IL268436B2 - Multi-serial spacing for light mask and artifact testing and chunk print test validation - Google Patents
Multi-serial spacing for light mask and artifact testing and chunk print test validationInfo
- Publication number
- IL268436B2 IL268436B2 IL268436A IL26843619A IL268436B2 IL 268436 B2 IL268436 B2 IL 268436B2 IL 268436 A IL268436 A IL 268436A IL 26843619 A IL26843619 A IL 26843619A IL 268436 B2 IL268436 B2 IL 268436B2
- Authority
- IL
- Israel
- Prior art keywords
- electron
- optical
- optical columns
- inspection
- column
- Prior art date
Links
- 238000007689 inspection Methods 0.000 title claims description 267
- 238000012795 verification Methods 0.000 title description 37
- 238000000034 method Methods 0.000 claims description 72
- 238000004626 scanning electron microscopy Methods 0.000 claims description 72
- 238000010894 electron beam technology Methods 0.000 claims description 59
- 238000012552 review Methods 0.000 claims description 53
- 230000004044 response Effects 0.000 claims description 5
- 235000012431 wafers Nutrition 0.000 description 85
- 230000003287 optical effect Effects 0.000 description 48
- 238000012512 characterization method Methods 0.000 description 36
- 238000005286 illumination Methods 0.000 description 31
- 238000010586 diagram Methods 0.000 description 28
- 230000008569 process Effects 0.000 description 26
- 239000004065 semiconductor Substances 0.000 description 18
- 238000004519 manufacturing process Methods 0.000 description 16
- 238000013461 design Methods 0.000 description 13
- 238000005259 measurement Methods 0.000 description 12
- 230000005540 biological transmission Effects 0.000 description 11
- 238000004891 communication Methods 0.000 description 10
- 238000004364 calculation method Methods 0.000 description 7
- 238000004590 computer program Methods 0.000 description 7
- 238000012545 processing Methods 0.000 description 7
- 230000009467 reduction Effects 0.000 description 7
- 230000008901 benefit Effects 0.000 description 5
- 230000001419 dependent effect Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 230000007547 defect Effects 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 238000003491 array Methods 0.000 description 2
- 238000004422 calculation algorithm Methods 0.000 description 2
- 239000002041 carbon nanotube Substances 0.000 description 2
- 229910021393 carbon nanotube Inorganic materials 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000012805 post-processing Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000002372 labelling Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000000386 microscopy Methods 0.000 description 1
- 239000003607 modifier Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000010979 ruby Substances 0.000 description 1
- 229910001750 ruby Inorganic materials 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000000153 supplemental effect Effects 0.000 description 1
- 230000002459 sustained effect Effects 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/06—Electron sources; Electron guns
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
- G03F1/84—Inspecting
- G03F1/86—Inspecting by charged particle beam [CPB]
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70653—Metrology techniques
- G03F7/70655—Non-optical, e.g. atomic force microscope [AFM] or critical dimension scanning electron microscope [CD-SEM]
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/706843—Metrology apparatus
- G03F7/706849—Irradiation branch, e.g. optical system details, illumination mode or polarisation control
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
- G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7049—Technique, e.g. interferometric
- G03F9/7053—Non-optical, e.g. mechanical, capacitive, using an electron beam, acoustic or thermal waves
- G03F9/7061—Scanning probe microscopy, e.g. AFM, scanning tunneling microscopy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/20—Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/244—Detectors; Associated components or circuits therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/261—Details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
- H01J37/3045—Object or beam position registration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/244—Detection characterized by the detecting means
- H01J2237/24475—Scattered electron detectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/244—Detection characterized by the detecting means
- H01J2237/2448—Secondary particle detectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/26—Electron or ion microscopes
- H01J2237/28—Scanning microscopes
- H01J2237/2813—Scanning microscopes characterised by the application
- H01J2237/2814—Measurement of surface topography
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/26—Electron or ion microscopes
- H01J2237/28—Scanning microscopes
- H01J2237/2813—Scanning microscopes characterised by the application
- H01J2237/2817—Pattern inspection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/304—Controlling tubes
- H01J2237/30433—System calibration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/304—Controlling tubes
- H01J2237/30433—System calibration
- H01J2237/30438—Registration
