HK1201100A1 - Planarized semiconductor particles positioned on a substrate - Google Patents
Planarized semiconductor particles positioned on a substrateInfo
- Publication number
- HK1201100A1 HK1201100A1 HK14111792.1A HK14111792A HK1201100A1 HK 1201100 A1 HK1201100 A1 HK 1201100A1 HK 14111792 A HK14111792 A HK 14111792A HK 1201100 A1 HK1201100 A1 HK 1201100A1
- Authority
- HK
- Hong Kong
- Prior art keywords
- substrate
- semiconductor particles
- particles positioned
- planarized semiconductor
- planarized
- Prior art date
Links
- 239000002245 particle Substances 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
- B81C1/00031—Regular or irregular arrays of nanoscale structures, e.g. etch mask layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02428—Structure
- H01L21/0243—Surface structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Nanotechnology (AREA)
- Analytical Chemistry (AREA)
- Thin Film Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Recrystallisation Techniques (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201161547110P | 2011-10-14 | 2011-10-14 | |
PCT/CA2012/000956 WO2013053052A1 (fr) | 2011-10-14 | 2012-10-12 | Particules semi-conductrices planarisées disposées sur un substrat |
Publications (1)
Publication Number | Publication Date |
---|---|
HK1201100A1 true HK1201100A1 (en) | 2015-08-21 |
Family
ID=48081306
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
HK14111792.1A HK1201100A1 (en) | 2011-10-14 | 2014-11-21 | Planarized semiconductor particles positioned on a substrate |
Country Status (6)
Country | Link |
---|---|
US (1) | US9224851B2 (fr) |
EP (1) | EP2766926A4 (fr) |
JP (1) | JP6084226B2 (fr) |
CN (1) | CN103858221B (fr) |
HK (1) | HK1201100A1 (fr) |
WO (1) | WO2013053052A1 (fr) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9859348B2 (en) | 2011-10-14 | 2018-01-02 | Diftek Lasers, Inc. | Electronic device and method of making thereof |
US9601329B2 (en) * | 2014-06-04 | 2017-03-21 | Diftek Lasers, Inc. | Method of fabricating crystalline island on substrate |
US9209019B2 (en) * | 2013-09-05 | 2015-12-08 | Diftek Lasers, Inc. | Method and system for manufacturing a semi-conducting backplane |
US9455307B2 (en) | 2011-10-14 | 2016-09-27 | Diftek Lasers, Inc. | Active matrix electro-optical device and method of making thereof |
US9396932B2 (en) | 2014-06-04 | 2016-07-19 | Diftek Lasers, Inc. | Method of fabricating crystalline island on substrate |
JP6084226B2 (ja) | 2011-10-14 | 2017-02-22 | ディフテック レーザーズ インコーポレイテッド | 基板上に位置付けられる平坦化された半導体粒子 |
US10446629B2 (en) | 2011-10-14 | 2019-10-15 | Diftek Lasers, Inc. | Electronic device and method of making thereof |
US8896082B1 (en) * | 2012-03-23 | 2014-11-25 | Actlight, S.A. | Solar cell systems and integration with CMOS circuitry |
JP6231641B2 (ja) * | 2015-10-09 | 2017-11-15 | ディフテック レーザーズ インコーポレイテッド | 電子デバイスおよびそれを作製する方法 |
EP3244453A1 (fr) * | 2015-10-09 | 2017-11-15 | Diftek Lasers, Inc. | Dispositif électronique et son procédé de fabrication |
US10312310B2 (en) | 2016-01-19 | 2019-06-04 | Diftek Lasers, Inc. | OLED display and method of fabrication thereof |
JP6857517B2 (ja) * | 2016-06-16 | 2021-04-14 | ディフテック レーザーズ インコーポレイテッド | 基板上に結晶アイランドを製造する方法 |
WO2019175471A1 (fr) * | 2018-03-14 | 2019-09-19 | Emberion Oy | Mesfet de surface |
Family Cites Families (37)
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US3025335A (en) | 1960-02-29 | 1962-03-13 | Hoffman Electronics Corp | Flexible solar energy converter panel |
NL154876B (nl) | 1966-04-14 | 1977-10-17 | Philips Nv | Werkwijze voor het vervaardigen van elektrisch werkzame inrichtingen met monokorrellagen met actieve korrels in een isolerende vulstof, alsmede volgens deze werkwijze verkregen elektrisch werkzame inrichting. |
US3998659A (en) | 1974-01-28 | 1976-12-21 | Texas Instruments Incorporated | Solar cell with semiconductor particles and method of fabrication |
US4270263A (en) | 1977-02-14 | 1981-06-02 | Texas Instruments Incorporated | Glass support light energy converter |
US4470874A (en) | 1983-12-15 | 1984-09-11 | International Business Machines Corporation | Planarization of multi-level interconnected metallization system |
US4614835A (en) | 1983-12-15 | 1986-09-30 | Texas Instruments Incorporated | Photovoltaic solar arrays using silicon microparticles |
US5069740A (en) | 1984-09-04 | 1991-12-03 | Texas Instruments Incorporated | Production of semiconductor grade silicon spheres from metallurgical grade silicon particles |
