more defective pixels representative of a defect candidate, and a location of the defect candidate on the mask; and a bank of defect images of the defect candidate and a bank of reference images acquired based on the location at a plurality of focus levels throughout a focus process window, the bank of defect images comprising a set of defect images acquired at each focus level, and the bank of reference images comprising a set of reference images acquired at each focus level; and determining an optimal focus among the plurality of focus levels, and generating a composite defect image based on the set of defect images at the optimal focus; aligning the original defect image with the composite defect image to identify an area of one or more target pixels in the composite defect image corresponding to the one or more defective pixels; and for each focus level, providing, based on the area, a measurement indicative of displacement between the set of defect images and at least one reference image derived from the set of reference images at the focus level, thereby giving rise to a plurality of measurements corresponding to the plurality of focus levels. id="p-13" id="p-13" id="p-13" id="p-13" id="p-13"
id="p-13"
[0013] This aspect of the disclosed subject matter can comprise one or more of features (i) to (xvi) listed above with respect to the system, mutatis mutandis, in any desired combination or permutation which is technically possible.
BRIEF DESCRIPTION OF THE DRAWINGS id="p-14" id="p-14" id="p-14" id="p-14" id="p-14"
id="p-14"
[0014] In order to understand the disclosure and to see how it may be carried out in practice, embodiments will now be described, by way of non-limiting example only, with reference to the accompanying drawings, in which: id="p-15" id="p-15" id="p-15" id="p-15" id="p-15"
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[0015] Fig. 1 illustrates a functional block diagram of a mask inspection system in accordance with certain embodiments of the presently disclosed subject matter. id="p-16" id="p-16" id="p-16" id="p-16" id="p-16"
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[0016] Fig. 2illustrates a generalized flowchart of mask inspection for a mask usable for fabricating a semiconductor specimen in accordance with certain embodiments of the presently disclosed subject matter. id="p-17" id="p-17" id="p-17" id="p-17" id="p-17"
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[0017] Fig. 3 illustrates a preliminary process prior to the present mask inspection and EPD estimation process in accordance with certain embodiments of the presently disclosed subject matter. id="p-18" id="p-18" id="p-18" id="p-18" id="p-18"
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[0018] Fig. 4 illustrates a generalized flowchart of alignment between the original defect image and the composite defect image in accordance with certain embodiments of the presently disclosed subject matter. id="p-19" id="p-19" id="p-19" id="p-19" id="p-19"
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[0019] Fig. 5 illustrates a schematic illustration of an actinic inspection tool and a lithographic tool in accordance with certain embodiments of the presently disclosed subject matter. id="p-20" id="p-20" id="p-20" id="p-20" id="p-20"
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[0020] Fig. 6 is schematic illustration of an exemplified defect image and reference image for a given defect candidate on a mask in accordance with certain embodiments of the presently disclosed subject matter. id="p-21" id="p-21" id="p-21" id="p-21" id="p-21"
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[0021] Fig. 7 illustrates a bank of defect images and a bank of reference images acquired for a given defect candidate on a mask in accordance with certain embodiments of the presently disclosed subject matter. id="p-22" id="p-22" id="p-22" id="p-22" id="p-22"
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[0022] Fig. 8illustrates a set of defect images at an optimal focus in accordance with certain embodiments of the presently disclosed subject matter. id="p-23" id="p-23" id="p-23" id="p-23" id="p-23"
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[0023] Fig. 9 is a schematic illustration of verification of registrability of an exemplary pattern in accordance with certain embodiments of the presently disclosed subject matter. id="p-24" id="p-24" id="p-24" id="p-24" id="p-24"
id="p-24"
[0024] Fig. 10illustrates an example of an original defect image, a defect image in the bank of defect images, and a target area as identified in the defect image in accordance certain embodiments of the presently disclosed subject matter. id="p-25" id="p-25" id="p-25" id="p-25" id="p-25"
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[0025] Fig. 11 illustrates an example of a binary defect image, a binary reference image, and a difference image thereof in accordance certain embodiments of the presently disclosed subject matter. id="p-26" id="p-26" id="p-26" id="p-26" id="p-26"
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[0026] Fig. 12 is a schematic illustration of a generalized lithography and pattern transfer process based on a printing threshold in accordance with certain embodiments of the presently disclosed subject matter. id="p-27" id="p-27" id="p-27" id="p-27" id="p-27"
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[0027] Fig. 13 illustrates an example of EPD measurements on a binary difference image in accordance certain embodiments of the presently disclosed subject matter. id="p-28" id="p-28" id="p-28" id="p-28" id="p-28"
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[0028] Fig. 14illustrates an exemplary situation where the optimal focus 1102 of the bank of defect images is shifted from the optimal focus 1104 of the bank of reference images in accordance certain embodiments of the presently disclosed subject matter. id="p-29" id="p-29" id="p-29" id="p-29" id="p-29"
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[0029] Fig. 15 illustrates an exemplary plot representation of a plurality of EPD measurements corresponding to a plurality of focus levels in accordance certain embodiments of the presently disclosed subject matter.
