IE53099B1 - Apparatus including improved cathode for continuous deposition of amorphous material - Google Patents
Apparatus including improved cathode for continuous deposition of amorphous materialInfo
- Publication number
- IE53099B1 IE53099B1 IE52282A IE52282A IE53099B1 IE 53099 B1 IE53099 B1 IE 53099B1 IE 52282 A IE52282 A IE 52282A IE 52282 A IE52282 A IE 52282A IE 53099 B1 IE53099 B1 IE 53099B1
- Authority
- IE
- Ireland
- Prior art keywords
- substrate
- chamber
- reaction gas
- cathode
- gas
- Prior art date
Links
- 230000008021 deposition Effects 0.000 title claims abstract description 38
- 239000000463 material Substances 0.000 title claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 99
- 239000007789 gas Substances 0.000 claims abstract description 78
- 239000012495 reaction gas Substances 0.000 claims abstract description 55
- 238000009826 distribution Methods 0.000 claims description 10
- 230000001419 dependent effect Effects 0.000 claims description 2
- 238000000151 deposition Methods 0.000 abstract description 42
- 239000004065 semiconductor Substances 0.000 abstract description 15
- 239000011261 inert gas Substances 0.000 abstract description 13
- 239000000203 mixture Substances 0.000 abstract description 4
- 239000010409 thin film Substances 0.000 abstract description 2
- 238000009827 uniform distribution Methods 0.000 abstract description 2
- 210000002381 plasma Anatomy 0.000 description 42
- 239000010410 layer Substances 0.000 description 39
- 238000006243 chemical reaction Methods 0.000 description 15
- 238000000034 method Methods 0.000 description 14
- 238000004519 manufacturing process Methods 0.000 description 13
- 230000008569 process Effects 0.000 description 9
- 238000012545 processing Methods 0.000 description 8
- 210000004027 cell Anatomy 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- 238000000926 separation method Methods 0.000 description 6
- 239000002019 doping agent Substances 0.000 description 5
- 230000005684 electric field Effects 0.000 description 5
- 239000010408 film Substances 0.000 description 5
- 230000001105 regulatory effect Effects 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000005137 deposition process Methods 0.000 description 4
- 230000002349 favourable effect Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- 238000000354 decomposition reaction Methods 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000000873 masking effect Effects 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910004014 SiF4 Inorganic materials 0.000 description 2
- 239000004809 Teflon Substances 0.000 description 2
- 229920006362 Teflon® Polymers 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000002178 crystalline material Substances 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 229910001092 metal group alloy Inorganic materials 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 238000012864 cross contamination Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000000314 lubricant Substances 0.000 description 1
- 238000003913 materials processing Methods 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000005424 photoluminescence Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 230000008707 rearrangement Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 238000000985 reflectance spectrum Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000005201 scrubbing Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000009718 spray deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
- C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/244,383 US4369730A (en) | 1981-03-16 | 1981-03-16 | Cathode for generating a plasma |
| US06/244,386 US4542711A (en) | 1981-03-16 | 1981-03-16 | Continuous system for depositing amorphous semiconductor material |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| IE820522L IE820522L (en) | 1982-09-16 |
| IE53099B1 true IE53099B1 (en) | 1988-06-22 |
Family
ID=26936496
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IE52282A IE53099B1 (en) | 1981-03-16 | 1982-03-08 | Apparatus including improved cathode for continuous deposition of amorphous material |
Country Status (9)
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4501766A (en) * | 1982-02-03 | 1985-02-26 | Tokyo Shibaura Denki Kabushiki Kaisha | Film depositing apparatus and a film depositing method |
| US4462333A (en) * | 1982-10-27 | 1984-07-31 | Energy Conversion Devices, Inc. | Process gas introduction, confinement and evacuation system for glow discharge deposition apparatus |
| US4483883A (en) * | 1982-12-22 | 1984-11-20 | Energy Conversion Devices, Inc. | Upstream cathode assembly |
| GB2132637A (en) * | 1983-01-03 | 1984-07-11 | Lfe Corp | Process for depositing dielectric films in a plasma glow discharge |
| AU584607B2 (en) * | 1984-02-17 | 1989-06-01 | Kanegafuchi Kagaku Kogyo Kabushiki Kaisha | Film forming method and apparatus |
| US4514437A (en) * | 1984-05-02 | 1985-04-30 | Energy Conversion Devices, Inc. | Apparatus for plasma assisted evaporation of thin films and corresponding method of deposition |
| US4608943A (en) * | 1984-10-24 | 1986-09-02 | Sovonics Solar Systems | Cathode assembly with localized profiling capabilities |
| US4626447A (en) * | 1985-03-18 | 1986-12-02 | Energy Conversion Devices, Inc. | Plasma confining apparatus |
| US4920917A (en) * | 1987-03-18 | 1990-05-01 | Teijin Limited | Reactor for depositing a layer on a moving substrate |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB864869A (en) * | 1958-03-12 | 1961-04-12 | Ohio Commw Eng Co | A method of producing metallic patterns by gas plating |
| US3683846A (en) * | 1968-10-29 | 1972-08-15 | Texaco Inc | Filament plating system |
| US4048953A (en) * | 1974-06-19 | 1977-09-20 | Pfizer Inc. | Apparatus for vapor depositing pyrolytic carbon on porous sheets of carbon material |
| DE2538300B2 (de) * | 1975-08-28 | 1977-06-30 | Dornier System Gmbh, 7990 Friedrichshafen | Verfahren zur herstellung einer solarabsorberschicht |
| JPS5591968A (en) * | 1978-12-28 | 1980-07-11 | Canon Inc | Film forming method by glow discharge |
| US4209357A (en) * | 1979-05-18 | 1980-06-24 | Tegal Corporation | Plasma reactor apparatus |
-
1982
- 1982-03-03 EP EP19820301080 patent/EP0060651B1/en not_active Expired
- 1982-03-03 DE DE8282301080T patent/DE3272239D1/de not_active Expired
- 1982-03-05 IN IN255/CAL/82A patent/IN165372B/en unknown
- 1982-03-08 IE IE52282A patent/IE53099B1/en unknown
- 1982-03-14 EG EG13182A patent/EG15565A/xx active
- 1982-03-15 BR BR8201386A patent/BR8201386A/pt not_active IP Right Cessation
- 1982-03-16 IL IL6526182A patent/IL65261A/xx unknown
- 1982-03-16 MX MX19182782A patent/MX161183A/es unknown
- 1982-03-16 AU AU81541/82A patent/AU543823B2/en not_active Expired
-
1985
- 1985-02-21 AU AU39049/85A patent/AU547920B2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| IL65261A (en) | 1985-07-31 |
| AU543823B2 (en) | 1985-05-02 |
| EP0060651B1 (en) | 1986-07-30 |
| EP0060651A2 (en) | 1982-09-22 |
| BR8201386A (pt) | 1983-01-25 |
| IE820522L (en) | 1982-09-16 |
| IN165372B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1989-10-07 |
| AU8154182A (en) | 1982-11-04 |
| AU547920B2 (en) | 1985-11-14 |
| AU3904985A (en) | 1985-09-19 |
| DE3272239D1 (en) | 1986-09-04 |
| EG15565A (en) | 1986-09-30 |
| EP0060651A3 (en) | 1983-01-26 |
| MX161183A (es) | 1990-08-14 |
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