HK137996A - Semiconductor hetrostructures - Google Patents

Semiconductor hetrostructures

Info

Publication number
HK137996A
HK137996A HK137996A HK137996A HK137996A HK 137996 A HK137996 A HK 137996A HK 137996 A HK137996 A HK 137996A HK 137996 A HK137996 A HK 137996A HK 137996 A HK137996 A HK 137996A
Authority
HK
Hong Kong
Prior art keywords
layers
hetrostructures
semiconductor
monolayers
silicon
Prior art date
Application number
HK137996A
Other languages
English (en)
Inventor
Michael Anthony Gell
Original Assignee
British Telecomm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GB878729953A external-priority patent/GB8729953D0/en
Priority claimed from GB888807350A external-priority patent/GB8807350D0/en
Priority claimed from GB888817884A external-priority patent/GB8817884D0/en
Priority claimed from GB888820150A external-priority patent/GB8820150D0/en
Application filed by British Telecomm filed Critical British Telecomm
Publication of HK137996A publication Critical patent/HK137996A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/15—Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
    • H01L29/151—Compositional structures
    • H01L29/152—Compositional structures with quantum effects only in vertical direction, i.e. layered structures with quantum effects solely resulting from vertical potential variation
    • H01L29/155—Comprising only semiconductor materials

Landscapes

  • Microelectronics & Electronic Packaging (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Led Devices (AREA)
  • Recrystallisation Techniques (AREA)
  • Light Receiving Elements (AREA)
  • Heterocyclic Carbon Compounds Containing A Hetero Ring Having Oxygen Or Sulfur (AREA)
  • Bipolar Transistors (AREA)
  • Thin Film Transistor (AREA)
HK137996A 1987-12-23 1996-07-25 Semiconductor hetrostructures HK137996A (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
GB878729953A GB8729953D0 (en) 1987-12-23 1987-12-23 Semiconductor heterostructures
GB888807350A GB8807350D0 (en) 1988-03-28 1988-03-28 Semiconductor heterostructures
GB888817884A GB8817884D0 (en) 1988-07-27 1988-07-27 Semiconductor heterostructures
GB888820150A GB8820150D0 (en) 1988-08-25 1988-08-25 Semiconductor heterostructures

Publications (1)

Publication Number Publication Date
HK137996A true HK137996A (en) 1996-08-02

Family

ID=27450021

Family Applications (1)

Application Number Title Priority Date Filing Date
HK137996A HK137996A (en) 1987-12-23 1996-07-25 Semiconductor hetrostructures

Country Status (9)

Country Link
US (1) US4959694A (xx)
EP (1) EP0393135B1 (xx)
JP (1) JP2740029B2 (xx)
CN (1) CN1013536B (xx)
AT (1) ATE114386T1 (xx)
CA (1) CA1301957C (xx)
DE (1) DE3852180T2 (xx)
HK (1) HK137996A (xx)
WO (1) WO1989006050A1 (xx)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5266813A (en) * 1992-01-24 1993-11-30 International Business Machines Corporation Isolation technique for silicon germanium devices
US5244749A (en) * 1992-08-03 1993-09-14 At&T Bell Laboratories Article comprising an epitaxial multilayer mirror
US6664115B2 (en) * 1992-10-23 2003-12-16 Symetrix Corporation Metal insulator structure with polarization-compatible buffer layer
US5357119A (en) * 1993-02-19 1994-10-18 Board Of Regents Of The University Of California Field effect devices having short period superlattice structures using Si and Ge
US5329257A (en) * 1993-04-30 1994-07-12 International Business Machines Corproation SiGe transferred electron device and oscillator using same
US5298457A (en) * 1993-07-01 1994-03-29 G. I. Corporation Method of making semiconductor devices using epitaxial techniques to form Si/Si-Ge interfaces and inverting the material
US5685946A (en) * 1993-08-11 1997-11-11 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Method of producing buried porous silicon-geramanium layers in monocrystalline silicon lattices
US5917195A (en) * 1995-02-17 1999-06-29 B.A. Painter, Iii Phonon resonator and method for its production
DE19714054A1 (de) * 1997-04-05 1998-10-08 Daimler Benz Ag SiGe-Photodetektor mit hohem Wirkungsgrad
US6154475A (en) * 1997-12-04 2000-11-28 The United States Of America As Represented By The Secretary Of The Air Force Silicon-based strain-symmetrized GE-SI quantum lasers
US6677655B2 (en) 2000-08-04 2004-01-13 Amberwave Systems Corporation Silicon wafer with embedded optoelectronic material for monolithic OEIC
US6734453B2 (en) 2000-08-08 2004-05-11 Translucent Photonics, Inc. Devices with optical gain in silicon
US6528827B2 (en) 2000-11-10 2003-03-04 Optolynx, Inc. MSM device and method of manufacturing same
US7008864B2 (en) * 2001-10-26 2006-03-07 Sige Semiconductor Inc. Method of depositing high-quality SiGe on SiGe substrates
US7271458B2 (en) * 2002-04-15 2007-09-18 The Board Of Trustees Of The Leland Stanford Junior University High-k dielectric for thermodynamically-stable substrate-type materials
WO2003096390A1 (en) * 2002-04-15 2003-11-20 Stanford University High-k dielectric for thermodynamically-stable substrate-type materials
ATE365382T1 (de) * 2002-11-29 2007-07-15 Max Planck Gesellschaft Halbleiterstruktur für infrarotbereich und herstellungsverfahren
US6833294B1 (en) * 2003-06-26 2004-12-21 Rj Mears, Llc Method for making semiconductor device including band-engineered superlattice
US20090166770A1 (en) * 2008-01-02 2009-07-02 International Business Machines Corporation Method of fabricating gate electrode for gate of mosfet and structure thereof
CN105429001B (zh) * 2015-10-27 2019-06-25 西安电子科技大学 Si/Ge超晶格量子级联激光器及其制备方法
CN115537916B (zh) * 2022-10-13 2024-07-16 上海理工大学 一种iv族直接带隙半导体超晶格材料及其应用

