HRP20100286B1 - Light or radiation detector, and method for manufacturing the same - Google Patents

Light or radiation detector, and method for manufacturing the same

Info

Publication number
HRP20100286B1
HRP20100286B1 HRP20100286AA HRP20100286A HRP20100286B1 HR P20100286 B1 HRP20100286 B1 HR P20100286B1 HR P20100286A A HRP20100286A A HR P20100286AA HR P20100286 A HRP20100286 A HR P20100286A HR P20100286 B1 HRP20100286 B1 HR P20100286B1
Authority
HR
Croatia
Prior art keywords
light
radiation detector
manufacturing
same
molding structure
Prior art date
Application number
HRP20100286AA
Other languages
Croatian (hr)
Inventor
Toshinori Yoshimuta
Original Assignee
Shimadzu Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shimadzu Corporation filed Critical Shimadzu Corporation
Publication of HRP20100286A2 publication Critical patent/HRP20100286A2/en
Publication of HRP20100286B1 publication Critical patent/HRP20100286B1/en

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/24—Measuring radiation intensity with semiconductor detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14618—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14665—Imagers using a photoconductor layer
    • H01L27/14676—X-ray, gamma-ray or corpuscular radiation imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/10—Methods of surface bonding and/or assembly therefor

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Measurement Of Radiation (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)

Abstract

In the light or radiation detector of this invention, each of the molding structure, the first member, and the second member is formed such that the molding structure to protect the conversion layer and voltage application electrode has the resistance higher than the first member composed of the planar conductive buffer that is laminated on the (light or radiation) incident surface side of the molding structure, and that the first member mentioned above has the resistance higher than the second member composed of the planar conductive member that is laminated on the incident surface side of the first member. Consequently, occurrence of the noise from the static electricity may be suppressed.
HRP20100286AA 2007-10-23 2010-05-21 Light or radiation detector, and method for manufacturing the same HRP20100286B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2007/070609 WO2009054042A1 (en) 2007-10-23 2007-10-23 Light or radiation detector, and method for manufacturing the same

Publications (2)

Publication Number Publication Date
HRP20100286A2 HRP20100286A2 (en) 2010-09-30
HRP20100286B1 true HRP20100286B1 (en) 2013-03-31

Family

ID=40579152

Family Applications (1)

Application Number Title Priority Date Filing Date
HRP20100286AA HRP20100286B1 (en) 2007-10-23 2010-05-21 Light or radiation detector, and method for manufacturing the same

Country Status (7)

Country Link
US (1) US8357909B2 (en)
EP (1) EP2209021B1 (en)
JP (1) JP4569712B2 (en)
CN (1) CN101688919B (en)
AT (1) ATE537467T1 (en)
HR (1) HRP20100286B1 (en)
WO (1) WO2009054042A1 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010070759A1 (en) * 2008-12-18 2010-06-24 株式会社島津製作所 Method for manufacturing optical matrix device
JP5694892B2 (en) * 2011-10-19 2015-04-01 富士フイルム株式会社 Radiation imaging equipment
US10481280B2 (en) * 2016-07-07 2019-11-19 Canon Kabushiki Kaisha Radiation detecting apparatus, radiation detecting system, and manufacturing method for radiation detecting apparatus
JP6377101B2 (en) * 2016-07-07 2018-08-22 キヤノン株式会社 Radiation detection apparatus and radiation detection system
JP7292868B2 (en) * 2018-12-18 2023-06-19 キヤノン株式会社 Detector

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6885005B2 (en) * 2001-10-22 2005-04-26 Shimadzu Corporation Radiation detector
JP2005268271A (en) * 2004-03-16 2005-09-29 Shimadzu Corp Two-dimensional detector for light or radiation
JP2007139604A (en) * 2005-11-18 2007-06-07 Konica Minolta Medical & Graphic Inc Scintillator plate for radiation

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3737343B2 (en) * 1999-09-08 2006-01-18 シャープ株式会社 2D image detector
US6681992B2 (en) * 2000-08-03 2004-01-27 Tomomi Iihama Image reading apparatus
JP3678162B2 (en) * 2001-04-12 2005-08-03 株式会社島津製作所 Radiation detector
JP4280024B2 (en) 2001-04-23 2009-06-17 株式会社東芝 X-ray flat panel detector
JP4211435B2 (en) * 2002-08-30 2009-01-21 株式会社島津製作所 Radiation detector
JP3861829B2 (en) 2003-03-05 2006-12-27 ブラザー工業株式会社 Recording media cassette
JP2005241334A (en) 2004-02-25 2005-09-08 Shimadzu Corp Radiation detection instrument
US20050184244A1 (en) * 2004-02-25 2005-08-25 Shimadzu Corporation Radiation detector and light or radiation detector

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6885005B2 (en) * 2001-10-22 2005-04-26 Shimadzu Corporation Radiation detector
JP2005268271A (en) * 2004-03-16 2005-09-29 Shimadzu Corp Two-dimensional detector for light or radiation
JP2007139604A (en) * 2005-11-18 2007-06-07 Konica Minolta Medical & Graphic Inc Scintillator plate for radiation

Also Published As

Publication number Publication date
EP2209021A1 (en) 2010-07-21
CN101688919A (en) 2010-03-31
JP4569712B2 (en) 2010-10-27
US8357909B2 (en) 2013-01-22
EP2209021B1 (en) 2011-12-14
JPWO2009054042A1 (en) 2011-03-03
EP2209021A4 (en) 2011-02-16
CN101688919B (en) 2012-10-17
ATE537467T1 (en) 2011-12-15
HRP20100286A2 (en) 2010-09-30
US20100243893A1 (en) 2010-09-30
WO2009054042A1 (en) 2009-04-30

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Legal Events

Date Code Title Description
A1OB Publication of a patent application
AIPI Request for the grant of a patent on the basis of a substantive examination of a patent application
B1PR Patent granted
ODRP Renewal fee for the maintenance of a patent

Payment date: 20150904

Year of fee payment: 9

PBON Lapse due to non-payment of renewal fee

Effective date: 20161023