IL122471A - Electron source - Google Patents

Electron source

Info

Publication number
IL122471A
IL122471A IL12247197A IL12247197A IL122471A IL 122471 A IL122471 A IL 122471A IL 12247197 A IL12247197 A IL 12247197A IL 12247197 A IL12247197 A IL 12247197A IL 122471 A IL122471 A IL 122471A
Authority
IL
Israel
Prior art keywords
photocathode
electron
active area
electron source
electrons
Prior art date
Application number
IL12247197A
Other languages
English (en)
Other versions
IL122471A0 (en
Original Assignee
Intevac Inc
Univ Leland Stanford Junior
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intevac Inc, Univ Leland Stanford Junior filed Critical Intevac Inc
Publication of IL122471A0 publication Critical patent/IL122471A0/xx
Publication of IL122471A publication Critical patent/IL122471A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70375—Multiphoton lithography or multiphoton photopolymerization; Imaging systems comprising means for converting one type of radiation into another type of radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H01J27/04—Ion sources; Ion guns using reflex discharge, e.g. Penning ion sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J3/00—Details of electron-optical or ion-optical arrangements common to two or more basic types of discharge tubes or lamps
    • H01J3/02—Electron guns
    • H01J3/021—Electron guns using a field emission, photo emission, or secondary emission electron source
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/06—Electron sources; Electron guns
    • H01J37/073—Electron guns using field emission, photo emission, or secondary emission electron sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/34—Photoemissive electrodes
    • H01J2201/342—Cathodes
    • H01J2201/3421—Composition of the emitting surface
    • H01J2201/3423—Semiconductors, e.g. GaAs, NEA emitters

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Combustion & Propulsion (AREA)
  • Common Detailed Techniques For Electron Tubes Or Discharge Tubes (AREA)
  • Electron Sources, Ion Sources (AREA)
IL12247197A 1995-07-10 1997-12-05 Electron source IL122471A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/499,945 US5684360A (en) 1995-07-10 1995-07-10 Electron sources utilizing negative electron affinity photocathodes with ultra-small emission areas

Publications (2)

Publication Number Publication Date
IL122471A0 IL122471A0 (en) 1998-06-15
IL122471A true IL122471A (en) 2001-07-24

Family

ID=23987412

Family Applications (1)

Application Number Title Priority Date Filing Date
IL12247197A IL122471A (en) 1995-07-10 1997-12-05 Electron source

Country Status (8)

Country Link
US (1) US5684360A (de)
EP (1) EP0873573B1 (de)
JP (1) JP3902230B2 (de)
KR (1) KR100408577B1 (de)
AU (1) AU6398696A (de)
DE (1) DE69635086T2 (de)
IL (1) IL122471A (de)
WO (1) WO1997003453A2 (de)

Families Citing this family (50)

