IL281346B2 - Electron emitter is a metal-encased photocathode - Google Patents
Electron emitter is a metal-encased photocathodeInfo
- Publication number
- IL281346B2 IL281346B2 IL281346A IL28134621A IL281346B2 IL 281346 B2 IL281346 B2 IL 281346B2 IL 281346 A IL281346 A IL 281346A IL 28134621 A IL28134621 A IL 28134621A IL 281346 B2 IL281346 B2 IL 281346B2
- Authority
- IL
- Israel
- Prior art keywords
- protective film
- photocathode structure
- electron emitter
- photocathode
- substrate
- Prior art date
Links
- 229910052751 metal Inorganic materials 0.000 title claims description 17
- 239000002184 metal Substances 0.000 title claims description 17
- 230000001681 protective effect Effects 0.000 claims description 130
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 46
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 44
- 238000010894 electron beam technology Methods 0.000 claims description 34
- 238000000034 method Methods 0.000 claims description 27
- 239000000758 substrate Substances 0.000 claims description 27
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 22
- 229910052759 nickel Inorganic materials 0.000 claims description 22
- 229910052707 ruthenium Inorganic materials 0.000 claims description 22
- 229910052697 platinum Inorganic materials 0.000 claims description 19
- LYQFWZFBNBDLEO-UHFFFAOYSA-M caesium bromide Chemical compound [Br-].[Cs+] LYQFWZFBNBDLEO-UHFFFAOYSA-M 0.000 claims description 18
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 16
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 16
- 229910052804 chromium Inorganic materials 0.000 claims description 16
- 239000011651 chromium Substances 0.000 claims description 16
- 229910052802 copper Inorganic materials 0.000 claims description 16
- 239000010949 copper Substances 0.000 claims description 16
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 14
- 229910052782 aluminium Inorganic materials 0.000 claims description 14
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 14
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 14
- 229910052737 gold Inorganic materials 0.000 claims description 14
- 239000010931 gold Substances 0.000 claims description 14
- 229910052709 silver Inorganic materials 0.000 claims description 14
- 239000004332 silver Substances 0.000 claims description 14
- 229910045601 alloy Inorganic materials 0.000 claims description 13
- 239000000956 alloy Substances 0.000 claims description 13
- 230000005540 biological transmission Effects 0.000 claims description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 229910002601 GaN Inorganic materials 0.000 claims description 9
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 9
- XQPRBTXUXXVTKB-UHFFFAOYSA-M caesium iodide Inorganic materials [I-].[Cs+] XQPRBTXUXXVTKB-UHFFFAOYSA-M 0.000 claims description 9
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 claims description 9
- 150000002500 ions Chemical class 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 6
- 238000012856 packing Methods 0.000 claims description 6
- 238000000231 atomic layer deposition Methods 0.000 claims description 5
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 claims description 5
- 229910001634 calcium fluoride Inorganic materials 0.000 claims description 5
- 239000005350 fused silica glass Substances 0.000 claims description 5
- 229910001635 magnesium fluoride Inorganic materials 0.000 claims description 5
- 239000010453 quartz Substances 0.000 claims description 5
- 229910052594 sapphire Inorganic materials 0.000 claims description 5
- 239000010980 sapphire Substances 0.000 claims description 5
- 238000004544 sputter deposition Methods 0.000 claims description 5
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 description 21
- 238000007689 inspection Methods 0.000 description 13
- 210000002381 plasma Anatomy 0.000 description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 9
- 229910052799 carbon Inorganic materials 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 9
- 230000003647 oxidation Effects 0.000 description 8
- 238000007254 oxidation reaction Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 238000013500 data storage Methods 0.000 description 6
- 230000007547 defect Effects 0.000 description 6
- 229910000929 Ru alloy Inorganic materials 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 5
- 230000006870 function Effects 0.000 description 5
- 150000002739 metals Chemical class 0.000 description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 229910001260 Pt alloy Inorganic materials 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000012552 review Methods 0.000 description 3
- 239000003513 alkali Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 230000001010 compromised effect Effects 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910000599 Cr alloy Inorganic materials 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000013590 bulk material Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000000788 chromium alloy Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000007726 management method Methods 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- -1 oxides Chemical compound 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011253 protective coating Substances 0.000 description 1
- 238000003908 quality control method Methods 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/34—Photo-emissive cathodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
- H01J1/304—Field-emissive cathodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/32—Secondary-electron-emitting electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/06—Electron sources; Electron guns