Claims (35)
1. A computerized system of inspecting a mask usable for fabricating a semiconductor specimen, the system comprising: an inspection tool configured to: provide an original defect image resulting from a preliminary inspection of the mask and comprising one or more defective pixels representative of a defect candidate, and a location of the defect candidate on the mask; and acquire, based on the location, a bank of defect images of the defect candidate and a bank of reference images at a plurality of focus levels throughout a focus process window, the bank of defect images comprising a set of defect images acquired at each focus level, and the bank of reference images comprising a set of reference images acquired at each focus level; and a processing and memory circuitry (PMC) operatively connected to the inspection tool and configured to: determine an optimal focus among the plurality of focus levels, and generate a composite defect image based on the set of defect images at the optimal focus; align the original defect image with the composite defect image to identify an area of one or more target pixels in the composite defect image corresponding to the one or more defective pixels; and for each focus level, provide, based on the identified area, a measurement indicative of displacement between the set of defect images and at least one reference image derived from the set of reference images at the 21.9.20 291350/V - 2 - 02814795123- focus level, thereby giving rise to a plurality of measurements corresponding to the plurality of focus levels.
2. The computerized system according to claim 1, wherein the defect candidate is from a list of defect candidates selected from a defect map indicative of defect candidate distribution on the mask or part thereof.
3. The computerized system according to claim 1 or 2, wherein the inspection tool is further configured to calibrate a printing threshold (PT), and the providing a measurement comprises applying the PT on the set of defect images and the set of reference images at the focus level, giving rise to a set of binary defect images and a set of binary reference images, and performing the measurement based on the set of binary defect images and the set of binary reference images.
4. The computerized system according to any of the preceding claims, wherein the bank of defect images and the bank of reference images are acquired by placing the defect candidate at an optimal position in a field of view (FOV) of the inspection tool, wherein the optimal position is selected to reduce at least noises caused by FOV distortion.
5. The computerized system according to any of the preceding claims, wherein the plurality of focus levels are predefined based on a focus step size in accordance with accuracy and throughput requirements.
6. The computerized system according to any of the preceding claims, wherein the plurality of focus levels further comprises one or more focus levels extending the focus process window.
7. The computerized system according to any of the preceding claims, wherein the optimal focus is determined by applying a focus measure on at least one defect image in the set of defect images at each focus level.
8. The computerized system according to any of the preceding claims, wherein the aligning further comprises verifying registrability of a pattern comprised in the 21.9.20 291350/V - 3 - 02814795123- composite defect image, and determining the area in the composite defect image based on the verification.
9. The computerized system according to claim 8, wherein the verification of registrability comprises shifting the pattern to a set of directions with respective offsets to obtain a shifted set of images, performing image registration between the composite defect image and the shifted set of images, and determining the registrability based on result of the image registration.
10. The computerized system according to any of the preceding claims, wherein the PMC is further configured to determine, for the bank of reference images, an optimal focus among the plurality of focus levels, and, in response to a shift between the optimal focus of the reference images and the optimal focus of the defect images, associate corresponding focus levels of the reference images and the defect images based on the shift.
11. The computerized system according to any of the preceding claims, wherein the at least one reference image is a composite reference image generated by combining the set of reference images.
12. The computerized system according to any of the preceding claims, wherein the set of defect images consist of one defect image, and the composite defect image is the defect image.
13. The computerized system according to any of the preceding claims, wherein the providing a measurement comprises measuring a displacement in a difference image derived in said area between each defect image of the set of defect images and the at least one reference image, giving rise to a set of displacements corresponding to the set of defect images, and generating the measurement based on the set of displacements.
14. The computerized system according to any of the preceding claims, wherein the mask is a multi-die mask, the bank of defect images are captured for the defect 21.9.20 291350/V - 4 - 02814795123- candidate located in an inspection die, and the bank of reference images are captured from a corresponding location in a reference die.
15. The computerized system according to any of claims 1-13, wherein the mask is a single-die mask, and the bank of defect images and the bank of reference images are acquired from different areas in the same die that share a similar design pattern.
16. The computerized system according to any of the preceding claims, wherein the providing an original defect image, acquiring, determining, aligning, and providing a measurement, are repeated for one or more additional defect candidates from a list of defect candidates selected from a defect map indicative of defect candidate distribution on the mask or part thereof.