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US5898269A (en) * 1995-07-10 1999-04-27 The Board Of Trustees Of The Leland Stanford Jr. University Electron sources having shielded cathodes
US5932966A (en) * 1995-07-10 1999-08-03 Intevac, Inc. Electron sources utilizing patterned negative electron affinity photocathodes
US5977705A (en) * 1996-04-29 1999-11-02 Litton Systems, Inc. Photocathode and image intensifier tube having an active layer comprised substantially of amorphic diamond-like carbon, diamond, or a combination of both
CN1119829C (zh) * 1996-09-17 2003-08-27 浜松光子学株式会社 光电阴极及装备有它的电子管
US6015323A (en) * 1997-01-03 2000-01-18 Micron Technology, Inc. Field emission display cathode assembly government rights
US6005247A (en) * 1997-10-01 1999-12-21 Intevac, Inc. Electron beam microscope using electron beam patterns
US6005882A (en) * 1997-11-18 1999-12-21 Hyde, Jr.; James R. Electron pump
US6023060A (en) * 1998-03-03 2000-02-08 Etec Systems, Inc. T-shaped electron-beam microcolumn as a general purpose scanning electron microscope
US6376985B2 (en) 1998-03-31 2002-04-23 Applied Materials, Inc. Gated photocathode for controlled single and multiple electron beam emission
US6366018B1 (en) 1998-10-21 2002-04-02 Sarnoff Corporation Apparatus for performing wavelength-conversion using phosphors with light emitting diodes
US6404125B1 (en) 1998-10-21 2002-06-11 Sarnoff Corporation Method and apparatus for performing wavelength-conversion using phosphors with light emitting diodes
US6376984B1 (en) 1999-07-29 2002-04-23 Applied Materials, Inc. Patterned heat conducting photocathode for electron beam source
US6759800B1 (en) 1999-07-29 2004-07-06 Applied Materials, Inc. Diamond supported photocathodes for electron sources
US6448568B1 (en) * 1999-07-30 2002-09-10 Applied Materials, Inc. Electron beam column using high numerical aperture photocathode source illumination
US6476401B1 (en) 1999-09-16 2002-11-05 Applied Materials, Inc. Moving photocathode with continuous regeneration for image conversion in electron beam lithography
US6429443B1 (en) 2000-06-06 2002-08-06 Applied Materials, Inc. Multiple beam electron beam lithography system
US6828574B1 (en) * 2000-08-08 2004-12-07 Applied Materials, Inc. Modulator driven photocathode electron beam generator
US6538256B1 (en) * 2000-08-17 2003-03-25 Applied Materials, Inc. Electron beam lithography system using a photocathode with a pattern of apertures for creating a transmission resonance
US20030178583A1 (en) * 2000-09-18 2003-09-25 Kampherbeek Bert Jan Field emission photo-cathode array for lithography system and lithography system provided with such an array
JP2002150928A (ja) * 2000-11-15 2002-05-24 Hamamatsu Photonics Kk 半導体光電陰極
US6724002B2 (en) 2001-01-31 2004-04-20 Applied Materials, Inc. Multiple electron beam lithography system with multiple beam modulated laser illumination
US20030048427A1 (en) * 2001-01-31 2003-03-13 Applied Materials, Inc. Electron beam lithography system having improved electron gun
US6628072B2 (en) 2001-05-14 2003-09-30 Battelle Memorial Institute Acicular photomultiplier photocathode structure
TW554601B (en) * 2001-07-26 2003-09-21 Matsushita Electric Industrial Co Ltd Semiconductor laser device and method for fabricating the same
US7005795B2 (en) * 2001-11-09 2006-02-28 The Board Of Trustees Of The Leland Stanford Junior University Electron bombardment of wide bandgap semiconductors for generating high brightness and narrow energy spread emission electrons
DE10161680A1 (de) * 2001-12-14 2003-06-26 Ceos Gmbh Linsenanordnung mit lateral verschiebbarer optischer Achse für Teilchenstrahlen
US7161162B2 (en) * 2002-10-10 2007-01-09 Applied Materials, Inc. Electron beam pattern generator with photocathode comprising low work function cesium halide
US6847164B2 (en) * 2002-12-10 2005-01-25 Applied Matrials, Inc. Current-stabilizing illumination of photocathode electron beam source
US7301263B2 (en) * 2004-05-28 2007-11-27 Applied Materials, Inc. Multiple electron beam system with electron transmission gates
US7455565B2 (en) * 2004-10-13 2008-11-25 The Board Of Trustees Of The Leland Stanford Junior University Fabrication of group III-nitride photocathode having Cs activation layer
JP4801996B2 (ja) * 2006-01-05 2011-10-26 株式会社ニューフレアテクノロジー 試料移動機構及び荷電粒子ビーム描画装置
US7696498B2 (en) * 2007-01-11 2010-04-13 Kla-Tencor Technologies Corporation Electron beam lithography method and apparatus using a dynamically controlled photocathode
US7667399B2 (en) * 2007-04-26 2010-02-23 The United States Of America As Represented By The Secretary Of The Navy Large area hybrid photomultiplier tube
KR100964094B1 (ko) * 2008-11-10 2010-06-16 포항공과대학교 산학협력단 펨토초 전자 빔 발생 장치 및 방법
JP6568646B2 (ja) 2016-03-29 2019-08-28 株式会社日立ハイテクノロジーズ 電子顕微鏡
JP6867568B2 (ja) * 2016-11-07 2021-04-28 国立大学法人東京工業大学 ナノスケール光陰極電子源
WO2018155538A1 (ja) * 2017-02-24 2018-08-30 株式会社ニコン 電子ビーム装置及び露光方法、並びにデバイス製造方法
WO2018155537A1 (ja) * 2017-02-24 2018-08-30 株式会社ニコン 電子ビーム装置及び露光方法、並びにデバイス製造方法
CN110582833B (zh) * 2017-12-27 2022-07-01 日商光电魂股份有限公司 试样检查装置及试样检查方法
US10741354B1 (en) * 2018-02-14 2020-08-11 Kla-Tencor Corporation Photocathode emitter system that generates multiple electron beams
US10840055B2 (en) * 2018-03-20 2020-11-17 Kla Corporation System and method for photocathode illumination inspection
DE112018007279B4 (de) 2018-05-21 2024-03-21 Hitachi High-Tech Corporation Elektronenstrahl-Anwendungsgerät
US10714295B2 (en) * 2018-09-18 2020-07-14 Kla-Tencor Corporation Metal encapsulated photocathode electron emitter
US11784022B2 (en) 2019-01-28 2023-10-10 Hitachi High-Tech Corporation Electron beam apparatus
US12165828B2 (en) 2019-10-31 2024-12-10 Hitachi High-Tech Corporation Electron gun and electron beam application apparatus
JP7234099B2 (ja) * 2019-11-12 2023-03-07 株式会社東芝 電子放出素子
WO2021192070A1 (ja) * 2020-03-25 2021-09-30 株式会社日立ハイテク 電子銃及び電子顕微鏡
US10937630B1 (en) 2020-04-27 2021-03-02 John Bennett Modular parallel electron lithography
CN112420466B (zh) * 2020-10-29 2021-11-19 清华大学 表面等离激元诱导的电子发射源
US12334297B2 (en) 2020-12-22 2025-06-17 Hitachi High-Tech Corporation Electron gun and electron beam application device

