HK1220283A1 - 固態存儲設備中的讀數電壓計算 - Google Patents
固態存儲設備中的讀數電壓計算Info
- Publication number
- HK1220283A1 HK1220283A1 HK16108142.2A HK16108142A HK1220283A1 HK 1220283 A1 HK1220283 A1 HK 1220283A1 HK 16108142 A HK16108142 A HK 16108142A HK 1220283 A1 HK1220283 A1 HK 1220283A1
- Authority
- HK
- Hong Kong
- Prior art keywords
- solid
- storage devices
- state storage
- voltage calculation
- reading voltage
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
- G11C11/5642—Sensing or reading circuits; Data output circuits
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F11/00—Error detection; Error correction; Monitoring
- G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
- G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
- G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
- G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
- G06F11/1072—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices in multilevel memories
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F12/00—Accessing, addressing or allocating within memory systems or architectures
- G06F12/02—Addressing or allocation; Relocation
- G06F12/0223—User address space allocation, e.g. contiguous or non contiguous base addressing
- G06F12/023—Free address space management
- G06F12/0238—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
- G06F12/0246—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory in block erasable memory, e.g. flash memory
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/349—Arrangements for evaluating degradation, retention or wearout, e.g. by counting erase cycles
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
- G11C29/021—Detection or location of defective auxiliary circuits, e.g. defective refresh counters in voltage or current generators
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
- G11C29/028—Detection or location of defective auxiliary circuits, e.g. defective refresh counters with adaption or trimming of parameters
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/38—Response verification devices
- G11C29/42—Response verification devices using error correcting codes [ECC] or parity check
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/14—Dummy cell management; Sense reference voltage generators
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201361829955P | 2013-05-31 | 2013-05-31 | |
| US13/917,518 US20140359202A1 (en) | 2013-05-31 | 2013-06-13 | Reading voltage calculation in solid-state storage devices |
| PCT/US2014/040092 WO2014194141A1 (en) | 2013-05-31 | 2014-05-29 | Reading voltage calculation in solid-state storage devices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| HK1220283A1 true HK1220283A1 (zh) | 2017-04-28 |
Family
ID=51986492
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| HK16108142.2A HK1220283A1 (zh) | 2013-05-31 | 2016-07-12 | 固態存儲設備中的讀數電壓計算 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20140359202A1 (zh) |
| KR (1) | KR102315294B1 (zh) |
| CN (1) | CN105324819A (zh) |
| DE (1) | DE112014002632T5 (zh) |
| GB (1) | GB2529584B (zh) |
| HK (1) | HK1220283A1 (zh) |
| WO (1) | WO2014194141A1 (zh) |
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| KR102252378B1 (ko) * | 2014-10-29 | 2021-05-14 | 삼성전자주식회사 | 메모리 장치, 메모리 시스템, 상기 메모리 장치의 동작 방법 및 상기 메모리 시스템의 동작 방법 |
| KR102287760B1 (ko) | 2014-10-29 | 2021-08-09 | 삼성전자주식회사 | 메모리 시스템 및 상기 메모리 시스템의 동작 방법 |
| KR102263046B1 (ko) | 2014-10-29 | 2021-06-09 | 삼성전자주식회사 | 메모리 장치, 메모리 시스템, 상기 메모리 장치의 동작 방법 및 상기 메모리 시스템의 동작 방법 |
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| US10339048B2 (en) * | 2014-12-23 | 2019-07-02 | International Business Machines Corporation | Endurance enhancement scheme using memory re-evaluation |
| GB2537484B (en) * | 2015-03-20 | 2019-07-03 | HGST Netherlands BV | Read level grouping for increased flash performance |
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| KR20140045168A (ko) * | 2012-10-08 | 2014-04-16 | 삼성전자주식회사 | 불휘발성 메모리 장치, 메모리 시스템 및 불휘발성 메모리 장치의 동작방법 |
| CN103811077B (zh) * | 2012-11-12 | 2017-03-29 | 光宝电子(广州)有限公司 | 闪存中的资料补偿方法 |
| US9135109B2 (en) * | 2013-03-11 | 2015-09-15 | Seagate Technology Llc | Determination of optimum threshold voltage to read data values in memory cells |
| US9021331B2 (en) * | 2013-03-14 | 2015-04-28 | Seagate Technology Llc | Method and apparatus for generation of soft decision error correction code information |
-
2013
- 2013-06-13 US US13/917,518 patent/US20140359202A1/en not_active Abandoned
-
2014
- 2014-05-29 GB GB1520353.2A patent/GB2529584B/en active Active
- 2014-05-29 DE DE112014002632.8T patent/DE112014002632T5/de not_active Withdrawn
- 2014-05-29 KR KR1020157036833A patent/KR102315294B1/ko active IP Right Grant
- 2014-05-29 CN CN201480031023.7A patent/CN105324819A/zh active Pending
- 2014-05-29 WO PCT/US2014/040092 patent/WO2014194141A1/en active Application Filing
-
2016
- 2016-07-12 HK HK16108142.2A patent/HK1220283A1/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| DE112014002632T5 (de) | 2016-02-18 |
| US20140359202A1 (en) | 2014-12-04 |
| GB2529584B (en) | 2020-07-15 |
| GB201520353D0 (en) | 2015-12-30 |
| WO2014194141A1 (en) | 2014-12-04 |
| CN105324819A (zh) | 2016-02-10 |
| GB2529584A (en) | 2016-02-24 |
| KR20160014030A (ko) | 2016-02-05 |
| KR102315294B1 (ko) | 2021-10-19 |
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