IL153608A0 - Composition for the chemical mechanical polishing of metal and metal/dielectric structures - Google Patents

Composition for the chemical mechanical polishing of metal and metal/dielectric structures

Info

Publication number
IL153608A0
IL153608A0 IL15360802A IL15360802A IL153608A0 IL 153608 A0 IL153608 A0 IL 153608A0 IL 15360802 A IL15360802 A IL 15360802A IL 15360802 A IL15360802 A IL 15360802A IL 153608 A0 IL153608 A0 IL 153608A0
Authority
IL
Israel
Prior art keywords
metal
composition
mechanical polishing
chemical mechanical
dielectric structures
Prior art date
Application number
IL15360802A
Other languages
English (en)
Original Assignee
Bayer Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bayer Ag filed Critical Bayer Ag
Publication of IL153608A0 publication Critical patent/IL153608A0/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
IL15360802A 2001-12-27 2002-12-24 Composition for the chemical mechanical polishing of metal and metal/dielectric structures IL153608A0 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE10164262A DE10164262A1 (de) 2001-12-27 2001-12-27 Zusammensetzung für das chemisch-mechanische Polieren von Metall- und Metall/Dielektrikastrukturen

Publications (1)

Publication Number Publication Date
IL153608A0 true IL153608A0 (en) 2003-07-06

Family

ID=7711046

Family Applications (1)

Application Number Title Priority Date Filing Date
IL15360802A IL153608A0 (en) 2001-12-27 2002-12-24 Composition for the chemical mechanical polishing of metal and metal/dielectric structures

Country Status (9)

Country Link
US (1) US20030157804A1 (ko)
EP (1) EP1323798A1 (ko)
JP (1) JP2003224092A (ko)
KR (1) KR20030057362A (ko)
CN (1) CN1428388A (ko)
DE (1) DE10164262A1 (ko)
IL (1) IL153608A0 (ko)
SG (1) SG105566A1 (ko)
TW (1) TW200400239A (ko)