Landscapes
- Analytical Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Public Health (AREA)
- Health & Medical Sciences (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201762454807P | 2017-02-05 | 2017-02-05 | |
| US15/879,120 US10777377B2 (en) | 2017-02-05 | 2018-01-24 | Multi-column spacing for photomask and reticle inspection and wafer print check verification |
| PCT/US2018/016761 WO2018144959A1 (en) | 2017-02-05 | 2018-02-03 | Multi-column spacing for photomask and reticle inspection and wafer print check verification |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| IL268436A IL268436A (en) | 2019-09-26 |
| IL268436B1 IL268436B1 (en) | 2023-05-01 |
| IL268436B2 true IL268436B2 (en) | 2023-09-01 |
Family
ID=63041130
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IL268436A IL268436B2 (en) | 2017-02-05 | 2018-02-03 | Multi-serial spacing for light mask and artifact testing and chunk print test validation |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US10777377B2 (enExample) |
| JP (1) | JP6971322B2 (enExample) |
| KR (1) | KR102272445B1 (enExample) |
| CN (1) | CN110431488B (enExample) |
| DE (1) | DE112018000672T5 (enExample) |
| IL (1) | IL268436B2 (enExample) |
| TW (1) | TWI746788B (enExample) |
| WO (1) | WO2018144959A1 (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7126355B2 (ja) * | 2018-02-21 | 2022-08-26 | 株式会社ニューフレアテクノロジー | 荷電粒子ビーム検査方法 |
| DE102020103339A1 (de) * | 2020-02-10 | 2021-08-12 | Carl Zeiss Microscopy Gmbh | Verfahren zum Betrieb eines Teilchenstrahlgeräts, Computerprogrammprodukt und Teilchenstrahlgerät zur Durchführung des Verfahrens |
| JP7477364B2 (ja) * | 2020-05-19 | 2024-05-01 | 株式会社ホロン | マルチビーム画像生成装置およびマルチビーム画像生成方法 |
| US11899375B2 (en) | 2020-11-20 | 2024-02-13 | Kla Corporation | Massive overlay metrology sampling with multiple measurement columns |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140158886A1 (en) * | 2012-12-04 | 2014-06-12 | Samsung Electronics Co., Ltd. | Electron beam apparatus |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5384463A (en) * | 1991-06-10 | 1995-01-24 | Fujisu Limited | Pattern inspection apparatus and electron beam apparatus |
| JPH10134757A (ja) * | 1996-10-31 | 1998-05-22 | Nikon Corp | マルチビーム検査装置 |
| JP3661592B2 (ja) * | 1998-03-27 | 2005-06-15 | 株式会社日立製作所 | パターン検査装置 |
| WO2001039243A1 (en) | 1999-11-23 | 2001-05-31 | Ion Diagnostics, Inc. | Electron optics for multi-beam electron beam lithography tool |
| WO2001060456A1 (en) * | 2000-02-19 | 2001-08-23 | Ion Diagnostics, Inc. | Multi-beam multi-column electron beam inspection system |
| JP3943022B2 (ja) * | 2000-12-01 | 2007-07-11 | 株式会社荏原製作所 | 基板検査装置 |
| US7361600B2 (en) * | 2001-11-02 | 2008-04-22 | Ebara Corporation | Semiconductor manufacturing apparatus having a built-in inspection apparatus and a device manufacturing method using said manufacturing apparatus |
| TWI458967B (zh) * | 2005-02-17 | 2014-11-01 | Ebara Corp | 電子射線裝置 |
| EP2132763B1 (en) | 2007-02-22 | 2014-05-07 | Applied Materials Israel Ltd. | High throughput sem tool |
| US20110163229A1 (en) * | 2007-02-22 | 2011-07-07 | Applied Materials Israel, Ltd. | High throughput sem tool |
| US8455838B2 (en) * | 2011-06-29 | 2013-06-04 | Kla-Tencor Corporation | Multiple-column electron beam apparatus and methods |
| JP2013125652A (ja) * | 2011-12-14 | 2013-06-24 | Samsung Yokohama Research Institute Co Ltd | 電子線装置 |
| JP2013128069A (ja) * | 2011-12-19 | 2013-06-27 | Hitachi High-Technologies Corp | 電子線検査装置、及び検査方法 |
| US8806392B2 (en) * | 2012-12-03 | 2014-08-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Distinguishable IC patterns with encoded information |
| WO2014189465A1 (en) * | 2013-05-23 | 2014-11-27 | Tao Luo | Multi-column electron beam inspection that uses custom printing methods |
| TWI658543B (zh) * | 2013-12-05 | 2019-05-01 | Stats Chippac, Ltd. | 在半導體封裝中使用標準化載體的半導體裝置及方法 |
| WO2016125864A1 (ja) * | 2015-02-05 | 2016-08-11 | 株式会社荏原製作所 | 検査装置 |
-
2018
- 2018-01-24 US US15/879,120 patent/US10777377B2/en active Active
- 2018-02-03 JP JP2019542168A patent/JP6971322B2/ja active Active
- 2018-02-03 IL IL268436A patent/IL268436B2/en unknown
- 2018-02-03 WO PCT/US2018/016761 patent/WO2018144959A1/en not_active Ceased
- 2018-02-03 KR KR1020197025929A patent/KR102272445B1/ko active Active
- 2018-02-03 CN CN201880017435.3A patent/CN110431488B/zh active Active
- 2018-02-03 DE DE112018000672.7T patent/DE112018000672T5/de active Pending
- 2018-02-05 TW TW107103930A patent/TWI746788B/zh active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140158886A1 (en) * | 2012-12-04 | 2014-06-12 | Samsung Electronics Co., Ltd. | Electron beam apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| CN110431488A (zh) | 2019-11-08 |
| DE112018000672T5 (de) | 2019-12-12 |
| JP6971322B2 (ja) | 2021-11-24 |
| US10777377B2 (en) | 2020-09-15 |
| IL268436A (en) | 2019-09-26 |
| TW201835678A (zh) | 2018-10-01 |
| US20180233318A1 (en) | 2018-08-16 |
| JP2020514996A (ja) | 2020-05-21 |
| KR102272445B1 (ko) | 2021-07-01 |
| TWI746788B (zh) | 2021-11-21 |
| WO2018144959A1 (en) | 2018-08-09 |
| CN110431488B (zh) | 2022-01-28 |
| IL268436B1 (en) | 2023-05-01 |
| KR20190107148A (ko) | 2019-09-18 |
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