IL122430A - Bispectral electromagnetic wave detector - Google Patents
Bispectral electromagnetic wave detectorInfo
- Publication number
- IL122430A IL122430A IL12243097A IL12243097A IL122430A IL 122430 A IL122430 A IL 122430A IL 12243097 A IL12243097 A IL 12243097A IL 12243097 A IL12243097 A IL 12243097A IL 122430 A IL122430 A IL 122430A
- Authority
- IL
- Israel
- Prior art keywords
- detector
- connection
- detectors
- layer
- common
- Prior art date
Links
- 239000011159 matrix material Substances 0.000 claims description 23
- 239000000758 substrate Substances 0.000 claims description 11
- 239000004020 conductor Substances 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 6
- 238000001514 detection method Methods 0.000 description 7
- 230000005855 radiation Effects 0.000 description 6
- 238000002513 implantation Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000008520 organization Effects 0.000 description 4
- 239000012212 insulator Substances 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 2
- WYTGDNHDOZPMIW-RCBQFDQVSA-N alstonine Natural products C1=CC2=C3C=CC=CC3=NC2=C2N1C[C@H]1[C@H](C)OC=C(C(=O)OC)[C@H]1C2 WYTGDNHDOZPMIW-RCBQFDQVSA-N 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009396 hybridization Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/041—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L31/00
- H01L25/043—Stacked arrangements of devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14649—Infrared imagers
- H01L27/1465—Infrared imagers of the hybrid type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR9614852A FR2756667B1 (fr) | 1996-12-04 | 1996-12-04 | Detecteur d'ondes electromagnetiques bispectral |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| IL122430A0 IL122430A0 (en) | 1998-06-15 |
| IL122430A true IL122430A (en) | 2001-11-25 |
Family
ID=9498309
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IL12243097A IL122430A (en) | 1996-12-04 | 1997-12-03 | Bispectral electromagnetic wave detector |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US6157020A (ja) |
| EP (1) | EP0849799A1 (ja) |
| JP (1) | JPH10190018A (ja) |
| CA (1) | CA2223548A1 (ja) |
| FR (1) | FR2756667B1 (ja) |
| IL (1) | IL122430A (ja) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2782163B1 (fr) * | 1998-08-07 | 2000-12-08 | Schlumberger Ind Sa | Procede de mesure de l'absorption spectrale d'un corps et dispositif pour la mise en oeuvre du procede |
| US6504222B1 (en) * | 1998-12-28 | 2003-01-07 | Fujitsu Limited | Multi-quantum well infrared photo-detector |
| FR2808926B1 (fr) * | 2000-05-12 | 2003-08-01 | Thomson Csf | Detecteur optique polarimetrique |
| FR2808925B1 (fr) | 2000-05-12 | 2003-08-08 | Thomson Csf | Detecteur optique bi-spectral |
| FR2811808B1 (fr) | 2000-07-11 | 2002-10-25 | Thomson Csf | Dispositif d'auto-compensation pour detecteurs soustractifs |
| FR2844635B1 (fr) * | 2002-09-16 | 2005-08-19 | Commissariat Energie Atomique | Dispositif detecteur de rayonnement electromagnetique avec boitier integre comportant deux detecteurs superposes |
| FR2849273B1 (fr) * | 2002-12-19 | 2005-10-14 | Commissariat Energie Atomique | Matrice de detecteurs multispectraux |
| FR2855654B1 (fr) * | 2003-05-27 | 2006-03-03 | Thales Sa | Detecteur d'ondes electromagnetiques avec surface de couplage optique comprenant des motifs lamellaires |
| FR2855653B1 (fr) * | 2003-05-27 | 2005-10-21 | Thales Sa | Structure amorphe de couplage optique pour detecteur d'ondes electromagnetiques et detecteur associe |
| US20050131836A1 (en) * | 2003-12-12 | 2005-06-16 | Armstrong Thomas W. | Method, device and software for ordering and paying for a purchase |
