MX161183A - Sistema mejorado para la depositacion continua de material semiconductor amorfo sobre un substrato - Google Patents

Sistema mejorado para la depositacion continua de material semiconductor amorfo sobre un substrato

Info

Publication number
MX161183A
MX161183A MX19182782A MX19182782A MX161183A MX 161183 A MX161183 A MX 161183A MX 19182782 A MX19182782 A MX 19182782A MX 19182782 A MX19182782 A MX 19182782A MX 161183 A MX161183 A MX 161183A
Authority
MX
Mexico
Prior art keywords
depositation
amorphic
continuous
substrate
semiconductor material
Prior art date
Application number
MX19182782A
Other languages
English (en)
Spanish (es)
Inventor
Masatsugu Izu
David A Gattuso
Timothy J Barnard
Original Assignee
Energy Conversion Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US06/244,383 external-priority patent/US4369730A/en
Priority claimed from US06/244,386 external-priority patent/US4542711A/en
Application filed by Energy Conversion Devices Inc filed Critical Energy Conversion Devices Inc
Publication of MX161183A publication Critical patent/MX161183A/es

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54Apparatus specially adapted for continuous coating
    • C23C16/545Apparatus specially adapted for continuous coating for coating elongated substrates

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
MX19182782A 1981-03-16 1982-03-16 Sistema mejorado para la depositacion continua de material semiconductor amorfo sobre un substrato MX161183A (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/244,383 US4369730A (en) 1981-03-16 1981-03-16 Cathode for generating a plasma
US06/244,386 US4542711A (en) 1981-03-16 1981-03-16 Continuous system for depositing amorphous semiconductor material

Publications (1)

Publication Number Publication Date
MX161183A true MX161183A (es) 1990-08-14

Family

ID=26936496

Family Applications (1)

Application Number Title Priority Date Filing Date
MX19182782A MX161183A (es) 1981-03-16 1982-03-16 Sistema mejorado para la depositacion continua de material semiconductor amorfo sobre un substrato

Country Status (9)

Country Link
EP (1) EP0060651B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
AU (2) AU543823B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
BR (1) BR8201386A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE3272239D1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
EG (1) EG15565A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
IE (1) IE53099B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
IL (1) IL65261A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
IN (1) IN165372B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
MX (1) MX161183A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4501766A (en) * 1982-02-03 1985-02-26 Tokyo Shibaura Denki Kabushiki Kaisha Film depositing apparatus and a film depositing method
US4462333A (en) * 1982-10-27 1984-07-31 Energy Conversion Devices, Inc. Process gas introduction, confinement and evacuation system for glow discharge deposition apparatus
US4483883A (en) * 1982-12-22 1984-11-20 Energy Conversion Devices, Inc. Upstream cathode assembly
GB2132637A (en) * 1983-01-03 1984-07-11 Lfe Corp Process for depositing dielectric films in a plasma glow discharge
AU584607B2 (en) * 1984-02-17 1989-06-01 Kanegafuchi Kagaku Kogyo Kabushiki Kaisha Film forming method and apparatus
US4514437A (en) * 1984-05-02 1985-04-30 Energy Conversion Devices, Inc. Apparatus for plasma assisted evaporation of thin films and corresponding method of deposition
US4608943A (en) * 1984-10-24 1986-09-02 Sovonics Solar Systems Cathode assembly with localized profiling capabilities
US4626447A (en) * 1985-03-18 1986-12-02 Energy Conversion Devices, Inc. Plasma confining apparatus
US4920917A (en) * 1987-03-18 1990-05-01 Teijin Limited Reactor for depositing a layer on a moving substrate

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB864869A (en) * 1958-03-12 1961-04-12 Ohio Commw Eng Co A method of producing metallic patterns by gas plating
US3683846A (en) * 1968-10-29 1972-08-15 Texaco Inc Filament plating system
US4048953A (en) * 1974-06-19 1977-09-20 Pfizer Inc. Apparatus for vapor depositing pyrolytic carbon on porous sheets of carbon material
DE2538300B2 (de) * 1975-08-28 1977-06-30 Dornier System Gmbh, 7990 Friedrichshafen Verfahren zur herstellung einer solarabsorberschicht
JPS5591968A (en) * 1978-12-28 1980-07-11 Canon Inc Film forming method by glow discharge
US4209357A (en) * 1979-05-18 1980-06-24 Tegal Corporation Plasma reactor apparatus

Also Published As

Publication number Publication date
IL65261A (en) 1985-07-31
AU543823B2 (en) 1985-05-02
EP0060651B1 (en) 1986-07-30
EP0060651A2 (en) 1982-09-22
BR8201386A (pt) 1983-01-25
IE820522L (en) 1982-09-16
IE53099B1 (en) 1988-06-22
IN165372B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1989-10-07
AU8154182A (en) 1982-11-04
AU547920B2 (en) 1985-11-14
AU3904985A (en) 1985-09-19
DE3272239D1 (en) 1986-09-04
EG15565A (en) 1986-09-30
EP0060651A3 (en) 1983-01-26

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