HK79689A - Pin photovoltaic cell having a hetero junction of amorphous silicon compound and amorphous silicon - Google Patents
Pin photovoltaic cell having a hetero junction of amorphous silicon compound and amorphous siliconInfo
- Publication number
- HK79689A HK79689A HK796/89A HK79689A HK79689A HK 79689 A HK79689 A HK 79689A HK 796/89 A HK796/89 A HK 796/89A HK 79689 A HK79689 A HK 79689A HK 79689 A HK79689 A HK 79689A
- Authority
- HK
- Hong Kong
- Prior art keywords
- amorphous silicon
- photovoltaic cell
- hetero junction
- silicon compound
- pin photovoltaic
- Prior art date
Links
- 229910021417 amorphous silicon Inorganic materials 0.000 title 2
- 125000005842 heteroatom Chemical group 0.000 title 1
- 150000003377 silicon compounds Chemical class 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
- H01L31/204—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table including AIVBIV alloys, e.g. SiGe, SiC
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55171375A JPS5795677A (en) | 1980-12-03 | 1980-12-03 | Amorphous silicon type photoelectric tranducer |
JP55181150A JPS57104276A (en) | 1980-12-19 | 1980-12-19 | Amorphous silicon thin film photoelectric element |
JP56012313A JPS57126175A (en) | 1981-01-29 | 1981-01-29 | Amorphous silicon carbide/amorophous silicon hetero junction optoelectric element |
JP56022690A JPS57136377A (en) | 1981-02-17 | 1981-02-17 | Amorphous silicon nitride/amorphous silicon heterojunction photoelectric element |
Publications (1)
Publication Number | Publication Date |
---|---|
HK79689A true HK79689A (en) | 1989-10-13 |
Family
ID=27455773
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
HK796/89A HK79689A (en) | 1980-12-03 | 1989-10-05 | Pin photovoltaic cell having a hetero junction of amorphous silicon compound and amorphous silicon |
Country Status (6)
Country | Link |
---|---|
EP (1) | EP0053402B1 (xx) |
AU (1) | AU558650B2 (xx) |
CA (1) | CA1176740A (xx) |
DE (1) | DE3176919D1 (xx) |
HK (1) | HK79689A (xx) |
SG (1) | SG65589G (xx) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
IE53485B1 (en) * | 1981-02-12 | 1988-11-23 | Energy Conversion Devices Inc | Improved photoresponsive amorphous alloys |
US4453173A (en) * | 1982-04-27 | 1984-06-05 | Rca Corporation | Photocell utilizing a wide-bandgap semiconductor material |
JPS59103384A (ja) * | 1982-12-04 | 1984-06-14 | Hoya Corp | 太陽電池用透明導電膜 |
JPS59108370A (ja) * | 1982-12-14 | 1984-06-22 | Kanegafuchi Chem Ind Co Ltd | 光起電力装置 |
GB2137810B (en) * | 1983-03-08 | 1986-10-22 | Agency Ind Science Techn | A solar cell of amorphous silicon |
US4514748A (en) * | 1983-11-21 | 1985-04-30 | At&T Bell Laboratories | Germanium p-i-n photodetector on silicon substrate |
JPS6384075A (ja) * | 1986-09-26 | 1988-04-14 | Sanyo Electric Co Ltd | 光起電力装置 |
US5155567A (en) * | 1990-01-17 | 1992-10-13 | Ricoh Company, Ltd. | Amorphous photoconductive material and photosensor employing the photoconductive material |
JP3099957B2 (ja) * | 1990-01-17 | 2000-10-16 | 株式会社リコー | 光導電部材 |
EP0631329A1 (en) * | 1993-06-25 | 1994-12-28 | Showa Shell Sekiyu K.K. | Process for producing amorphous silicon solar cell |
WO1997021251A1 (fr) * | 1995-12-06 | 1997-06-12 | Jury Anatolievich Malov | Convertisseur d'energie lumineuse en energie electrique sur des porteurs balistiques chauds |
WO2011001842A1 (en) | 2009-07-03 | 2011-01-06 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and manufacturing method thereof |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4064521A (en) * | 1975-07-28 | 1977-12-20 | Rca Corporation | Semiconductor device having a body of amorphous silicon |
US4109271A (en) * | 1977-05-27 | 1978-08-22 | Rca Corporation | Amorphous silicon-amorphous silicon carbide photovoltaic device |
CA1123525A (en) * | 1977-10-12 | 1982-05-11 | Stanford R. Ovshinsky | High temperature amorphous semiconductor member and method of making same |
US4226898A (en) * | 1978-03-16 | 1980-10-07 | Energy Conversion Devices, Inc. | Amorphous semiconductors equivalent to crystalline semiconductors produced by a glow discharge process |
-
1981
- 1981-12-02 CA CA000391378A patent/CA1176740A/en not_active Expired
- 1981-12-03 EP EP81110111A patent/EP0053402B1/en not_active Expired
- 1981-12-03 DE DE8181110111T patent/DE3176919D1/de not_active Expired
- 1981-12-03 AU AU78224/81A patent/AU558650B2/en not_active Expired
-
1989
- 1989-09-20 SG SG65589A patent/SG65589G/en unknown
- 1989-10-05 HK HK796/89A patent/HK79689A/xx unknown
Also Published As
Publication number | Publication date |
---|---|
AU7822481A (en) | 1982-06-10 |
DE3176919D1 (en) | 1988-12-01 |
EP0053402B1 (en) | 1988-10-26 |
EP0053402A3 (en) | 1983-03-30 |
SG65589G (en) | 1990-01-26 |
CA1176740A (en) | 1984-10-23 |
AU558650B2 (en) | 1987-02-05 |
EP0053402A2 (en) | 1982-06-09 |
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