IL122539A - Optical wave detector - Google Patents
Optical wave detectorInfo
- Publication number
- IL122539A IL122539A IL12253997A IL12253997A IL122539A IL 122539 A IL122539 A IL 122539A IL 12253997 A IL12253997 A IL 12253997A IL 12253997 A IL12253997 A IL 12253997A IL 122539 A IL122539 A IL 122539A
- Authority
- IL
- Israel
- Prior art keywords
- detector
- layers
- stack
- sgg2
- semiconductor material
- Prior art date
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 12
- 239000000463 material Substances 0.000 claims abstract description 64
- 239000004065 semiconductor Substances 0.000 claims abstract description 51
- 230000008878 coupling Effects 0.000 claims abstract description 14
- 238000010168 coupling process Methods 0.000 claims abstract description 14
- 238000005859 coupling reaction Methods 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 101100176787 Caenorhabditis elegans gsk-3 gene Proteins 0.000 claims abstract description 10
- 238000001514 detection method Methods 0.000 claims abstract description 5
- 229910004613 CdTe Inorganic materials 0.000 claims description 4
- 230000004888 barrier function Effects 0.000 claims description 4
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 claims description 3
- 238000005259 measurement Methods 0.000 claims description 2
- 229910005542 GaSb Inorganic materials 0.000 description 9
- 230000000694 effects Effects 0.000 description 5
- 238000006862 quantum yield reaction Methods 0.000 description 5
- 239000000969 carrier Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 101001053302 Homo sapiens Serine protease inhibitor Kazal-type 7 Proteins 0.000 description 2
- 102100024376 Serine protease inhibitor Kazal-type 7 Human genes 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- VLJQDHDVZJXNQL-UHFFFAOYSA-N 4-methyl-n-(oxomethylidene)benzenesulfonamide Chemical compound CC1=CC=C(S(=O)(=O)N=C=O)C=C1 VLJQDHDVZJXNQL-UHFFFAOYSA-N 0.000 description 1
- 229910017115 AlSb Inorganic materials 0.000 description 1
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 229910005538 GaSn Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- 101100371340 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) TYE7 gene Proteins 0.000 description 1
- XRZCZVQJHOCRCR-UHFFFAOYSA-N [Si].[Pt] Chemical compound [Si].[Pt] XRZCZVQJHOCRCR-UHFFFAOYSA-N 0.000 description 1
- 239000013256 coordination polymer Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910021340 platinum monosilicide Inorganic materials 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- VLCQZHSMCYCDJL-UHFFFAOYSA-N tribenuron methyl Chemical compound COC(=O)C1=CC=CC=C1S(=O)(=O)NC(=O)N(C)C1=NC(C)=NC(OC)=N1 VLCQZHSMCYCDJL-UHFFFAOYSA-N 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/70—Surface textures, e.g. pyramid structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/70—Surface textures, e.g. pyramid structures
- H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Light Receiving Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR9615738A FR2757684B1 (fr) | 1996-12-20 | 1996-12-20 | Detecteur infrarouge a structure quantique, non refroidie |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| IL122539A0 IL122539A0 (en) | 1998-06-15 |
| IL122539A true IL122539A (en) | 2001-06-14 |
Family
ID=9498916
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IL12253997A IL122539A (en) | 1996-12-20 | 1997-12-10 | Optical wave detector |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US5969375A (de) |
| EP (1) | EP0849809A1 (de) |
| JP (1) | JPH10190021A (de) |
| CA (1) | CA2222855A1 (de) |
| FR (1) | FR2757684B1 (de) |
| IL (1) | IL122539A (de) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2772919B1 (fr) * | 1997-12-23 | 2000-03-17 | Thomson Csf | Imageur infrarouge a structure quantique fonctionnant a temperature ambiante |
