HRP20220625T1 - Reaktorski uređaj za kemijsko parno taloženje mikrovalnom plazmom na veliku površinu (la mpcvd) i metoda pružanja iste - Google Patents
Reaktorski uređaj za kemijsko parno taloženje mikrovalnom plazmom na veliku površinu (la mpcvd) i metoda pružanja iste Download PDFInfo
- Publication number
- HRP20220625T1 HRP20220625T1 HRP20220625TT HRP20220625T HRP20220625T1 HR P20220625 T1 HRP20220625 T1 HR P20220625T1 HR P20220625T T HRP20220625T T HR P20220625TT HR P20220625 T HRP20220625 T HR P20220625T HR P20220625 T1 HRP20220625 T1 HR P20220625T1
- Authority
- HR
- Croatia
- Prior art keywords
- crlh
- chamber
- mpcvd
- sub
- reactor device
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims 7
- 238000005268 plasma chemical vapour deposition Methods 0.000 title 1
- 238000000259 microwave plasma-assisted chemical vapour deposition Methods 0.000 claims 15
- 230000008878 coupling Effects 0.000 claims 5
- 238000010168 coupling process Methods 0.000 claims 5
- 238000005859 coupling reaction Methods 0.000 claims 5
- 238000005229 chemical vapour deposition Methods 0.000 claims 2
- 239000002131 composite material Substances 0.000 claims 2
- 230000010363 phase shift Effects 0.000 claims 1
- 239000010453 quartz Substances 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32211—Means for coupling power to the plasma
- H01J37/32229—Waveguides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32266—Means for controlling power transmitted to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
- H01J2237/3321—CVD [Chemical Vapor Deposition]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Plasma Technology (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Devices And Processes Conducted In The Presence Of Fluids And Solid Particles (AREA)
Claims (18)
1. Reaktorski uređaj (1) za kemijsko parno taloženje mikrovalnom plazmom na veliku površinu, LA MPCVD, koji obuhvaća;
reaktorsku komoru (2) prilagođenu za dovođenje regije plazme u unutrašnjost reaktorske komore pomoću elektromagnetske energije na prvoj frekvenciji,
i
kompozitni desno/ljevoruki, CRLH, valovodni sektor (3) prilagođen za rad s beskonačnom valnom duljinom na prvoj frekvenciji i imajući u zidu spojno sredstvo (4) postavljeno za spajanje elektromagnetske energije iz unutrašnjosti CRLH valovodnog sektora u unutrašnjost reaktorske komore.
2. LA MPCVD reaktorski uređaj prema patentnom zahtjevu 1, pri čemu spojno sredstvo obuhvaća mnoštvo međusobno razmaknutih spojnica elektromagnetske energije.
3. LA MPCVD reaktorski uređaj prema patentnim zahtjevima 1 ili 2, pri čemu spojno sredstvo obuhvaća utor u zidu CRLH valovodnog sektora.
4. LA MPCVD reaktorski uređaj prema patentnim zahtjevima 1, 2 ili 3, koji obuhvaća izvor elektromagnetske energije imajući izlaz energije, i pri čemu jedan ili više CRLH valovoda unutar CRLH valovodnog sektora ima kraj prvog ulaza energije spojen na izlaz energije.
5. LA MPCVD reaktorski uređaj prema patentnom zahtjevu 4, pri čemu jedan ili više CRLH valovoda u CRLH valovodnom sektoru ima drugi, skraćeni kraj.
6. LA MPCVD reaktorski uređaj prema bilo kojem od prethodnih patentnih zahtjeva, pri čemu reaktorska komora obuhvaća prvu pod-komoru i drugu pod-komoru, pri čemu prva pod-komora obuhvaća spojno sredstvo, i druga pod-komora je prilagođena da obuhvaća regiju plazme, i pri čemu je elektromagnetska energija pružena od CRLH valovodnog sektora u drugu pod-komoru putem prve pod-komore.
7. LA MPCVD reaktorski uređaj prema patentnom zahtjevu 6, pri čemu prva pod-komora I druga pod-komora imaju isto područje poprečnog presjeka.
