HK46292A - High throughput circuit tester and test technique avoiding overdriving damage - Google Patents

High throughput circuit tester and test technique avoiding overdriving damage Download PDF

Info

Publication number
HK46292A
HK46292A HK462/92A HK46292A HK46292A HK 46292 A HK46292 A HK 46292A HK 462/92 A HK462/92 A HK 462/92A HK 46292 A HK46292 A HK 46292A HK 46292 A HK46292 A HK 46292A
Authority
HK
Hong Kong
Prior art keywords
test
circuit
damage
junction
cool down
Prior art date
Application number
HK462/92A
Other languages
English (en)
French (fr)
Inventor
William A. Groves
Vance Russel Harwood
Thomas R. Fay
Elton Curtis Bingham
Michael Anthony Teska
Original Assignee
Agilent Technologies, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agilent Technologies, Inc. filed Critical Agilent Technologies, Inc.
Publication of HK46292A publication Critical patent/HK46292A/en

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/317—Testing of digital circuits
    • G01R31/3181—Functional testing
    • G01R31/319—Tester hardware, i.e. output processing circuits
    • G01R31/31903—Tester hardware, i.e. output processing circuits tester configuration
    • G01R31/31915—In-circuit Testers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer

Landscapes

  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
  • Tests Of Electronic Circuits (AREA)

Claims (5)

  1. Verfahren zum Testen von Schaltkreisen, bei dem Testsignale (96,97) an einen im Test befindlichen Schaltkreis (98) angelegt werden, der Schaltkreis einzelne Halbleiter-Komponenten aufweist und Ausgangssignale (99,96) von dem im Test befindlichen Schaltkreis überwacht werden, gekennzeichnet durch den Verfahrensschritt (92), während des Tests Abkühlintervalle minimaler Dauer einzufügen, die ausreicht, Beschädigungen des Schaltkreises durch Überhitzen der Halbleiterbestandteile des Schaltkreises zu verhindern, wobei die Dauer unter Verwendung der thermischen Eigenschaften der Verbindungen und Bonddrähte der Komponenten berechnet wird.
  2. Verfahren nach Anspruch 1, bei dem jedes Abkühlintervall in den Test vor demjenigen Teil des Testes eingefügt wird, für welchen die Länge des Abkühlintervalls bestimmt worden ist.
  3. Schaltkreistestgerät zum Testen von Schaltkreisen mit einzelnen Halbleiterkomponenten mit: Vorrichtungen (96,97) zum Anlegen eines Testsignales an Knotenpunkte des im Test befindlichen Schaltkreises (98), Vorrichtungen (99,96) zum Überwachen der Signale an den Knotenpunkten des im Test befindlichen Schaltkreises, gekennzeichnet durch eine Vorrichtung (92) zum Einfügen von Abkühlintervallen in die Schaltkreistests, Dateien (91) mit Informationen über Schaltkreis-Topologie und über thermische Verbindungs- und Bonddraht-Eigenschaften der Halbleiter-Komponenten des Schaltkreises, einen Schadenanalysator (95), der abhängig von den Informationen über Schaltkreis-Topologie und thermisches Verhalten der Übergänge und Bonddrähte in den Dateien die kürzeste Dauer von Abkühlintervallen berechnet, die ausreicht, um Überhitzungsschäden an den Halbleiterkomponenten zu verhindern, und eine Steuereinrichtung (96), die abhängig von den Signalen des Schadenanalysators die Länge jedes Abkühlintervalles steuert.
  4. Schaltkreistestgerät nach Anspruch 3, bei dem die Einfügevorrichtung jedes Abkühlintervall in den Test vor dem Teil des Testes, für welchen seine Länge bestimmt worden ist, einfügt.
  5. Schaltkreistestgerät nach Anspruch 3 oder 4, bei dem der Verlauf der Testsignale veränderlich ist.
HK462/92A 1983-06-13 1992-06-25 High throughput circuit tester and test technique avoiding overdriving damage HK46292A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/503,465 US4588945A (en) 1983-06-13 1983-06-13 High throughput circuit tester and test technique avoiding overdriving damage