17. The computerized system according to any of the preceding claims, wherein the inspection tool is an actinic inspection tool configured to emulate optical configuration of a lithographic tool usable for fabrication of the semiconductor specimen.
18. A computerized method of inspecting a mask usable for fabricating a semiconductor specimen, the method performed by a processing and memory circuitry (PMC) and comprising: obtaining, from an inspection tool: an original defect image resulting from a preliminary inspection of the mask and comprising one or more defective pixels representative of a defect candidate, and a location of the defect candidate on the mask; and a bank of defect images of the defect candidate and a bank of reference images acquired based on the location at a plurality of focus levels throughout a focus process window, the bank of defect images comprising a set of defect images acquired at each focus level, and the bank of reference images comprising a set of reference images acquired at each focus level; and 21.9.20 291350/V - 5 - 02814795123- determining an optimal focus among the plurality of focus levels, and generating a composite defect image based on the set of defect images at the optimal focus; aligning the original defect image with the composite defect image to identify an area of one or more target pixels in the composite defect image corresponding to the one or more defective pixels; and for each focus level, providing, based on the identified area, a measurement indicative of displacement between the set of defect images and at least one reference image derived from the set of reference images at the focus level, thereby giving rise to a plurality of measurements corresponding to the plurality of focus levels.
19. The computerized method according to claim 18, wherein the defect candidate is from a list of defect candidates selected from a defect map indicative of defect candidate distribution on the mask or part thereof.
20. The computerized method according to claim 18 or 19, further comprising obtaining from the inspection tool a printing threshold (PT), and wherein the providing a measurement comprises applying the PT on the set of defect images and the set of reference images at the focus level, giving rise to a set of binary defect images and a set of binary reference images, and performing the measurement based on the set of binary defect images and the set of binary reference images.
21. The computerized method according to any of claims 18-20, wherein the bank of defect images and the bank of reference images are acquired by placing the defect candidate at an optimal position in a field of view (FOV) of the inspection tool, wherein the optimal position is selected to reduce at least noises caused by FOV distortion.
22. The computerized method according to any of claims 18-21, wherein the plurality of focus levels are predefined based on a focus step size in accordance with accuracy and throughput requirements. 21.9.20 291350/V - 6 - 02814795123-
23. The computerized method according to any of claims 18-22, wherein the plurality of focus levels further comprises one or more focus levels extending the focus process window.
24. The computerized method according to any of claims 18-23, wherein the optimal focus is determined by applying a focus measure on at least one defect image in the set of defect images at each focus level.
25. The computerized method according to any of claims 18-24, wherein the aligning further comprises verifying registrability of a pattern comprised in the composite defect image, and determining the area in the composite defect image based on the verification.
26. The computerized method according to claim 25, wherein the verification of registrability comprises shifting the pattern to a set of directions with respective offsets to obtain a shifted set of images, performing image registration between the composite defect image and the shifted set of images, and determining the registrability based on result of the image registration.
27. The computerized method according to any of claims 18-26, further comprising determining, for the bank of reference images, an optimal focus among the plurality of focus levels, and in response to a shift between the optimal focus of the reference images and the optimal focus of the defect images, associating corresponding focus levels of the reference images and the defect images based on the shift.
28. The computerized method according to any of claims 18-27, wherein the at least one reference image is a composite reference image generated by combining the set of reference images.
29. The computerized method according to any of claims 18-28, wherein the set of defect images consist of one defect image, and the composite defect image is the defect image.
30. The computerized method according to any of claims 18-29, wherein the providing a measurement comprises measuring a displacement in a difference image 21.9.20 291350/V - 7 - 02814795123- derived in said area between each defect image of the set of defect images and the at least one reference image, giving rise to a set of displacements corresponding to the set of defect images, and generating the measurement based on the set of displacements.
31. The computerized method according to any of claims 18-30, wherein the mask is a multi-die mask, the bank of defect images is captured for the defect candidate located in an inspection die, and the bank of reference images are captured from a corresponding location in a reference die.
32. The computerized method according to any of claims 18-30, wherein the mask is a single-die mask, and the bank of defect images and the bank of reference images are acquired from different areas in the same die that share a similar design pattern.
33. The computerized method according to any of claims 18-32, wherein the providing an original defect image, acquiring, determining, aligning, and providing a measurement, are repeated for one or more additional defect candidates from a list of defect candidates selected from a defect map indicative of defect candidate distribution on the mask or part thereof.
34. The computerized method according to any of claims 18-33, wherein the inspection tool is an actinic inspection tool configured to emulate optical configuration of a lithographic tool usable for fabrication of the semiconductor specimen.