8. LA MPCVD reaktorski uređaj prema patentnim zahtjevima 6 ili 7, pri čemu druga pod-komora obuhvaća kvarcne prozore posložene da odvajaju regiju plazme od atmosferskog tlaka.
9. LA MPCVD reaktorski uređaj prema bilo kojim od gornjih patentnih zahtjeva 6 do 8, pri čemu su prva pod-komora i druga pod-komora posložene jedna na drugu i međusobno povezane na krajevima istih.
10. LA MPCVD reaktorski uređaj prema bilo kojem od prethodnih patentnih zahtjeva, pri čemu je elektromagnetska energija mikrovalna energija na prvoj frekvenciji.
11. LA MPCVD reaktorski uređaj prema bilo kojem od prethodnih patentnih zahtjeva, pri čemu je prva frekvencija 2.45 GHz.
12. LA MPCVD reaktorski uređaj prema bilo kojem od prethodnih patentnih zahtjeva, pri čemu CRLH valovodni sektor obuhvaća mnoštvo CRLH valovoda posloženih jedan pokraj drugog.
13. LA MPCVD reaktorski uređaj prema bilo kojem od gornjih patentnih zahtjeva, pri čemu CRLH valovodni sektor obuhvaća periodično kaskadne jedinične ćelije u kojima se u periodično kaskadni odnos jediničnih ćelija između frekvencije i faznog pomaka može konfigurirati.
14. LA MPCVD reaktorski uređaj prema patentnom zahtjevu 13, pri čemu periodično kaskadne jedinične ćelije obuhvaćaju elemente za podešavanje koji se konfiguriraju kako bi se izmijenile unutarnje dimenzije periodično kaskadnih jediničnih ćelija .
15. LA MPCVD reaktorski uređaj prema patentnom zahtjevu 14, pri čemu elementi za podešavanje obuhvaćaju par zaglavaka koji su raspoređeni da ih se umetne u periodično kaskadne jedinične ćelije.
16. Metoda za pružanje kemijskog parnog taloženja plazmom na veliku površinu u reaktorskoj komori (2)
pri čemu je reaktorska komora raspoređena za pružanje regije plazme u unutrašnjost reaktorske komore pomoću elektromagnetske energije na prvoj frekvenciji,
pri čemu metoda obuhvaća:
spajanje elektromagnetske energije iz unutrašnjosti kompozitnog desno/ljevorukog, CRLH, valovodnog sektora (3) na unutrašnjost reaktorske komore putem spojnog sredstva zida (4) CRLH valovodnog sektora, pri čemu je CRLH valovodni sektor raspoređen za rad s beskonačnom valnom duljinom na prvoj frekvenciji.
17. Metoda prema patentnom zahtjevu 16, pri čemu CRLH valovodni sektor obuhvaća periodično kaskadne jedinične ćelije koje obuhvaćaju elemente za podešavanje koji se konfiguriraju kako bi se izmijenile unutarnje dimenzije periodično kaskadnih jediničnih ćelija, pri čemu metoda obuhvaća prilagođavanje elemenata za podešavanje.
