AU588400B2 - High-voltage photovoltaic cell having a hetero junction of amorphous semiconductor and amorphous silicon - Google Patents
High-voltage photovoltaic cell having a hetero junction of amorphous semiconductor and amorphous siliconInfo
- Publication number
- AU588400B2 AU588400B2 AU65542/86A AU6554286A AU588400B2 AU 588400 B2 AU588400 B2 AU 588400B2 AU 65542/86 A AU65542/86 A AU 65542/86A AU 6554286 A AU6554286 A AU 6554286A AU 588400 B2 AU588400 B2 AU 588400B2
- Authority
- AU
- Australia
- Prior art keywords
- photovoltaic cell
- amorphous
- hetero junction
- amorphous silicon
- voltage photovoltaic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910021417 amorphous silicon Inorganic materials 0.000 title 1
- 125000005842 heteroatom Chemical group 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
- H01L31/204—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table including AIVBIV alloys, e.g. SiGe, SiC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55171375A JPS5795677A (en) | 1980-12-03 | 1980-12-03 | Amorphous silicon type photoelectric tranducer |
JP55-171375 | 1980-12-03 | ||
JP55-181150 | 1980-12-19 | ||
JP56-12313 | 1981-01-29 | ||
JP56-22690 | 1981-02-17 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU78224/81A Division AU558650B2 (en) | 1980-12-03 | 1981-12-03 | Amorphous semiconductor high-voltage photovoltaic cell |
Publications (2)
Publication Number | Publication Date |
---|---|
AU6554286A AU6554286A (en) | 1987-02-19 |
AU588400B2 true AU588400B2 (en) | 1989-09-14 |
Family
ID=15922010
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU65542/86A Expired AU588400B2 (en) | 1980-12-03 | 1986-11-20 | High-voltage photovoltaic cell having a hetero junction of amorphous semiconductor and amorphous silicon |
Country Status (2)
Country | Link |
---|---|
JP (1) | JPS5795677A (en) |
AU (1) | AU588400B2 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62268128A (en) * | 1986-05-15 | 1987-11-20 | Sharp Corp | Manufacture of microcrystal silicon carbide film |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AU547173B2 (en) * | 1980-09-09 | 1985-10-10 | Energy Conversion Devices Inc. | Band gap of amorphous alloys and devices |
AU554181B2 (en) * | 1980-09-25 | 1986-08-14 | Canon Kabushiki Kaisha | Photoconductive device |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4064521A (en) * | 1975-07-28 | 1977-12-20 | Rca Corporation | Semiconductor device having a body of amorphous silicon |
JPS5337718A (en) * | 1976-09-21 | 1978-04-07 | Asahi Glass Co Ltd | Laminated glass with heating wire incorporated therein |
US4109271A (en) * | 1977-05-27 | 1978-08-22 | Rca Corporation | Amorphous silicon-amorphous silicon carbide photovoltaic device |
US4167015A (en) * | 1978-04-24 | 1979-09-04 | Rca Corporation | Cermet layer for amorphous silicon solar cells |
US4162505A (en) * | 1978-04-24 | 1979-07-24 | Rca Corporation | Inverted amorphous silicon solar cell utilizing cermet layers |
US4163677A (en) * | 1978-04-28 | 1979-08-07 | Rca Corporation | Schottky barrier amorphous silicon solar cell with thin doped region adjacent metal Schottky barrier |
JPS5568681A (en) * | 1978-11-17 | 1980-05-23 | Yoshihiro Hamakawa | Amorphous silicon solar battery and fabricating the same |
JPS5578524A (en) * | 1978-12-10 | 1980-06-13 | Shunpei Yamazaki | Manufacture of semiconductor device |
JPS55127080A (en) * | 1979-03-26 | 1980-10-01 | Matsushita Electric Ind Co Ltd | Photoconductive element |
DE3032158A1 (en) * | 1979-08-30 | 1981-04-02 | Plessey Overseas Ltd., Ilford, Essex | SOLAR CELL |
JPS56125881A (en) * | 1980-03-06 | 1981-10-02 | Fuji Photo Film Co Ltd | Optical semiconductor element |
JPS5944791A (en) * | 1982-09-07 | 1984-03-13 | 株式会社日立ホームテック | High frequency heater with wireless probe |
-
1980
- 1980-12-03 JP JP55171375A patent/JPS5795677A/en active Granted
-
1986
- 1986-11-20 AU AU65542/86A patent/AU588400B2/en not_active Expired
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AU547173B2 (en) * | 1980-09-09 | 1985-10-10 | Energy Conversion Devices Inc. | Band gap of amorphous alloys and devices |
AU554181B2 (en) * | 1980-09-25 | 1986-08-14 | Canon Kabushiki Kaisha | Photoconductive device |
Also Published As
Publication number | Publication date |
---|---|
JPS5795677A (en) | 1982-06-14 |
AU6554286A (en) | 1987-02-19 |
JPS6148276B2 (en) | 1986-10-23 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MK14 | Patent ceased section 143(a) (annual fees not paid) or expired |