| FR2863774B1 (fr) * | 2003-12-16 | 2006-03-03 | Thales Sa | Photodetecteur a concentration de champ proche |
| US7400023B2 (en) * | 2004-03-18 | 2008-07-15 | Fujifilm Corporation | Photoelectric converting film stack type solid-state image pickup device and method of producing the same |
| US7521658B2 (en) * | 2005-12-01 | 2009-04-21 | Aptina Imaging Corporation | Pixel having photoconductive layers to absorb different ranges of wavelengths |
| FR2937792B1 (fr) * | 2008-10-24 | 2011-03-18 | Thales Sa | Dispositif d'imagerie multispectral a base de multi-puits quantiques |
| FR2937791B1 (fr) * | 2008-10-24 | 2010-11-26 | Thales Sa | Dispositif d'imagerie polarimetrique optimise par rapport au contraste de polarisation |
| US8093559B1 (en) * | 2008-12-02 | 2012-01-10 | Hrl Laboratories, Llc | Methods and apparatus for three-color infrared sensors |
| JP2010133773A (ja) * | 2008-12-03 | 2010-06-17 | Alps Electric Co Ltd | 紫外線センサ |
| JP5630213B2 (ja) * | 2010-10-28 | 2014-11-26 | 富士通株式会社 | 光検出素子 |
| DE102018119710A1 (de) * | 2018-08-14 | 2020-02-20 | Universität Leipzig | Vorrichtung und verfahren zur bestimmung einer wellenlänge einer strahlung |
Family Cites Families (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA1314614C (en) * | 1988-06-06 | 1993-03-16 | Clyde George Bethea | Quantum-well radiation detector |
| DE69020189T2 (de) * | 1989-03-03 | 1996-02-29 | Mitsubishi Electric Corp | Optisches Bauelement. |
| FR2653229B1 (fr) * | 1989-10-12 | 1992-01-17 | Thomson Csf | Detecteur capacitif d'onde electromagnetique. |
| FR2655434B1 (fr) * | 1989-12-05 | 1992-02-28 | Thomson Csf | Dispositif optique a puits quantiques et procede de realisation. |
| US5113076A (en) * | 1989-12-19 | 1992-05-12 | Santa Barbara Research Center | Two terminal multi-band infrared radiation detector |
| US5059786A (en) * | 1990-05-04 | 1991-10-22 | The United States Of America As Represented By The Secretary Of The Navy | Multi-color coincident infrared detector |
| GB2248964A (en) * | 1990-10-17 | 1992-04-22 | Philips Electronic Associated | Plural-wavelength infrared detector devices |
| FR2670006B1 (fr) * | 1990-11-29 | 1993-03-12 | Thomson Csf | Bolometre electronique a puits quantique et application a un detecteur de rayonnements. |
| US5149956A (en) * | 1991-06-12 | 1992-09-22 | Santa Barbara Research Center | Two-color radiation detector array and methods of fabricating same |
| FR2678774B1 (fr) * | 1991-07-05 | 1998-07-10 | Thomson Csf | Detecteur d'ondes electromagnetiques. |
| FR2693594B1 (fr) * | 1992-07-07 | 1994-08-26 | Thomson Csf | Détecteur d'ondes électromagnétiques à puits quantiques. |
| US5457331A (en) * | 1993-04-08 | 1995-10-10 | Santa Barbara Research Center | Dual-band infrared radiation detector optimized for fabrication in compositionally graded HgCdTe |
| CA2127596C (en) * | 1993-07-16 | 2003-12-02 | Hui Chun Liu | Multicolour voltage tunable quantum well intersubband infrared photodetector and associated method |
| FR2729789B1 (fr) * | 1993-09-10 | 1998-03-20 | Thomson Csf | Detecteur a puits quantique et procede de realisation |
| FR2718571B1 (fr) * | 1994-04-08 | 1996-05-15 | Thomson Csf | Composant hybride semiconducteur. |
| US5479032A (en) * | 1994-07-21 | 1995-12-26 | Trustees Of Princeton University | Multiwavelength infrared focal plane array detector |
| US5552603A (en) * | 1994-09-15 | 1996-09-03 | Martin Marietta Corporation | Bias and readout for multicolor quantum well detectors |
| FR2726691B1 (fr) * | 1994-11-08 | 1997-01-24 | Thomson Csf | Photodetecteur de grande dimension et procede de realisation d'un tel photodetecteur |
