IL268480B - Testing light masks by comparing two light masks - Google Patents

Testing light masks by comparing two light masks

Info

Publication number
IL268480B
IL268480B IL268480A IL26848019A IL268480B IL 268480 B IL268480 B IL 268480B IL 268480 A IL268480 A IL 268480A IL 26848019 A IL26848019 A IL 26848019A IL 268480 B IL268480 B IL 268480B
Authority
IL
Israel
Prior art keywords
photomasks
inspection
comparing
Prior art date
Application number
IL268480A
Other languages
English (en)
Hebrew (he)
Other versions
IL268480A (en
Original Assignee
Kla Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kla Corp filed Critical Kla Corp
Publication of IL268480A publication Critical patent/IL268480A/en
Publication of IL268480B publication Critical patent/IL268480B/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G01N21/95607—Inspecting patterns on the surface of objects using a comparative method
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
    • G03F7/2063—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam for the production of exposure masks or reticles
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70508—Data handling in all parts of the microlithographic apparatus, e.g. handling pattern data for addressable masks or data transfer to or from different components within the exposure apparatus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/7065—Defects, e.g. optical inspection of patterned layer for defects
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706835—Metrology information management or control
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/0002—Inspection of images, e.g. flaw detection
    • G06T7/0004—Industrial image inspection
    • G06T7/001—Industrial image inspection using an image reference approach
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/27—Structural arrangements therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G01N2021/8887—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges based on image processing techniques
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G01N2021/95676—Masks, reticles, shadow masks
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/10—Image acquisition modality
    • G06T2207/10056—Microscopic image
    • G06T2207/10061—Microscopic image from scanning electron microscope
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/30—Subject of image; Context of image processing
    • G06T2207/30108—Industrial image inspection
    • G06T2207/30148—Semiconductor; IC; Wafer

Landscapes

  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Immunology (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Pathology (AREA)
  • Signal Processing (AREA)
  • Quality & Reliability (AREA)
  • Theoretical Computer Science (AREA)
  • Toxicology (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Manufacturing & Machinery (AREA)
  • Image Processing (AREA)
IL268480A 2017-02-21 2019-08-04 Testing light masks by comparing two light masks IL268480B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15/438,588 US10451563B2 (en) 2017-02-21 2017-02-21 Inspection of photomasks by comparing two photomasks
PCT/US2018/018578 WO2018156442A1 (en) 2017-02-21 2018-02-19 Inspection of photomasks by comparing two photomasks

Publications (2)

Publication Number Publication Date
IL268480A IL268480A (en) 2019-09-26
IL268480B true IL268480B (en) 2021-07-29

Family

ID=63167640

Family Applications (1)

Application Number Title Priority Date Filing Date
IL268480A IL268480B (en) 2017-02-21 2019-08-04 Testing light masks by comparing two light masks

Country Status (6)

