NO980304L - Lasersystem med en passiv mettbar absorberer - Google Patents
Lasersystem med en passiv mettbar absorbererInfo
- Publication number
- NO980304L NO980304L NO980304A NO980304A NO980304L NO 980304 L NO980304 L NO 980304L NO 980304 A NO980304 A NO 980304A NO 980304 A NO980304 A NO 980304A NO 980304 L NO980304 L NO 980304L
- Authority
- NO
- Norway
- Prior art keywords
- eye
- switch
- safe
- laser
- laser system
- Prior art date
Links
- 239000006096 absorbing agent Substances 0.000 title abstract 3
- 238000004061 bleaching Methods 0.000 abstract 2
- 238000006243 chemical reaction Methods 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 238000010521 absorption reaction Methods 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 230000006378 damage Effects 0.000 abstract 1
- 230000004907 flux Effects 0.000 abstract 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 238000006467 substitution reaction Methods 0.000 abstract 1
- 229910001428 transition metal ion Inorganic materials 0.000 abstract 1
- 229910052725 zinc Inorganic materials 0.000 abstract 1
- 239000011701 zinc Substances 0.000 abstract 1
- -1 zinc chalcogenides Chemical class 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
- H01S3/1123—Q-switching
- H01S3/113—Q-switching using intracavity saturable absorbers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/1601—Solid materials characterised by an active (lasing) ion
- H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
- H01S3/1608—Solid materials characterised by an active (lasing) ion rare earth erbium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/163—Solid materials characterised by a crystal matrix
- H01S3/164—Solid materials characterised by a crystal matrix garnet
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Optics & Photonics (AREA)
- Lasers (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/790,350 US5832008A (en) | 1997-01-24 | 1997-01-24 | Eyesafe laser system using transition metal-doped group II-VI semiconductor as a passive saturable absorber Q-switch |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| NO980304D0 NO980304D0 (no) | 1998-01-23 |
| NO980304L true NO980304L (no) | 1998-07-27 |
Family
ID=25150414
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NO980304A NO980304L (no) | 1997-01-24 | 1998-01-23 | Lasersystem med en passiv mettbar absorberer |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US5832008A (de) |
| EP (1) | EP0855770A3 (de) |
| IL (1) | IL123027A (de) |
| NO (1) | NO980304L (de) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6400495B1 (en) | 2000-02-15 | 2002-06-04 | Massachusetts Institute Of Technology | Laser system including passively Q-switched laser and gain-switched laser |
| US8817830B2 (en) * | 2002-09-19 | 2014-08-26 | The Uab Research Foundation | Saturable absorbers for Q-switching of middle infrared laser cavaties |
| US7606274B2 (en) * | 2001-09-20 | 2009-10-20 | The Uab Research Foundation | Mid-IR instrument for analyzing a gaseous sample and method for using the same |
| JP2005504437A (ja) * | 2001-09-20 | 2005-02-10 | ユニバーシティ・オブ・アラバマ・アット・バーミンガム・リサーチ・ファウンデーション | 中間赤外マイクロチップレーザ:飽和可能吸収体材料を有するZnS:Cr2+レーザ |
| JP4856850B2 (ja) * | 2002-03-19 | 2012-01-18 | ライトウェーブ エレクトロニクス コーポレイション | 受動q−スイッチレーザの位相同期ループ制御 |
| US20060007965A1 (en) * | 2004-07-12 | 2006-01-12 | Nikolai Tankovich | Passive Q-switch modulated fiber laser |
| US7203209B2 (en) * | 2005-01-19 | 2007-04-10 | Bae Systems Information And Electronic Systems Integration Inc. | System and method for a passively Q-switched, resonantly pumped, erbium-doped crystalline laser |
| US7391794B2 (en) * | 2005-05-25 | 2008-06-24 | Jds Uniphase Corporation | Injection seeding of frequency-converted Q-switched laser |
| IL251520A0 (en) * | 2017-04-02 | 2017-06-29 | Jerusalem College Of Tech | Tolerable inversion of quality factor in a pumped-diode laser |
