IL160688A0 - A semiconductor laser based on the effect of photonic band gap crystal-mediated filtration of higher modes of laser radiation and method of making same - Google Patents

A semiconductor laser based on the effect of photonic band gap crystal-mediated filtration of higher modes of laser radiation and method of making same

Info

Publication number
IL160688A0
IL160688A0 IL16068802A IL16068802A IL160688A0 IL 160688 A0 IL160688 A0 IL 160688A0 IL 16068802 A IL16068802 A IL 16068802A IL 16068802 A IL16068802 A IL 16068802A IL 160688 A0 IL160688 A0 IL 160688A0
Authority
IL
Israel
Prior art keywords
defect
band gap
photonic band
gap crystal
modes
Prior art date
Application number
IL16068802A
Other languages
English (en)
Original Assignee
Pbc Lasers Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Pbc Lasers Ltd filed Critical Pbc Lasers Ltd
Publication of IL160688A0 publication Critical patent/IL160688A0/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18341—Intra-cavity contacts
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/16—Semiconductor lasers with special structural design to influence the modes, e.g. specific multimode
    • H01S2301/166—Single transverse or lateral mode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1021—Coupled cavities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/11—Comprising a photonic bandgap structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18322—Position of the structure
    • H01S5/1833—Position of the structure with more than one structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2018—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers
    • H01S5/2027—Reflecting region or layer, parallel to the active layer, e.g. to modify propagation of the mode in the laser or to influence transverse modes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Integrated Circuits (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
IL16068802A 2001-09-04 2002-08-29 A semiconductor laser based on the effect of photonic band gap crystal-mediated filtration of higher modes of laser radiation and method of making same IL160688A0 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/946,016 US6804280B2 (en) 2001-09-04 2001-09-04 Semiconductor laser based on the effect of photonic band gap crystal-mediated filtration of higher modes of laser radiation and method of making the same
PCT/IL2002/000718 WO2003021726A2 (en) 2001-09-04 2002-08-29 A semiconductor laser

Publications (1)

Publication Number Publication Date
IL160688A0 true IL160688A0 (en) 2004-08-31

Family

ID=25483835

Family Applications (1)

Application Number Title Priority Date Filing Date
IL16068802A IL160688A0 (en) 2001-09-04 2002-08-29 A semiconductor laser based on the effect of photonic band gap crystal-mediated filtration of higher modes of laser radiation and method of making same

Country Status (10)