Country Link
US (1) US10451563B2 (https=)
JP (1) JP7035069B2 (https=)
KR (1) KR102329153B1 (https=)
IL (1) IL268480B (https=)
TW (1) TWI760437B (https=)
WO (1) WO2018156442A1 (https=)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018180578A (ja) * 2017-04-03 2018-11-15 富士通株式会社 設計支援プログラム、情報処理装置、および設計支援方法
JP2018180875A (ja) * 2017-04-12 2018-11-15 富士通株式会社 判定装置、判定方法および判定プログラム
US10755405B2 (en) 2017-11-24 2020-08-25 Taiwan Semiconductor Manufacturing Co., Ltd. Method and system for diagnosing a semiconductor wafer
US11055464B2 (en) * 2018-08-14 2021-07-06 Taiwan Semiconductor Manufacturing Co., Ltd. Critical dimension uniformity
US10866197B2 (en) * 2018-09-20 2020-12-15 KLA Corp. Dispositioning defects detected on extreme ultraviolet photomasks
US11748874B2 (en) * 2018-10-15 2023-09-05 3M Innovative Properties Company Automated inspection for sheet parts of arbitrary shape from manufactured film
WO2020083612A1 (en) * 2018-10-23 2020-04-30 Asml Netherlands B.V. Method and apparatus for adaptive alignment
US11079672B2 (en) * 2018-10-31 2021-08-03 Taiwan Semiconductor Manufacturing Company Ltd. Method and system for layout enhancement based on inter-cell correlation
US10545099B1 (en) * 2018-11-07 2020-01-28 Kla-Tencor Corporation Ultra-high sensitivity hybrid inspection with full wafer coverage capability
JP2020148615A (ja) * 2019-03-13 2020-09-17 株式会社ニューフレアテクノロジー 参照画像生成方法およびパターン検査方法
US11442021B2 (en) * 2019-10-11 2022-09-13 Kla Corporation Broadband light interferometry for focal-map generation in photomask inspection
JP2022552195A (ja) * 2019-10-11 2022-12-15 アプライド マテリアルズ インコーポレイテッド ダイシステム及び位置合わせベクトルを比較する方法
CN110992322A (zh) * 2019-11-25 2020-04-10 创新奇智(青岛)科技有限公司 基于卷积神经网络的贴片掩膜检测系统及检测方法
US11293970B2 (en) * 2020-01-12 2022-04-05 Kla Corporation Advanced in-line part average testing
JP7405959B2 (ja) * 2020-04-17 2023-12-26 東レエンジニアリング先端半導体Ｍｉテクノロジー株式会社 パターンマッチング方法
US11379972B2 (en) * 2020-06-03 2022-07-05 Applied Materials Israel Ltd. Detecting defects in semiconductor specimens using weak labeling
KR102425392B1 (ko) * 2020-06-17 2022-07-28 주식회사 앤에이치씨 블랭크 마스크의 재활용 가능 여부를 판단하기 위한 블랭크 마스크 장치 및 방법
US11704471B2 (en) * 2020-09-16 2023-07-18 Synopsys, Inc. Three-dimensional mask simulations based on feature images
US11636587B2 (en) * 2020-12-30 2023-04-25 Applied Materials Israel Ltd. Inspection of a semiconductor specimen
US12481213B2 (en) 2021-09-02 2025-11-25 Synopsys, Inc. Mask corner rounding effects in three-dimensional mask simulations using feature images
US12474634B2 (en) 2021-11-18 2025-11-18 Synopsys, Inc. Mask synthesis integrating mask fabrication effects and wafer lithography effects
EP4449205A1 (en) * 2021-12-17 2024-10-23 ASML Netherlands B.V. Overlay metrology based on template matching with adaptive weighting
CN115965574B (zh) * 2022-08-31 2025-03-14 东方晶源微电子科技(北京)股份有限公司 基于设计版图的扫描电子显微镜图像缺陷检测方法、装置
JP2025541158A (ja) * 2022-12-08 2025-12-18 レイア、インコーポレイテッド 大判インプリントリソグラフィの方法及びインプリントリソグラフィモールド
US20250245815A1 (en) * 2024-01-31 2025-07-31 Kla Corporation Adaptive and robust detection of large defects and image misalignment