| FR2784514B1 (fr) | 1998-10-13 | 2001-04-27 | Thomson Csf | Procede de controle d'un laser semiconducteur unipolaire |
| US6243194B1 (en) * | 1998-12-18 | 2001-06-05 | Eastman Kodak Company | Electro-mechanical grating device |
| US6104046A (en) * | 1999-03-12 | 2000-08-15 | Sagi-Nahor Ltd. | Dual-band infrared sensing material array and focal plane array |
| FR2799314B1 (fr) | 1999-10-01 | 2002-10-25 | Thomson Csf | Laser a generations parametriques |
| FR2800201B1 (fr) * | 1999-10-26 | 2003-07-04 | Thomson Csf | Detecteur photovoltaique |
| WO2002047169A1 (en) * | 2000-12-01 | 2002-06-13 | California Institute Of Technology | Multi-quantum-well infrared sensor array in spatially separated multi-band configuration |
| FR2863774B1 (fr) * | 2003-12-16 | 2006-03-03 | Thales Sa | Photodetecteur a concentration de champ proche |
| KR100937591B1 (ko) * | 2007-12-17 | 2010-01-20 | 한국전자통신연구원 | 반도체 광전 집적회로 및 그 형성 방법 |
| IL189254A0 (en) * | 2008-02-04 | 2008-08-07 | Garber Valery | Quantum uncooled infra-red photo-detector |
| FR2934712B1 (fr) * | 2008-08-01 | 2010-08-27 | Thales Sa | Procede de fabrication d'un dispositif optique d'analyse comportant un laser a cascades quantiques et un detecteur quantique. |
| JP2016178234A (ja) * | 2015-03-20 | 2016-10-06 | 株式会社東芝 | 半導体受光デバイス |
| US9645082B1 (en) * | 2016-05-20 | 2017-05-09 | Sharp Kabushiki Kaisha | Ballistic carrier spectral sensor |
| CN108630770A (zh) * | 2017-03-15 | 2018-10-09 | 神华集团有限责任公司 | 一种薄膜太阳能电池及其制备方法 |
| CN112382690A (zh) * | 2020-09-30 | 2021-02-19 | 昆明物理研究所 | 一种红外探测器材料的势垒层及其制备方法 |
| CN117352561A (zh) * | 2022-06-27 | 2024-01-05 | 无锡华润上华科技有限公司 | 用于红外探测器的盖帽结构及其形成方法 |
| CN117747693B (zh) * | 2023-11-22 | 2024-06-28 | 广州市南沙区北科光子感知技术研究院 | 一种基于GaSb光子晶体板的多光谱短波红外探测器 |
Family Cites Families (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4903101A (en) * | 1988-03-28 | 1990-02-20 | California Institute Of Technology | Tunable quantum well infrared detector |
| FR2637092B1 (fr) * | 1988-05-11 | 1991-04-12 | Thomson Csf | Modulateur d'onde electromagnetique a puits quantiques couples, et application a un detecteur d'onde electromagnetique |
| FR2653229B1 (fr) * | 1989-10-12 | 1992-01-17 | Thomson Csf | Detecteur capacitif d'onde electromagnetique. |
| FR2655434B1 (fr) * | 1989-12-05 | 1992-02-28 | Thomson Csf | Dispositif optique a puits quantiques et procede de realisation. |
| US5352904A (en) * | 1989-12-27 | 1994-10-04 | Hughes Aircraft Company | Multiple quantum well superlattice infrared detector with low dark current and high quantum efficiency |
| EP0448869A1 (de) * | 1989-12-29 | 1991-10-02 | AT&T Corp. | Optische Vorrichtung mit Gitterstruktur |
| US5412229A (en) * | 1990-08-31 | 1995-05-02 | Sumitomo Electric Industries, Ltd. | Semiconductor light detecting device making use of a photodiode chip |
| US5563423A (en) * | 1991-08-15 | 1996-10-08 | Hughes Aircraft Company | Dark current-free multiquantum well superlattice infrared detector |
| FR2684807B1 (fr) * | 1991-12-10 | 2004-06-11 | Thomson Csf | Transistor a puits quantique a effet tunnel resonnant. |
| FR2693594B1 (fr) * | 1992-07-07 | 1994-08-26 | Thomson Csf | Détecteur d'ondes électromagnétiques à puits quantiques. |
| US5311009A (en) * | 1992-07-31 | 1994-05-10 | At&T Bell Laboratories | Quantum well device for producing localized electron states for detectors and modulators |
| JPH06125141A (ja) * | 1992-08-25 | 1994-05-06 | Olympus Optical Co Ltd | 半導体量子井戸光学素子 |
| JPH06163954A (ja) * | 1992-11-20 | 1994-06-10 | Sanyo Electric Co Ltd | 結晶系シリコン薄膜の形成方法及びこの膜を用いた光起電力装置 |
| US5315128A (en) * | 1993-04-30 | 1994-05-24 | At&T Bell Laboratories | Photodetector with a resonant cavity |
| CA2127596C (en) * | 1993-07-16 | 2003-12-02 | Hui Chun Liu | Multicolour voltage tunable quantum well intersubband infrared photodetector and associated method |