18. Metoda prema patentnom zahtjevu 17, pri čemu izvor elektromagnetske energije imajući izlaz energije spojen na ulaz CRLH valovodnog sektora, pri čemu metoda obuhvaća minimiziranje izmjerene reflektirane snage tako da se iterativno prilagođavaju elementi za podešavanje i impedancija koja odgovara izvoru elektromagnetske energije s CRLH valovodnim sektorom.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NO20180654A NO345052B1 (en) | 2018-05-08 | 2018-05-08 | Large area microwave plasma chemical vapour deposition (la mpcvd) reactor apparatus and method for providing same |
| EP19727111.7A EP3791421B1 (en) | 2018-05-08 | 2019-05-08 | Large area microwave plasma chemical vapour deposition (la mpcvd) reactor apparatus and method for providing same |
| PCT/NO2019/050103 WO2019216772A1 (en) | 2018-05-08 | 2019-05-08 | Large area microwave plasma cvd apparatus and corresponding method for providing such deposition |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| HRP20220625T1 true HRP20220625T1 (hr) | 2022-06-24 |
Family
ID=66668997
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| HRP20220625TT HRP20220625T1 (hr) | 2018-05-08 | 2019-05-08 | Reaktorski uređaj za kemijsko parno taloženje mikrovalnom plazmom na veliku površinu (la mpcvd) i metoda pružanja iste |
Country Status (15)
| Country | Link |
|---|---|
| US (1) | US20210057190A1 (hr) |
| EP (1) | EP3791421B1 (hr) |
| JP (1) | JP7438136B2 (hr) |
| CN (1) | CN112088419A (hr) |
| DK (1) | DK3791421T3 (hr) |
| ES (1) | ES2912575T3 (hr) |
| HR (1) | HRP20220625T1 (hr) |
| IL (1) | IL278483B (hr) |
| LT (1) | LT3791421T (hr) |
| NO (1) | NO345052B1 (hr) |
| PL (1) | PL3791421T3 (hr) |
| PT (1) | PT3791421T (hr) |
| RS (1) | RS63181B1 (hr) |
| SG (1) | SG11202010162XA (hr) |
| WO (1) | WO2019216772A1 (hr) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115354311A (zh) * | 2022-07-15 | 2022-11-18 | 杭州电子科技大学 | 复合左右手波导的缝隙阵列天线表面波等离子沉积装置 |
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| US5230740A (en) | 1991-12-17 | 1993-07-27 | Crystallume | Apparatus for controlling plasma size and position in plasma-activated chemical vapor deposition processes comprising rotating dielectric |
| US5302803A (en) * | 1991-12-23 | 1994-04-12 | Consortium For Surface Processing, Inc. | Apparatus and method for uniform microwave plasma processing using TE1101 modes |
| JP3176493B2 (ja) * | 1993-09-17 | 2001-06-18 | 株式会社神戸製鋼所 | 高配向性ダイヤモンド薄膜の形成方法 |
| JPH08138889A (ja) * | 1994-09-16 | 1996-05-31 | Daihen Corp | プラズマ処理装置 |
| EP0702393A3 (en) * | 1994-09-16 | 1997-03-26 | Daihen Corp | Plasma processing apparatus for introducing a micrometric wave from a rectangular waveguide, through an elongated sheet into the plasma chamber |
| US5643365A (en) * | 1996-07-25 | 1997-07-01 | Ceram Optec Industries Inc | Method and device for plasma vapor chemical deposition of homogeneous films on large flat surfaces |
| US6026762A (en) * | 1997-04-23 | 2000-02-22 | Applied Materials, Inc. | Apparatus for improved remote microwave plasma source for use with substrate processing systems |
| DE19802971C2 (de) * | 1998-01-27 | 1999-12-02 | Fraunhofer Ges Forschung | Plasmareaktor |
| JP2007180034A (ja) | 2000-10-13 | 2007-07-12 | Tokyo Electron Ltd | プラズマ処理装置 |
| JP2004200646A (ja) | 2002-12-05 | 2004-07-15 | Advanced Lcd Technologies Development Center Co Ltd | プラズマ処理装置およびプラズマ処理方法 |
| TW200415726A (en) * | 2002-12-05 | 2004-08-16 | Adv Lcd Tech Dev Ct Co Ltd | Plasma processing apparatus and plasma processing method |