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5419664A (en) 1977-07-15 1979-02-14 Nippon Jidoseigyo Ltd Device for inspecting fault of pattern
DE69208413T2 (de) * 1991-08-22 1996-11-14 Kla Instr Corp Gerät zur automatischen Prüfung von Photomaske
US6064484A (en) 1996-03-13 2000-05-16 Fujitsu Limited Pattern inspection method and system
JP3639079B2 (ja) * 1996-03-13 2005-04-13 富士通株式会社 パターン検査方法と検査装置
JP3865156B2 (ja) * 1997-04-24 2007-01-10 株式会社ニコン 画像比較装置およびこれを用いたウエハ検査装置とウエハ検査システム
US6516085B1 (en) 1999-05-03 2003-02-04 Kla-Tencor Apparatus and methods for collecting global data during a reticle inspection
WO2002075793A2 (en) 2001-03-20 2002-09-26 Numerial Technologies, Inc. System and method of providing mask defect printability analysis
JP2004317975A (ja) * 2003-04-18 2004-11-11 Toshiba Corp フォトマスク及びこのフォトマスクを用いた半導体装置の製造方法
US7251033B1 (en) 2004-06-02 2007-07-31 Advanced Micro Devices, Inc. In-situ reticle contamination detection system at exposure wavelength
JP4928862B2 (ja) * 2006-08-04 2012-05-09 株式会社日立ハイテクノロジーズ 欠陥検査方法及びその装置
US7873204B2 (en) 2007-01-11 2011-01-18 Kla-Tencor Corporation Method for detecting lithographically significant defects on reticles
US8038897B2 (en) * 2007-02-06 2011-10-18 Taiwan Semiconductor Manufacturing Company, Ltd. Method and system for wafer inspection
US7738093B2 (en) 2007-05-07 2010-06-15 Kla-Tencor Corp. Methods for detecting and classifying defects on a reticle
KR20090074554A (ko) * 2008-01-02 2009-07-07 주식회사 하이닉스반도체 포토마스크의 결함 수정 방법
JP5229575B2 (ja) 2009-05-08 2013-07-03 ソニー株式会社 画像処理装置および方法、並びにプログラム
JPWO2011108619A1 (ja) 2010-03-01 2013-06-27 日本電気株式会社 パターンマッチング装置、パターンマッチング方法及びパターンマッチングシステム
JP4988000B2 (ja) * 2010-03-17 2012-08-01 株式会社東芝 パターン検査装置及びパターン検査方法
JP2011247957A (ja) 2010-05-24 2011-12-08 Toshiba Corp パターン検査方法および半導体装置の製造方法
US8818072B2 (en) * 2010-08-25 2014-08-26 Taiwan Semiconductor Manufacturing Company, Ltd. Rendered database image-to-inspection image optimization for inspection
WO2012148848A2 (en) * 2011-04-26 2012-11-01 Kla-Tencor Corporation Method and system for hybrid reticle inspection
US8914754B2 (en) 2011-04-26 2014-12-16 Kla-Tencor Corporation Database-driven cell-to-cell reticle inspection
US10401305B2 (en) * 2012-02-15 2019-09-03 Kla-Tencor Corporation Time-varying intensity map generation for reticles
JP6236216B2 (ja) * 2013-04-16 2017-11-22 株式会社ニューフレアテクノロジー 検査装置および検査方法
US9518935B2 (en) 2013-07-29 2016-12-13 Kla-Tencor Corporation Monitoring changes in photomask defectivity
JP6364193B2 (ja) * 2014-01-23 2018-07-25 株式会社ニューフレアテクノロジー 焦点位置調整方法および検査方法
JP2015145922A (ja) * 2014-01-31 2015-08-13 株式会社ニューフレアテクノロジー マスク検査装置及びマスク検査方法
JP6307367B2 (ja) * 2014-06-26 2018-04-04 株式会社ニューフレアテクノロジー マスク検査装置、マスク評価方法及びマスク評価システム
JP6251647B2 (ja) * 2014-07-15 2017-12-20 株式会社ニューフレアテクノロジー マスク検査装置及びマスク検査方法
JP6373119B2 (ja) * 2014-08-08 2018-08-15 株式会社ニューフレアテクノロジー マスク検査装置及びマスク検査方法

Also Published As

Publication number Publication date
IL268480A (en) 2019-09-26
TWI760437B (zh) 2022-04-11
WO2018156442A1 (en) 2018-08-30
US20180238816A1 (en) 2018-08-23
TW201841054A (zh) 2018-11-16
JP7035069B2 (ja) 2022-03-14
KR20190112177A (ko) 2019-10-02
US10451563B2 (en) 2019-10-22
JP2020510864A (ja) 2020-04-09
KR102329153B1 (ko) 2021-11-18

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