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4644221A (en) * 1981-05-06 1987-02-17 The United States Of America As Represented By The Secretary Of The Army Variable sensitivity transmission mode negative electron affinity photocathode
US4460831A (en) * 1981-11-30 1984-07-17 Thermo Electron Corporation Laser stimulated high current density photoelectron generator and method of manufacture
GB2111299B (en) * 1981-11-30 1986-07-09 Thermo Electron Corp High current density photoelectron generators
US4616248A (en) * 1985-05-20 1986-10-07 Honeywell Inc. UV photocathode using negative electron affinity effect in Alx Ga1 N
US4820927A (en) * 1985-06-28 1989-04-11 Control Data Corporation Electron beam source employing a photo-emitter cathode
JPS628436A (ja) * 1985-06-28 1987-01-16 コントロ−ル　デ−タ　コ−ポレ−シヨン 電子ビ−ム装置
FR2592217B1 (fr) * 1985-12-20 1988-02-05 Thomson Csf Photocathode a amplification interne
US4906894A (en) * 1986-06-19 1990-03-06 Canon Kabushiki Kaisha Photoelectron beam converting device and method of driving the same
US4868380A (en) * 1988-03-02 1989-09-19 Tektronix, Inc. Optical waveguide photocathode
JP2798696B2 (ja) * 1989-03-31 1998-09-17 浜松ホトニクス株式会社 光電子放射体
US4970392A (en) * 1990-01-17 1990-11-13 Thermo Electron Corporation Stably emitting demountable photoelectron generator
US5039862A (en) * 1990-02-20 1991-08-13 Smith Donald O Switched electron beam source employing a common photo-emitter cathode and method of operation
US5047821A (en) * 1990-03-15 1991-09-10 Intevac, Inc. Transferred electron III-V semiconductor photocathode
US5268570A (en) * 1991-12-20 1993-12-07 Litton Systems, Inc. Transmission mode InGaAs photocathode for night vision system

Also Published As

Publication number Publication date
DE69635086T2 (de) 2006-06-01
DE69635086D1 (de) 2005-09-22
IL122471A0 (en) 1998-06-15
KR19990028925A (ko) 1999-04-15
EP0873573B1 (de) 2005-08-17
EP0873573A4 (de) 2000-03-01
WO1997003453A2 (en) 1997-01-30
JPH11509360A (ja) 1999-08-17
KR100408577B1 (ko) 2004-01-24
AU6398696A (en) 1997-02-10
WO1997003453A3 (en) 1997-04-03
US5684360A (en) 1997-11-04
JP3902230B2 (ja) 2007-04-04
EP0873573A2 (de) 1998-10-28

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