35. A non-transitory computer readable storage medium tangibly embodying a program of instructions that, when executed by a computer, cause the computer to perform a method of any of claims 18-34.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IL291350A IL291350B2 (en) | 2022-03-14 | 2022-03-14 | Mask inspection for semiconductor specimen fabrication |
| KR1020230031114A KR20230134442A (en) | 2022-03-14 | 2023-03-09 | Mask inspection for semiconductor specimen fabrication |
| CN202310257817.6A CN116754580A (en) | 2022-03-14 | 2023-03-10 | Mask inspection for semiconductor sample fabrication |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IL291350A IL291350B2 (en) | 2022-03-14 | 2022-03-14 | Mask inspection for semiconductor specimen fabrication |
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| Publication Number | Publication Date |
|---|---|
| IL291350A IL291350A (en) | 2022-04-01 |
| IL291350B1 IL291350B1 (en) | 2023-02-01 |
| IL291350B2 true IL291350B2 (en) | 2023-06-01 |
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| IL291350A IL291350B2 (en) | 2022-03-14 | 2022-03-14 | Mask inspection for semiconductor specimen fabrication |
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| Country | Link |
|---|---|
| KR (1) | KR20230134442A (en) |
| CN (1) | CN116754580A (en) |
| IL (1) | IL291350B2 (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110194752A1 (en) * | 2010-02-05 | 2011-08-11 | Linyong Pang | Extending the Field of View of a Mask-Inspection Image |
| US20140086475A1 (en) * | 2012-09-24 | 2014-03-27 | Kla-Tencor Corporation | Model-Based Registration and Critical Dimension Metrology |
| US20170018064A1 (en) * | 2015-07-13 | 2017-01-19 | Carl Zeiss Smt Gmbh | Method and apparatus for determining the position of structure elements of a photolithographic mask |
| US20180293720A1 (en) * | 2017-04-07 | 2018-10-11 | Nuflare Technology, Inc. | Pattern inspection apparatus, pattern position measurement apparatus, aerial image measurement system, method for measuring aerial image,pattern position repairing apparatus, method for repairing pattern position, aerial image data processing apparatus, method for processing aerial image data, pattern exposure apparatus, method for exposing pattern, method for manufacturing mask, and mask manufacturing system |
| US20180342051A1 (en) * | 2017-05-23 | 2018-11-29 | Kla-Tencor Corporation | Wafer inspection using difference images |
| US20190130552A1 (en) * | 2017-10-30 | 2019-05-02 | Samsung Electronics Co., Ltd. | Methods of inspecting defect and methods of fabricating a semiconductor device using the same |
| US20210073963A1 (en) * | 2019-09-11 | 2021-03-11 | Applied Materials Israel Ltd. | Mask inspection of a semiconductor specimen |
-
2022
- 2022-03-14 IL IL291350A patent/IL291350B2/en unknown
-
2023
- 2023-03-09 KR KR1020230031114A patent/KR20230134442A/en unknown
- 2023-03-10 CN CN202310257817.6A patent/CN116754580A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110194752A1 (en) * | 2010-02-05 | 2011-08-11 | Linyong Pang | Extending the Field of View of a Mask-Inspection Image |
| US20140086475A1 (en) * | 2012-09-24 | 2014-03-27 | Kla-Tencor Corporation | Model-Based Registration and Critical Dimension Metrology |
| US20170018064A1 (en) * | 2015-07-13 | 2017-01-19 | Carl Zeiss Smt Gmbh | Method and apparatus for determining the position of structure elements of a photolithographic mask |
| US20180293720A1 (en) * | 2017-04-07 | 2018-10-11 | Nuflare Technology, Inc. | Pattern inspection apparatus, pattern position measurement apparatus, aerial image measurement system, method for measuring aerial image,pattern position repairing apparatus, method for repairing pattern position, aerial image data processing apparatus, method for processing aerial image data, pattern exposure apparatus, method for exposing pattern, method for manufacturing mask, and mask manufacturing system |
| US20180342051A1 (en) * | 2017-05-23 | 2018-11-29 | Kla-Tencor Corporation | Wafer inspection using difference images |
| US20190130552A1 (en) * | 2017-10-30 | 2019-05-02 | Samsung Electronics Co., Ltd. | Methods of inspecting defect and methods of fabricating a semiconductor device using the same |
| US20210073963A1 (en) * | 2019-09-11 | 2021-03-11 | Applied Materials Israel Ltd. | Mask inspection of a semiconductor specimen |
Also Published As
| Publication number | Publication date |
|---|---|
| IL291350B1 (en) | 2023-02-01 |
| KR20230134442A (en) | 2023-09-21 |
| IL291350A (en) | 2022-04-01 |
| CN116754580A (en) | 2023-09-15 |
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