| EP4257573B1 (de) * | 2020-09-08 | 2025-06-25 | Trieye Ltd. | Neuartiger passiv gütegeschalteter laser |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4723248A (en) * | 1983-06-10 | 1988-02-02 | Allied Corporation | Optical limiter |
| US5394413A (en) * | 1994-02-08 | 1995-02-28 | Massachusetts Institute Of Technology | Passively Q-switched picosecond microlaser |
| US5388114A (en) * | 1994-03-17 | 1995-02-07 | Polaroid Corporation | Miniaturized self-Q-switched frequency-doubled laser |
| US5541948A (en) * | 1994-11-28 | 1996-07-30 | The Regents Of The University Of California | Transition-metal doped sulfide, selenide, and telluride laser crystal and lasers |
| US5557624A (en) * | 1995-01-20 | 1996-09-17 | Hughes Aircraft Company | Laser system using U-doped crystal Q-switch |
| US5802083A (en) * | 1995-12-11 | 1998-09-01 | Milton Birnbaum | Saturable absorber Q-switches for 2-μm lasers |
-
1997
- 1997-01-24 US US08/790,350 patent/US5832008A/en not_active Expired - Lifetime
-
1998
- 1998-01-22 IL IL12302798A patent/IL123027A/xx not_active IP Right Cessation
- 1998-01-22 EP EP98101022A patent/EP0855770A3/de not_active Withdrawn
- 1998-01-23 NO NO980304A patent/NO980304L/no not_active Application Discontinuation
Also Published As
| Publication number | Publication date |
|---|---|
| EP0855770A3 (de) | 2000-10-18 |
| EP0855770A2 (de) | 1998-07-29 |
| IL123027A (en) | 2000-12-06 |
| US5832008A (en) | 1998-11-03 |
| NO980304D0 (no) | 1998-01-23 |
| IL123027A0 (en) | 1998-09-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CA2169785A1 (en) | Saturable bragg reflector | |
| NO980304L (no) | Lasersystem med en passiv mettbar absorberer | |
| CA2200925A1 (en) | Saturable bragg reflector structure and process for fabricating the same | |
| US6031853A (en) | Eyesafe optical parametric system pumped by solid state lasers | |
| Pollock et al. | Recent progress in color center lasers | |
| KR970008748A (ko) | 회전 광쇄기 및 유도 브릴루앙 산란거울이 구비된 고반복 레이저 | |
| JP3358770B2 (ja) | 光制御物質及び光制御方法 | |
| Finch et al. | Development of a high-power, high-repetition rate, diode-pumped, deep UV laser system | |
| Vodop'ianov et al. | Highly efficient picosecond parametric superluminescence in a ZnGeP2 crystal in the range of 5-6.3 microns | |
| JPH08227085A (ja) | レーザ装置 | |
| Li et al. | Photonic Switching Devices Based on Excited-State Nonlinear Absorption in C 60 | |
| Raffy et al. | AgGaSe2 OPO pumped by a LiNbO3 OPO | |
| LeBerre et al. | Optical bistability and instabilities via diffraction-free-encoding and a single feedback mirror | |
| Odoulov et al. | Light hexagons in LiNbO3: Fe | |
| Chandra et al. | Tunable Output Around 8μm from a Single Step AgGaS2 OPO Pumped at 1.064 μm | |
| Ippen | Modelocking, stabilizing, and starting ultrashort pulse lasers. | |
| De La Fuente et al. | Improvement of the efficiency of laser-induced dynamic gratings in a Kerr medium by a spatial soliton | |
| Camargo et al. | Co/sup 2+: Y/sub 3/Sc/sub 2/Ga/sub 3/O/sub 12/(YSGG) passive Q-switch for infrared erbium lasers | |
| Bakiev et al. | Oscillations in an uncooled bistable semiconductor device | |
| Kubeček et al. | Ti: sapphire laser pumped by a long train of pulses from mode-locked Nd: YAG laser with negative feedback | |
| JPH06334252A (ja) | レーザ発生装置 | |
| Nittmann et al. | Powerful high repetition rate nanosecond optical parametric generator in MgO: PPLN tunable from 3.5 µm to 4.6 µm | |
| Furuse et al. | Mid-Infrared Optical Absorption in Germanium Under Intense Laser Fields | |
| JPH04308821A (ja) | 光制御素子 | |
| Robinson et al. | Frequency doubling conversion efficiencies for deep space optical communications |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FC2A | Withdrawal, rejection or dismissal of laid open patent application |