Publications (1)

Publication Number Publication Date
HK46292A true HK46292A (en) 1992-07-03

Family

ID=24002208

Family Applications (1)

Application Number Title Priority Date Filing Date
HK462/92A HK46292A (en) 1983-06-13 1992-06-25 High throughput circuit tester and test technique avoiding overdriving damage

Country Status (6)

Country Link
US (1) US4588945A (de)
EP (1) EP0128774B1 (de)
JP (2) JPS6013267A (de)
DE (1) DE3485280D1 (de)
HK (1) HK46292A (de)
SG (1) SG34092G (de)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3543699A1 (de) * 1985-12-11 1987-06-19 Rohde & Schwarz Verfahren zum pruefen der einzelnen bauelemente einer leiterplatte (in-circuit-test)
GB2186701B (en) * 1986-02-14 1990-03-28 Membrain Ltd Circuit testers
SE461939B (sv) * 1988-09-12 1990-04-09 Kjell Moum Instrument foer kontroll av ic-kretsar
US4947113A (en) * 1989-03-31 1990-08-07 Hewlett-Packard Company Driver circuit for providing pulses having clean edges
US4998026A (en) * 1989-04-19 1991-03-05 Hewlett-Packard Company Driver circuit for in-circuit overdrive/functional tester
US5027064A (en) * 1989-04-19 1991-06-25 Celeritek, Inc. Method and means for measuring operating temperature of semiconductor devices by monitoring RF characteristics
US5005008A (en) * 1989-04-20 1991-04-02 Hewlett Packard Company Method and apparatus for providing thermodynamic protection of a driver circuit used in an in-circuit tester
JP2584673B2 (ja) * 1989-06-09 1997-02-26 株式会社日立製作所 テストデータ変更回路を有する論理回路テスト装置
US5032789A (en) * 1989-06-19 1991-07-16 Hewlett-Packard Company Modular/concurrent board tester
US5127009A (en) * 1989-08-29 1992-06-30 Genrad, Inc. Method and apparatus for circuit board testing with controlled backdrive stress
US5111137A (en) * 1990-10-29 1992-05-05 Hewlett-Packard Company Method and apparatus for the detection of leakage current
US5321701A (en) * 1990-12-06 1994-06-14 Teradyne, Inc. Method and apparatus for a minimal memory in-circuit digital tester
US5144229A (en) * 1991-08-30 1992-09-01 Hewlett-Packard Company Method for selectively conditioning integrated circuit outputs for in-circuit test
US5184029A (en) * 1991-10-15 1993-02-02 Hewlett-Packard Company Driver circuit for circuit tester
US5448166A (en) * 1992-01-03 1995-09-05 Hewlett-Packard Company Powered testing of mixed conventional/boundary-scan logic
US5260649A (en) * 1992-01-03 1993-11-09 Hewlett-Packard Company Powered testing of mixed conventional/boundary-scan logic
US5761214A (en) * 1992-10-16 1998-06-02 International Business Machines Corporation Method for testing integrated circuit devices
US5808919A (en) * 1993-11-23 1998-09-15 Hewlett-Packard Company Diagnostic system
US5502390A (en) * 1994-03-15 1996-03-26 International Business Machines Corporation Adiabatic conductor analyzer method and system
US5682337A (en) * 1995-04-13 1997-10-28 Synopsys, Inc. High speed three-state sampling
WO1999023700A1 (en) 1997-11-05 1999-05-14 Martin Robert A Chip housing, methods of making same and methods for mounting chips therein
US6175230B1 (en) 1999-01-14 2001-01-16 Genrad, Inc. Circuit-board tester with backdrive-based burst timing
US7078924B2 (en) * 2002-09-20 2006-07-18 Lsi Logic Corporation Methodology to accurately test clock to signal valid and slew rates of PCI signals
US8227929B2 (en) 2009-09-25 2012-07-24 General Electric Company Multi-use energy storage for renewable sources
CA2879578A1 (en) * 2012-08-03 2014-02-06 Abb Technology Ag Overload limitation in peak power operation
JP6633949B2 (ja) * 2016-03-14 2020-01-22 ヤマハファインテック株式会社 基板検査装置及び基板検査方法
US10972192B2 (en) * 2018-05-11 2021-04-06 Teradyne, Inc. Handler change kit for a test system
JP7089440B2 (ja) * 2018-08-28 2022-06-22 ルネサスエレクトロニクス株式会社 半導体装置及びその自己診断の制御方法
CN109765479B (zh) * 2019-01-28 2021-10-01 合肥京东方视讯科技有限公司 一种电路板缺件检测装置和方法
KR102784150B1 (ko) * 2020-08-04 2025-03-21 주식회사 아도반테스토 양방향 전용 실시간 인터페이스를 사용하여 피시험 디바이스를 테스트하기 위한 자동 테스트 장비, 핸들러 및 방법
US12066483B2 (en) * 2022-11-11 2024-08-20 Texas Instruments Incorporated Method for testing an integrated circuit (IC) device at a testing temperature