Country Link
US (3) US6804280B2 (de)
EP (1) EP1436867B1 (de)
JP (1) JP2005502207A (de)
KR (1) KR20040035752A (de)
CN (1) CN1701476A (de)
AT (1) ATE363756T1 (de)
AU (1) AU2002329021A1 (de)
DE (1) DE60220430T2 (de)
IL (1) IL160688A0 (de)
WO (1) WO2003021726A2 (de)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6804280B2 (en) * 2001-09-04 2004-10-12 Pbc Lasers, Ltd. Semiconductor laser based on the effect of photonic band gap crystal-mediated filtration of higher modes of laser radiation and method of making the same
US6819696B1 (en) * 2001-09-21 2004-11-16 The United States Of America As Represented By The Secretary Of The Army Intersubband semiconductor lasers with enhanced subband depopulation rate
US7009679B2 (en) * 2002-03-14 2006-03-07 Chiral Photonics, Inc. Chiral boardband tuning apparatus and method
US6934441B2 (en) * 2003-09-09 2005-08-23 Battelle Memorial Institute Wavelength separation devices incorporating multi-barrier photonic heterostructures
US6940637B2 (en) * 2002-09-09 2005-09-06 Battelle Memorial Institute Multi-barrier photonic heterostructures
WO2004081610A2 (en) * 2003-03-14 2004-09-23 Pbc Lasers Ltd. Apparatus for generating improved laser beam
JP4090402B2 (ja) * 2003-07-30 2008-05-28 日本オプネクスト株式会社 半導体光増幅器及びそれを用いた光モジュ−ル
US7248615B2 (en) * 2003-11-25 2007-07-24 Massachusetts Institute Of Technology Electrically-activated photonic crystal microcavity laser
US20060243961A1 (en) * 2004-09-01 2006-11-02 University Of Southern California Adaptive quantum design for QCSE devices and nanophotonic devices
US7499619B2 (en) * 2004-12-03 2009-03-03 Searete Photonic crystal energy converter
US7333705B2 (en) * 2004-12-03 2008-02-19 Searete Llc Photonic crystal energy converter
US7643718B2 (en) * 2005-05-23 2010-01-05 Research Foundation Of State University Of New York Photonic waveguide device for modal control
US7635874B2 (en) * 2005-09-26 2009-12-22 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. Edge-emitting LED assembly
US20070091953A1 (en) * 2005-10-21 2007-04-26 P.B.C Lasers Ltd. Light-emitting diode with a narrow beam divergence based on the effect of photonic band crystal-mediated filtration of high-order optical modes
US7679098B2 (en) * 2006-01-30 2010-03-16 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. Highly directional light emitting diode using photonic bandgap waveguides
JP4881056B2 (ja) * 2006-05-01 2012-02-22 キヤノン株式会社 電磁波吸収体部を含むフォトニック結晶電磁波デバイス、及びその製造方法
US7949031B2 (en) * 2006-06-16 2011-05-24 Pbc Lasers Gmbh Optoelectronic systems providing high-power high-brightness laser light based on field coupled arrays, bars and stacks of semicondutor diode lasers
WO2009017829A1 (en) * 2007-08-02 2009-02-05 Los Alamos National Security, Llc Control of strain through thickness in epitaxial films via vertical nanocomposite heteroepitaxy
US7953133B2 (en) * 2007-10-12 2011-05-31 The Board Of Trustees Of The University Of Illinois Light emitting and lasing semiconductor devices and methods
DE102008036254A1 (de) * 2008-08-04 2010-02-11 Osram Opto Semiconductors Gmbh Halbleiterlaser
JP5326511B2 (ja) * 2008-11-13 2013-10-30 三菱電機株式会社 半導体レーザ装置
WO2010060998A2 (en) * 2008-11-28 2010-06-03 Pbc Lasers Gmbh Method for improvement of beam quality and wavelength stabilized operation of a semiconductor diode laser with an extended waveguide
US8646949B2 (en) * 2010-03-03 2014-02-11 LumenFlow Corp. Constrained folded path resonant white light scintillator
JP6158248B2 (ja) 2014-05-27 2017-07-05 ザ・ボード・オブ・トラスティーズ・オブ・ザ・ユニバーシティ・オブ・イリノイＴｈｅ Ｂｏａｒｄ Ｏｆ Ｔｒｕｓｔｅｅｓ Ｏｆ Ｔｈｅ Ｕｎｉｖｅｒｓｉｔｙ Ｏｆ Ｉｌｌｉｎｏｉｓ ナノ構造材料の方法および素子
CN104317775B (zh) * 2014-10-15 2017-05-10 泉州师范学院 一种基于迭代并矢格林函数的谐振腔模式分析算法
JP2017216348A (ja) * 2016-05-31 2017-12-07 三菱電機株式会社 端面出射型半導体レーザ
TWI698057B (zh) * 2018-02-13 2020-07-01 國立交通大學 具有透明導電層之二維光子晶體面射型雷射
CN110426907B (zh) 2019-08-02 2021-08-13 广东工业大学 一种光学频率转换方法、装置和设备

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1137605A (en) 1979-01-15 1982-12-14 Donald R. Scifres High output power laser
US5175741A (en) 1989-06-07 1992-12-29 Fuji Photo Film Co., Ltd. Optical wavelength conversion method and laser-diode-pumped solid-state laser
US5187461A (en) * 1991-02-15 1993-02-16 Karl Brommer Low-loss dielectric resonator having a lattice structure with a resonant defect
US6241720B1 (en) 1995-02-04 2001-06-05 Spectra Physics, Inc. Diode pumped, multi axial mode intracavity doubled laser
DE19526734A1 (de) * 1995-07-21 1997-01-23 Siemens Ag Optische Struktur und Verfahren zu deren Herstellung
US6001664A (en) 1996-02-01 1999-12-14 Cielo Communications, Inc. Method for making closely-spaced VCSEL and photodetector on a substrate
US6392256B1 (en) 1996-02-01 2002-05-21 Cielo Communications, Inc. Closely-spaced VCSEL and photodetector for applications requiring their independent operation
US5976905A (en) 1996-02-16 1999-11-02 Cielo Communications, Inc. Method of manufacturing VCSEL arrays using vapor phase epitaxy to achieve uniform device-to-device operating characteristics
US5912910A (en) 1996-05-17 1999-06-15 Sdl, Inc. High power pumped mid-IR wavelength systems using nonlinear frequency mixing (NFM) devices
US5907427A (en) * 1997-10-24 1999-05-25 Time Domain Corporation Photonic band gap device and method using a periodicity defect region to increase photonic signal delay
US6028693A (en) * 1998-01-14 2000-02-22 University Of Alabama In Huntsville Microresonator and associated method for producing and controlling photonic signals with a photonic bandgap delay apparatus
US6304366B1 (en) * 1998-04-02 2001-10-16 Michael Scalora Photonic signal frequency conversion using a photonic band gap structure
EP1090323A4 (de) 1998-04-09 2005-09-21 Ceramoptec Gmbh System zur frequenzumwandlung und bündelung für laserdioden
US6160834A (en) 1998-11-14 2000-12-12 Cielo Communications, Inc. Vertical cavity surface emitting lasers with consistent slope efficiencies
WO2000036664A2 (en) * 1998-12-17 2000-06-22 Seiko Epson Corporation Light-emitting device
DE60034846T2 (de) * 1999-02-04 2008-01-17 Chiral Photonics, Inc. Laserstruktur mit chiraler verdrehung sowie filtergerät und verfahren
JP2000277260A (ja) * 1999-03-23 2000-10-06 Seiko Epson Corp 発光装置
US6396617B1 (en) * 1999-05-17 2002-05-28 Michael Scalora Photonic band gap device and method using a periodicity defect region doped with a gain medium to increase photonic signal delay
US6542682B2 (en) * 2000-08-15 2003-04-01 Corning Incorporated Active photonic crystal waveguide device
US6804280B2 (en) * 2001-09-04 2004-10-12 Pbc Lasers, Ltd. Semiconductor laser based on the effect of photonic band gap crystal-mediated filtration of higher modes of laser radiation and method of making the same