| FR2726903B1 (fr) * | 1994-11-10 | 1996-12-06 | Thomson Csf | Ecartometre integre |
| US5581084A (en) * | 1995-06-07 | 1996-12-03 | Santa Barbara Research Center | Simultaneous two color IR detector having common middle layer metallic contact |
| US5731621A (en) * | 1996-03-19 | 1998-03-24 | Santa Barbara Research Center | Three band and four band multispectral structures having two simultaneous signal outputs |
-
1996
- 1996-12-04 FR FR9614852A patent/FR2756667B1/fr not_active Expired - Fee Related
-
1997
- 1997-12-02 EP EP97402895A patent/EP0849799A1/fr not_active Ceased
- 1997-12-02 CA CA002223548A patent/CA2223548A1/fr not_active Abandoned
- 1997-12-03 IL IL12243097A patent/IL122430A/en not_active IP Right Cessation
- 1997-12-04 US US08/984,950 patent/US6157020A/en not_active Expired - Lifetime
- 1997-12-04 JP JP9366561A patent/JPH10190018A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| FR2756667B1 (fr) | 1999-02-19 |
| EP0849799A1 (fr) | 1998-06-24 |
| FR2756667A1 (fr) | 1998-06-05 |
| CA2223548A1 (fr) | 1998-06-04 |
| JPH10190018A (ja) | 1998-07-21 |
| US6157020A (en) | 2000-12-05 |
| IL122430A0 (en) | 1998-06-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6157020A (en) | Bispectral electromagnetic wave detector | |
| US6091126A (en) | Electromagnetic wave detector | |
| EP0272506B1 (en) | Thin film transistor array for liquid crystal displays allowing in-process testing, testing method, and information entry system comprising such an array | |
| DE69825367T2 (de) | Gerät und Verfahren zur Verpackung von Festkörperfingerabdrucksensoren | |
| US4688896A (en) | Information conversion device with auxiliary address lines for enhancing manufacturing yield | |
| EP0603972A1 (en) | Imaging device with an electrostatic protection circuit | |
| US4531055A (en) | Self-guarding Schottky barrier infrared detector array | |
| CA1269164A (en) | Photosensitive diode with hydrogenated amorphous silicon layer | |
| EP0256850B1 (en) | Photo-electric converter | |
| JPS6115626B2 (ja) | ||
| JP2856430B2 (ja) | 熱画像作成装置およびその製造方法 | |
| US4451842A (en) | Large scale integrated focal plane | |
| US4247874A (en) | Photoconductor device for imaging a linear object | |
| US4536658A (en) | Hybrid Schottky infrared focal plane array | |
| US4772951A (en) | Solid state image sensor with cell array of amorphous semiconductor photoelectric converting elements | |
| US5712499A (en) | Large photodetector array | |
| US6797938B2 (en) | Polarimetric optical device with an insulating layer between detectors | |
| US5115293A (en) | Solid-state imaging device | |
| US20020008193A1 (en) | BI-spectral optical detector | |
| US4742239A (en) | Line photosensor with crosstalk suppression | |
| US4859851A (en) | Thermal-radiation imaging devices and systems, and the manufacture of such imaging devices | |
| US5602385A (en) | Two wave band radiation detector having two facing photodetectors and method for making same | |
| US4319284A (en) | Repetitive readout of electrostatically stored information | |
| US5371352A (en) | Photodetector comprising a test element group of PN junctions and including a mask having at least one window spaced apart from the PN junctions | |
| JP2806972B2 (ja) | 熱画像作成装置 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| KB | Patent renewed | ||
| KB | Patent renewed | ||
| HC | Change of name of proprietor(s) |
Owner name: THALES Free format text: FORMER NAME:THOMSON-CSF |
|
| KB | Patent renewed | ||
| KB | Patent renewed | ||
| MM9K | Patent not in force due to non-payment of renewal fees |