IL111384A - Detection system for precision measurements and high resolution inspection of high aspect ratio structures using particle beam devices - Google Patents
Detection system for precision measurements and high resolution inspection of high aspect ratio structures using particle beam devicesInfo
- Publication number
- IL111384A IL111384A IL11138494A IL11138494A IL111384A IL 111384 A IL111384 A IL 111384A IL 11138494 A IL11138494 A IL 11138494A IL 11138494 A IL11138494 A IL 11138494A IL 111384 A IL111384 A IL 111384A
- Authority
- IL
- Israel
- Prior art keywords
- detector
- channel plate
- micro channel
- backscattered electrons
- electron beam
- Prior art date
Links
- 238000001514 detection method Methods 0.000 title claims abstract description 25
- 238000005259 measurement Methods 0.000 title abstract description 11
- 238000007689 inspection Methods 0.000 title description 7
- 239000002245 particle Substances 0.000 title description 6
- 238000010894 electron beam technology Methods 0.000 claims abstract description 39
- 238000003384 imaging method Methods 0.000 claims abstract description 28
- 238000000034 method Methods 0.000 claims abstract description 13
- 230000003287 optical effect Effects 0.000 abstract description 13
- 238000013459 approach Methods 0.000 abstract description 6
- 238000013213 extrapolation Methods 0.000 abstract description 4
- 230000001747 exhibiting effect Effects 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 15
- 238000010586 diagram Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 6
- 238000001914 filtration Methods 0.000 description 5
- 238000007654 immersion Methods 0.000 description 5
- 230000004907 flux Effects 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 238000004377 microelectronic Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000001878 scanning electron micrograph Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 238000012876 topography Methods 0.000 description 2
- 238000004804 winding Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000003190 augmentative effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007717 exclusion Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 230000001131 transforming effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/244—Detection characterized by the detecting means
- H01J2237/2444—Electron Multiplier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/244—Detection characterized by the detecting means
- H01J2237/24495—Signal processing, e.g. mixing of two or more signals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/245—Detection characterised by the variable being measured
- H01J2237/24571—Measurements of non-electric or non-magnetic variables
- H01J2237/24585—Other variables, e.g. energy, mass, velocity, time, temperature
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
- Investigating Or Analysing Materials By The Use Of Chemical Reactions (AREA)
- Developing Agents For Electrophotography (AREA)
- Glass Compositions (AREA)
- Optical Radar Systems And Details Thereof (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/141,669 US5493116A (en) | 1993-10-26 | 1993-10-26 | Detection system for precision measurements and high resolution inspection of high aspect ratio structures using particle beam devices |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| IL111384A0 IL111384A0 (en) | 1994-12-29 |
| IL111384A true IL111384A (en) | 1998-07-15 |
Family
ID=22496687
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IL11138494A IL111384A (en) | 1993-10-26 | 1994-10-24 | Detection system for precision measurements and high resolution inspection of high aspect ratio structures using particle beam devices |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US5493116A (de) |