- H01J37/073—Electron guns using field emission, photo emission, or secondary emission electron sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2201/00—Electrodes common to discharge tubes
- H01J2201/34—Photoemissive electrodes
- H01J2201/342—Cathodes
- H01J2201/3421—Composition of the emitting surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2201/00—Electrodes common to discharge tubes
- H01J2201/34—Photoemissive electrodes
- H01J2201/342—Cathodes
- H01J2201/3421—Composition of the emitting surface
- H01J2201/3423—Semiconductors, e.g. GaAs, NEA emitters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2201/00—Electrodes common to discharge tubes
- H01J2201/34—Photoemissive electrodes
- H01J2201/342—Cathodes
- H01J2201/3421—Composition of the emitting surface
- H01J2201/3425—Metals, metal alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2201/00—Electrodes common to discharge tubes
- H01J2201/34—Photoemissive electrodes
- H01J2201/342—Cathodes
- H01J2201/3421—Composition of the emitting surface
- H01J2201/3426—Alkaline metal compounds, e.g. Na-K-Sb
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/02—Details
- H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/063—Electron sources
- H01J2237/06325—Cold-cathode sources
- H01J2237/06333—Photo emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/26—Electron or ion microscopes
- H01J2237/28—Scanning microscopes
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Common Detailed Techniques For Electron Tubes Or Discharge Tubes (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201862732937P | 2018-09-18 | 2018-09-18 | |
| US16/259,317 US10714295B2 (en) | 2018-09-18 | 2019-01-28 | Metal encapsulated photocathode electron emitter |
| PCT/US2019/051372 WO2020060954A1 (en) | 2018-09-18 | 2019-09-17 | Metal encapsulated photocathode electron emitter |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| IL281346A IL281346A (en) | 2021-04-29 |
| IL281346B1 IL281346B1 (en) | 2024-04-01 |
| IL281346B2 true IL281346B2 (en) | 2024-08-01 |
Family
ID=69773104
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IL281346A IL281346B2 (en) | 2018-09-18 | 2019-09-17 | Electron emitter is a metal-encased photocathode |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US10714295B2 (enExample) |
| JP (1) | JP7185772B2 (enExample) |
| KR (1) | KR102545439B1 (enExample) |
| CN (2) | CN118263073A (enExample) |
| DE (1) | DE112019004659T5 (enExample) |
| IL (1) | IL281346B2 (enExample) |
| TW (1) | TWI800681B (enExample) |
| WO (1) | WO2020060954A1 (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11495428B2 (en) * | 2019-02-17 | 2022-11-08 | Kla Corporation | Plasmonic photocathode emitters at ultraviolet and visible wavelengths |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3706885A (en) * | 1971-01-29 | 1972-12-19 | Gen Electric | Photocathode-phosphor imaging system for x-ray camera tubes |
| US4008106A (en) * | 1975-11-13 | 1977-02-15 | The United States Of America As Represented By The Secretary Of The Army | Method of fabricating III-V photocathodes |
| US5684360A (en) * | 1995-07-10 | 1997-11-04 | Intevac, Inc. | Electron sources utilizing negative electron affinity photocathodes with ultra-small emission areas |
| US6005247A (en) | 1997-10-01 | 1999-12-21 | Intevac, Inc. | Electron beam microscope using electron beam patterns |
| KR100423849B1 (ko) * | 2001-09-11 | 2004-03-22 | 한국과학기술원 | 매우 얇은 보호막을 갖는 광음극 |
| US7015467B2 (en) | 2002-10-10 | 2006-03-21 | Applied Materials, Inc. | Generating electrons with an activated photocathode |
| WO2010017136A1 (en) | 2008-08-04 | 2010-02-11 | Amir Dassoud Dabiran | Microchannel plate photocathode |
| US10197501B2 (en) | 2011-12-12 | 2019-02-05 | Kla-Tencor Corporation | Electron-bombarded charge-coupled device and inspection systems using EBCCD detectors |
| US9601299B2 (en) * | 2012-08-03 | 2017-03-21 | Kla-Tencor Corporation | Photocathode including silicon substrate with boron layer |
| CN104561901A (zh) | 2013-10-22 | 2015-04-29 | 中国科学院上海硅酸盐研究所 | 一种掺铊的碘化铯复合薄膜及其制备方法 |
| US10748730B2 (en) * | 2015-05-21 | 2020-08-18 | Kla-Tencor Corporation | Photocathode including field emitter array on a silicon substrate with boron layer |
| US10141155B2 (en) | 2016-12-20 | 2018-11-27 | Kla-Tencor Corporation | Electron beam emitters with ruthenium coating |
| US10395884B2 (en) | 2017-10-10 | 2019-08-27 | Kla-Tencor Corporation | Ruthenium encapsulated photocathode electron emitter |
-
2019
- 2019-01-28 US US16/259,317 patent/US10714295B2/en active Active
- 2019-09-10 TW TW108132517A patent/TWI800681B/zh active
- 2019-09-17 KR KR1020217011219A patent/KR102545439B1/ko active Active
- 2019-09-17 CN CN202311361910.8A patent/CN118263073A/zh active Pending
- 2019-09-17 CN CN201980059591.0A patent/CN112673448A/zh active Pending
- 2019-09-17 JP JP2021514985A patent/JP7185772B2/ja active Active
- 2019-09-17 WO PCT/US2019/051372 patent/WO2020060954A1/en not_active Ceased
- 2019-09-17 DE DE112019004659.4T patent/DE112019004659T5/de active Pending
- 2019-09-17 IL IL281346A patent/IL281346B2/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| KR20210046820A (ko) | 2021-04-28 |
| CN118263073A (zh) | 2024-06-28 |
| US20200090895A1 (en) | 2020-03-19 |
| DE112019004659T5 (de) | 2021-06-17 |
| TW202025197A (zh) | 2020-07-01 |
| TWI800681B (zh) | 2023-05-01 |
| JP2022501772A (ja) | 2022-01-06 |
| IL281346B1 (en) | 2024-04-01 |
| JP7185772B2 (ja) | 2022-12-07 |
| US10714295B2 (en) | 2020-07-14 |
| WO2020060954A1 (en) | 2020-03-26 |
| CN112673448A (zh) | 2021-04-16 |
| IL281346A (en) | 2021-04-29 |
| KR102545439B1 (ko) | 2023-06-20 |
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