JPS61171165A (ja) * | 1985-01-25 | 1986-08-01 | Nissan Motor Co Ltd | Mosトランジスタ |
US4637855A (en) | 1985-04-30 | 1987-01-20 | Texas Instruments Incorporated | Process for producing crystalline silicon spheres |
US4872607A (en) | 1988-02-04 | 1989-10-10 | Texas Instruments Incorporated | Method of bonding semiconductor material to an aluminum foil |
JPH01276750A (ja) * | 1988-04-28 | 1989-11-07 | Matsushita Electric Ind Co Ltd | 半導体装置 |
US5091319A (en) | 1989-07-31 | 1992-02-25 | Hotchkiss Gregory B | Method of affixing silicon spheres to a foil matrix |
US5256562A (en) | 1990-12-31 | 1993-10-26 | Kopin Corporation | Method for manufacturing a semiconductor device using a circuit transfer film |
US5469020A (en) | 1994-03-14 | 1995-11-21 | Massachusetts Institute Of Technology | Flexible large screen display having multiple light emitting elements sandwiched between crossed electrodes |
AU715515B2 (en) * | 1996-10-09 | 2000-02-03 | Sphelar Power Corporation | Semiconductor device |
US5955776A (en) | 1996-12-04 | 1999-09-21 | Ball Semiconductor, Inc. | Spherical shaped semiconductor integrated circuit |
US6657225B1 (en) | 1998-03-25 | 2003-12-02 | Seiko Epson Corporation | Semiconductor component, active matrix substrate for a liquid crystal display, and methods of manufacturing such component and substrate |
US6350388B1 (en) | 1999-08-19 | 2002-02-26 | Micron Technology, Inc. | Method for patterning high density field emitter tips |
JP2001210843A (ja) | 1999-11-17 | 2001-08-03 | Fuji Mach Mfg Co Ltd | 光発電パネルおよびその製造方法 |
JP2001230432A (ja) * | 2000-02-16 | 2001-08-24 | Mitsui High Tec Inc | 半導体装置およびその製造方法 |
TW505942B (en) * | 2000-06-29 | 2002-10-11 | Matsushita Electric Ind Co Ltd | Method and apparatus for forming pattern onto panel substrate |
JP2002083876A (ja) * | 2000-09-07 | 2002-03-22 | Sanyo Electric Co Ltd | 半導体集積回路装置の製造方法 |
CA2671924C (fr) * | 2000-10-20 | 2013-06-11 | Josuke Nakata | Module a semi-conducteur emetteur ou recepteur de lumiere et procede de fabrication dudit module |
CA2393219C (fr) * | 2000-10-20 | 2007-01-09 | Josuke Nakata | Dispositif a semi-conducteur emetteur ou recepteur de lumiere et procede de fabrication dudit dispositif |
JP3940047B2 (ja) * | 2002-07-23 | 2007-07-04 | 京セラ株式会社 | 光電変換装置の製造方法 |
US20040016456A1 (en) | 2002-07-25 | 2004-01-29 | Clean Venture 21 Corporation | Photovoltaic device and method for producing the same |
KR100499129B1 (ko) * | 2002-09-02 | 2005-07-04 | 삼성전기주식회사 | 발광 다이오드 및 그 제조방법 |
EP1668702A1 (fr) * | 2003-09-05 | 2006-06-14 | Adrian H. Kitai | Dispositifs electroluminescents contenant du phosphore, a film mince, supporte par des billes |
TW200637037A (en) | 2005-02-18 | 2006-10-16 | Sumitomo Chemical Co | Semiconductor light-emitting element and fabrication method thereof |
US20080121987A1 (en) * | 2006-11-06 | 2008-05-29 | Yijian Chen | Nanodot and nanowire based MOSFET structures and fabrication processes |
DE102006054206A1 (de) * | 2006-11-15 | 2008-05-21 | Till Keesmann | Feldemissionsvorrichtung |
KR100907787B1 (ko) | 2007-05-29 | 2009-07-15 | 재단법인서울대학교산학협력재단 | 패턴-천공된 마스크를 이용하는 하전입자의 집속 패터닝방법 및 이에 사용되는 마스크 |
JP5157843B2 (ja) * | 2007-12-04 | 2013-03-06 | 住友電気工業株式会社 | 炭化ケイ素半導体装置およびその製造方法 |
KR101039630B1 (ko) * | 2009-02-18 | 2011-06-08 | 성균관대학교산학협력단 | 기판 상에 나노구조체를 선택적으로 위치시키는 방법 및 이에 의해 형성된 나노구조체를 포함하는 나노-분자 소자 |
JP2011181534A (ja) | 2010-02-26 | 2011-09-15 | Hitachi Ltd | 球状化合物半導体セル及びモジュールの製造方法 |
JP6084226B2 (ja) | 2011-10-14 | 2017-02-22 | ディフテック レーザーズ インコーポレイテッド | 基板上に位置付けられる平坦化された半導体粒子 |
US8999742B1 (en) | 2013-12-10 | 2015-04-07 | Nthdegree Technologies Worldwide Inc. | Silicon microsphere fabrication |
-
2012
- 2012-10-12 JP JP2014534897A patent/JP6084226B2/ja active Active
- 2012-10-12 EP EP12839944.1A patent/EP2766926A4/fr not_active Withdrawn
- 2012-10-12 CN CN201280050565.XA patent/CN103858221B/zh active Active
- 2012-10-12 US US13/992,063 patent/US9224851B2/en active Active
- 2012-10-12 WO PCT/CA2012/000956 patent/WO2013053052A1/fr active Application Filing
-
2014
- 2014-11-21 HK HK14111792.1A patent/HK1201100A1/xx unknown
Also Published As
Publication number | Publication date |
---|---|
US9224851B2 (en) | 2015-12-29 |
EP2766926A1 (fr) | 2014-08-20 |
CN103858221B (zh) | 2017-02-15 |
JP2014535166A (ja) | 2014-12-25 |
WO2013053052A1 (fr) | 2013-04-18 |
US20140070223A1 (en) | 2014-03-13 |
EP2766926A4 (fr) | 2015-10-14 |
CN103858221A (zh) | 2014-06-11 |
JP6084226B2 (ja) | 2017-02-22 |
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