| EP (1) | EP0725975B1 (de) |
| JP (1) | JP3456999B2 (de) |
| AT (1) | ATE189336T1 (de) |
| AU (1) | AU7977494A (de) |
| DE (1) | DE69422825T2 (de) |
| IL (1) | IL111384A (de) |
| WO (1) | WO1995012210A1 (de) |
Families Citing this family (37)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5866904A (en) * | 1990-10-12 | 1999-02-02 | Hitachi, Ltd. | Scanning electron microscope and method for dimension measuring by using the same |
| US6066849A (en) * | 1997-01-16 | 2000-05-23 | Kla Tencor | Scanning electron beam microscope |
| US5995867A (en) | 1997-03-19 | 1999-11-30 | Lucid Inc | Cellular surgery utilizing confocal microscopy |
| JPH1167139A (ja) * | 1997-08-25 | 1999-03-09 | Hitachi Ltd | 走査電子顕微鏡 |
| US6274393B1 (en) | 1998-04-20 | 2001-08-14 | International Business Machines Corporation | Method for measuring submicron images |
| TW402769B (en) * | 1998-06-13 | 2000-08-21 | Samsung Electronics Co Ltd | Apparatus and method for contact failure inspection in semiconductor devices |
| GB2341720A (en) * | 1998-09-16 | 2000-03-22 | Leica Microsys Lithography Ltd | Electron beam aperture element with beam sheilding |
| US6539106B1 (en) | 1999-01-08 | 2003-03-25 | Applied Materials, Inc. | Feature-based defect detection |
| US6344750B1 (en) | 1999-01-08 | 2002-02-05 | Schlumberger Technologies, Inc. | Voltage contrast method for semiconductor inspection using low voltage particle beam |
| US6232787B1 (en) | 1999-01-08 | 2001-05-15 | Schlumberger Technologies, Inc. | Microstructure defect detection |
| US6252412B1 (en) | 1999-01-08 | 2001-06-26 | Schlumberger Technologies, Inc. | Method of detecting defects in patterned substrates |
| US6414308B1 (en) | 1999-03-12 | 2002-07-02 | International Business Machines Corporation | Method for determining opened/unopened semiconductor contacts using a scanning electron microscope |
| KR100546289B1 (ko) | 1999-04-23 | 2006-01-26 | 삼성전자주식회사 | 전자빔 검사 장치를 이용한 콘택홀의 인라인 모니터링 방법 |
| US6586733B1 (en) | 1999-05-25 | 2003-07-01 | Kla-Tencor | Apparatus and methods for secondary electron emission microscope with dual beam |
| US6545491B2 (en) | 1999-08-27 | 2003-04-08 | Samsung Electronics Co., Ltd. | Apparatus for detecting defects in semiconductor devices and methods of using the same |
| US6642150B1 (en) | 1999-12-28 | 2003-11-04 | Taiwan Semiconductor Manufacturing Company | Method for testing for blind hole formed in wafer layer |
| US6847038B2 (en) * | 2002-07-15 | 2005-01-25 | Hitachi, Ltd. | Scanning electron microscope |
| DE60042758D1 (de) | 2000-03-31 | 2009-09-24 | Hitachi Ltd | Abtast-elektronenmikroskop |
| WO2002001597A1 (en) * | 2000-06-27 | 2002-01-03 | Ebara Corporation | Charged particle beam inspection apparatus and method for fabricating device using that inspection apparatus |
| US6548810B2 (en) * | 2001-08-01 | 2003-04-15 | The University Of Chicago | Scanning confocal electron microscope |
| DE10230929A1 (de) * | 2002-07-09 | 2004-01-29 | Leo Elektronenmikroskopie Gmbh | Verfahren zum elektronenmikroskopischen Beobachten einer Halbleiteranordnung und Vorrichtung hierfür |
| US7528614B2 (en) * | 2004-12-22 | 2009-05-05 | Applied Materials, Inc. | Apparatus and method for voltage contrast analysis of a wafer using a tilted pre-charging beam |
| US6797955B1 (en) | 2003-01-30 | 2004-09-28 | Kla-Tencor Technologies Corporation | Filtered e-beam inspection and review |
| US6812462B1 (en) | 2003-02-21 | 2004-11-02 | Kla-Tencor Technologies Corporation | Dual electron beam instrument for multi-perspective |
| US6815675B1 (en) | 2003-04-30 | 2004-11-09 | Kla-Tencor Technologies Corporation | Method and system for e-beam scanning |
