HK1196996A1 - 碳納米管透明複合電極的製備方法 - Google Patents

碳納米管透明複合電極的製備方法

Info

Publication number
HK1196996A1
HK1196996A1 HK14110367.8A HK14110367A HK1196996A1 HK 1196996 A1 HK1196996 A1 HK 1196996A1 HK 14110367 A HK14110367 A HK 14110367A HK 1196996 A1 HK1196996 A1 HK 1196996A1
Authority
HK
Hong Kong
Prior art keywords
preparation
carbon nanotube
composite electrode
transparent composite
nanotube transparent
Prior art date
Application number
HK14110367.8A
Other languages
English (en)
Chinese (zh)
Inventor
郝海燕戴雷蔡麗菲
Original Assignee
北京阿格蕾雅科技發展有限公司 室
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 北京阿格蕾雅科技發展有限公司 室 filed Critical 北京阿格蕾雅科技發展有限公司 室
Publication of HK1196996A1 publication Critical patent/HK1196996A1/zh

Links

Classifications

    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Human Computer Interaction (AREA)
  • Manufacturing & Machinery (AREA)
  • Manufacturing Of Electric Cables (AREA)
  • Non-Insulated Conductors (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Electroluminescent Light Sources (AREA)
HK14110367.8A 2013-01-14 2014-10-16 碳納米管透明複合電極的製備方法 HK1196996A1 (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201310012106.9A CN103928637B (zh) 2013-01-14 2013-01-14 碳纳米管透明复合电极的制备方法

Publications (1)

Publication Number Publication Date
HK1196996A1 true HK1196996A1 (zh) 2014-12-24

Family

ID=51146785

Family Applications (1)

Application Number Title Priority Date Filing Date
HK14110367.8A HK1196996A1 (zh) 2013-01-14 2014-10-16 碳納米管透明複合電極的製備方法

Country Status (7)

Country Link
JP (1) JP5965554B2 (de)
KR (1) KR101693774B1 (de)
CN (1) CN103928637B (de)
DE (1) DE112013006416T5 (de)
HK (1) HK1196996A1 (de)
TW (1) TWI553662B (de)
WO (1) WO2014108015A1 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105321592B (zh) * 2014-08-01 2017-03-22 广东阿格蕾雅光电材料有限公司 碳纳米管‑高分子层状复合透明柔性电极及其制备方法
CN105361977B (zh) * 2014-08-26 2018-08-10 中国科学院苏州纳米技术与纳米仿生研究所 电阻式柔性透明关节部位电子皮肤及其制备方法和应用
CN104465993A (zh) * 2014-10-28 2015-03-25 南昌大学 一种碳基复合透明电极及制备方法
CN104576321A (zh) * 2015-01-30 2015-04-29 京东方科技集团股份有限公司 一种电极结构、其制作方法、显示基板及显示装置
CN104616838B (zh) 2015-02-10 2018-02-06 京东方科技集团股份有限公司 一种电子器件的制作方法及电子器件
KR102487673B1 (ko) * 2015-02-23 2023-01-11 린텍 오브 아메리카, 인크. 점착 시트
CN105024015B (zh) * 2015-06-24 2017-12-22 复旦大学 一种可拼接的钙钛矿太阳能电池及其制备方法
CN106601329B (zh) * 2016-08-18 2019-04-16 北京纳米能源与系统研究所 一种柔性纳米摩擦发电机、制备方法及制成的传感器
CN106782774A (zh) * 2017-01-10 2017-05-31 京东方科技集团股份有限公司 透明导电薄膜、其制备方法及装置
CN109427982B (zh) * 2017-08-30 2020-01-03 清华大学 有机发光二极管
CN109428006B (zh) 2017-08-30 2020-01-07 清华大学 有机发光二极管
CN109428009B (zh) 2017-08-30 2020-05-15 清华大学 有机发光二极管的制备方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100992154B1 (ko) * 2008-09-19 2010-11-05 한국전자통신연구원 탄소나노튜브를 이용한 투명 전도성 박막 및 그 제조 방법
CN102086035B (zh) * 2009-12-03 2013-06-19 北京富纳特创新科技有限公司 碳纳米管膜及其制备方法
JP5554552B2 (ja) * 2009-12-09 2014-07-23 アルプス電気株式会社 透明導電膜及びその製造方法
CN101923912B (zh) * 2010-06-18 2013-12-11 北京富纳特创新科技有限公司 碳纳米管膜及基于该碳纳米管膜的复合膜
KR101272483B1 (ko) * 2010-12-09 2013-06-10 한국과학기술원 탄소나노튜브와 전도성 고분자를 이용한 다층 구조의 투명 전도성 판재의 제조방법
CN102321323B (zh) * 2011-05-27 2013-08-28 清华大学 透明碳纳米管复合膜的制备方法
JP2015067483A (ja) * 2013-09-30 2015-04-13 日立造船株式会社 繊維状カーボン材料の製造方法

Also Published As

Publication number Publication date
TW201432718A (zh) 2014-08-16
WO2014108015A1 (zh) 2014-07-17
KR101693774B1 (ko) 2017-01-06
CN103928637B (zh) 2016-05-04
CN103928637A (zh) 2014-07-16
JP5965554B2 (ja) 2016-08-10
JP2016504738A (ja) 2016-02-12
TWI553662B (zh) 2016-10-11
DE112013006416T5 (de) 2015-10-15
KR20150118583A (ko) 2015-10-22

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Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20210110