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3626257A (en) * 1969-04-01 1971-12-07 Ibm Semiconductor device with superlattice region
DE2139436A1 (de) * 1971-08-06 1973-02-22 Licentia Gmbh Halbleiterlaser
NL8301215A (nl) * 1983-04-07 1984-11-01 Philips Nv Halfgeleiderinrichting voor het opwekken van electromagnetische straling.
JPS6028268A (ja) * 1983-07-26 1985-02-13 Agency Of Ind Science & Technol 半導体装置
US4529455A (en) * 1983-10-28 1985-07-16 At&T Bell Laboratories Method for epitaxially growing Gex Si1-x layers on Si utilizing molecular beam epitaxy
US4661829A (en) * 1985-06-05 1987-04-28 American Telephone And Telegraph Company, At&T Bell Laboratories Device using ordered semiconductor alloy
CA1282671C (en) * 1985-11-18 1991-04-09 John Condon Bean Device having strain induced region
US4814837A (en) * 1986-03-13 1989-03-21 The United States Of America As Represented By The Secretary Of The Navy Quantum well electron barrier diode

Also Published As

Publication number Publication date
EP0393135B1 (en) 1994-11-23
CN1035585A (zh) 1989-09-13
ATE114386T1 (de) 1994-12-15
CA1301957C (en) 1992-05-26
JP2740029B2 (ja) 1998-04-15
CN1013536B (zh) 1991-08-14
EP0393135A1 (en) 1990-10-24
DE3852180D1 (de) 1995-01-05
JPH03503343A (ja) 1991-07-25
WO1989006050A1 (en) 1989-06-29
DE3852180T2 (de) 1995-04-06
US4959694A (en) 1990-09-25

Similar Documents

Publication Publication Date Title
HK137996A (en) Semiconductor hetrostructures
NO890768D0 (no) Anordning for transport av fluider mellom sjoebunnen og overflaten.
EP0612102A3 (en) Crystallized semiconductor layer, semiconductor device using it and their manufacturing process.
EP0673545A4 (en) METHOD AND DEVICE FOR ETCHING SEMICONDUCTOR THROWERS.
EP1037272A4 (en) SILICON ON ISOLATOR (SOI) SUBSTRATE AND SEMICONDUCTOR COMPONENT AND METHOD FOR THE PRODUCTION THEREOF
EP0317952A3 (en) Device having superlattice structure, and method of and apparatus for manufacturing the same
GB2316226B (en) Epitaxial wafer for light-emitting device,method of forming the wafer and light-emitting device using the wafer
EP0623953A3 (en) Semiconductor device without support and manufacturing method.
DE68923129D1 (de) Verpackungselement für Halbleiterbauelement und Verfahren zur Herstellung des Verpackungselementes.
EP0609867A3 (en) Manufacturing method of a crystallized semiconductor layer and manufacturing method of a semiconductor device.
TW356571B (en) Method of forming stress adjustable insulator film semiconductor device and its fabrication method
SG63578A1 (en) Thin film semiconductor device process for fabricating the same and silicon film
EP0494311A4 (en) Method of inspecting semiconductor device, apparatus for inspecting the same, and method of manufacturing the same
DE68916276D1 (de) Gerät für Dokumententransport mit Vakuumband.
EP0457571A3 (en) Strained superlattice semiconductor structure
EP0616371A3 (en) Semiconductor device in silicon on insulator and method for its manufacture.
EP0637060A3 (en) Process for the production of isolated intra-polycrystalline silicon structures.
DE59300120D1 (de) Verfahren zum kontaminationsfreien Zerkleinern von Halbleitermaterial, insbesondere Silicium.
EP0626731A3 (en) Improved method for producing a semiconductor heterostructure with a gallium arsenide layer lying on germanium.
EP0632499A3 (en) Semiconductor device substrate.
AU8005691A (en) Device for turning small objects, in particular parcels, on a conveyor belt
DE58901116D1 (de) Siliciumnitridpulver mit verbesserten oberflaecheneigenschaften sowie verfahren zu deren herstellung.
ITGE950064A0 (it) Metodo e dispositivo per la fabbricazione di contenitori d'imballaggio da fogli d'imballaggio, in particolare per sigarette, o simili.
CA2193870A1 (en) Treponema Pallidum Fused Antigen and Assay for Anti-Treponema Pallidum Antibodies Using the Same Fused Antigen
IL109445A0 (en) Atherosclerotic plaque specific antigens, antibodies thereto, and uses thereof

Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)