| US7019292B1 (en) | 2004-06-15 | 2006-03-28 | Kla-Tencor Technologies Corporation | E-beam detection of defective contacts/vias with flooding and energy filter |
| US7241991B1 (en) | 2005-08-30 | 2007-07-10 | Kla-Tencor Technologies Corporation | Region-of-interest based electron beam metrology |
| JP5054990B2 (ja) * | 2007-01-30 | 2012-10-24 | 株式会社日立ハイテクノロジーズ | 走査形電子顕微鏡 |
| JP2010175249A (ja) * | 2009-01-27 | 2010-08-12 | Hitachi High-Technologies Corp | 試料高さ測定方法及び試料高さ測定装置 |
| JP6035928B2 (ja) * | 2012-07-12 | 2016-11-30 | 株式会社日立ハイテクノロジーズ | 荷電粒子線装置 |
| US9786468B2 (en) * | 2013-02-26 | 2017-10-10 | Hitachi High-Technologies Corporation | Charged particle beam device |
| JP6581940B2 (ja) * | 2016-04-15 | 2019-09-25 | 株式会社日立ハイテクノロジーズ | 電子顕微鏡装置 |
| US10096447B1 (en) * | 2017-08-02 | 2018-10-09 | Kla-Tencor Corporation | Electron beam apparatus with high resolutions |
| JP2019169406A (ja) | 2018-03-26 | 2019-10-03 | 株式会社日立ハイテクノロジーズ | 荷電粒子線装置 |
| DE102018204683B3 (de) * | 2018-03-27 | 2019-08-08 | Carl Zeiss Microscopy Gmbh | Elektronenstrahlmikroskop |
| JP7396954B2 (ja) * | 2020-04-01 | 2023-12-12 | 株式会社日立ハイテク | 荷電粒子線装置 |
| US11626267B2 (en) * | 2021-04-28 | 2023-04-11 | Applied Materials Israel Ltd. | Back-scatter electrons (BSE) imaging with a SEM in tilted mode using cap bias voltage |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5927075B2 (ja) * | 1974-07-17 | 1984-07-03 | ユニチカ株式会社 | 走査型電子顕微鏡 |
| JPS5481075A (en) * | 1977-11-24 | 1979-06-28 | Cho Lsi Gijutsu Kenkyu Kumiai | Method of detecting article image using electron beam |
| JPS59197881A (ja) * | 1983-04-25 | 1984-11-09 | Jeol Ltd | エネルギ−選択機能を有する反射電子検出装置 |
| US4588890A (en) * | 1984-12-31 | 1986-05-13 | International Business Machines Corporation | Apparatus and method for composite image formation by scanning electron beam |
| US4868344A (en) * | 1988-03-30 | 1989-09-19 | Aldrich-Boranes, Inc. | Novel process of producing phenyl or substituted phenylalkylamine pharmaceutical agents and novel chiral intermediates of high enantiomeric purity useful therein |
| US4958079A (en) * | 1989-02-21 | 1990-09-18 | Galileo Electro-Optics Corps. | Detector for scanning electron microscopy apparatus |
| JPH0467550A (ja) * | 1990-07-05 | 1992-03-03 | Fujitsu Ltd | 電子ビーム装置及びその画像取得方法 |
| JP3285092B2 (ja) * | 1990-10-12 | 2002-05-27 | 株式会社日立製作所 | 走査形電子顕微鏡、及び走査形電子顕微鏡による試料像形成方法 |
| US5332898A (en) * | 1993-06-14 | 1994-07-26 | Metrologix | Precision measurement using particle beam devices |
-
1993
- 1993-10-26 US US08/141,669 patent/US5493116A/en not_active Expired - Lifetime
-
1994
- 1994-10-12 JP JP51266595A patent/JP3456999B2/ja not_active Expired - Lifetime
- 1994-10-12 AU AU79774/94A patent/AU7977494A/en not_active Abandoned
- 1994-10-12 EP EP94930746A patent/EP0725975B1/de not_active Expired - Lifetime
- 1994-10-12 DE DE69422825T patent/DE69422825T2/de not_active Expired - Lifetime
- 1994-10-12 WO PCT/US1994/011602 patent/WO1995012210A1/en not_active Ceased
- 1994-10-12 AT AT94930746T patent/ATE189336T1/de not_active IP Right Cessation
- 1994-10-24 IL IL11138494A patent/IL111384A/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| ATE189336T1 (de) | 2000-02-15 |
| US5493116A (en) | 1996-02-20 |
| DE69422825T2 (de) | 2000-08-17 |
| AU7977494A (en) | 1995-05-22 |
| IL111384A0 (en) | 1994-12-29 |
| WO1995012210A1 (en) | 1995-05-04 |
| DE69422825D1 (de) | 2000-03-02 |
| JPH09507331A (ja) | 1997-07-22 |
| EP0725975B1 (de) | 2000-01-26 |
| EP0725975A4 (de) | 1997-12-29 |
| EP0725975A1 (de) | 1996-08-14 |
| JP3456999B2 (ja) | 2003-10-14 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FF | Patent granted | ||
| KB | Patent renewed | ||
| KB | Patent renewed | ||
| KB | Patent renewed | ||
| FF | Patent granted | ||
| KB | Patent renewed | ||
| EXP | Patent expired |