HK1212509A1 - 波長轉換的發光設備 - Google Patents

波長轉換的發光設備

Info

Publication number
HK1212509A1
HK1212509A1 HK16100257.0A HK16100257A HK1212509A1 HK 1212509 A1 HK1212509 A1 HK 1212509A1 HK 16100257 A HK16100257 A HK 16100257A HK 1212509 A1 HK1212509 A1 HK 1212509A1
Authority
HK
Hong Kong
Prior art keywords
light emitting
emitting device
converted light
wavelength converted
wavelength
Prior art date
Application number
HK16100257.0A
Other languages
English (en)
Inventor
April Dawn Schricker
Kim Kevin Mai
Grigoriy Basin
Original Assignee
Koninkl Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninkl Philips Nv filed Critical Koninkl Philips Nv
Publication of HK1212509A1 publication Critical patent/HK1212509A1/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Device Packages (AREA)
HK16100257.0A 2012-11-07 2016-01-12 波長轉換的發光設備 HK1212509A1 (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201261723341P 2012-11-07 2012-11-07
PCT/IB2013/059647 WO2014072865A1 (en) 2012-11-07 2013-10-25 Wavelength converted light emitting device

Publications (1)

Publication Number Publication Date
HK1212509A1 true HK1212509A1 (zh) 2016-06-10

Family

ID=49955413

Family Applications (1)

Application Number Title Priority Date Filing Date
HK16100257.0A HK1212509A1 (zh) 2012-11-07 2016-01-12 波長轉換的發光設備

Country Status (8)

Country Link
US (1) US9324926B2 (zh)
EP (1) EP2917938B1 (zh)
JP (1) JP6419077B2 (zh)
KR (1) KR102137682B1 (zh)
CN (1) CN104781931A (zh)
HK (1) HK1212509A1 (zh)
TW (1) TWI637537B (zh)
WO (1) WO2014072865A1 (zh)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113658943A (zh) * 2013-12-13 2021-11-16 晶元光电股份有限公司 发光装置及其制作方法
KR102237112B1 (ko) * 2014-07-30 2021-04-08 엘지이노텍 주식회사 발광 소자 및 이를 구비한 광원 모듈
JP6940784B2 (ja) * 2014-09-26 2021-09-29 日亜化学工業株式会社 発光装置の製造方法
JP6582382B2 (ja) 2014-09-26 2019-10-02 日亜化学工業株式会社 発光装置の製造方法
JP6552190B2 (ja) * 2014-12-11 2019-07-31 シチズン電子株式会社 発光装置及び発光装置の製造方法
DE102015105474A1 (de) * 2015-04-10 2016-10-13 Osram Opto Semiconductors Gmbh Konverterbauteil für eine optoelektronische Leuchtvorrichtung
JP6217705B2 (ja) * 2015-07-28 2017-10-25 日亜化学工業株式会社 発光装置及びその製造方法
KR102634692B1 (ko) 2016-02-12 2024-02-08 삼성전자주식회사 반도체 발광 소자 패키지
US10854794B2 (en) 2017-12-20 2020-12-01 Lumileds Llc Monolithic LED array structure
US11283240B2 (en) * 2018-01-09 2022-03-22 Oepic Semiconductors, Inc. Pillar confined backside emitting VCSEL
US11233377B2 (en) * 2018-01-26 2022-01-25 Oepic Semiconductors Inc. Planarization of backside emitting VCSEL and method of manufacturing the same for array application
US10910433B2 (en) * 2018-12-31 2021-02-02 Lumileds Llc Pixelated LED array with optical elements
EP4138148A1 (en) 2019-06-06 2023-02-22 Nuvoton Technology Corporation Japan Semiconductor light-emitting element and semiconductor light-emitting device
CN116344686A (zh) * 2023-05-31 2023-06-27 季华实验室 全彩化显示面板的制备方法、显示面板以及显示装置
CN117497525A (zh) * 2023-12-28 2024-02-02 江西晶亮光电科技协同创新有限公司 多晶发光装置及其制备方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7256483B2 (en) 2004-10-28 2007-08-14 Philips Lumileds Lighting Company, Llc Package-integrated thin film LED
KR100638868B1 (ko) * 2005-06-20 2006-10-27 삼성전기주식회사 금속 반사 층을 형성한 엘이디 패키지 및 그 제조 방법
JP4441883B2 (ja) * 2005-12-06 2010-03-31 ソニー株式会社 表示装置
US8552444B2 (en) * 2007-11-19 2013-10-08 Panasonic Corporation Semiconductor light-emitting device and manufacturing method of the same
JP5779097B2 (ja) * 2008-09-25 2015-09-16 コーニンクレッカ フィリップス エヌ ヴェ コーティングされた発光デバイス及び発光デバイスをコーティングする方法
CN102356480B (zh) * 2009-03-19 2015-06-17 皇家飞利浦电子股份有限公司 颜色调节装置
US20110031516A1 (en) 2009-08-07 2011-02-10 Koninklijke Philips Electronics N.V. Led with silicone layer and laminated remote phosphor layer
US20110049545A1 (en) * 2009-09-02 2011-03-03 Koninklijke Philips Electronics N.V. Led package with phosphor plate and reflective substrate
KR20110115506A (ko) * 2010-04-15 2011-10-21 삼성엘이디 주식회사 발광다이오드 패키지, 이를 포함한 조명 장치 및 발광다이오드 패키지 제조방법
DE102010028407B4 (de) * 2010-04-30 2021-01-14 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Bauelement und Verfahren zum Herstellen eines optoelektronischen Bauelements
JP5622494B2 (ja) * 2010-09-09 2014-11-12 スタンレー電気株式会社 発光装置およびその製造方法
JP5647028B2 (ja) * 2011-02-14 2014-12-24 スタンレー電気株式会社 発光装置およびその製造方法
JP2013016588A (ja) * 2011-07-01 2013-01-24 Citizen Electronics Co Ltd Ｌｅｄ発光装置

Also Published As

Publication number Publication date
WO2014072865A1 (en) 2014-05-15
TWI637537B (zh) 2018-10-01
US9324926B2 (en) 2016-04-26
US20150280083A1 (en) 2015-10-01
EP2917938A1 (en) 2015-09-16
EP2917938B1 (en) 2020-05-06
CN104781931A (zh) 2015-07-15
JP2015533456A (ja) 2015-11-24
TW201427105A (zh) 2014-07-01
JP6419077B2 (ja) 2018-11-07
KR102137682B1 (ko) 2020-07-27
KR20150082547A (ko) 2015-07-15

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