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3870953A (en) * 1972-08-01 1975-03-11 Roger Boatman & Associates Inc In circuit electronic component tester
JPS57113377A (en) * 1981-01-07 1982-07-14 Hitachi Ltd Semiconductor testing device
US4507576A (en) * 1982-10-28 1985-03-26 Tektronix, Inc. Method and apparatus for synthesizing a drive signal for active IC testing including slew rate adjustment
JPS59221679A (ja) * 1983-05-31 1984-12-13 Advantest Corp 論理回路試験装置

Also Published As

Publication number Publication date
US4588945A (en) 1986-05-13
JPS6013267A (ja) 1985-01-23
EP0128774A3 (en) 1987-08-05
SG34092G (en) 1992-06-12
EP0128774A2 (de) 1984-12-19
JPH05188110A (ja) 1993-07-30
JP2723382B2 (ja) 1998-03-09
DE3485280D1 (de) 1992-01-02
EP0128774B1 (de) 1991-11-21

Similar Documents

Publication Publication Date Title
EP0128774B1 (de) Hochdurchsatz-Schaltkreisprüfgerät und Prüftechnik zur Vermeidung von Übersteuerungsschaden
Rajsuman Iddq testing for CMOS VLSI
US6801870B2 (en) Apparatus and method for determining effect of on-chip noise on signal propagation
US9285417B2 (en) Low-voltage IC test for defect screening
WO2002054094A1 (en) Tester with independent control of devices under test
US5489851A (en) Identification of pin-open faults by measuring current or voltage change resulting from temperature change
KR20160145107A (ko) 테스트 기기 보호 회로
EP0438705B1 (de) Verfahren zur Treibersteuerung integrierter Schaltungen während der Prüfung
US20020050813A1 (en) Burn-in test method for a semiconductor chip and burn-in test apparatus therefor
US5101152A (en) Integrated circuit transfer test device system utilizing lateral transistors
US6788095B1 (en) Method for gross input leakage functional test at wafer sort
Amerasekera et al. ESD in integrated circuits
US6433567B1 (en) CMOS integrated circuit and timing signal generator using same
US5196787A (en) Test circuit for screening parts
Singh et al. Incorporating IDDQ testing in BIST: Improved coverage through test diversity
Hamilton Thermal aspects of burn-in of high power semiconductor devices
SUTO backdriving
Peters et al. Realistic defect coverages of voltage and current tests
JPH06324105A (ja) 半導体試験装置
JPH06201765A (ja) 集積回路素子のテスト方法
Malandruccolo et al. A new built-in screening methodology to achieve zero defects in the automotive environment
CA1311564C (en) Method and circuit for testing the reliability of integrated circuit chips
Pineda Fault Localization of Temperature-Dependent Digital Circuit Functional Failures Utilizing the Scan-based Bench Testing and the Dynamic Analysis by Laser Simulation (DALS)
KR20010061382A (ko) 입력 보호회로
Malandruccolo et al. Novel solution for the built-in gate oxide stress test of LDMOS in integrated circuits for automotive applications

Legal Events

Date Code Title Description
PE Patent expired

Effective date: 20040612

PE Patent expired