IL123027A - Eyesafe laser system using transition metal-doped group II-VI semiconductor as a passive saturable absorber Q-switch - Google Patents

Eyesafe laser system using transition metal-doped group II-VI semiconductor as a passive saturable absorber Q-switch

Info

Publication number
IL123027A
IL123027A IL12302798A IL12302798A IL123027A IL 123027 A IL123027 A IL 123027A IL 12302798 A IL12302798 A IL 12302798A IL 12302798 A IL12302798 A IL 12302798A IL 123027 A IL123027 A IL 123027A
Authority
IL
Israel
Prior art keywords
semiconductor
switch
transition metal
laser system
saturable absorber
Prior art date
Application number
IL12302798A
Other languages
English (en)
Other versions
IL123027A0 (en
Original Assignee
Raytheon Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Raytheon Co filed Critical Raytheon Co
Publication of IL123027A0 publication Critical patent/IL123027A0/xx
Publication of IL123027A publication Critical patent/IL123027A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
    • H01S3/1123—Q-switching
    • H01S3/113—Q-switching using intracavity saturable absorbers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/1601—Solid materials characterised by an active (lasing) ion
    • H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
    • H01S3/1608—Solid materials characterised by an active (lasing) ion rare earth erbium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/163—Solid materials characterised by a crystal matrix
    • H01S3/164—Solid materials characterised by a crystal matrix garnet

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • Lasers (AREA)
IL12302798A 1997-01-24 1998-01-22 Eyesafe laser system using transition metal-doped group II-VI semiconductor as a passive saturable absorber Q-switch IL123027A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/790,350 US5832008A (en) 1997-01-24 1997-01-24 Eyesafe laser system using transition metal-doped group II-VI semiconductor as a passive saturable absorber Q-switch

Publications (2)

Publication Number Publication Date
IL123027A0 IL123027A0 (en) 1998-09-24
IL123027A true IL123027A (en) 2000-12-06

Family

ID=25150414

Family Applications (1)

Application Number Title Priority Date Filing Date
IL12302798A IL123027A (en) 1997-01-24 1998-01-22 Eyesafe laser system using transition metal-doped group II-VI semiconductor as a passive saturable absorber Q-switch

Country Status (4)

Country Link
US (1) US5832008A (de)
EP (1) EP0855770A3 (de)
IL (1) IL123027A (de)
NO (1) NO980304L (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6400495B1 (en) 2000-02-15 2002-06-04 Massachusetts Institute Of Technology Laser system including passively Q-switched laser and gain-switched laser
US8817830B2 (en) * 2002-09-19 2014-08-26 The Uab Research Foundation Saturable absorbers for Q-switching of middle infrared laser cavaties
US7606274B2 (en) * 2001-09-20 2009-10-20 The Uab Research Foundation Mid-IR instrument for analyzing a gaseous sample and method for using the same
JP2005504437A (ja) * 2001-09-20 2005-02-10 ユニバーシティ・オブ・アラバマ・アット・バーミンガム・リサーチ・ファウンデーション 中間赤外マイクロチップレーザ：飽和可能吸収体材料を有するＺｎＳ：Ｃｒ２＋レーザ
JP4856850B2 (ja) * 2002-03-19 2012-01-18 ライトウェーブ エレクトロニクス コーポレイション 受動ｑ−スイッチレーザの位相同期ループ制御
US20060007965A1 (en) * 2004-07-12 2006-01-12 Nikolai Tankovich Passive Q-switch modulated fiber laser
US7203209B2 (en) * 2005-01-19 2007-04-10 Bae Systems Information And Electronic Systems Integration Inc. System and method for a passively Q-switched, resonantly pumped, erbium-doped crystalline laser
US7391794B2 (en) * 2005-05-25 2008-06-24 Jds Uniphase Corporation Injection seeding of frequency-converted Q-switched laser
IL251520A0 (en) * 2017-04-02 2017-06-29 Jerusalem College Of Tech Tolerable inversion of quality factor in a pumped-diode laser
EP4257573B1 (de) * 2020-09-08 2025-06-25 Trieye Ltd. Neuartiger passiv gütegeschalteter laser

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4723248A (en) * 1983-06-10 1988-02-02 Allied Corporation Optical limiter
US5394413A (en) * 1994-02-08 1995-02-28 Massachusetts Institute Of Technology Passively Q-switched picosecond microlaser
US5388114A (en) * 1994-03-17 1995-02-07 Polaroid Corporation Miniaturized self-Q-switched frequency-doubled laser
US5541948A (en) * 1994-11-28 1996-07-30 The Regents Of The University Of California Transition-metal doped sulfide, selenide, and telluride laser crystal and lasers
US5557624A (en) * 1995-01-20 1996-09-17 Hughes Aircraft Company Laser system using U-doped crystal Q-switch
US5802083A (en) * 1995-12-11 1998-09-01 Milton Birnbaum Saturable absorber Q-switches for 2-μm lasers

Also Published As

Publication number Publication date
EP0855770A3 (de) 2000-10-18
NO980304L (no) 1998-07-27
EP0855770A2 (de) 1998-07-29
US5832008A (en) 1998-11-03
NO980304D0 (no) 1998-01-23
IL123027A0 (en) 1998-09-24

Similar Documents

Publication Publication Date Title
EP0594395A3 (de) Leistungshalbleitermodul.
EP0657976A3 (de) Laser-Resonator mit passiver Güteschaltung durch einen sättigbaren Absorber.
IL120719A0 (en) High efficiency laser diode packaging
DE69319026D1 (de) Halbleiter-Leistungsmodul
DE69325953D1 (de) Leistungshalbleitermodul
GB2331178B (en) Intra-cavity tripled solid state diode pumped laser
DE59304797D1 (de) Leistungshalbleiter-Modul
DE59008471D1 (de) Leistungshalbleitermodul.
DE59304453D1 (de) Halbleiterbaugruppe, insbesondere Fernsteuer-Empfangsmodul
NO964110D0 (no) Forbedret energilagringsanordning, samt fremgangsmåter for fremstilling
DE59406106D1 (de) Leistungshalbleiterbauelement
DE69414337D1 (de) Leistungs-Halbleiter-Schaltmodul
DK0417830T3 (da) Energibesparende fremgangsmåde til fremstilling af urea
DE69103918D1 (de) Synchronschaltsystem verwendender Leistungswandler mit hohem Wirkungsgrad.
DE69730784D1 (de) Laserdiodengepumpter Festkörperlasermodul
EP0665484A3 (de) Schaltung zur Reduzierung des Energieverbrauches für Synchronhalbleitervorrichtung.
DE69702562D1 (de) Halbleiterlasermodul
IL123027A (en) Eyesafe laser system using transition metal-doped group II-VI semiconductor as a passive saturable absorber Q-switch
NO981890D0 (no) FremgangsmÕte for effektstyring, samt celledelt radiosystem
FI101413B (fi) Jätelämmön hyödyntämismenetelmä esim. voimalaitoksissa
GB2241109B (en) A semiconductor-laser-pumped,solid-state laser
DE19881180T1 (de) Frequenzstabilisierter Halbleiter-Laser
GB2254485B (en) High-power,end-pumped solid-state laser
DE69409597D1 (de) Leistungshalbleiterbauelement
FR2701129B1 (fr) Interface de puissance de sécurité.

Legal Events

Date Code Title Description
FF Patent granted
KB Patent renewed
KB Patent renewed
KB Patent renewed
KB Patent renewed
KB Patent renewed
EXP Patent expired