IE52012B1 - Method of manufacturing a semiconductor device - Google Patents

Method of manufacturing a semiconductor device

Info

Publication number
IE52012B1
IE52012B1 IE2652/80A IE265280A IE52012B1 IE 52012 B1 IE52012 B1 IE 52012B1 IE 2652/80 A IE2652/80 A IE 2652/80A IE 265280 A IE265280 A IE 265280A IE 52012 B1 IE52012 B1 IE 52012B1
Authority
IE
Ireland
Prior art keywords
transistor
impurities
vertical transistor
region
mesa
Prior art date
Application number
IE2652/80A
Other languages
English (en)
Other versions
IE802652L (en
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of IE802652L publication Critical patent/IE802652L/xx
Publication of IE52012B1 publication Critical patent/IE52012B1/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
    • H10D84/0116—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs the components including integrated injection logic [I2L]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/65—Integrated injection logic
    • H10W10/012—
    • H10W10/13—

Landscapes

  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Element Separation (AREA)
IE2652/80A 1979-12-29 1980-12-16 Method of manufacturing a semiconductor device IE52012B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17119779A JPS5696852A (en) 1979-12-29 1979-12-29 Semiconductor device

Publications (2)

Publication Number Publication Date
IE802652L IE802652L (en) 1981-06-29
IE52012B1 true IE52012B1 (en) 1987-05-27

Family

ID=15918807

Family Applications (1)

Application Number Title Priority Date Filing Date
IE2652/80A IE52012B1 (en) 1979-12-29 1980-12-16 Method of manufacturing a semiconductor device

Country Status (4)

Country Link
EP (1) EP0032016B1 (index.php)
JP (1) JPS5696852A (index.php)
DE (1) DE3071508D1 (index.php)
IE (1) IE52012B1 (index.php)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5792858A (en) * 1980-12-01 1982-06-09 Hitachi Ltd Semiconductor integrated circuit device and manufacture thereof
US6140694A (en) * 1998-12-30 2000-10-31 Philips Electronics North America Corporation Field isolated integrated injection logic gate

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3904450A (en) * 1974-04-26 1975-09-09 Bell Telephone Labor Inc Method of fabricating injection logic integrated circuits using oxide isolation
US3982266A (en) * 1974-12-09 1976-09-21 Texas Instruments Incorporated Integrated injection logic having high inverse current gain
NL7709363A (nl) * 1977-08-25 1979-02-27 Philips Nv Werkwijze ter vervaardiging van een halfgeleider- inrichting en halfgeleiderinrichting vervaardigd onder toepassing van een dergelijke werkwijze.

Also Published As

Publication number Publication date
DE3071508D1 (en) 1986-04-24
IE802652L (en) 1981-06-29
JPS6152575B2 (index.php) 1986-11-13
EP0032016A3 (en) 1983-01-26
EP0032016A2 (en) 1981-07-15
JPS5696852A (en) 1981-08-05
EP0032016B1 (en) 1986-03-19

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Legal Events

Date Code Title Description
MM4A Patent lapsed