Also Published As

Publication number Publication date
AU2002329021A1 (en) 2003-03-18
EP1436867A2 (de) 2004-07-14
US20030043870A1 (en) 2003-03-06
KR20040035752A (ko) 2004-04-29
CN1701476A (zh) 2005-11-23
JP2005502207A (ja) 2005-01-20
US20040076213A1 (en) 2004-04-22
US6928099B2 (en) 2005-08-09
EP1436867A4 (de) 2005-07-27
US6996148B2 (en) 2006-02-07
US20040208215A1 (en) 2004-10-21
DE60220430T2 (de) 2008-01-24
WO2003021726A3 (en) 2004-02-26
EP1436867B1 (de) 2007-05-30
WO2003021726A2 (en) 2003-03-13
DE60220430D1 (de) 2007-07-12
US6804280B2 (en) 2004-10-12
ATE363756T1 (de) 2007-06-15

Similar Documents

Publication Publication Date Title
IL160688A0 (en) A semiconductor laser based on the effect of photonic band gap crystal-mediated filtration of higher modes of laser radiation and method of making same
CA2338106A1 (en) High power laterally antiguided semiconductor light source with reduced transverse optical confinement
DE60212344D1 (de) Mittels elektroabsorption modulierter laser mit asymmetrischem wellenleiter
ATE556350T1 (de) Optischer modulator
WO1998036300A3 (en) Polarisation asymmetric active optical waveguide, method of its production, and its uses
JPWO2007088998A1 (ja) 光アイソレータ
JP2016072608A (ja) 半導体レーザおよびこれを備える光集積光源
JPS6450481A (en) Super light emitting diode and single mode laser
KR102078144B1 (ko) 초고출력 싱글모드 광섬유 레이저 시스템
US20220140563A1 (en) Optical device and laser apparatus
CN110247292B (zh) 一种抑制光子暗化和光子暗化漂白的装置、方法
JP2008258531A (ja) レーザ増幅装置およびレーザ装置
KR20100008577A (ko) 도파로 렌즈를 구비하는 반도체 레이저
JP2005518098A (ja) 同位相出力を有するレーザ・ダイオード・アレイ
JPS63150981A (ja) 半導体レ−ザ装置
JP2015206969A (ja) スポットサイズ変換素子および半導体装置
WO2022107311A1 (ja) 光送信器
JP2023121892A (ja) ファイバレーザ装置
US20010053168A1 (en) Asymmetric optical waveguide structure for reducing loss and enhancing power output in semiconductor lasers
Malag et al. Low vertical beam divergence double-barrier separate confinement heterostructure (DBSCH) SQW high power laser diodes for/spl lambda/= 800 nm range
JPS58199586A (ja) 半導体レ−ザ
JPH06268289A (ja) スラブレーザ
JPS62290191A (ja) 半導体レ−ザ装置
JPS57157587A (en) Semiconductor laser device
Mossakowska-Wyszynska Modulation bandwidth of planar circular grating distributed bragg reflector lasers

Legal Events

Date Code Title Description
FF Patent granted
MM9K Patent not in force due to non-payment of renewal fees