Families Citing this family (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10152993A1 (de) * 2001-10-26 2003-05-08 Bayer Ag Zusammensetzung für das chemisch-mechanische Polieren von Metall- und Metall/Dielektrikastrukturen mit hoher Selektivität
DE10230982A1 (de) 2002-07-10 2004-01-22 H.C. Starck Gmbh Guanidincarbonat-haltiges Kieselsol
EP1567606A1 (en) * 2002-10-22 2005-08-31 Psiloquest, Inc. A corrosion retarding polishing slurry for the chemical mechanical polishing of copper surfaces
TWI347969B (en) * 2003-09-30 2011-09-01 Fujimi Inc Polishing composition
US20070037892A1 (en) * 2004-09-08 2007-02-15 Irina Belov Aqueous slurry containing metallate-modified silica particles
US20060108325A1 (en) * 2004-11-19 2006-05-25 Everson William J Polishing process for producing damage free surfaces on semi-insulating silicon carbide wafers
US7208325B2 (en) * 2005-01-18 2007-04-24 Applied Materials, Inc. Refreshing wafers having low-k dielectric materials
KR100641348B1 (ko) 2005-06-03 2006-11-03 주식회사 케이씨텍 Ｃｍｐ용 슬러리와 이의 제조 방법 및 기판의 연마 방법
JP2007207785A (ja) * 2006-01-30 2007-08-16 Fujifilm Corp 金属研磨用組成物
EP1813656A3 (en) * 2006-01-30 2009-09-02 FUJIFILM Corporation Metal-polishing liquid and chemical mechanical polishing method using the same
US20070176142A1 (en) * 2006-01-31 2007-08-02 Fujifilm Corporation Metal- polishing liquid and chemical-mechanical polishing method using the same
JP2007207908A (ja) * 2006-01-31 2007-08-16 Fujifilm Corp バリア層用研磨液
JP2007208220A (ja) * 2006-02-06 2007-08-16 Fujifilm Corp 金属用研磨組成物及びそれを用いた化学的機械的研磨方法
JP2007208216A (ja) * 2006-02-06 2007-08-16 Fujifilm Corp 金属用研磨液及びそれを用いた研磨方法
JP2007214518A (ja) * 2006-02-13 2007-08-23 Fujifilm Corp 金属用研磨液
US7902072B2 (en) * 2006-02-28 2011-03-08 Fujifilm Corporation Metal-polishing composition and chemical-mechanical polishing method
CN100400234C (zh) * 2006-04-19 2008-07-09 山东大学 大直径高硬度6H-SiC单晶片的表面抛光方法
US7998866B2 (en) * 2006-09-05 2011-08-16 Cabot Microelectronics Corporation Silicon carbide polishing method utilizing water-soluble oxidizers
US7678700B2 (en) * 2006-09-05 2010-03-16 Cabot Microelectronics Corporation Silicon carbide polishing method utilizing water-soluble oxidizers
US8167684B2 (en) * 2006-10-24 2012-05-01 Cabot Microelectronics Corporation Chemical mechanical polishing slurry, its preparation method, and use for the same
CN101220255B (zh) * 2007-01-11 2010-06-30 长兴开发科技股份有限公司 化学机械研磨浆液与化学机械平坦化方法
EP2352167B1 (en) * 2008-11-10 2017-02-15 Asahi Glass Company, Limited Abrasive composition and method for manufacturing semiconductor integrated circuit device
CN101966689B (zh) * 2010-09-27 2013-04-10 山东大学 一种大直径4H-SiC晶片碳面的表面抛光方法
US20120264303A1 (en) * 2011-04-15 2012-10-18 Taiwan Semiconductor Manufacturing Co., Ltd. Chemical mechanical polishing slurry, system and method
US9303189B2 (en) 2014-03-11 2016-04-05 Cabot Microelectronics Corporation Composition for tungsten CMP
US9238754B2 (en) 2014-03-11 2016-01-19 Cabot Microelectronics Corporation Composition for tungsten CMP
US9303188B2 (en) 2014-03-11 2016-04-05 Cabot Microelectronics Corporation Composition for tungsten CMP
US9309442B2 (en) 2014-03-21 2016-04-12 Cabot Microelectronics Corporation Composition for tungsten buffing
US9303190B2 (en) 2014-03-24 2016-04-05 Cabot Microelectronics Corporation Mixed abrasive tungsten CMP composition
US9127187B1 (en) 2014-03-24 2015-09-08 Cabot Microelectronics Corporation Mixed abrasive tungsten CMP composition
CN104371649B (zh) * 2014-09-28 2017-05-10 顾泉 一种化学机械研磨组合物
AU2016206650A1 (en) 2015-01-14 2017-08-10 Gregory Van Buskirk Improved fabric treatment method for stain release
JP2016155900A (ja) * 2015-02-23 2016-09-01 株式会社フジミインコーポレーテッド 研磨用組成物、研磨方法及び硬脆材料基板の製造方法
US9293339B1 (en) 2015-09-24 2016-03-22 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of polishing semiconductor substrate
JP6878772B2 (ja) * 2016-04-14 2021-06-02 昭和電工マテリアルズ株式会社 研磨剤、研磨剤用貯蔵液及び研磨方法
US10253216B2 (en) * 2016-07-01 2019-04-09 Versum Materials Us, Llc Additives for barrier chemical mechanical planarization
JP7419233B2 (ja) * 2018-07-25 2024-01-22 東洋炭素株式会社 ＳｉＣウエハの製造方法
CN113135573B (zh) * 2021-05-26 2023-03-31 山东银丰纳米新材料有限公司 一种锆改性的阳离子型硅溶胶及其制备方法
WO2023136331A1 (ja) * 2022-01-13 2023-07-20 日産化学株式会社 粒度分布を有するシリカゾル及びその製造方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3922393A (en) * 1974-07-02 1975-11-25 Du Pont Process for polishing silicon and germanium semiconductor materials
KR930002764B1 (ko) * 1988-06-03 1993-04-10 닛뽄 몬산토 가부시끼가이샤 실리콘 웨이퍼 연마용 화합물
US5575837A (en) * 1993-04-28 1996-11-19 Fujimi Incorporated Polishing composition
US20020019202A1 (en) * 1998-06-10 2002-02-14 Thomas Terence M. Control of removal rates in CMP
JP2002517593A (ja) * 1998-06-10 2002-06-18 ロデール ホールディングス インコーポレイテッド 金属ｃｍｐにおける研磨用組成物および研磨方法
WO1999067056A1 (en) * 1998-06-23 1999-12-29 Arch Specialty Chemicals, Inc. Composition for the chemical mechanical polishing of metal layers
US6063306A (en) * 1998-06-26 2000-05-16 Cabot Corporation Chemical mechanical polishing slurry useful for copper/tantalum substrate
FR2785614B1 (fr) * 1998-11-09 2001-01-26 Clariant France Sa Nouveau procede de polissage mecano-chimique selectif entre une couche d'oxyde de silicium et une couche de nitrure de silicium
FR2792643B1 (fr) * 1999-04-22 2001-07-27 Clariant France Sa Composition de polissage mecano-chimique de couches en un materiau isolant a base de polymere a faible constante dielectrique
US6402978B1 (en) * 1999-05-06 2002-06-11 Mpm Ltd. Magnetic polishing fluids for polishing metal substrates
DE10060343A1 (de) * 2000-12-04 2002-06-06 Bayer Ag Polierslurry für das chemisch-mechanische Polieren von Metall- und Dielektrikastrukturen
JP3899456B2 (ja) * 2001-10-19 2007-03-28 株式会社フジミインコーポレーテッド 研磨用組成物およびそれを用いた研磨方法
US20030118824A1 (en) * 2001-12-20 2003-06-26 Tokarz Bozena Stanislawa Coated silica particles and method for production thereof
US6673132B1 (en) * 2002-08-20 2004-01-06 Everlight Usa, Inc. SiO2/Al2O3 composite abrasive and method for producing the same

Also Published As

Publication number Publication date
TW200400239A (en) 2004-01-01
DE10164262A1 (de) 2003-07-17
JP2003224092A (ja) 2003-08-08
KR20030057362A (ko) 2003-07-04
CN1428388A (zh) 2003-07-09
EP1323798A1 (de) 2003-07-02
US20030157804A1 (en) 2003-08-21
SG105566A1 (en) 2004-08-27

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