| FR2849867B1 (fr) | 2003-01-10 | 2005-03-25 | Centre Nat Rech Scient | Croissance diamant a grande vitesse par plasma micro-onde en regime pulse. |
| US20050000446A1 (en) * | 2003-07-04 | 2005-01-06 | Yukihiko Nakata | Plasma processing apparatus and plasma processing method |
| KR100520635B1 (ko) | 2003-12-10 | 2005-10-13 | 삼성전자주식회사 | 플레어 각이 변화하는 혼 안테나를 구비하는 전자사이클로트론 공명 장비 |
| WO2009142895A2 (en) * | 2008-05-20 | 2009-11-26 | The Regents Of The University Of California | Compact dual-band metamaterial-based hybrid ring coupler |
| GB201021855D0 (en) * | 2010-12-23 | 2011-02-02 | Element Six Ltd | Microwave power delivery system for plasma reactors |
| GB201021865D0 (en) * | 2010-12-23 | 2011-02-02 | Element Six Ltd | A microwave plasma reactor for manufacturing synthetic diamond material |
| GB201021853D0 (en) * | 2010-12-23 | 2011-02-02 | Element Six Ltd | A microwave plasma reactor for manufacturing synthetic diamond material |
| TWI465158B (zh) * | 2011-01-12 | 2014-12-11 | Ind Tech Res Inst | 微波電漿激發裝置 |
| CN103526187A (zh) | 2013-10-12 | 2014-01-22 | 武汉工程大学 | 一种大面积微波等离子体化学气相沉积系统 |
| GB201410703D0 (en) * | 2014-06-16 | 2014-07-30 | Element Six Technologies Ltd | A microwave plasma reactor for manufacturing synthetic diamond material |
| CN104934702A (zh) * | 2015-06-25 | 2015-09-23 | 杭州电子科技大学 | 一种左右手复合传输线siw双圆极化天线 |
| KR101638051B1 (ko) * | 2015-07-23 | 2016-07-08 | 서울대학교산학협력단 | 복합 좌우현 전송선로 및 접지면을 이용한 비대칭 공면 도파관 안테나 |
| KR101781290B1 (ko) * | 2016-02-29 | 2017-09-22 | 부산대학교 산학협력단 | 대면적 표면파 플라즈마 장치 및 이를 이용하여 전기전도성 다이아몬드 코팅방법 |
| CN106202634A (zh) * | 2016-06-28 | 2016-12-07 | 中国人民解放军空军工程大学 | 一种crlh传输线结构的等效电路结构及其设计方法 |
| CN107475692A (zh) * | 2017-08-14 | 2017-12-15 | 甘志银 | 一种金刚石薄膜微波等离子体化学气相沉积方法及装置 |
-
2018
- 2018-05-08 NO NO20180654A patent/NO345052B1/no unknown
-
2019
- 2019-05-08 ES ES19727111T patent/ES2912575T3/es active Active
- 2019-05-08 RS RS20220420A patent/RS63181B1/sr unknown
- 2019-05-08 WO PCT/NO2019/050103 patent/WO2019216772A1/en unknown
- 2019-05-08 PL PL19727111T patent/PL3791421T3/pl unknown
- 2019-05-08 US US17/052,346 patent/US20210057190A1/en active Pending
- 2019-05-08 CN CN201980029395.9A patent/CN112088419A/zh active Pending
- 2019-05-08 EP EP19727111.7A patent/EP3791421B1/en active Active
- 2019-05-08 HR HRP20220625TT patent/HRP20220625T1/hr unknown
- 2019-05-08 JP JP2020562608A patent/JP7438136B2/ja active Active
- 2019-05-08 SG SG11202010162XA patent/SG11202010162XA/en unknown
- 2019-05-08 DK DK19727111.7T patent/DK3791421T3/da active
- 2019-05-08 LT LTEPPCT/NO2019/050103T patent/LT3791421T/lt unknown
- 2019-05-08 PT PT197271117T patent/PT3791421T/pt unknown
-
2020
- 2020-11-04 IL IL278483A patent/IL278483B/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| JP7438136B2 (ja) | 2024-02-26 |
| EP3791421B1 (en) | 2022-02-16 |
| DK3791421T3 (da) | 2022-05-09 |
| ES2912575T3 (es) | 2022-05-26 |
| LT3791421T (lt) | 2022-05-25 |
| PT3791421T (pt) | 2022-05-04 |
| IL278483B (en) | 2022-03-01 |
| JP2021523296A (ja) | 2021-09-02 |
| WO2019216772A1 (en) | 2019-11-14 |
| NO345052B1 (en) | 2020-09-07 |
| US20210057190A1 (en) | 2021-02-25 |
| CN112088419A (zh) | 2020-12-15 |
| PL3791421T3 (pl) | 2022-06-27 |
| NO20180654A1 (en) | 2019-11-11 |
| SG11202010162XA (en) | 2020-11-27 |
| EP3791421A1 (en) | 2021-03-17 |
| RS63181B1 (sr) | 2022-06-30 |
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