| FR2729789B1 (fr) * | 1993-09-10 | 1998-03-20 | Thomson Csf | Detecteur a puits quantique et procede de realisation |
| US5510627A (en) * | 1994-06-29 | 1996-04-23 | The United States Of America As Represented By The Secretary Of The Navy | Infrared-to-visible converter |
| US5485015A (en) * | 1994-08-25 | 1996-01-16 | The United States Of America As Represented By The Secretary Of The Army | Quantum grid infrared photodetector |
| US5552603A (en) * | 1994-09-15 | 1996-09-03 | Martin Marietta Corporation | Bias and readout for multicolor quantum well detectors |
| FR2734097B1 (fr) * | 1995-05-12 | 1997-06-06 | Thomson Csf | Laser a semiconducteurs |
| JP3018976B2 (ja) * | 1995-12-28 | 2000-03-13 | 富士ゼロックス株式会社 | 半導体受光素子 |
-
1996
- 1996-12-20 FR FR9615738A patent/FR2757684B1/fr not_active Expired - Fee Related
-
1997
- 1997-12-10 IL IL12253997A patent/IL122539A/en not_active IP Right Cessation
- 1997-12-16 US US08/991,301 patent/US5969375A/en not_active Expired - Fee Related
- 1997-12-17 CA CA002222855A patent/CA2222855A1/fr not_active Abandoned
- 1997-12-19 EP EP97403090A patent/EP0849809A1/de not_active Withdrawn
- 1997-12-19 JP JP9351396A patent/JPH10190021A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| FR2757684A1 (fr) | 1998-06-26 |
| CA2222855A1 (fr) | 1998-06-20 |
| IL122539A0 (en) | 1998-06-15 |
| FR2757684B1 (fr) | 1999-03-26 |
| EP0849809A1 (de) | 1998-06-24 |
| JPH10190021A (ja) | 1998-07-21 |
| US5969375A (en) | 1999-10-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5969375A (en) | Infrared detector with non-cooled quantum well structure | |
| US7687871B2 (en) | Reduced dark current photodetector | |
| US5518934A (en) | Method of fabricating multiwavelength infrared focal plane array detector | |
| US5093576A (en) | High sensitivity ultraviolet radiation detector | |
| US5479032A (en) | Multiwavelength infrared focal plane array detector | |
| US11682741B2 (en) | Electromagnetic wave detector | |
| EP0106514B1 (de) | Infrarotdetektor | |
| US20160181448A1 (en) | Photodetector with surface plasmon resonance | |
| US9755090B2 (en) | Quantum detection element with low noise and method for manufacturing such a photodetection element | |
| Ashley et al. | Negative luminescence from In1− xAlxSb and CdxHg1− xTe diodes | |
| JPS6193681A (ja) | 半導体デバイス | |
| US20110221019A1 (en) | Silicon-Based Schottky Barrier Detector With Improved Responsivity | |
| Perera et al. | GaAs multilayer p+-i homojunction far-infrared detectors | |
| US20140217540A1 (en) | Fully depleted diode passivation active passivation architecture | |
| WO2019045652A2 (en) | PHOTODETECTOR | |
| Xie et al. | Performance study of short-wave infrared photodetectors based on InAs/GaSb/AlSb superlattice | |
| JPH0766980B2 (ja) | 量子井戸放射線検出素子 | |
| US4952811A (en) | Field induced gap infrared detector | |
| Park et al. | Normal incident SiGe/Si multiple quantum well infrared detector | |
| US8890272B2 (en) | Photodetector | |
| Elliott et al. | Minimally cooled heterojunction laser heterodyne detectors in metalorganic vapor phase epitaxially grown Hg1-xCdxTe | |
| Musca et al. | Planar p-on-n HgCdTe heterojunction mid-wavelength infrared photodiodes formed using plasma-induced junction isolation | |
| KR101037213B1 (ko) | 감소된 암전류 광검출기 | |
| Averin et al. | ZnSe and ZnCdSe/ZnSe photodetectors for visible spectral range: comparative parameters | |
| Savkina et al. | Photoconductive and Photovoltaic IR Detectors |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FF | Patent granted | ||
| KB | Patent renewed | ||
| KB | Patent renewed | ||
| HC | Change of name of proprietor(s) |
Owner name: THALES Free format text: FORMER NAME:THOMSON-CSF |
|
| MM9K | Patent not in force due to non-payment of renewal fees |